IXTK62N25中文资料

© 1996 IXYS All rights reservedSymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C1000V V CGR T J = 25°C to 150°C; R GE = 1 M Ω1000V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 50A I C90T C = 90°C 25A I CMT C = 25°C, 1 ms100A SSOA V GE = 15 V, T VJ = 125°C, R G = 33 Ω I CM = 50A (RBSOA)Clamped inductive load, L = 100 µH @ 0.8 V CESP C T C = 25°C200W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CM d Mounting torque (M3) 1.13/10Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gMaximum lead temperature for soldering 300°C1.6 mm (0.062 in.) from case for 10 sSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 3 mA, VGE = 0 V 1000V V GE(th)I C= 250 µA, V CE = V GE2.55V I CES V CE = 0.8 • V CES T J = 25°C 250µA V GE = 0 VT J = 125°C1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V25N100 3.5V 25N100A4.0VTO-247 AD (IXGH)GCETO-204 AE (IXGM)CG = Gate, C = Collector,E = Emitter,TAB = CollectorV CESI C25V CE(sat)Low V CE(sat)IXGH/IXGM 25 N1001000 V 50 A 3.5 V High speed IGBTIXGH/IXGM 25 N100A 1000 V50 A4.0 VFeaturesl International standard packages l 2nd generation HDMOS TM process l Low V CE(sat)-for low on-state conduction losses l High current handling capability l MOS Gate turn-on -drive simplicitylVoltage rating guaranteed at high temperature (125°C)Applicationsl AC motor speed control l DC servo and robot drives l DC choppersl Uninterruptible power supplies (UPS)lSwitch-mode and resonant-mode power suppliesAdvantageslEasy to mount with 1 screw (TO-247)(isolated mounting screw hole)lHigh power density91516E (3/96)查询IXGH25N100供应商IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025IXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.g fs I C = I C90; V CE = 10 V,815S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %C ies 2750pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz200pF C res 50pF Q g 130180nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES2560nC Q gc 5590nC t d(on)100ns t ri 200ns t d(off)500ns t fi 25N100A500ns E off 25N100A 5mJ t d(on)100ns t ri 250ns E on 3.5mJ t d(off)7201000ns t fi 25N1009503000ns 25N100A 8001500ns E off 25N10010mJ 25N100A8mJ R thJC 0.62K/WR thCK0.25K/WInductive load, T J = 25°CI C = I C90, V GE = 15 V, L = 300 µH,V CE = 0.8 V CES , R G = R off = 33 ΩRemarks: Switching times may increasefor V CE (Clamp) > 0.8 • V CES ,higher T J or increased R G Inductive load, T J = 125°C I C = I C90, V GE = 15 V, L = 300 µH V CE = 0.8 V CES , R G = R off = 33 ΩRemarks: Switching timesmay increasefor V CE (Clamp) > 0.8 • V CES ,higher T J or increased R GFig. 1Saturation CharacteristicsFig.7Gate ChargeIXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025。

Low Power, Low Profile±2 g Dual Axis Accelerometer withI2C InterfaceMXC6202G/H/M/N FEATURESRoHS compliantI2C Slave, FAST (≤400 KHz.) mode interface1.8V compatible IOEmbedded Power up/down and self-test functionOn-chip temperature sensor availableEight customer defined 7-bit addresses2.7 V to3.6 V single supply continuous operation Monolithic CMOS ICLow power consumption: typically <2 mA @ 3.0 V Resolution better than 1 milli-gOn chip mixed signal processing>50,000 g shock survival ratingLow profile LCC package: 5mm X 5mm X 1.55mmAPPLICATIONSInformation Appliances – Cell Phones, PDA’s, Computer Peripherals, Mouse, Smart PensConsumer – LCD Projectors, Pedometers, Blood Pressure Monitor, Digital CamerasGaming – Joystick/RF Interface/Menu Selection/Tilt SensingGPS – Electronic Compass Tilt Correction, Dead Reckoning AssistGENERAL DESCRIPTION The MXC6202G/H/M/N are low cost, dual axis accelerometers fabricated on a standard, submicron CMOS process. It is a complete sensing system with on-chip mixed signal processing and integrated I2C bus, allowing the device to be connected directly to a microprocessor eliminating the need for A/D converters or timing resources. The MXC6202G/H/M/N measures acceleration with a full-scale range of ±2 g and a sensitivity of512counts/g (G/M) or 128counts/g (H/N) @3.0 V at 25°C. It can measure both dynamic acceleration (e.g. vibration) and static acceleration (e.g. gravity). TheMXC6202G/H/M/N design is based on heat convection and requires no solid proof mass.NoConnectNoConnectSCLSDA MXC6202G/H/M/N FUNCTIONAL BLOCK DIAGRAMThis design eliminates the stiction problems associated with legacy technologies and provides shock survival greater than 50,000g’s. Memsic’s solid state design leads to significantly lower failure rates in customer applications and lower loss due to handling during manufacturing and assembly processesThe MXC6202G/H/M/N is packaged in a hermetically sealed, low profile LCC surface mount package (5 mm x 5 mm x 1.55 mm) and is available in operating temperature ranges of 0°C to +70°C (G/H) and-40°C to +85°C(M/N).The MXC6202G/H/M/N provides two I2C digital outputs with 400 KHz, fast mode operation.The maximum noise floor is 1 m g/Hz allowing signals below 1 milli-g to be resolved at 1 Hz bandwidthInformation furnished by MEMSIC is believed to be accurate and reliable. However, no responsibility is assumed by MEMSIC for its use, or for any infringements of patents or other rights of third parties which may result from its use. No license is ©MEMSIC, Inc.800 Turnpike St., Suite 202, North Andover, MA 01845 Tel: 978.738.0900 Fax: 978.738.0196ELECTRICAL CHARACTERISTICS (Measurements @ 25°C, Acceleration = 0 g unless otherwise noted; V DD = 3.0V unless otherwise specified)1 Guaranteed by measurement of initial offset and sensitivity2 Alignment error is specified as the angle between the true and indicatedaxis of sensitivity3 Cross axis sensitivity is the algebraic sum of the alignment and theinherent sensitivity errors4 Output settled to within ± 17mgI 2C INTERFACE I/O CHARACTERISTICSParameter Symbol Test Condition Min. Typ. Max. UnitLogic Input Low Level V IL -0.5 0.6 VLogic Input High Level V IH 1.4 VHysteresis of Schmitt input V hys 0.2 V Logic Output Low Level V OL 0.4Input Leakage Current I i 0.1Vdd<V in <0.9Vdd -1010 µASCL Clock Frequency f SCL 0 400 kHzSTART Hold Time t HD;STA 0.6 µSSTART Setup Time t SU;STA 0.6 µSLOW period of SCL t LOW 1.3 µSHIGH period of SCL t HIGH 0.6 µSData Hold Time t HD;DAT 0 0.9 µS Data Setup Time t SU;DAT 0.1 µSRise Time t r From V IL to V IH 0.3 µS Fall Timet f From V IH to V IL0.3 µSBus Free Time Between STOP andSTARTt BUF 1.3 µSSTOP Setup Time t SU;STO0.6 µSTiming DefinitionOrdering GuideTYPICAL CHARACTERISTICS, % OF UNITS (@ 25°C, V DD = 3V)0g OffsetY Deviation to Target0g OffsetX Deviation to TargetSensitivityX Deviation to Target SensitivityY Deviation to TargetOVER TEMPERATURE CHARACTERISTICSAcceleration in any direction will disturb the temperature profile, due to free convection heat transfer, causing it to be asymmetrical. The temperature, and hence voltage output of the four thermopiles will then be different. The differential voltage at the thermopile outputs is directly proportional to the acceleration. There are two identical acceleration signal paths on the accelerometer, one to measure acceleration in the x-axis and one to measure acceleration in the y-axis. Please visit the MEMSIC website at for a picture/graphicdescription of the free convection heat transfer principle.THEORY OF OPERATIONThe MEMSIC device is a complete dual-axis acceleration measurement system fabricated on a monolithic CMOS IC process. The device operation is based on heat transfer by natural convection and operates like other accelerometers except that the proof mass in the MEMSIC sensor is a gas.A single heat source, centered in the silicon chip is suspended across a cavity. Equally spaced aluminum/polysilicon thermopiles (groups ofthermocouples) are located equidistantly on all four sides of the heat source (dual axis). Under zero acceleration, a temperature gradient is symmetrical about the heat source, so that the temperature is the same at all four thermopiles, causing them to output the same voltage.MXC6202G/H/M/N PIN DESCRIPTIONSV DD – This is the supply input for the circuits and the sensor heater in the accelerometer . The DC voltage should be between 2.7 