CP-V413WT;中文规格书,Datasheet资料

RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.•Typical Two-Tone Performance @ 1960 MHz, 28 Volts, I DQ = 50 mA, P out = 4 Watts PEP Power Gain — 18 dB Drain Efficiency — 33%IMD — -34 dBc•Typical Two-Tone Performance @ 900 MHz, 28 Volts, I DQ = 50 mA, P out = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33%IMD — -39 dBc•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features•Characterized with Series Equivalent Large-Signal Impedance Parameters •On-Chip RF Feedback for Broadband Stability •Integrated ESD Protection •RoHS Compliant•In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +68Vdc Gate-Source Voltage V GS -0.5, +12Vdc Storage Temperature Range T stg -65 to +150°C Operating Junction TemperatureT J150°CTable 2. Thermal CharacteristicsCharacteristicSymbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 76°C, 4 W PEP , Two-Tone Case Temperature 79°C, 4 W CWR θJC8.88.5°C/WTable 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1C (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)IV (Minimum)1.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.Document Number: MW6S004NRev. 4, 6/2009Freescale Semiconductor Technical DataMW6S004NT1Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T A = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——500nAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 50 mAdc)V GS(th) 1.22 2.7Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 50 mAdc)V GS(Q)— 2.7—Vdc Fixture Gate Quiescent Voltage (1)(V DD = 28 Vdc, I D = 50 mAdc, Measured in Functional Test)V GG(Q) 2.23 4.2Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 50 mAdc)V DS(on)—0.270.37VdcDynamic CharacteristicsReverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss —21—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —25—pF Input Capacitance(V DS = 28 Vdc, V GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)C iss—30—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEP , f1 = 1960 MHz, f2 = 1960.1 MHz, Two-Tone Test Power Gain G ps 16.51820dB Drain EfficiencyηD 2833—%Intermodulation Distortion IMD —-34-28dBc Input Return LossIRL—-12-10dBTypical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEP , f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G ps —19—dB Drain EfficiencyηD —33—%Intermodulation Distortion IMD —-39—dBc Input Return LossIRL—-12—dB1.V GG = 11/10 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit Schematic.MW6S004NT1Figure 1. MW6S004NT1 Test Circuit SchematicZ70.210″ x 1.220″ Microstrip Z80.054″ x 0.680″ Microstrip Z90.054″ x 0.260″ Microstrip Z100.025″ x 0.930″ MicrostripPCBArlon CuClad 250GX-0300-55-22, 0.020″, εr = 2.5Z10.054″ x 0.430″ Microstrip Z20.054″ x 0.137″ Microstrip Z30.580″ x 0.420″ Microstrip Z40.580″ x 0.100″ Microstrip Z50.025″ x 0.680″ Microstrip Z60.210″ x 0.100″ MicrostripV SUPPLYTable 6. MW6S004NT1 Test Circuit Component Designations and ValuesPartDescriptionPart Number Manufacturer C1100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C3, C6, C79.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C4, C510 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C810 μF, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet R1 1 k Ω, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R210 k Ω, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R310 Ω, 1/4 W Chip ResistorCRCW120610R0FKEAVishayMW6S004NT1Figure 2. MW6S004NT1 Test Circuit Component LayoutMW6S004NT1TYPICAL CHARACTERISTICS1420191716G p s , P O W E R G A I N (d B )100.1TWO−TONE SPACING (MHz)1100Figure 6. Intermodulation Distortion Productsversus Tone Spacing 26P in , INPUT POWER (dBm)1618222414Figure 7. Pulsed CW Output Power versusInput PowerI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )181520MW6S004NT1TYPICAL CHARACTERISTICSA C P R (dB )−70P out , OUTPUT POWER (WATTS) AVG.50−2040−3030−4020−5010−600.01110Figure 8. Single-Carrier CDMA ACPR, Power Gainand Drain Efficiency versus Output PowerP out , OUTPUT POWER (WATTS) CWFigure 10. Power Gain versus Output Power 7151906171618234G p s , P O W E R G A I N (d B )1800−250f, FREQUENCY (MHz)Figure 11. Broadband Frequency Response−5−10−15−20210020502000195019001850S 11 (d B )851ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )0.118.517.516.515.5MW6S004NT1TYPICAL CHARACTERISTICS25010790T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF versus Junction TemperatureThis above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 4 W PEP, and ηD = 33%.