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SBR40U150CT;中文规格书,Datasheet资料

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SBR40U150CT Document number: DS31237 Rev. 5 - 2 1 of 3

www.diodes.com December 2009

© Diodes Incorporated

SBR40U150CTSBR is a registered trademark of Diodes Incorporated. 40A SBR® SUPER BARRIER RECTIFIER

Features • Ultra Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • 150ºC Operating Junction Temperature • Lead Free Finish, RoHS Compliant (Note 2) • Also Available in Green Molding Compound (Note 5) Mechanical Data • Case: TO-220AB • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 1.85 grams (approximate)

Maximum Ratings (Per Leg) @TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

VRRM

VRWM

VRM

150 V

Average Rectified Output Current Per Device (Per Leg) (Total) IO20 40 A

Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM250 A

Thermal Characteristics (Per Leg) Characteristic Symbol Value Unit Typical Thermal Resistance Thermal Resistance, Junction to Ambient (Note 3) Thermal Resistance Junction to Case (Note 3) RθJA RθJC 10.6 0.6 ºC/W

Operating and Storage Temperature Range T

J, TSTG -65 to +175 ºC

Electrical Characteristics (Per Leg) @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (per leg) VF- 0.80 0.66 0.86 0.71 V IF = 20A, TJ = 25ºC

IF = 20A, TJ = 125ºC

Leakage Current (Note 1) IR- 54 10 500 100 μA

mA V

R = 150V, TJ = 25ºC

VR = 150V, TJ = 125ºC

Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html. 3. Device mounted on heatsink (Black Aluminum, 50mm x 30mm x 23mm)

TO-220AB Top View Package Pin Out

Configuration

TO-220AB

Bottom View

http://oneic.com/ SBR40U150CT Document number: DS31237 Rev. 5 - 2 2 of 3

www.diodes.com December 2009

© Diodes Incorporated

SBR40U150CTSBR is a registered trademark of Diodes Incorporated. 01020300255075100125150I AVERAGE FORWARD CURRENT (A)

F(AV),T, AMBIENT TEMPERATURE (C)Fig. 3 Forward Current Derating CurveA

°

5

1525175R = RPer ElementθθJAJC

R = RTotal DeviceθθJAJC

R = 10.6°C/WPer ElementNote 3

θJA

Ordering Information (Notes 4 & 5)

Part Number Case Packaging SBR40U150CT TO-220AB 50 pieces/tube SBR40U150CT-G TO-220AB 50 pieces/tube

Notes: 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Green Molding Compound version part numbers, add "-G" suffix to part number above. Examples: SBR40U150CT-G.

Marking Information

SBR40U150CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code Marking YY = Last two digits of year (ex: 07 = 2007) WW = Week (01-52) 40U150CT

YYWWAB

SBR

http://oneic.com/ SBR40U150CT Document number: DS31237 Rev. 5 - 2 3 of 3

www.diodes.com December 2009

© Diodes Incorporated

SBR40U150CTSBR is a registered trademark of Diodes Incorporated. Package Outline Dimensions

IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

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February 2012Doc ID 15360 Rev 51/15STGW40N120KD STGWA40N120KD40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures■Low on-losses ■High current capability ■Low gate charge■Short circuit withstand time 10 µs■IGBT co-packaged with Ultrafast free-wheeling diodeApplications■Motor controlDescriptionThis high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.Table 1.Device summaryOrder codes Markings Package Packaging STGW40N120KD GW40N120KD TO-247Tube STGWA40N120KDGWA40N120KDTO-247 long leadsTubeContents STGW40N120KD, STGWA40N120KDContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142/15 Doc ID 15360 Rev 5STGW40N120KD, STGWA40N120KD Electrical ratingsDoc ID 15360 Rev 53/151 Electrical ratingsTable 2.Absolute maximum ratingsSymbol ParameterValue Unit V CES Collector-emitter voltage (V GE = 0)1200V I C (1)1. Calculated according to the iterative formula:Continuous collector current at T C = 25 °C 80A I C (1)Continuous collector current at T C = 100 °C 40A I CL (2)2.Vclamp = 80% of V CES , T j =125 °C, R G =10 Ω, V GE =15 VTurn-off latching current 85A I CP (3)3. Pulse width limited by maximum junction temperature and turn-off within RBSOAPulsed collector current 120A V GE Gate-emitter voltage±25V t SCW Short circuit withstand time, V CE = 0.5 V (BR)CEST j = 125 °C, R G = 10 Ω, V GE = 12 V 10µs P TOT Total dissipation at T C = 25 °C240W I F Diode RMS forward current at T C = 25 °C 30A I FSM Surge non repetitive forward current t p = 10 ms sinusoidal100A T jOperating junction temperature– 55 to 125°CTable 3.Thermal dataSymbol ParameterValue Unit R thj-case Thermal resistance junction-case IGBT 0.42°C/W R thj-case Thermal resistance junction-case diode 1.6°C/W R thj-ambThermal resistance junction-ambient50°C/WI C T C ()T j max ()T C–R thj c –V CE sat ()max ()T j max ()I C T C (),()×-------------------------------------------------------------------------------------------------------=Electrical characteristics STGW40N120KD, STGWA40N120KD4/15 Doc ID 15360 Rev 52 Electrical characteristicsT J = 25 °C unless otherwise specified.Table 4.StaticSymbolParameterTest conditions Min.Typ.Max.Unit V (BR)CES Collector-emitterbreakdown voltage(V GE = 0)I C = 1 mA1200V V CE(sat)Collector-emitter saturationvoltageV GE = 15 V , I C = 30 AV GE = 15 V , I C = 30 A,T J =125 °C 2.82.73.85V V V GE(th)Gate threshold voltage V CE = V GE , I C = 1mA 4.56.5V I CES Collector cut-off current (V GE = 0)V CE =1200 VV CE =1200 V , T J =125 °C 50010µA mA I GESGate-emitter leakage current (V CE = 0)V GE =± 20 V± 100nATable 5.DynamicSymbol ParameterTest conditionsMin.Typ.Max.Unit C ies C oes C res Input capacitance Output capacitance Reverse transfer capacitanceV CE = 25 V , f = 1 MHz, V GE =0-257719639.5-pF pF pF Q g Q ge Q gcTotal gate charge Gate-emitter charge Gate-collector chargeV CE = 960 V ,I C = 30 A,V GE =15 V-12622.267-nC nC nCTable 6.Switching on/off (inductive load)Symbol ParameterTest conditions Min.Typ.Max.Unit t d(on)t r (di/dt)on Turn-on delay time Current rise timeTurn-on current slope V CC = 960 V , I C = 30 A R G = 10 Ω, V GE = 15 V , (see Figure 16)-4840540-ns ns A/µs t d(on)t r (di/dt)on Turn-on delay time Current rise timeTurn-on current slope V CC = 960 V , I C = 30 A R G = 10 Ω, V GE = 15 V ,T J = 125 °C (see Figure 16)-4538665-ns ns A/µs t r (V off )t d (off )t f Off voltage rise time Turn-off delay time Current fall time V CC = 960 V , I C = 30 A R G = 10 Ω, V GE = 15 V , (see Figure 16)-84338210-ns ns ns t r (V off )t d (off )t fOff voltage rise time Turn-off delay time Current fall timeV CC = 960 V , I C = 30 A R G = 10 Ω, V GE = 15 V ,T J = 125 °C (see Figure 16)-144420360-ns ns nsSTGW40N120KD, STGWA40N120KD Electrical characteristicsDoc ID 15360 Rev 55/15Table 7.Switching energy (inductive load)Symbol ParameterTest conditions Min.Typ.Max.Unit Eon (1)E off (2)E ts 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 16. If the IGBT is offeredin a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C)2.Turn-off losses include also the tail of the collector currentT urn-on switching losses T urn-off switching losses T otal switching losses V CC = 960 V , I C = 30 A R G =10 Ω, V GE = 15 V , (see Figure 16)- 3.75.79.4-mJ mJ mJ Eon (1)E off (2)E tsT urn-on switching losses T urn-off switching losses T otal switching lossesV CC = 960 V , I C = 30 A R G =10 Ω, V GE = 15 V ,T J = 125 °C (see Figure 16)- 4.79.314-mJ mJ mJTable 8.Collector-emitter diodeSymbol ParameterTest conditions Min.Typ.Max.Unit V F Forward on-voltage I F = 20 AI F = 20 A, T J = 125 °C - 1.91.7-V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A, V R = 45 V ,di/dt = 100 A/µs (see Figure 19)-842355.6-ns nC A t rr Q rr I rrmReverse recovery time Reverse recovery charge Reverse recovery currentI F = 20 A, V R = 45 V ,T J = 125 °C, di/dt = 100 A/µs (see Figure 19)-1527229-ns nC AElectrical characteristics STGW40N120KD, STGWA40N120KD6/15 Doc ID 15360 Rev 52.1 Electrical characteristics (curves)Figure 4.Collector-emitter on voltage vs.Figure 5.Collector-emitter on voltage vs. Figure 6.Gate charge vs. gate-sourceFigure 7.Capacitance variationsSTGW40N120KD, STGWA40N120KD Electrical characteristicsDoc ID 15360 Rev 57/15Figure 8.Normalized gate threshold voltageFigure 9.Normalized breakdown voltage vs. Figure 10.Switching losses vs. collectorFigure 11.Switching losses vs. gateElectrical characteristics STGW40N120KD, STGWA40N120KD Figure 14.Turn-off SOA Figure 15.Forward voltage drop vs. forward8/15 Doc ID 15360 Rev 5STGW40N120KD, STGWA40N120KD Test circuitsDoc ID 15360 Rev 59/153 Test circuitsFigure 16.Test circuit for inductive loadFigure 17.Gate charge test circuitPackage mechanical data STGW40N120KD, STGWA40N120KD 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOP ACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.Table 9.TO-247 mechanical datamm.Dim.Min.Typ.Max.A 4.85 5.15A1 2.20 2.60b 1.0 1.40b1 2.0 2.40b2 3.0 3.40c0.400.80D19.8520.15E15.4515.75e 5.30 5.45 5.60L14.2014.80L1 3.70 4.30L218.50∅P 3.55 3.65∅R 4.50 5.50S 5.30 5.50 5.7010/15 Doc ID 15360 Rev 5分销商库存信息: STMSTGW40N120KD。