MSM51257CLL中文资料

The MK1705A generates a low EMI output clock from a clock or crystal input. The part is designed to dither the LCD interface clock or other clocks for ATI’s flat panel graphics controllers. Thedevice uses ICS/MicroClock’s proprietary mixture of analog and digital Phase-Locked Loop (PLL) technology to synthesize the frequency, and our patented technique to spread the frequency spectrum of the output, thereby reducing the frequency amplitude peaks by several dB.The MK1705A is designed to have the output spread centered around the input frequency. Refer to the MK1704A for spreading down from the input frequency, or the MK1714-0x for a crystal input and the widest selection of spread rates and multipliers.We offer many other clocks for computers and computer peripherals. Consult us when you need to remove crystals and oscillators from your board.Block DiagramDescriptionFeatures• Packaged in 8 pin SOIC• Provides a spread spectrum output clock • Supports ATI’s flat panel controllers• Accepts a clock input, provides same frequency dithered output• Good for all VGA modes from 40 to 167 MHz • Peak reduction by 7dB - 14 dB typical on 3rd- 19th odd harmonics• Low EMI feature can be disabled • 3.3 V or 5 V ±10% supply voltage • Advanced, low power CMOS processClock OutLow EMI Enable Power DownPin AssignmentICLK S0GNDVDD LEE8 pin SOICCLKS1External ComponentsA minimum number of external components are required for proper operation. A decoupling capacitor of 0.01µF should be connected between VDD and GND on pins 2 and 3 as close to the chip as possible, and a 33Ω series terminating resistor may be used on the clock output if the trace is longer than 1 inch.Pin DescriptionsKey: I = Input, O = output, P = power supply connectionNotes:1. Stresses beyond those listed under Absolute Maximum Ratings could cause permanent damage to the device. Prolonged exposure to levels above the operating limits but below the Absolute Maximums may affect device reliability.2. Typical values are at 25°C.Electrical SpecificationsWhile the information presented herein has been checked for both accuracy and reliability, ICS MicroClock assumes no responsibility for either its use or for the infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normalcommercial applications. Any other applications such as those requiring extended temperature range, high reliability, or other extraordinary environmental requirements are not recommended without additional processing by ICS MicroClock. ICS MicroClock reserves the right to change any circuitry or specifications without notice. ICS MicroClock does not authorize or warrant any ICS MicroClock product for use in life support devices or critical medical instruments.Ordering InformationPackage Outline and Package Dimensions(For current dimensional specifications, see JEDEC Publication No. 95.)。

Semiconductor 1524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROMDESCRIPTIONFEATURESPin compatible OTP availablePackages:42-PIN PLASTIC DIP 44-PIN PLASTIC SOP 44-PIN PLASTIC TSOP Internal powerdown function Tri-State output configurations Input/Output TTL compatible Access time50ns Max (Page access)524,288-words x 16-bit / 1,048,576-Bytes x 8-bitSingle 5.0V power supplyThe OKI MSM538052E is a 524,288-words x 16-bit or 1,048,576-Bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 8 words x 16-bit or 16 words x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The chip's asynchronous I/O requires no external clock assuring easy operation. A power-down mode provides low power dissipation when the chip is not selected. The CE and OE pins are provided as control signals that permit three-stated output allowing easy memory expansion on a system bus.The MSM538052E is suited for use as large capacity fixed memory for microcomputers and data terminals.MSM538052E8-words(A2,A1,A0) or 16-Bytes(A2,A1,A0,A-1) / Page (DIP42-P-600-2.54)(SOP44-P-600-1.27-K)(TSOP44-P-400-0.80-1K)(MSM538052E-xxRS)(MSM538052E-xxGS-K)(MSM538052E-xxTS-AK)1998.10MSM538052E2PIN