and 3.6 volts. Refer to the section on PCB layout and fabrication suggestions for guidance on external parts and connections recommended.GND – This is the ground pin for the accelerometer .COM – This pin should be connected to ground.TEST – Do Not Connect, factory use only.VDD2– This pin is the I 2C input digital power supply, the voltage on this pin determines the I 2C bus logic voltage, and is 1.8V compatible. Note: The voltage on this pin should never go higher than the voltage on V DD , if VDD2 has a lower power supply voltage than V DD , power should be applied to V DD first.SDA – This pin is the I 2C serial data line, and operates in FAST (400 KHz.) mode.SCL – This pin is the I 2C serial clock line, and operates in FAST (400 KHz.) mode. DISCUSSION OF TILT APPLICATIONS ANDRESOLUTIONTilt Applications: One of the most popular applications of the MEMSIC accelerometer product line is intilt/inclination measurement. An accelerometer uses the force of gravity as an input to determine the inclination angle of an object.A MEMSIC accelerometer is most sensitive to changes in position, or tilt, when the accelerometer’s sensitive axis is perpendicular to the force of gravity, or parallel to theEarth’s surface. Similarly, when the accelerometer’s axis is parallel to the force of gravity (perpendicular to the Earth’s surface), it is least sensitive to changes in tilt.Following table and figure help illustrate the outputchanges in the X- and Y-axes as the unit is tilted from +90° to 0°. Notice that when one axis has a small change in output per degree of tilt (in m g ), the second axis has a large change in output per degree of tilt. The complementary nature of these two signals permits low cost accurate tilt sensing to be achieved with the MEMSIC device (referenceRESOLUTIONThe accelerometer resolution is limited by noise. Theoutput noise will vary with the measurement bandwidth.With the reduction of the bandwidth, by applying anexternal low pass filter, the output noise drops. Reductionof bandwidth will improve the signal to noise ratio and theresolution. The output noise scales directly with the squareroot of the measurement bandwidth. The maximumamplitude of the noise, its peak- to- peak value,approximately defines the worst case resolution of themeasurement. With a simple RC low pass filter, the rmsnoise is calculated as follows:Noise (mg rms) = Noise(mg/Hz) *)6.1*)((HzBandwidthThe peak-to-peak noise is approximately equal to 6.6 timesthe rms value (for an average uncertainty of 0.1%).HARDWARE DESIGN CONSIDERATION1. One capacitor is recommended for best rejection ofpower supply noise (reference figure below). Thecapacitor should be located as close as possible to thedevice supply pin (V DD). The capacitor lead lengthshould be as short as possible, and a surface mountcapacitor is preferred. For typical applications, the2. Robust low inductance ground wiring should be used.3. Care should be taken to ensure there is “thermalsymmetry” on the PCB immediately surrounding theMEMSIC device and that there is no significant heatsource nearby. Based on the experiment, with a120degC heating source at 11mm away of MEMSICdevice, the offset change will be within 5mg.4. A metal ground plane should be added directly beneaththe MEMSIC device. The size of the plane should besimilar to the MEMSIC device’s footprint and be asthick as possible.5. Vias can be added symmetrically around the groundplane. These vias will increase the thermal isolation ofthe device from the rest of the PCB and improveperformance.SOFTWARE DESIGN CONSIDERATIONIn order to further reduce the noise on the I2C bus, werecommend to use the following software limiter filter inthe acceleration signal process routine:Int iAccReal[0x02];//Real-time acceleration data arrayInt iAccFilter;//Filtered acceleration dataSoftwareLimiterFilter(){if (abs(iAccReal[0x00]-iAccReal[0x01])<0x80) theniAccFilter=iAccReal[0x00];iAccReal[0x01]= iAccReal[0x00];}I2C INTERFACE DESCRIPTIONA slave mode I2C circuit has been implemented into theMemsic thermal