富士IPM智能模块6MBP100RA120

IGBT -IPM R series1200V / 100A 6 in one-package6MBP100RA120Features· Temperature protection provided by directly detecting the junction temperature of the IGBTs· Low power loss and soft switching· High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts inbuilt-in control circuitMaximum ratings and characteristicsAbsolute maximum ratings (at Tc=25°C unless otherwise specified)Symbol Rating UnitMin. Max.DC bus voltageDC bus voltage (surge)DC bus voltage (short operating)Collector-Emitter voltageINV Collector current DC 1msDCCollector power dissipation One transistor Junction temperatureInput voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperatureOperating case temperatureIsolating voltage (Case-T erminal)Screw torque Mounting (M5) T erminal (M5)V DCV DC(surge)V SC V CES I C I CP -I C P C T jV CC *1V in *2I inV ALM *3I ALM *4T stg T opV iso *5Item0 0200 0 - - - - - 0 0 - 0 - -40 -20 - - - 9001000 8001200 100 200 100 735 150 20 Vz 1 Vcc 15 125 100AC2.53.5 *63.5 *6V V V V A A A W °C V V mA V mA °C °C kV N·m N·m*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.*3 Apply V ALM between terminal No. 16 and 10.*4 Apply I ALM to terminal No. 16.*5 50Hz/60Hz sine wave 1 minute.*6 Recommendable Value : 2.5 to 3.0 N·mElectrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)Item Symbol Condtion Min. Typ. Max. UnitINV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD I CESV CE(sat)V FV CE =1200V input terminal open Ic=100A -Ic=100A – – 1.0 mA – – 2.6 V – – 3.0 V Fig.1 Measurement of case temperature6MBP100RA120IGBT -IPMItem Symbol Min. Typ. Max. Unit DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) T erminal (M5)V DC 200 - 800 V V CC 13.5 15 16.5 V f SW 1 - 20 kHz - 2.5 - 3.0 N·m - 2.5 - 3.0 N·mRecommendable value76MBP100RA120IGBT-IPMBlock diagramOutline drawings, mmMass : 920gPre-drivers include following functions a) Amplifier for driver b) Short circuit protectionc) Undervoltage lockout circuit d) Over current protectione) IGBT chip over heating protection6MBP100RA120IGBT-IPMCharacteristics (Representative)Control Circuit102030405060700510152025Po wer supp ly current vs. S w itching fre quencyTj=100°CP o w e r s u p p l y c u r r e n t : I c c (m A )S witching frequenc y : fsw (k Hz)0.511.522.512131415161718Inpu t signal thresho ld voltage vs. P ow er sup ply voltageI n p u t s i g n a l t h r e s h o l d v o lt a g eP ow e r s up p ly voltag e : V cc (V )Tj=25°C Tj=125°C: V i n (o n ),V i n (o f f ) (V)246810121420406080100120140U nde r volta ge vs. Ju nctio n tem pe ra tureU n d e r v o l t a g e : V U V T (V )Ju nction tem pe rature : Tj (°C)00.20.40.60.81U nd er vo ltage hysteris is vs. Jnc tion tem p eratureU n d e r v o l t a g e h y s t e r i s i s : V H (V )Junction tem perature : T j (°C )0.511.522.5312131415161718A larm ho ld tim e vs. Po w e r supply vo ltageA l a r m h o l d t i m e : t AL M (m S e c )P o w e r s u p p ly vo lta g e : V c c (V )05010015020012131415161718O ve r he atin g ch ara cteris tics Tc O H ,T jO H ,T cH ,T jH vs. V c cO v e r h e a t i n g p r o t e c t i o n : T c O H,T j O H (°C )P ow e r s up p ly voltag e : V cc (V)O H h y s t e r i s i s : T c H ,T j H (°C )6MBP100RA120IGBT-IPMInverter02040608010012014016000.51 1.52 2.53C ollec tor current vs. C ollector-E m itte r voltageC o l l e c t o r C u r r e n t : I c (A )Collector-Em itter voltage : Vce (V)02040608010012014016000.511.522.53C ollector current vs. C ollector-Em itter voltageC o l l e c t o r C u r r e n t : I c (A )C olle ctor-E m itter volta ge : V ce (V )1010010001000020406080100120140160S w itch in g tim e vs. C o lle cto r cu rre n tE d c =600V ,V cc =15V ,T j=25°CS w i t c h i n g t i m e : t o n ,t o f f ,t f (n S e c )C o lle cto r cu rre nt :Ic (A )10100100010000020406080100120140160Sw itching tim e vs. C ollector current Edc=600V ,V cc=15V ,Tj=125°CS w i t c h i n g t i m e : t o n ,t o f f ,t f (n S e c )C o llecto r cu rrent : Ic (A )02040608010012014016000.511.522.53Forw ard current vs. Forward voltageF o r w a r d C u r r e n t : I f (A )Fo rw ard vo ltage : V f (V )020406080100120140160Reverse recovery characteristicsR e v e r s e r e c o v e r y c u r r e n t : I r r (A )R e v e r s e r e c o v e r y t i m e : t r r (n S e c )Forward current : IF(A)6MBP100RA120IGBT -IPM0.010.110.0010.010.11T ran s ien t th erm a l res istan ceT h e r m a l r e s i s t a n c e : R t h (j -c ) (°C /W )P u lse w id th :P w (s e c )2004006008001000120014000200400600800100012001400R e ve rs e d b ia s e d s afe o p e ra tin g a re aC o l l e c t o r c u r r e n t : I c (A )C ollector-E m itte r v olta ge : V ce (V )<010020030040050060070080020406080100120140160P ow e r derating for IG BT(per device)C o l l e c t e r P o w e rD i s s i p a t i o n : P c (W )C a se T em p erature : Tc (°C)050100150200250300350020406080100120140160Pow er derating for F W D(per device)C o l l e c t e r P o w e rD i s s i p a t i o n : P c (W )C ase T em perature : Tc (°C )0510152025303540020406080100120140160S w itch in g L o ss vs. C o lle cto r C u rre n tE d c=600V ,V cc=15V ,T j=25°CS w i t c h i n g l o s s : E o n ,E o f f ,E r r (m J /c y c l e )C ollec to r c urre nt : Ic (A)0510152025303540020406080100120140160S w itchin g Lo ss vs. C o llector C u rre ntE d c=600V ,V cc=15V ,T j=125°CS w i t c h i n g l o s s : E o n ,E o f f ,E r r (m J /c y c l e )C ollec to r c u rre n t : Ic (A )6MBP100RA120IGBT-IPM050100150200250300350400020406080100120140O ver current protection vs. Junction tem peratureV cc=15VO v e r c u r r e n t p r o t e c t i o n l e v e l : I o c (A )Ju nction tem peratu re : Tj(°C )。