HAT2045T中文资料

BSH105
TYP. MAX. UNIT 0.57 140 180 240 270 1.6 10 50 1.3 3.9 0.4 1.4 2 4.5 45 20 152 71 33 200 250 300 375 100 100 10 V V V mΩ mΩ mΩ mΩ S nA nA µA nC nC nC ns ns ns ns pF pF pF
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
• Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
BSH105
VGS = 4.5 V
4.5
5
Fig.3. Safe operating area. Ta = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
/
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 10 µA VDS = VGS; ID = 1 mA Tj = 150˚C VGS = 4.5 V; ID = 0.6 A VGS = 2.5 V; ID = 0.6 A VGS = 1.8 V; ID = 0.3 A VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C Forward transconductance VDS = 16 V; ID = 0.6 A Gate source leakage current VGS = ±8 V; VDS = 0 V Zero gate voltage drain VDS = 16 V; VGS = 0 V; current Tj = 150˚C Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Input capacitance Output capacitance Feedback capacitance ID = 1 A; VDD = 20 V; VGS = 4.5 V MIN. 20 0.4 0.1 0.5 -

ITSM(A) 80 70 60 50 40 30 20 10
0 1
Tj initial=25°C F=50Hz
Number of cycles
10
100
1000
Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
Symbol
Test Conditions
Quadrant
IGT VGT VGD IL IH * VTM * IDRM IRRM
VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ IG=1.2 IGT IT= 100mA gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated
0
0
1
2
3
4
5
6
7
8
Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact.
260
Unit A A
A2s A/µs
°C °C °C
Symbol
Parameter
VDRM VRRM
Repetitive peak off-state voltage Tj = 125 °C

2 of 8
QW-R113-008,A
元器件交易网
ULN2004
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
DIP-16
*Pb-free plating product number: ULN2004L
ORDERING INFORMATION
Order Number
Normal
Lead free plating
ULN2004-S16-R
ULN2004L-S16-R
ULN2004-S16-T
ULN2004L-S16-T
INPUT CONDITION
TYPE NUMBER
R1
VIH
ULN2004
0
8V
Note3: CL includes probe and jig capacitance
UNISONIC TECHNOLOGIES CO., LTD

5 of 8
QW-R113-008,A
OPEN
LINEAR INTEGRATED CIRCUIT
VF
IF
OPEN 8. tON, tOFF
INPUT
PULSE GENERATOR
(Note 1)
Note 2
OPEN
VOUT
RL OUTPUT
CL=15pF (Note 3)
INPUT OUTPUT
tr
tf
VIH
90
90
50
50
10
元器件交易网
UNISONIC TECHNOLOGIES CO., LTD