accelerometer as a standard interface forcustomer applications. The A/D converter and MCUfunctionality have been added to the Memsic sensor,thereby increasing ease-of-use, and lowering powerconsumption, footprint and total solution cost.The I2C (or Inter IC bus) is an industry standard bi-directional two-wire interface bus. A master I2C device canoperate READ/WRITE controls to an unlimited number ofdevices on the bus by proper addressing. The Memsicaccelerometer operates only in a slave mode, i.e. onlyresponding to calls by a master deviceI2C BUS CHARACTERISTICSI2C busThe two wires in I2C bus are called SDA (serial data line)and SCL (serial clock line). In order for a data transfer tostart, the bus has to be free, which is defined by both wiresin a HIGH output state. Due to the open-drain/pull-upresistor structure and wire-AND operation, any device onthe bus can pull lines low and overwrite a HIGH signal.The data on the SDA line has to be stable during the HIGHperiod of the SCL line. In other words, valid data can onlychange when the SCL line is LOW.I2C BUS DATA TRANSFERA data transfer is started with a “START” condition and ended with a “STOP” condition. A “START” condition is defined by a HIGH to LOW transition on the SDA line while SCL line is HIGH. A “STOP” condition is defined by a LOW to HIGH transition on the SDA line while SCL line is HIGH. All data transfer in I2C system is 8-bits long. Each byte has to be followed by an acknowledge bit. Each data transfer involves a total of 9 clock cycles. Data is transferred starting with the most significant bit (MSB). After a “START” condition, master device calls a specific slave device, in our case, the Memsic accelerometer with a 7-bit device address. To avoid potential address conflict, either by ICs from other manufacturers or by other Memsic accelerometers on the same bus, a total of 8 different addresses can be programmed into a Memsic device at thefactory. Following the 7-bit address, the 8th bit determines the direction of data transfer: [1] for READ and [0] for WRITE. After being addressed, the available Memsic device being called will respond by an “Acknowledge” signal, which is pulling SDA line LOW.In order to read an acceleration signal, the master device should operate a WRITE action with a code of [xxxxxxx0] into the Memsic device 8-bit internal register.Bit Name Function0 PD (Power Down) Power down [1]/on [0]1 ST (Self-test) Self-test on [1]/off [0]2 BGTST (bandgap test) Bandgap test [1]/normal[0]3 TOEN (temperatureout enable)Temp Out EN [1]/disable[0]The ST bit serves as a self-test function to verify the Memsic accelerometer is operating properly. BGTST is used to calibrate the temperature output signal’s initial offset. By flipping the BGTST bit and taking the average of two readings, the temperature output initial offset will be calibrated to within datasheet specifications.After writing code of [xxxxxxx0] into the control register,if a “READ” signal is received, during next 9 clock cycles, the Memsic device being called will transfer 8-bits of datato the I2C bus. If an “Acknowledge” by master device is received, the Memsic device will continue to transfer the next byte. The same procedure repeats until 5 bytes of data are transferred to master device. Those 5 bytes of data are defined as following (“T” is temperature output):1. Internal register2. MSB X/T axis3. LSB X/T axis4. MSB Y axis5. LSB Y axisEven though each axis consists of two bytes, which are 16-bits of data, the actual accelerometer resolution is limited to output register refresh rate. Unused MSB’s will be simply filled by “0”s.Note that temperature output shares the same registers with X channel output. Customer can select which signal needsto be read out by using TOEN bit.Resolution 10 bits 12 bits Refreshing rate 400Hz 100Hz Zero-G Offset 512 2048The master can stop slave data transfer after any of the five bytes by not sending an acknowledge command and followed by a “STOP” condition.Data transferPOWER DOWN MODEThe Memsic accelerometer can enter a