IRLML0100 PDF规格书
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IRLML0100
■ Features ●VDS (V) = 100V ●ID = 1.6A (VGS = 10V) ●RDS(ON) ＜ 220mΩ (VGS = 10V) ●RDS(ON) ＜ 235mΩ (VGS = 4.5V)
■ Absolute Maximum Ratings Ta = 25℃SymbolRatingUnitVDS100VGS±16 TA=25℃1.6 TA=70℃1.3IDM7 TA=25℃1.3 TA=70℃0.8100990.01W/℃TJ150Tstg-55 to 150 Linear Derating FactorV
A Pulsed Drain Current Parameter
Continuous Drain Current @ VGS=10VID Drain-Source Voltage Gate-Source Voltage
Junction Temperature Storage Temperature RangePDW Power Dissipation ℃/W
℃ Thermal Resistance.Junction- to-Ambient (Note.1)RthJA
Note.1: Surface mounted on 1 in square Cu boardSG31
2D0.4+0.1-0.12.9+0.1-0.1
0.95+0.1-0.11.9+0.1-0.12.4+0.1-0.11.3+0.1-0.1
0-0.10.38+0.1-0.10.97+0.1-0.10.550.4
123Unit:mmSOT-23
0.1+0.05-0.01
1. Gate2. Source3. DrainN-Channel MOSFET
■ Electrical Characteristics Ta = 25℃ParameterSymbolTest ConditionsMinTypMaxUnit Drain-Source Breakdown VoltageVDSS ID=250μA, VGS=0V100V VDS=100V, V
GS=0V20 VDS=100V, VGS=0V, TJ=125℃250 Gate-Body Leakage CurrentI
GSS
VDS=0V, VGS=±16V±100nA Gate Threshold VoltageVGS(th) VDS=VGS , ID=250μA12.5V VGS=4.5V, ID=1.3A190235 VGS=10V, ID=1.6A178220 Forward TransconductancegFS VDS=50V, ID=1.6A5.7S Input CapacitanceCiss290 Output CapacitanceCoss27 Reverse Transfer CapacitanceCrss13 Gate ResistanceRg1.3Ω Total Gate ChargeQg2.5 Gate Source ChargeQgs0.5 Gate Drain ChargeQgd1.2 Turn-On DelayTimetd(on)2.2 Turn-On Rise Timetr2.1 Turn-Off DelayTimetd(off)9 Turn-Off Fall Timetf3.6 Body Diode Reverse Recovery Timetrr2030 Body Diode Reverse Recovery ChargeQrr1320nC Maximum Body-Diode Continuous CurrentIS1.1 Pulsed Source CurrentISM (Note.2)7 Diode Forward VoltageVSD IS=1.1A,VGS=0V,TJ = 25℃ (Note.1)1.3VAns Zero Gate Voltage Drain CurrentIDSSμA
mΩ
VGS=4.5V, VDS=50V, ID=1A,RGEN=6.8ΩRDS(On) Static Drain-Source On-Resistance (Note.1)
VR=50V,IF= 1.1A, dI/dt= 100A/μs ,TJ = 25℃ (Note.1) VGS=0V, VDS=25V, f=1MHz
VGS=4.5V, VDS=50V, ID=1.6ApF
nC
Note.1: Pulse width ≤ 400μs; duty cycle ≤ 2%.Note.2:Repetitive rating; pulse width limited by max. junction temperature.
■ MarkingMarking1K**IRLML0100 N-Channel MOSFET■ Typical Characterisitics
Fig 3. Typical Transfer CharacteristicsFig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 4. Normalized On-ResistanceVs. Temperature1.52.02.53.03.5VGS, Gate-to-Source Voltage (V)0.010.1110
ID,Drain-to-SourceCurrent(A)
TJ= 25°CTJ
= 150°C
VDS= 50V≤
60µs PULSE WIDTH-60-40-20020406080100120140160TJ, Junction Temperature (°C)0.51.01.52.02.5
RDS(on),Drain-to-SourceOnResistance
(Normalized)ID= 1.6AVGS = 10V0.1110100VDS, Drain-to-Source Voltage (V)0.010.1110100
ID,Drain-to-SourceCurrent(A)VGSTOP 10.0V4.50V3.50V3.30V3.25V2.50V2.35VBOTTOM2.25V≤60µs PULSE WIDTH Tj = 25°C
2.25V0.1110100VDS, Drain-to-Source Voltage (V)0.1110100
ID,Drain-to-SourceCurrent(A)≤60µs PULSE WIDTH Tj = 150°C
2.25VVGSTOP 10.0V4.50V3.50V3.30V3.25V2.50V2.35VBOTTOM2.25V
Fig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage110100VDS, Drain-to-Source Voltage (V)110100100010000
C,Capacitance(pF)VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = CgdCoss = Cds + Cgd
CossCrssCiss
01234567 QGTotal Gate Charge (nC)0481216
VGS,Gate-to-SourceVoltage(V)VDS= 80VVDS= 50VVDS= 20VID= 1.6AIRLML0100 N-Channel MOSFET
.
■ Typical Characterisitics
Fig 8.
Maximum Safe Operating AreaFig 7. Typical Source-Drain DiodeForward Voltage0.40.60.8
1.0
VSD, Source-to-Drain Voltage (V)0.010.1110100
ISD,ReverseDrainCurrent(A)
TJ= 25°CTJ= 150°C
VGS = 0V0.1110100VDS, Drain-to-Source Voltage (V)0.010.1110100
ID,Drain-to-SourceCurrent(A)
TA= 25°CTj = 150°CSingle Pulse1msec
10msecOPERATION IN THIS AREA LIMITED BY RDS(on)
100µsec
Fig 9.Maximum Drain Current Vs. Ambient Temperature255075100125150TA, Ambient Temperature (°C)0.00.51.01.52.0
ID,DrainCurrent(A)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient1E-0061E-0050.00010.0010.010.1110t1, Rectangular Pulse Duration (sec)0.010.11101001000
ThermalResponse(ZthJA)0.200.10D = 0.50
0.020.010.05
SINGLE PULSE( THERMAL RESPONSE )Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + TcVDS90%
10%VGStd(on)trtd(off)tfFig 10b. Switching Time WaveformsFig 10a. Switching Time Test Circuit≤ 1 ≤ 0.1 %+-IRLML0100 N-Channel MOSFET
■ Typical Characterisitics
Fig 13. Typical On-Resistance Vs. DrainCurrentFig 12. Typical On-Resistance Vs. GateVoltage246810VGS, Gate -to -Source Voltage (V)150200250300350400450500550600
RDS(on),Drain-to-SourceOnResistance(mΩ)ID= 1.6A
TJ= 25°CTJ= 125°C
02468ID, Drain Current (A)170190210230250270
RDS(on),Drain-to-SourceOnResistance(mΩ)
Vgs = 10V Vgs = 4.5V
Fig 14. Typical Threshold Voltage Vs.Junction TemperatureTypical Power Vs. Time-75-50-250255075100125150TJ , Temperature ( °C )0.51.01.52.02.5