CONFIGURATIONMSM538052EBLOCK DIAGRAMV CC V SS3MSM538052E4RECOMMENDED OPERATING CONDITIONSABSOLUTE MAXIMUM LIMITSDC CHARACTERISTICSOperating Temperature Storage TemperaturePower Supply Voltage Input Voltage Output Voltage Power Dissipation ParameterSymbol Unit Limits Conditions V V V W –0.3 to 7–0.3 to V CC + 0.5–0.3 to V CC + 0.50 to 70–55 to 1501.0°C °CPer Package T opr = 25°Cto V SST opr T stgV CCV I V O P D ——Power Supply Voltage "H" Input Voltage "L" Input Voltage ParameterSymbol Unit 5.5Typ.4.5ConditionsMin.Max.5.0V 0.00.00.0V 2.2 5.0V 0.80.0V Operating Temperature70Limits—————–0.3—°CV CC V SS V IH V IL T opr"H" Output Voltage "L" Output Voltage ParameterSymbol Unit Typ.2.4Conditions Min.Max.Power Supply Current (Operating)V 0.4V 10µA 80mA 50µA 500µAInput Leakage Current Output Leakage Current Power Supply Current (Standby)10µA Limits(V CC = 5V±10%, Ta = 0 to 70°C)I OH = –400µA I OH = 2.1mA –10–10————————————CE = V CC –0.2V CE = V IH MINV I = 0 to V CC V O = 0 to V CC CE = V IH MINCE = V IL, OE = V IH, t C = 100nsV OH I LI I LO I CC I CCSI CCS 1V OL 5.5MSM538052E5AC CHARACTERISTICS Test conditionsParameterConditionsInput Signal Level Transtion Time Timing Reference Level Load ConditionV IH =3.0V, V IL =0.0V t r =t f =5nsInput Voltage=1.5VOutput Voltage=0.8V&2.0V CL=100pF+1TTLRead Cycle(Ta = 0 to 70°C)MSM538052E6Read Cycle (Note2)I/O CAPACITANCEInput Capacitance Output CapacitanceParameterSymbol C I Unit 8Typ.Conditions Min.Max.C OpF 10Rated Value pFV I =0V V O =0V————SemiconductorNOTICEThe information contained herein can change without notice owing to product and/or technical im-provements. Before using the product, please make sure that the information being referred to is up-to-date.The outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. When planning to use the product, please ensure that the external conditions are reflected in the actual circuit, assembly, and program designs.When designing your product, please use our product below the specified maximum ratings and within the specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating temperature.Oki assumes no responsibility or liability whatsoever for any failure or unusual or unexpected opera-tion resulting from misuse, neglect, improper installation, repair, alteration or accident, improper han-dling, or unusual physical or electrical stress including, but not limited to, exposure to parameters be-yond the specified maximum ratings or operation outside the specified operating range.Neither indemnity against nor license of a third party’s industrial and intellectual property right, etc. is granted by us in connection with the use of the product and/or the information and drawings contained herein. No responsibility is assumed by us for any infringement of a third party’s right which may result from the use thereof.The products listed in this document are intended for use in general electronics equipment for commer-cial applications (e.g., office automation, communication equipment, measurement equipment, consumer electronics, etc.). These products are not authorized for use in any system orapplication th at requires special or enhanced quality and reliability characteristics nor in any system or application where the failure of such system or application may result in the loss or damage of property, or death or injury to humans. Such applications include, but are not limited to,traffic and automotive equipment, safety de-vices, aerospace equipment, nuclear power control, medical equipment, and life-support systems. Certain products in this document may need government approval before they can be exported to par-ticular countries. The purchaser assumes the responsibility of determining the legality of export of these products and will take appropriate and necessary steps at their own expense for these.No part of the contents cotained herein may be reprinted or reproduced without our prior permission. All brand, company