35363-0860;中文规格书,Datasheet资料

DS30052 Rev. 5 - 21of 3GBU10005 - ãDiodes IncorporatedGBU10005 - GBU101010A GLASSPASSIVATEDBRIDGE RECTIFIERFeaturesMaximum Ratings and Electrical Characteristics

@ TA= 25°C unless otherwise specifiedMechanical Data

Single phase, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.

Notes:1. Unit mounted on 100 x 100 x 1.6mm copper plateheatsink.2. Non-repetitive, for t > 1.0ms and < 8.3ms.3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.4.RoHSrevision 13.2.2003. Glass and High temperature Solder Exemptions Applied, seeEU Directive Annex Notes 5 and 7.·Case:GBU·Case Material: Molded Plastic.ULFlammabilityClassification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C·Terminals: Finish¾Bright Tin.SolderableperMIL-STD-202, Method 208·Polarity: Marked on Body·Mounting: Through Hole for #6 Screw·Mounting Torque: 5.0 Inch-pounds Maximum·Ordering Information: See Last Page·Marking: Date Code and Type Number·Weight: 6.6 grams (approximate)CharacteristicSymbolGBU10005GBU1001GBU1002GBU1004GBU1006GBU1008GBU1010UnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR501002004006008001000VRMS Reverse VoltageVR(RMS)3570140280420560700VAverage Forward Rectified Current (Note 1)@ TC= 100°CI(AV)10ANon-Repetitive Peak Forward Surge Current8.3ms single half sine-wave superimposed on rated load(JEDECMethod)IFSM

Pomona®

All dimensions are in inches. Tolerances (except noted): .xx = ±.02” (,51 mm), .xxx = ± .005” (,127 mm). All specifications are to the latest revisions. Specifications are subject to change without notice. Registered trademarks are the property of their respective companies. Made in USA 6/9/99 PomonaACCESS 90847 (800) 444-6785 or (425) 446-6010 SY/EH/LS More drawings available at S:\Engineering\Release\DataSheets\FlukeDataSheet\d4653_1_01.doc Page 1 of 1

Model 4653 Miniature Triple Banana Plug

Sales: 800-490-2361 Fax: 888-403-3360 Technical Assistance: 800-241-2060 FEATURES: • Use for balanced line 2 conductor shielded cable assemblies MATERIALS: Upper Connector: Miniature Triple Banana Jack – Brass, H.H. per QQ-B-626, Alloy 360 Finish: Gold plated per MIL-G-45204, Type II (.00001 min.) Insulation: ABS per L-P-1183, Type II, molded to banana plug bodies Color: Black and Red Marking: POMONA ELECTRONICS, CALIF. 4653 Lower Connector: Miniature Triple Banana Plug Spring: Beryllium Copper, Berylco 25 per QQ-C-533 Plug Body: Brass, H.H., per QQ-B-626, Alloy 360 Finish: Gold Plated per MIL-G-45204, Type II, (.00001 min.) RATINGS: Operating Temperature: +50°C (+122°F) Max. Operating Voltage: 2500 VDC Current: 5 Amperes ORDERING INFORMATION: Model 4653-*

Features

1 of 6

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBTGaAs MESFET

SiGe BiCMOSSi BiCMOSSiGe HBTGaAs pHEMTSi CMOSSi BJTGaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@.RF MEMSSHF-0289(Z)

0.05GHz to 6GHz, 1.0WATT GaAs HFET

RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)housed in a low-cost surface-mount plastic package. The HFET technology improvesbreakdown voltage while minimizing Schottky leakage current resulting in higherPAE and improved linearity. Output power at 1dB compression for the SHF-0289 is+30dBm when biased for Class AB operation at 7V, 200mA. The +43dBm thirdorder intercept makes it ideal for high dynamic range, high intercept point require-ments. It is well suited for use in both analog and digital wireless communicationinfrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless,and pager systems.

DMG4435SSS Document number: DS32041 Rev. 2 - 2 1 of 6 March 2010© Diodes Incorporated

DMG4435SSS

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data

• Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Marking Information: See Page 5 • Ordering Information: See Page 5 • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V