当前位置：文档之家 › Q62702-C2304中文资料

Q62702-C2304中文资料

  • 格式：pdf
  • 大小：276.03 KB
  • 文档页数：8

Semiconductor Group1 04.96NPN Silicon AF Transistor BC 846 W...BC 850 WFeaturesqFor AF input stages and driver applicationsqHigh current gainqLow collector-emitter saturation voltageqLow noise between 30Hz and 15 kHzqComplementary types:BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W(PNP)

TypeMarkingOrdering code(tape and reel)Pin Configuration123PackageBC 846 AWBC 846 BWBC 847 AWBC 847 BWBC 847 CWBC 848 AWBC 848 BWBC 848 CWBC 849 BWBC 849 CWBC 850 BWBC 850 CW1 As1 Bs1 Es1 Fs1 Gs1 Js1 Ks1 Ls2 Bs2 Cs2 Fs2 GsQ62702-C2319Q62702-C2279Q62702-C2304Q62702-C2305Q62702-C2306Q62702-C2307Q62702-C2308Q62702-C2309Q62702-C2310Q62702-C2311Q62702-C2312Q62702-C2313BECSOT 323SOT 323SOT 323SOT 323SOT 323SOT 323SOT 323SOT 323SOT 323SOT 323SOT 323SOT 323

元器件交易网www.cecb2b.com BC 846W ... BC 850W

Semiconductor Group2Maximum RatingsDescriptionSymbolUnitCollector-emitter voltageVCEOVCollector-base voltageVCBOVCollector-emitter voltageVCESVCollector currentICmATotal power dissipation,TS=115 ˚CPtotmWJunction temperatureTj˚CStorage temperature rangeTstg–65 to 150˚CThermal ResistanceJunction - ambient1)Rth JA≤ 240K/WEmitter-base voltageVEBOVCollector peak currentICMmA100665250150805030200BC846WBC 847 WBC 849 W BC848 WBC 840 WJunction - soldering pointRth JS≤ 105K/W654530

805030

1)Package mounted on epoxy pcb 40mm× 40mm× 1.5mm/1cm2 Cu.

元器件交易网www.cecb2b.com BC 846W ... BC 850W

Semiconductor Group3Characteristic atTA = 25 ˚C, unless otherwise specified.

DC current gainIC = 10µA,VCE = 5VBC 846 AW...BC 848 AWBC 846 BW...BC 850 BWBC 847 CW...BC 850 CW

IC = 2mA,VCE = 5VBC 846 AW...BC 848 AWBC 846 BW...BC 850 BWBC 847 CW...BC 850 CW

VCollector-emitter breakdown voltageIC = 10mABC 846 WBC 847 W, BC 850 WBC 848 W, BC 849 WV(BR)CEO654530

–––

–––

nAµA

Collector-base cutoff currentVCB = 30VVCB = 30V, TA= 150 ˚CICBO––––15

5

UnitRatingsDescriptionSymbolmin.typ.max.DC Characteristics

VCollector-base breakdown voltage

1)

IC = 100µABC 846 WBC 847 W, BC 850 WBC 848 W, BC 849 W

V(BR)CBO

80

5030

–––

–––

VEmitter-base breakdown voltageIE = 10µABC 846 W, BC 847 WBC 848 W, BC 849 WBC 850V(BR)EBO65––––

mVCollector-emitter saturation voltage1)

IC = 10mA,IB = 0.5mAIC = 100mA,IB = 5mA

VCEsat

––90900250

650

–hFE

140250480180290520–––220450800VCollector-emitter breakdown voltageIC = 10µA,VBE = 0BC 846 WBC 847 W, BC 850 WBC 848 W, BC 849 WV(BR)CBO805030––––––mVBase-emitter saturation voltage1)IC = 10mA,IB = 0.5mAIC = 100mA,IB = 5mAVCEsat––700900––mVBase-emitter voltage1)IC = 2mA,VCE = 0.5mAIC = 10mA,VCE = 5mAVCEsat580–660–700770–

––

110200420

1)Pulse test :t≤300µs,D= 2%.