and product names are the trademarks or registered trademarks of their respective owners.Copyright 1998 Oki Electric Industry Co., Ltd.Marketing Communications Team (RB)Page 1ADDRESSES & SEMICONDUCTOR WEB SITESOKI Electric Industry Co., Ltd.OKI Electric Industry Co., Ltd.,Device Business Group,10-3, Shibaura, 4-chome,Minato-ku, Tokyo 108, Japan,Tel.: +81-(0)3-5445-6327,Fax.: +81-(0)3-5445-6328,http://www.oki.co.jp/semi/OKI Semiconductor Group OKI Semiconductor Group,785 North Mary Avenue,Sunnyvale, CA 94086, U.S.A.,Tel.: +1-408-720-1900,Fax.: +1-408-720-1918,/OKI Electric Europe GmbH OKI Electric Europe GmbH,Head Office Europe,Hellersbergstrasse 2,D-41460 Neuss, Germany,Tel: +49-2131-15960,Fax: +49-2131-103539,http://www.oki-europe.de/OKI Electronics (Hong Kong) Ltd.OKI Electronics (Hong Kong) Ltd.,Suite 1901-1&19, Tower 3,China Hong Kong City,33 Canton Road, Tsimshatsui,Kowloon, Hong Kong,Tel.: +852-2-736-2336,Fax.: +852-2-736-2395OKI Semiconductor (Asia) Pte. Ltd.OKI Semiconductor (Asia) Pte. Ltd.,78 Shenton Way 09-01,Singapore 0207,Tel.: +65-221-3722,Fax.: +65-323-5376OKI Semiconductor (Asia) Pte. Ltd.OKI Semiconductor (Asia) Pte. Ltd.,Taipei Branch,7th Fl. No.260, Tun Hwa North Road,Taipei, Taiwan, R.O.C.,Sumitomo-Flysun Building,Tel.: +886-2-2719-2561,Fax.: +886-2-2715-2892.tw/。

1. 将写码器的 DOUT+接解码板的 DMX512 输入 D+，DOUT-接解码板的 DMX512 输 入 D-。此步骤是为了让写码器输出信号连接到解码板。 2. 将写码器的 DIN+接解码板的 DMX512 输出 D+， DIN-接解码板的 DMX512 输出 D-。 此步骤是为了让写码器能接收到解码板的输出信号。 3. 如果解码板没有 LED 需要驱动，可以有写码器供电给解码板。将写码器的 GND 连 接到解码板电源输入低端，VIN+连接到解码板的电源输入高端。 连接完毕后，开启解码器的电源。就可以进入正常使用。在生产过程中，以上连线可以 由治具顶针来完成。 上电后，写码器在有电源供应后，将持续 动态查询连接的解码板地址信息并及时
按住“功能键”5 秒钟
地址操作
“ 自动编码 ” 选项，按 “确认”键；或者无按 键超过 15 秒钟
设置操作
2.4 地址操作 2.4.1 按键说明
【功能】键：在此界面中，短时间按下功能键然后放开，将目前显示内容锁定 4 秒钟， 以方便用户看清显示内容。 如在 b208 显示时， 按下并释放功能键， 当前解码板的地址值 208 将持续显示 4 秒钟，即显示 b208。然后继续交替显示。 在地址操作模式时，常按功能键超过 5 秒，将切换到设置操作。 【上翻】键：在此界面中，短时间按下下翻键，写码器目标地址值将向下递减，到达最 小值后，转换为最大值，即循环变化；如果保持按住按键的状态超过 3 秒钟，写码器目标地 址值将加速循环递减；如果保持按键按住状态超过 5 秒钟，将以更快的速度循环递减。如此 操作方法，方便用户快速设定 0-512 目标地址值。 【下翻】键：在此界面中，短时间按下上翻键，写码器目标地址值将向上递增，到达最 大值后，转换为最小值，即循环变化；如果保持按住按键的状态超过 3 秒钟，写码器目标地 址值将加速循环递加；如果保持按键按住状态超过 5 秒钟，将以更快的速度循环递加。如此 操作方法，方便用户快速设定 0-512 目标地址值。 【确认】键：在此界面中，如果按下并确认键，写码器将发送一次指令，将目前写码器 目标地址写入解码板。写码是否成功，可由后续查看解码板地址来检查。 自动写码说明 本写码器还支持自动写码功能。即写码器能将连接的解码板地址，不需要手动操作，就

1/11NOT FOR NEW DESIGNNovember 2000This is information on a product still in production but not recommended for new designs.M27512NMOS 512 Kbit (64Kb x 8) UV EPROMs FAST ACCESS TIME: 200nss EXTENDED TEMPERATURE RANGE s SINGLE 5V SUPPLY VOLTAGE s LOW STANDBY CURRENT: 40mA max sTTL COMPATIBLE DURING READ and PROGRAMs FAST PROGRAMMING ALGORITHM s ELECTRONIC SIGNATURE sPROGRAMMING VOLTAGE: 12VDESCRIPTIONThe M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits.The M27512 is housed in a 28 Pin Window Ce-ramic Frit-Seal Dual-in-Line package. The trans-parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pat-tern can then be written to the device by following the programming procedure.Figure 1. Logic DiagramAI00765B16Q0-Q7V CCM27512GV PPV SS8A0-A15E 128FDIP28W (F)Figure 2. DIP Pin Connections permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.Table 2. Absolute Maximum RatingsDEVICE OPERATIONThe six modes of operations of the M27512 are listed in the Operating Modes table. A single 5V power supply is required in the read mode. All inputs are TTL levels except for GV PP and 12V on A9 for Electronic Signature.Read ModeThe M27512 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection.Output Enable (G) is the output control and should be used to gate data to the output pins, inde-pendent of device selection. Assuming that the addresses are stable, address access time (t AVQV )is equal to the delay from E to output (t ELQV ). Data is available at the outputs after delay of t GLQV from the falling edge of G, assuming that E has been low and the addresses have been stable for at least t AVQV -t GLQV .Standby ModeThe M27512 has a standby mode which reduces the maximum active