power down mode by the master device writing a code of [xxxxxxx1] into the accelerometer’s internal register. A wake up operation is performed when the master writes into the same register a code of [xxxxxxx0]. Note that the MXC6202G/H/M/N needs about 75mS (typical) for power up time. EXAMPLE OF DATA COMMUNICATIONFirst cycle: START followed by a calling to slave address [0010xxx] to WRITE (8th SCL, SDA keep low). [xxx] Is determined by factory programming, a total of 8 different addresses are available.Second cycle: After an acknowledge signal is received by the master device (Memsic device pulls SDA line low during 9th SCL pulse), master device sends “[00000000]” as the target address to be written into. Memsic device should acknowledge at the end (9th SCL pulse). Note: since Memsic device has only one internal register that can be written into, user should always indicate “[00000000]” as the write address.Third cycle: Master device writes to internal Memsic device memory code “[xxxxxxx0]” as a wake-up call. The Memsic device should send acknowledge signal. A STOP command indicates the end of write operation. A 75msS (typical) wait period should be given to Memsic device to return from a power-down mode. The delay value depends on the type of Memsic device. Generally speaking, lowFourth cycle: Master device sends a START command followed by calling Memsic device address with a WRITE (8th SCL, SDA keep low). An “acknowledge” should be sent by Memsic device at the end.Fifth cycle: Master device writes to Memsic device a “[00000000]” as the starting address for which internal Eighth cycle: Master device continues cycle SCL line, next byte of internal memory should appear on SDA line (MSB of X channel). The internal memory address pointer automatically moves to the next byte. Master acknowledges.Ninth cycle: LSB of X channel. In the case that TOEN bit。

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode• 40lower E off compared to previous generation• Short circuit withstand time – 10 µs • Designed for:- Motor controls- Inverter - SMPS• NPT-Technology offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability • Pb-free lead plating; RoHS compliant• Qualified according to JEDEC 1for target applications• Complete product spectrum and PSpice Models : /igbt/ TypeV CEI CE offT j Marking PackageSKW25N120 1200V 25A 2.9mJ 150°CK25N120 PG-TO-247-3-21Maximum RatingsParameter Symbol Value Unit Collector-emitter voltage V C E 1200 V DC collector current T C = 25°C T C = 100°CI C46 25Pulsed collector current, t p limited by T jmax I C p u l s 84 Turn off safe operating area V CE ≤ 1200V, T j ≤ 150°C - 84 Diode forward current T C = 25°C T C = 100°CI F42 25Diode pulsed current, t p limited by T jmax I F p u l s 80 AGate-emitter voltage V G E ±20 V Short circuit withstand time 2V GE = 15V, 100V ≤V CC ≤1200V, T j ≤ 150°Ct S C 10µsPower dissipation T C = 25°CP t o t313 WOperating junction and storage temperature T j , T s t g -55...+150 Soldering temperature,wavesoldering, 1.6mm (0.063 in.) from case for 10sT s260°C1 J-STD-020 and JESD-0222Allowed number of short circuits: <1000; time between short circuits: >1s.PG-TO-247-3-21 (TO-247AC)Thermal ResistanceParameter Symbol Conditions Max. Value Unit CharacteristicIGBT thermal resistance, junction – caseR t h J C 0.4 Diode thermal resistance, junction – case R t h J C D 1.15Thermal resistance, junction – ambient R t h J A40K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specifiedValueParameter Symbol Conditions min. typ. max. UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V,I C =1500µA 1200 - - Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =25A T j =25°C T j =150°C2.5 -3.1 3.7 3.64.3 Diode forward voltageV F V G E =0V, I F =25A T j =25°C T j =150°C-2.0 1.752.5Gate-emitter threshold voltage V G E (t h ) I C =1000µA,V C E =V G E3 4 5 V Zero gate voltage collector current .I C E SV CE =1200V,V GE =0V T j =25°C T j =150°C- - - - 350 1400 µAGate-emitter leakage current I G E S V CE =0V,V GE =20V - - 100 nATransconductance g f