元器件交易网www.cecb2b.com BC 846W ... BC 850WSemiconductor Group4Characteristics atTA = 25 ˚C, unless otherwise specified.

Curves see BC 846...BC 840MHzTransition frequencyIC = 20mA,VCE = 5V,f = 100 MHzfT–250–

µVEquivalent noise voltageIC= 0.2 mA,VCE = 5V, RS = 2 kΩf = 10 Hz...50 HzBC 850 W

Vn

––0.135

UnitRatingsDescriptionSymbolmin.typ.max.

AC Characteristics

pFOutput capacitanceVCB = 10V,f = 1 MHzCobo

–2–

kΩShort-circuit input impedanceIC = 2 mA,VCE = 5V,f = 1 kHzBC 846 AW...BC 849 AWBC 846 BW...BC 850 BWBC 847 CW...BC 850 CW

h11e

–––

2.74.58.7

–––

pFInput capacitanceVEB = 0.5 V,f = 1 MHzCibo–10–

10–4Open-circuit reverse voltage transfer ratioIC = 2 mA,VCE = 5V,f = 1 kHzBC 846 AW...BC 849 AWBC 846 BW...BC 850 BWBC 847 CW...BC 850 CW

h12e

–––

1.52.03.0

–––

-Short-circuit forward current transfer ratioIC = 2 mA,VCE = 5V,f = 1 kHzBC 846 AW...BC 849 AWBC 846 BW...BC 850 BWBC 847 CW...BC 850 CW

h21e

–––

200330600

–––

µSOpen-circuit output admittanceIC = 2 mA,VCE = 5V,f = 1 kHzBC 846 AW...BC 849 AWBC 846 BW...BC 850 BWBC 847 CW...BC 850 CW

h22e

–––

183060

–––

dBNoise figureIC = 0.2 mA,VCE = 5V, RS = 2 kΩBC 849 Wf = 30 Hz...15 kHzBC 850 Wf = 1 kHz,∆f = 200 HzBC 849 WBC 850 WF–––

1.41.41.21.0

4344

元器件交易网www.cecb2b.com

合集下载

PM-DB2707中文资料

PM-DB2707中文资料

1.66:1 1:1.5 1:1.79
DCR (Ohms Max.)
IMPEDANCE SCHEMATICS
(Ohms MIN.)
/
PACKAGE
1-3=3.0, 4-8=3.0 4000 1/M
1-3=3.5, 4-8=3.0 7200 1/M
1-3=3.2, 4-8=3.0 4000 1/M
1-3=1.0, 4-8=3.5 4000 1/M
1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 4-8:1-3 1-2:4-3 1-2:3-4 1-5:6-2 1-5:6-2 1-5:6-2 1-5:6-2 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 4-8:1-3 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 4-8:1-3 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-5:6-2 1-5:6-2 1-5:6-2 1-3:4-8
TERMINALS / RATIO
1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8
1:1 1.4:1 1.25:1 1:2.12 1:2.5
TERMINALS / RATIO
1-3:5-7 1-3:5-7 1-3:5-7 1-3:5-7 1-3:5-7
1:.707 2:1
1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8 1-3:4-8
1:1 1.4:1 1.25:1 1:2.12 1:2.5
TERMINALS / RATIO
1-3:5-7 1-3:5-7 1-3:5-7 1-3:5-7 1-3:5-7
ST2302中文资料

