MPS5172RLRMG;MPS5172;MPS5172G;MPS5172RLRM;中文规格书,Datasheet资料
- 格式：pdf
- 大小：119.58 KB
- 文档页数：7
© Semiconductor Components Industries, LLC, 2005December, 2005 − Rev. 21Publication Order Number:MPS5172/DMPS5172General Purpose TransistorNPN SiliconFeatures•Pb−Free Packages are Available*
MAXIMUM RATINGSRatingSymbolValueUnitCollector−Emitter VoltageVCEO25VdcCollector−Base VoltageVCBO25VdcEmitter−Base VoltageVEBO5.0VdcCollector Current − ContinuousIC
100mAdcTotal Device Dissipation @ TA = 25°CDerate above 25°CPD6255.0mWmW/°CTotal Power Dissipation @ TA = 60°CPD450mWTotal Device Dissipation @ TC = 25°CDerate above 25°CPD1.5
12WmW/°COperating and Storage JunctionTemperature RangeTJ, Tstg−55 to +150°CTHERMAL CHARACTERISTICSCharacteristicSymbolMaxUnitThermal Resistance, Junction−to−AmbientRqJA200°C/WThermal Resistance, Junction−to−CaseRqJC83.3°C/WMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normaloperating conditions) and are not valid simultaneously. If these limits are exceeded,device functional operation is not implied, damage may occur and reliability maybe affected.
*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting Techniques ReferenceManual, SOLDERRM/D.http://onsemi.com
TO−92 (TO−226)CASE 29STYLE 1MARKING DIAGRAM
MPS5172= Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb−Free PackageMPS5172AYWWGG
(Note: Microdot may be in either location)COLLECTOR32BASE1EMITTER
312
DevicePackageShippingORDERING INFORMATIONMPS5172TO−925000 / Bulk
MPS5172RLRMGTO−92(Pb−Free)2000/Ammo PackMPS5172RLRMTO−922000/Ammo PackMPS5172GTO−92(Pb−Free)5000 / Bulk
http://oneic.com/MPS5172
http://onsemi.com2ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 1)(IC = 10 mA, IB = 0)V(BR)CEO25−VdcCollector Cutoff Current(VCE = 25 V, IB = 0)ICES−100nAdcCollector Cutoff Current(VCB = 25 V, IE = 0)(VCB = 25 V, IE = 0, TA = 100°C)ICBO−−10010nAdcmAdcEmitter Cutoff Current(VEB = 5.0 V, IC = 0)IEBO−100nAdcON CHARACTERISTICS (Note 1)DC Current Gain(VCE = 10 V, IC = 10 mA)hFE100500−Collector−Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)VCE(sat)−0.25VdcBase−Emitter On Voltage(IC = 10 mAdc, VCE = 10 V)VBE(on)0.51.25VdcSMALL−SIGNAL CHARACTERISTICSCollector−Base Capacitance(VCB = 10 V, f = 1.0 MHz)Ccb1.610pFSmall−Signal Current Gain(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hfe100750−1.Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
http://oneic.com/MPS5172
http://onsemi.com3TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current GainIC, COLLECTOR CURRENT (mA)400
0.004h , DC CURRENT GAIN
FETJ = 125°C
−55°C25°C
VCE = 1.0 VVCE = 10 V40600.0060.010.020.030.050.070.10.20.30.50.71.02.03.05.07.01020305070100200
10080
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)1.4Figure 3. Collector Characteristics
IC, COLLECTOR CURRENT (mA)V, VOLTAGE (VOLTS)
1.02.05.01020501.6
100TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10VBE(on) @ VCE = 1.0 V*qVC for VCE(sat)
qVB for VBE0.10.20.5Figure 4. “On” VoltagesIB, BASE CURRENT (mA)0.40.60.81.0
0.20VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.002TJ = 25°C
IC = 1.0 mA10 mA100 mA
Figure 5. Temperature Coefficients50 mA
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)406080100
2000IC, COLLECTOR CURRENT (mA)TA = 25°CPULSE WIDTH = 300 msDUTY CYCLE ≤ 2.0%IB = 500 mA400 mA300 mA200 mA100 mA
*APPLIES for IC/IB ≤ hFE/225°C to 125°C−55°C to 25°C25°C to 125°C−55°C to 25°C0.0050.010.020.050.10.20.51.02.05.010205.010152025303540
1.21.00.80.60.40.20−2.40.80
−1.6−0.8
1.02.05.01020501000.10.20.5V, TEMPERATURE COEFFICIENTS (mV/C)°
θ
http://oneic.com/MPS5172
http://onsemi.com4TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 6. Current−Gain − Bandwidth ProductIC, COLLECTOR CURRENT (mA)Figure 7. CapacitanceVR, REVERSE VOLTAGE (VOLTS)500
0.510
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T5070100200300
0.71.02.03.05.07.010203050TJ = 25°Cf = 100 MHzVCE = 20 V5.0 V
1.02.03.05.07.0
0.10.20.51.02.05.0102050
0.05TJ = 25°Cf = 1.0 MHzCibCob
http://oneic.com/MPS5172
http://onsemi.com5Figure 8. Thermal Responset, TIME (ms)1.0
0.01r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.010.020.030.050.070.10.20.30.50.7
0.020.050.10.20.51.02.05.01020501002005001.0k2.0k5.0k10k20k50k100kD = 0.50.20.10.050.020.01SINGLE PULSEDUTY CYCLE, D = t1/t2D CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1 (SEE AN−569)ZqJA(t) = r(t) •RqJATJ(pk) − TA = P(pk) ZqJA(t)t1t2P(pk)FIGURE 9
Figure 10.TJ, JUNCTION TEMPERATURE (°C)104
−40IC, COLLECTOR CURRENT (nA)
Figure 11. VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)400
2.0IC, COLLECTOR CURRENT (mA)DESIGN NOTE: USE OF THERMAL RESPONSE DATAA train of periodical power pulses can be represented bythe model as shown in Figure 9. Using the model and the de-vice thermal response the normalized effective transientthermal resistance of Figure 8 was calculated for variousduty cycles.To find ZqJA(t), multiply the value obtained from Figure8 by the steady state value RqJA.Example:The MPS3904 is dissipating 2.0 watts peak under the follow-ing conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, thereading of r(t) is 0.22.The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.For more information, see ON Semiconductor Applica-tion Note AN569/D, available from the Literature Distribu-tion Center or on our website at www.onsemi.com.The safe operating area curves indicate IC−VCE limitsof the transistor that must be observed for reliable operation.Collector load lines for specific circuits must fall below thelimits indicated by the applicable curve.The data of Figure 11 is based upon TJ(pk) = 150°C; TC orTA is variable depending upon conditions. Pulse curves arevalid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)may be calculated from the data in Figure 8. At high case orambient temperatures, thermal limitations will reduce thepower that can be handled to values less than the limitationsimposed by second breakdown.10−210−1100101102103