s V C E =20V, I C =25A20-S Dynamic Characteristic Input capacitance C i s s - 2150 2600 Output capacitanceC o s s - 260 310 Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz- 110 130 pF Gate chargeQ G a t e V C C =960V, I C =25A V G E =15V- 225 300 nCInternal emitter inductanceMeasured 5mm (0.197 in.) from case L E -13-nHShort circuit collector current 1)I C (S C )V G E =15V,t S C ≤10µs100V ≤V C C ≤1200V, T j ≤ 150°C- 240 - A1)Allowed number of short circuits: <1000; time between short circuits: >1sSwitching Characteristic, Inductive Load, at T j =25 °CValueParameter Symbol Conditions Min. typ. max. UnitIGBT Characteristic Turn-on delay time t d (o n ) - 45 60 Rise timet r - 40 52 Turn-off delay time t d (o f f ) - 730 950 Fall time t f - 30 39 ns Turn-on energy E o n - 2.2 2.9 Turn-off energy E o f f - 1.5 2.0 Total switching energyE t sT j =25°C,V C C =800V,I C =25A,V G E =15/0V, R G =22Ω, L σ1)=180nH, C σ1)=40pFEnergy losses include “tail” and diode reverse recovery.- 3.7 4.9mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F- - -90nsDiode reverse recovery charge Q r r - 1.0 µC Diode peak reverse recovery current I r r m- 20 A Diode peak rate of fall of reverse recovery current during t Fdi r r /dtT j =25°C,V R =800V, I F =25A, di F /dt =650A/µs- 470 A/µsSwitching Characteristic, Inductive Load, at T j =150 °CValueParameter Symbol Conditions Min. typ. max. UnitIGBT Characteristic Turn-on delay time t d (o n ) - 50 60 Rise timet r - 36 43 Turn-off delay time t d (o f f ) - 820 990 Fall time t f - 42 50 ns Turn-on energy E o n - 3.8 4.6 Turn-off energy E o f f - 2.9 3.8 Total switching energyE t sT j =150°CV C C =800V,I C =25A,V G E =15/0V, R G =22Ω, L σ1)=180nH, C σ1)=40pFEnergy losses include “tail” and diode reverse recovery. - 6.7 8.4mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F- - -280nsDiode reverse recovery charge Q r r - 4.3 µC Diode peak reverse recovery current I r r m- 32 A Diode peak rate of fall of reverse recovery current during t Fdi r r /dtT j =150°CV R =800V, I F =25A, di F /dt =750A/µs- 130 A/µs1)Leakage inductance L σ and stray capacity C σ due to dynamic test circuit in figure E.I C , C O L L E C T O R C U R R E N T10Hz100Hz 1kHz 10kHz 100kHz0A20A40A60A80A100AI C , C O L L E C T O R C U R R E N T1V 10V 100V 1000V0.1A1A10A100Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency(T j ≤ 150°C, D = 0.5, V CE = 800V, V GE = +15V/0V, R G = 22Ω) Figure 2. Safe operating area (D = 0, T C = 25°C, T j ≤ 150°C)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C0W 50W 100W 150W 200W 250W 300W350W I C , C O L L E C T O R C U R R E N T25°C50°C 75°C 100°C 125°C0A10A20A30A40A50A60AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function of case temperature (T j ≤ 150°C)Figure 4. Collector current as a function of case temperature(V GE ≤ 15V, T j ≤ 150°C)I C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V 6V 7V 0A 10A 20A 30A 40A 50A60A 70A 80A I C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V 6V 7V0A10A 20A 30A 40A 50A 60A70A 80AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25°C) Figure 6. Typical output characteristics (T j = 150°C)I C , C O L L E C T O R C U R R E N T3V4V 5V 6V 7V 8V 9V 10V 11V0A 10A 20A 30A 40A 50A 60A 70A80A V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E-50°C0°C 50°C 100°C 150°C0V1V2V3V4V5V6VV GE , GATE -EMITTER VOLTAGET j , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristics (V CE = 20V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N G T I M E S0A 20A 40A 60A10ns100ns1000nst , S W I T C H I N G T I M E S0Ω10Ω20Ω30Ω40Ω50Ω10ns100ns1000nsI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as a function of collector current (inductive load, T j = 150°C,V CE = 800V, V GE = +15V/0V, R G = 22Ω, dynamic test circuit in Fig.E ) Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150°C,V CE = 800V, V GE = +15V/0V, I C = 25A, dynamic test circuit in Fig.E )t , S W I T C H I N G T I M E S-50°C0°C 50°C 100°C 150°C10ns100ns1000nsV G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A GE-50°C0°C 