ST2302中文资料

3.6ADESCRIPTIONThe ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.PIN CONFIGURATION SOT-23-3L1.Gate2.Source3.DrainS: Subcontractor Y: Year Code A: Process CodeFEATUREz 20V/3.6A, R DS(ON) = 80m-ohm@VGS = 4.5Vz 20V/2.4A, R DS(ON) = 95m-ohm@VGS = 2.5Vz Super high density cell design forextremely low R DS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L package design3.6AABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted )Parameter Symbol Typical Unit Drain-Source Voltage V DSS 20 V Gate-Source VoltageV GSS +/-12V Continuous Drain Current (TJ=150J ) T A =25¢JT A =70J I D2.8 2.2A Pulsed Drain CurrentI DM 10 A Continuous Source Current (Diode Conduction) I S 1.6 A Power DissipationT A =25¢J T A =70JP D 1.250.8W Operation Junction Temperature T J 150 J Storgae Temperature RangeT STG -55/150 J Thermal Resistance-Junction to AmbientR cJA 100J /W3.6AELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted )Parameter Symbol Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage V (BR)DSS V GS =0V,I D =10uA 20 V Gate Threshold Voltage V GS(th) V DS =V GS ,I D =50uA 0.451.2 VGate Leakage CurrentI GSS V DS =0V,V GS =8V 100nAV DS =20V,V GS =0V 1Zero Gate Voltage Drain CurrentI DSS V DS =20V,V GS =0V T J =55J10 uAOn-State Drain Current I D(on) V DS 5V,V GS =4.5V V DS 5V,V GS =2.5V6 4 ADrain-source On-Resistance R DS(on)V GS =4.5V,I D =3.6AV GS =2.5V,I D =3.1A0.05 0.07 0.080.095Forward Transconductance g fsV DS =5V,I D =3.6V 10 SDiode Forward Voltage V SDI S =-1.6A,V GS =0V 0.85 1.2 VDynamicTotal Gate Charge Qg 5.4 10 Gate-Source Charge Qgs 0.65Gate-Drain Charge Qgd V DS =10V,V GS =4.5VI D -3.6A 1.4nC Input Capacitance Ciss 340Output CapacitanceCoss 115Reverse Transfer Capacitance CrssV DS =10V,V GS =0VF=1MHz 33pF 12 25Turn-On Timet d(on)t r 36 60 34 60 Turn-Off Timet d(off) t fV DD =10V,R L =5.5I D =3.6A,V GEN =4.5VR G =610 25nSN Channel Enchancement Mode MOSFET ST2302 3.6ASOT-23-3L PACKAGE OUTLINEN Channel Enchancement Mode MOSFET ST2302 3.6ATYPICAL CHARACTERISTICSN Channel Enchancement Mode MOSFET ST2302 3.6ATYPICAL CHARACTERISTICS(25J Unless noted)。

TXB0102资料

TXB0102资料

– 200-V Machine Model (A115-A)
– 1500-V Charged-Device Model (C101)
DCT OR DCU PACKAGE (TOP VIEW)
B2 1 GND 2 VCCA 3
A2 4
8 B1 7 VCCB 6 OE 5 A1
YZP PACKAGE (BOTTOM VIEW)
NFD_
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at /sc/package.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at .
SCES641 – MAY 2007

TA –40°C to 85°C
ORDERING INFORMATION
PACKAGE (1) (2)
ORDERABLE PART NUMBER TOP-SIDE MARKING(3)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP
NanoFree is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
C88201004中文资料

C88201004中文资料

元器件交易网
Rel:00 March, 2002
Northern Technologies to Provertha Cross Reference
NOTES: COMPONENTS LENTS. MECHANICAL SPECIFICATIONS MAY VARY.
Provertha PART NO. 17 09 DC 25 001 17 09 OB 18 Y 001 17 09 OG 18 T 000 17 09 OM 18 T 001 17 15 DC 25 001 17 15 OB 18 Y 001 17 15 OG 18 T 000 17 15 OM 18 T 001 17 25 DC 25 001 17 25 DC 25 001 17 25 OB 18 Y 001 17 25 OG 18 T 000 17 25 OM 18 T 001 17 37 DC 25 001 17 37 OB 18 Y 001 17 37 OG 18 T 000 17 37 OM 18 T 001 17 50 DC 25 001 17 50 OB 18 Y 001 17 50 OG 18 T 000 17 50 OM 18 T 001 37 25 OM 001 47 09 DC 25 001 47 09 OB 18 Y 001 47 09 OG 18 T 000 47 09 OM 18 T 001 47 15 DC 25 001 47 15 OB 18 Y 001 47 15 OG 18 T 000 47 15 OM 18 T 001 47 25 DC 25 001 47 25 OB 18 Y 001 47 25 OG 18 T 000 47 25 OM 18 T 001 47 37 OB 18 Y 001 47 37 OG 18 T 000 47 37 OM 18 T 001 51 09 E4A 001 Provertha