FeaturesAvailable in Adjust VersionSpace Saving TO-252 Package and TO-263 PackageInternal Short Circuit Current Limiting Internal Over Temperature ProtectionOutput Current 3AApplicationsPost Regulation for Switching DC/DC Con-verterHigh Efficiency Linear Regulator Battery ChargerBattery Powered InstrumentationMotherboardGeneral DescriptionThe G1085 is a low dropout linear regulator with a dropout of 1.2V at 3A of load current. It is avail-able in an adjustable version, which can set the output from 1.25V to 5V with only two external resistors.The G1085 provides over temperature and over current protection circuits to prevent it from being damaged by abnormal operating conditions. The G1085 is available in TO-252 package and TO- 263 packages. A minimum of 100µF tantalum electrolytic capacitor is required at the output to improve the transient response and stability.Ordering InformationPIN OPTIONORDER NUMBERORDER NUMBER(Pb free)MARKINGTEMP. RANGEPACKAGE1 2 3G1085T43U G1085T43Uf G1085 -40°C to +85°C TO-252 GND/ADJ V OUT V IN G1085T53U G1085T53UfG1085-40°C to +85°CTO-263GND/ADJV OUTV IN* For other package types and pin options, please contact us at sales @Order Number IdentificationType Pin Option TypePart NumberPACKAGE TYPE PIN OPTION PACKINGT4: TO-252 12 3 U & D: Tape & Reel Direction T5: TO-263 3: GND/ADJ V OUT V IN T: TubePackage Type Typical Application [Note 4]: Type of C OUTV V OUT123TO-252、TO-263Input Voltage…………………………….………………7V Power Dissipation Internally Limited (Note 2) Maximum Junction Temperature…...……………….150°C Storage Temperature Range…..…-65°C ≤ T J ≤+150°CReflow Temperature (soldering, 10sec)…………260°C Thermal Resistance Junction to AmbientTO-252(1)………………………………….………125°C/W TO-263(1)………………………………….………100°C/W Thermal Resistance Junction to CaseTO-252………….………………..………..….……10°C/W TO-263…..………………………...……..…………6°C/W ESD Rating (Human Body Model)……......................2kVNote (1): See Recommended Minimum Footprint(V IN -V ADJ ) Voltage………..…………...………..2.5V~5.5V Temperature Range……………..….….-40°C ≤ T A ≤85°C Electrical CharacteristicsOperating Conditions: V IN ≤ 7V, T A =T J = 25°C unless otherwise specified. [Note3]PARAMETER CONDITION MIN TYP MAX UNITReference Voltage V IN - V OUT = 2V, I OUT = 10mA1.2251.2501.275VLine Regulation(V OUT + 1.5V) < V IN < 7V, I OUT = 10mA --- 0.5 1 % Load Regulation (V IN - V OUT ) = 2V, 10mA < I OUT <3A --- 0.04 0.5 % Dropout Voltage ∆V OUT = 2%, I OUT = 3A --- 1.3 1.4 V Current Limit(V IN - V OUT ) = 2V---5.4---AAdjust Pin Current Change V IN - V OUT = 2V, 10mA < I OUT < 3A --- 0.15 --- µA Minimum Load Current 1.5V < (V IN - V OUT ) < 5.25V 10 --- --- mA Quiescent Current V IN - V OUT = 2V---80150µARipple Rejection f = 120Hz, C OUT = 10µF Tantalum,(V IN - V OUT ) = 3V, I OUT = 1A--- 48 --- dBTemperature StabilityV IN = 4V, I O =10mA --- 0.3 --- %RMS Output Noise (% of V OUT ) T A = 25°C, 10Hz < f < 10kHz, I LOAD = 10mA --- 0.007 --- %Thermal Shutdown Junction Temperature --- 150 --- °CThermal Shutdown Hysteresis--- 30 --- °CNote 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Con-ditions are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and test conditions see the Electrical Characteristics.Note 2: The maximum power dissipation is a function of the maximum junction temperature, T Jmax ; total thermal re-sistance, θJA , and ambient temperature T A . The maximum allowable power dissipation at any ambient tem-perature is T jmax -T A / θJA . If this dissipation is exceeded, the die temperature will rise above 150°C and ICwill go into thermal shutdown.Note3: Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.Note4: The type of output capacitor should be tantalum or aluminum.Output VoltageThe G1085 provides an adjustable output voltage from 1.25V to 5V. with two external resistors. It can be for-mulated as:R2 V OUT = 1.25V x (1+R1) + IADJx R2I ADJ = 80µA (TYP)Dropout VoltageThe input/output Voltage differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 2% below its nominal value. Dropout voltage is affected by junction temperature, load cur-rent and minimum input supply requirements. Line RegulationThe change in output voltage for a change in input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that average chip temperature is not significantly af-fected.Load RegulationThe change in output voltage for a change in load current at constant chip temperature. The measure-ment is made under conditions of low dissipation or by using pulse techniques such that average chip tem-perature is not significantly affected.Maximum Power DissipationThe maximum total device dissipation for which the regulator will operate within specifications.Quiescent Bias CurrentCurrent which is used to operate the regulator chip and is not delivered to the load.(V IN -V OUT =3V, V OUT =1.25V, C IN =100µF, C OUT =100µF, T A =25°C, unless otherwise noted.)I L =100mALine Transient ResponseLoad Transient ResponseOutput NoiseShort Circuit-CurrentDropout Voltage vs. I OUTLoad RegulationOutput Voltage vs. TemperatureAdj Pin Current vs. TemperatureG1085T43(TO-252) Max. PowerDissipation vs. PCB Top CopperG1085T43(TO-252) Max. Power Dissipation vs. T AMB (still air)Recommend Minimum FootprintG1085T53(TO-263) Max. Power Dissipation vs. PCB Top Copper Area T = 25°C ; Still AirG1085T53(TO-263) Max. Power Dissipation vs. TAMB (still air)TO-252 (T4) PackageDIMENSION IN MILLIMETER DIMENSION IN INCHSYMBOLMIN. MAX. MIN. MAX.A 2.19 2.38 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.64 0.89 0.025 0.035 C 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245E 6.35 6.73 0.250 0.265 E1 5.21 5.46 0.2050.215 e 2.26 BSC 0.09 BSC e1 3.96 5.18 0.156 0.204 F 0.46 0.58 0.018 0.023 L1 0.89 2.03 0.035 0.080 L2 0.64 1.02 0.025 0.040 L3 2.40 2.80 0.095 0.110 H 9.40 10.40 0.370 0.410 θ 0° 4° 0° 4°TO-263 (T5) PackageMILLIMETER INCH SYMBOLMIN MAX MIN MAXA 4.30 4.70 0.169 0.185 A1 1.22 1.32 0.048 0.055 A2 2.45 2.69 0.104 0.106 b 0.69 0.94 0.027 0.037 b1 1.22 1.40 0.048 0.055 C 0.36 0.56 0.014 0.022 D 8.64 9.652 0.340 0.380 E 9.7010.54 0.382 0.415 e 2.29 2.79 0.090 0.110 e1 4.83 5.33 0.190 0.210 H 14.60 15.78 0.575 0.625 L 4.70 5.84 0.185 0.230 L1 1.20 1.778 0.047 0.070 L2 2.24 2.84 0.088 0.111 L3 1.40MAX 0.055MAXPackage OrientationPACKAGE Q’TY/REELTO-252 2,500 ea TO-263 1,000 eaGMT Inc. does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and GMT Inc. reserves the right at any time without notice to change said circuitry and specifications.TO-252 Package OrientationTO-263 Package OrientationFeed DirectionFeed Direction。