50°C 100°C 150°C0V1V2V3V4V5V6VT j , JUNCTION TEMPERATURET j , JUNCTION TEMPERATUREFigure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 800V,V GE = +15V/0V, I C = 25A, R G = 22Ω, dynamic test circuit in Fig.E )Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.3mA)E , S W I T C H I N G E N E R G Y L O S S E S0A 20A 40A 60A0mJ5mJ10mJ15mJ20mJ 25mJE ,S W I T C H I N G E N E R G Y L O S S E S0Ω10Ω20Ω30Ω40Ω50Ω0mJ2mJ4mJ6mJ8mJ10mJI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150°C,V CE = 800V, V GE = +15V/0V, R G= 22Ω, dynamic test circuit in Fig.E ) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150°C,V CE = 800V, V GE = +15V/0V, I C = 25A, dynamic test circuit in Fig.E )E , S W I T C H I N G E N E R G Y L O S S E S-50°C0°C 50°C 100°C 150°C0mJ 2mJ4mJ6mJ8mJZ t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E1µs10µs100µs1ms10ms 100ms1s10-3K/W10-2K/W 10-1K/WT j , JUNCTION TEMPERATUREt p , PULSE WIDTHFigure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 800V,V GE = +15V/0V, I C = 25A, R G = 22Ω, dynamic test circuit in Fig.E )Figure 16. IGBT transient thermalimpedance as a function of pulse width (D = t p / T )V G E , G A T E -E M I T T E R V O LT A G E0nC100nC 200nC 300nC0V5V10V15V20VC , C A P A C I T A N C E0V10V20V30V100pF1nFQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge (I C = 25A) Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz)t s c , S H O R T C I R C U I T W I T H S T A N D T I M E10V11V12V13V14V15V0µs 5µs10µs15µs20µs25µs30µsI C (s c ), S H O R T C I R C U I T C O L L E C T O RC U R R E N T10V12V 14V 16V 18V 20V0A 100A200A300A400A500AV GE , GATE -EMITTER VOLTAGEV GE , GATE -EMITTER VOLTAGEFigure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 1200V, start at T j = 25°C) Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤V CE ≤1200V, T C = 25°C, T j ≤ 150°C)t r r , R E V E R S E R E C O V E R Y T I M E300A/µs500A/µs 700A/µs 900A/µs0ns100ns200ns300ns400ns 500nsQ r r , R E V E R S E R E C O V E R Y C H A R G E300A/µs500A/µs 700A/µs 900A/µs0µC1µC2µC3µC4µC5µCdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 21. Typical reverse recovery time as a function of diode current slope (V R = 800V, T j = 150°C,dynamic test circuit in Fig.E ) Figure 22. Typical reverse recovery charge as a function of diode current slope (V R = 800V, T j = 150°C,dynamic test circuit in Fig.E )I r r , R E V E R S E R E C O V E R Y C U R R E N T300A/µs500A/µs 700A/µs 900A/µs0A10A20A30A40A50Ad i r r /d t , D I O D E P E A K R A T E O F F A L L O F R E V E R S E R E C O V E R Y C U R R E N T300A/µs500A/µs 700A/µs 900A/µs0A/µs100A/µs200A/µs300A/µs400A/µsdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 23. Typical reverse recovery current as a function of diode current slope (V R = 800V, T j = 150°C,dynamic test circuit in Fig.E )Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R = 800V, T j = 150°C,dynamic test circuit in Fig.E )I F , F O R W A R D C U R RE N T0V1V 2V 3V 4V0A20A40A60A80AV F , F O R W A R D V O L T A G E0°C40°C 80°C120°C0.0V0.5V1.0V1.5V2.0V2.5V3.0VV F , FORWARD VOLTAGET j , JUNCTION TEMPERATUREFigure 25. Typical diode forward current as a function of forward voltage Figure 26. Typical diode forward voltage as a function of junction temperatureZ t h J C D , T R A N S I E N T T H E R M A L I M P E D A N C E10µs100µs 1ms 10ms 100ms 1s10-2K/W10-1K/W 100K/Wt p , PULSE WIDTHFigure 27. Diode transient thermalimpedance as a function of pulse width (D = t p / T )PG-TO247-3-21Figure A. Definition of switching timesIr r m90% Ir r m10% Ir r mdi/dtFtr rIFi,vtQSQFtStFVRdi/dtr rQ=Q Qr r S F+t=t tr r S F+Figure C. Definition of diodesswitching characteristicsτ1τ2nτr r rFigure D. Thermal equivalentFigure B. Definition of switching losses Figure E. Dynamic test circuitLeakage inductance Lσ=180nH,and stray capacity Cσ =40pF.Edition 2006-01Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 5/10/06.All Rights Reserved.Attention please!The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). 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