ff300r17ke3_2_0
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesFF 300 R17 KE3
vorläufige Datenpreliminary dataHöchstzulässige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannungcollector-emitter voltageTvj = 25°CVCES1700V
Kollektor-DauergleichstromTC = 80 °CIC,nom.300A
DC-collector currentTC = 25 °CI
C535A
Periodischer Kollektor Spitzenstromrepetitive peak collctor currenttP = 1 ms, TC = 80°CICRM600A
Gesamt-Verlustleistungtotal power dissipationTC=25°C, TransistorPtot1470W
Gate-Emitter-Spitzenspannunggate-emitter peak voltageVGES +/- 20VV
DauergleichstromDC forward currentIF300A
Periodischer Spitzenstromrepetitive peak forw. currenttp = 1 msIFRM600A
Grenzlastintegral der DiodeI2t - value, DiodeVR = 0V, tp = 10ms, TVj = 125°CI
2t13,5k A2
s
Isolations-Prüfspannunginsulation test voltageRMS, f = 50 Hz, t = 1 min.VISOL3,4kV
Charakteristische Werte / Characteristic valuesTransistor / Transistormin.typ.max.
Kollektor-Emitter SättigungsspannungIC = 300A, VGE = 15V, Tvj = 25°C VCE sat-2,02,45V
collector-emitter saturation voltageI
C = 300A, VGE = 15V, Tvj = 125°C
-2,4 - V
Gate-Schwellenspannunggate threshold voltageIC = 12mA, VCE = VGE, Tvj = 25°CVGE(th)5,25,86,4V
Gateladunggate chargeVGE = -15V ... +15VQG -3,4 - µC
Eingangskapazitätinput capacitancef = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0VCies-25-nF
Rückwirkungskapazitätreverse transfer capacitancef = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0VCres - 0,9 - nF
Kollektor-Emitter Reststromcollector-emitter cut-off currentVCE = 1700V, VGE = 0V, Tvj = 25°C ICES- -5mA
Gate-Emitter Reststromgate-emitter leakage currentVCE = 0V, VGE = 20V, Tvj = 25°C IGES--400nA
prepared by: Alfons Wiesenthaldate of publication: 2002-07-15approved by: Christoph Lübkerevision: 2.0
1/8DB_FF300R17KE3_2.0.xlsTechnische Information / Technical InformationIGBT-ModuleIGBT-ModulesFF 300 R17 KE3
vorläufige Datenpreliminary dataCharakteristische Werte / Characteristic valuesTransistor / Transistormin.typ.max.
Einschaltverzögerungszeit (ind. Last)IC = 300A, VCE = 900V
turn on delay time (inductive load)V
GE = ±15V, RG= 4,7W, Tvj = 25°Ctd,on-0,28-µs
VGE = ±15V, RG = 4,7W, Tvj = 125°C
-0,33-µs
Anstiegszeit (induktive Last)IC = 300A, VCE = 900V
rise time (inductive load)VGE = ±15V, RG= 4,7W, Tvj = 25°Ct
r-0,10-µs
VGE = ±15V, RG = 4,7W, Tvj = 125°C
-0,10-µs
Abschaltverzögerungszeit (ind. Last)IC = 300A, VCE = 900V
turn off delay time (inductive load)VGE = ±15V, RG= 4,7W, Tvj = 25°Ct
d,off-0,85-µs
VGE = ±15V, RG = 4,7W, Tvj = 125°C-1,00-µs
Fallzeit (induktive Last)IC = 300A, VCE = 900V
fall time (inductive load)VGE = ±15V, RG= 4,7W, Tvj = 25°Ct
f-0,12-µs
VGE = ±15V, RG = 4,7W, Tvj = 125°C-0,20-µs
Einschaltverlustenergie pro PulsIC = 300A, VCE = 900V, VGE = ±15V
turn-on energy loss per pulseRG= 4,7W, Tvj = 125°C, Ls= 80nHE
on-115-mJ
Abschaltverlustenergie pro PulsIC = 300A, VCE = 900V, VGE = ±15V
turn-off energy loss per pulseRG= 4,7W, Tvj = 125°C, Ls= 80nHE
off-95-mJ
KurzschlußverhaltentP£ 10µsec, VGE£ 15V
SC DataTVj£125°C, VCC=1000V, VCEmax=VCES-LsCE ·dI/dtI
SC-1100-A
Modulinduktivitätstray inductance moduleAnschlüsse / terminals: 2 - 3LsCE - 20 - nH
Modulleitungswiderstand, Anschlüsse - Chipmodule lead resistance, terminals - chipTC=25°C, pro Zweig / per armRCC´+EE´ - 0,60 - mW
Charakteristische Werte / Characteristic valuesDiode / Diodemin.typ.max.DurchlaßspannungIF = 300A, VGE = 0V, Tvj = 25°CVF-1,82,2V
forward voltageI
F = 300A, VGE = 0V, Tvj = 125°C
-1,9-V
RückstromspitzeIF = 300A, - diF/dt = 3500A/µspeak reverse recovery currentVR = 900V, VGE = -15V, Tvj = 25°CI
RM-330-A
VR = 900V, VGE = -15V, Tvj = 125°C
-350-A
SperrverzögerungsladungIF = 300A, - diF/dt = 3500A/µs
recovered chargeVR = 900V, VGE = -15V, Tvj = 25°CQ
r-75-µC
VR = 900V, VGE = -15V, Tvj = 125°C
-125-µC
Abschaltenergie pro PulsIF = 300A, - diF/dt = 3500A/µs
reverse recovery energyVR = 900V, VGE = -15V, Tvj = 25°CE
rec-35-mJ
VR = 900V, VGE = -15V, Tvj = 125°C-70-mJ
2/8DB_FF300R17KE3_2.0.xls