power current from 125mA to 40mA. The M27512 is placed in the standby mode by applying a TTL high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the GV PP input.Two Line Output ControlBecause EPROMs are usually used in larger mem-ory arrays, the product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows :a. the lowest possible memory power dissipation,b. complete assurance that output bus contention will not occur.M275122/11For the most efficient use of these two control lines,E should be decoded and used as the primary device selecting function, while GV PP should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all dese-lected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular mem-ory device.System ConsiderationsThe power switching characteristics of fast EPROMs require careful decoupling of the devices.The supply current, I CC , has three segments that are of interest to the system designer : the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be sup-pressed by complying with the two line output control and by properly selected decoupling ca-pacitors. It is recommenced that a 1µF ceramic capacitor be used on every device between V CC and V SS . This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be used between V CC and V SS for every eight devices. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.ProgrammingWhen delivered, and after each erasure, all bits of the M27512 are in the “1" state. Data is introduced by selectively programming ”0s" into the desired bit locations. Although only “0s” will be programmed,both “1s” and “0s” can be present in the data word.The only way to change a “0" to a ”1" is by ultraviolet light erasure. The M27512 is in the programming mode when GV PP input is at 12.5V and E is at TTL-low. The data to be programmed is applied 8bits in parallel to the data output pins. The levels required for the address and data inputs are TTL.The M27512 can use PRESTO Programming Algo-rithm that drastically reduces the programming time (typically less than 50 seconds). Nevertheless to achieve compatibility with all programming equipment, the standard Fast Programming Algo-rithm may also be used.Fast Programming AlgorithmFast Programming Algorithm rapidly programs M27512 EPROMs using an efficient and reliable method suited to the production programming en-vironment. Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. A flowchart of the M27512 Fast Programming Algorithm is shown in Figure 8.Note: X = V IH or V IL , V ID = 12V ± 0.5%.Table 3. Operating ModesTable 4. Electronic SignatureDEVICE OPERATION (cont’d)M275123/11Figure 3. AC Testing Input Output WaveformsInput Rise and Fall Times ≤ 20ns Input Pulse Voltages0.45V to 2.4V Input and Output Timing Ref. Voltages0.8V to 2.0VAC MEASUREMENT CONDITIONSFigure 4. AC Testing Load CircuitNote that Output Hi-Z is defined as the point where datais no longer driven.Note: 1.Sampled only, not 100% tested.Table 5. Capacitance (1) (T A = 25 °C, f = 1 MHz )Figure 5. Read Mode AC WaveformsM275124/11Notes:1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .2.Sampled only, not 100% tested.Table 7. Read Mode AC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC)Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .Table 6. Read Mode DC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC )CC PP PP Table 8. Programming Mode DC Characteristics (1)(T A = 25 °C; V CC = 6.25V ± 0.25V; V PP = 12.75V ± 0.25V)M275125/11Notes. 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .2. The Initial Program Pulse width tolerance is 1 ms ± 5%.3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.4. Sampled only, not 100% tested.Table 10. Programming Mode AC Characteristics (1)(T A = 25 °C; V CC = 6.25V ± 0.25V; V PP = 12.75V ±0.25V)CC PP PP Table 9. MARGIN MODE AC Characteristics (1)(T A = 25 °C; V CC = 6.25V ± 0.25V; V PP = 12.75V ± 0.25V)M275126/11M27512 Figure 6. MARGIN MODE AC WaveformFigure 7. Programming and Verify Modes AC Waveforms7/11Figure 8. Fast Programming FlowchartFigure 9. PRESTO Programming FlowchartDEVICE OPERATION (cont’d)The Fast Programming Algorithm utilizes two differ-ent pulse types : initial and overprogram. The du-ration of the initial E pulse(s) is 1ms, which will then be followed by a longer overprogram pulse of length 3ms by n (n is an iteration counter and is equal to the number of the initial one millisecond pulses applied to a particular M27512 location), before a correct verify occurs. Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied.The entire sequence of program pulses is per-formed at V CC = 6V and GV PP = 12.5V (byte verifi-cations at V CC = 6V and GV PP = V IL ). When the Fast Programming cycle has been completed, all bytes should be compared to the original data with V CC = 5V.PRESTO Programming AlgorithmPRESTO Programming Algorithm allows to pro-gram the whole array with a guaranted margin, in a typical time of less than 50 seconds (to be com-pared with 283 seconds for the Fast algorithm).This can be achieved with the STMicroelectronics M27512 due to several design innovations de-scribed in the next paragraph that improves pro-gramming efficiency and brings adequate marginfor reliability. Before starting the programming the internal MARGIN MODE circuit is set in order to guarantee that each cell is programmed with enough margin.Then a sequence of 500µs program pulses are applied to each byte until a correct verify occurs.No overprogram pulses are applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell.Program InhibitProgramming of multiple M27512s in parallel with different data is also easily accomplished. Except PP ) of the parallel M27512 may be common. A TTL low level pulse applied to a M27512’s E input, with GV pp at 12.5V,will program that M27512. A high level E input inhibits the other M27512s from being pro-grammed.Program VerifyA verify (read) should be performed on the pro-grammed bits to determine that they were correctly programmed. The verify is accomplished with GV pp IL . Data should be verified t DV after the falling edge of E.M275128/11Electronic SignatureThe Electronic Signature mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm.This mode is functional in the 25 °C ± 5 °C ambient temperature range that is required when program-ming the M27512. To activate this mode, the pro-gramming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from V IL to V IH . All other address lines must be held at V IL during Electronic Signature mode, except for A14 and A15 which should be high. Byte 0 (A0 = V IL ) represents the manufacturer code and byte 1 (A0 = V IH ) the device identifier code.ERASURE OPERATION (applies to UV EPROM)The erasure characteristic of the M27512 is such that erasure begins when the cells are exposed tolight with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27512 in about 3 years, while it would take approximately 1 week to cause erasure when expose to direct sunlight. If the M27512 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27512 window to prevent unintentional erasure. The recommended erasure procedure for the M27512 is exposure to short wave ultraviolet light which has wavelength 2537 Å.The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15W-sec/cm 2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 µW/cm 2 power rating. The M27512 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be re-moved before erasure.-2200 ns, 5V ±5% blank 250 ns, 5V ±5% -3300 ns, 5V ±5% -20200 ns, 5V ±10%-25250 ns, 5V ±10%FFDIP28W10 to 70 °C 6–40 to 85 °CORDERING INFORMATION SCHEMEFor a list of available options (Speed, V CC Tolerance, Package, etc) refer to the current Memory Shortform catalogue.For further inform ation o n any aspect of this device, please cont act STMicroelectronics Sales Office nearest to you.M275129/11M27512Drawing is not to scale 10/11元器件交易网M27512 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2000 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.11/11。