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.106105104110130150170190M T T F (H O U R S )210230MW6S004NT1f = 1930 MHzZ o = 10 ΩZ loadZ sourcef = 1990 MHzf = 1930 MHzf = 1990 MHzV DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEPfMHzZ sourceWZ loadW1930 1.96 - j5.348.78 + j6.961960 1.89 - j5.108.93 + j7.461990 1.82 - j4.859.11 + j7.97Z source=Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured fromdrain to ground.Z source Z loadOutputMatchingNetworkFigure 13. Series Equivalent Source and Load ImpedanceMW6S004NT1Table 7. Common Source Scattering Parameters (V DD = 28 V, 50 ohm system)I DQ = 50 mAf MH S 11S 21S 12S 22MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ5000.649-116.3407.902105.4200.056-73.7500.548-33.5705500.695-121.6807.50298.7900.053-80.5700.593-41.4806000.733-126.5607.11192.3800.049-87.0100.632-48.8906500.770-131.340 6.69986.2900.045-93.2800.669-56.0007000.800-135.740 6.30280.4500.041-99.1200.701-62.8107500.827-140.030 5.92274.8500.038-104.8500.727-69.2908000.848-143.950 5.55269.6300.035-110.1100.750-75.3508500.866-147.690 5.22064.5800.032-115.2200.770-81.1309000.882-151.140 4.89159.9700.029-119.9600.786-86.5709500.895-154.560 4.59755.4900.026-124.7900.800-91.73010000.907-157.590 4.31551.2400.024-129.0900.813-96.66010500.916-160.540 4.06047.1700.022-133.3700.824-101.34011000.923-163.310 3.81943.3400.020-137.4600.833-105.79011500.929-165.930 3.60139.6500.018-141.4400.840-110.05012000.935-168.430 3.39836.1100.017-145.3300.847-114.17012500.938-170.770 3.21032.7400.015-149.5400.851-118.06013000.942-173.030 3.03629.4900.014-153.4300.856-121.88013500.945-175.140 2.87526.3600.013-157.4600.859-125.52014000.948-177.170 2.72823.3300.012-161.9100.863-129.02014500.951-179.090 2.59020.4400.011-166.1800.866-132.39015000.953179.030 2.46417.6400.010-170.6300.869-135.65015500.954177.270 2.34714.9200.009-174.8900.872-138.76016000.955175.570 2.24012.3200.008179.9500.875-141.75016500.956173.980 2.1399.7400.008173.9200.877-144.65017000.957172.350 2.0477.2500.007167.7100.880-147.48017500.957170.800 1.958 4.8100.007161.8100.882-150.18018000.958169.340 1.879 2.4400.006155.3700.884-152.76018500.959167.920 1.8060.2600.006148.9400.886-155.23019000.959166.510 1.736-1.9800.005142.6300.887-157.58019500.960165.200 1.668-4.3100.005136.7400.888-160.05020000.959163.800 1.611-6.2400.005129.9100.890-162.07020500.959162.420 1.555-8.2900.005123.8100.891-164.19021000.958161.170 1.504-10.2700.005118.2000.892-166.14021500.958159.840 1.456-12.2100.005112.7400.893-168.06022000.957158.560 1.412-14.1300.005108.4600.894-169.84022500.957157.160 1.372-16.0100.005103.8400.896-171.61023000.955155.870 1.334-17.8700.00599.3100.896-173.26023500.954154.510 1.300-19.7000.00595.3600.897-174.83024000.953153.120 1.268-21.5100.00591.0300.898-176.39024500.953151.7301.238-23.2500.00587.4600.899-177.840MW6S004NT1Table 7. Common Source Scattering Parameters (V DD = 28 V, 50 ohm system) (continued)I DQ = 50 mAf MH S 11S 21S 12S 22MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ25000.952150.340 1.211-25.1200.00684.1600.899-179.27025500.950149.010 1.187-26.9200.00680.7800.897179.42026000.949147.380 1.166-28.6500.00677.8800.897178.12026500.948145.920 1.144-30.4200.00774.6700.898176.84027000.944144.200 1.121-32.3100.00771.3600.896175.48027500.944142.790 1.105-34.2300.00767.9800.897174.06028000.943141.020 1.088-36.0000.00763.9500.897172.93028500.941139.410 1.073-37.8700.00761.2300.896171.63029000.940137.640 1.058-39.7600.00859.8100.896170.33029500.938135.900 1.045-41.6800.00858.2800.896169.04030000.937133.8601.032-43.6100.00856.7400.895167.510分销商库存信息: FREESCALEMW6S004NT1。

Fea t ure•Ceramic surface mount package •Miniature package to minimize circuitboard area•Hermetically sealed•Qualification per MIL-S-19500/255•Same footprint and pin-out as many SOT-23 package transistorsDe s crip t ionThe JANTX/TXV2N2222AUB is a miniature hermetically sealed ceramic surface mount general purpose switching transistor. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT-23devices have been used. The “UB” suffix denotes the 3 terminal chip carrier package, type “B” per MIL-PRF-19500/255.Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is V CB = 30 V, P D = 200 mW, T A = 25o C, t =80 hrs. Refer to MIL-PRF-19500/255 for completerequirements. In addition, the TX and TXV versions are 100% thermal response tested.When ordering parts without processing,do not use a JAN prefix.Ab s o l ute Maxi m um Rat i ngs (T A = 25o C un l ess oth e r w ise noted)Collector- B ase Volt a ge ............................................. 75 V Collector- E mitter Volt a ge............................................ 50 V Emitter- B ase Volt a ge ............................................... 6.0 Col l ec t or Current- C ontinuous...................................... 800 mA Op e r a t i ng Junc t ion Tem p era t ure (T J )........................ -65o C to +200o C Stor a ge Junc t ion Tem p era t ure (T stg )........................ -65o C to +200o C Power Dis s i p a t ion @ T A = 25o C..................................... 0.3 W Power Dis s i p a t ion @ T C = 25o C .................................. 1.16 W (1)Sol d er i ng Tem p era t ure (va p or phase re f low for 30 sec.)................. 215o C Sol d er i ng Tem p era t ure (heated collet for 5 sec.)...................... 260o CNotes:(1) Der a te line a rly 6.6 mW/o C above 25o C.Prod u ct Bul l e t in JANTX, JANTXV, 2N2222AUB Sep t em b er 1996Surface Mount NPN General Purpose TransistorType JANTX, JANTXV, 2N2222AUBOp t ek Tech n ol o gy, Inc. 1215 W. Crosby Road Car r oll t on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396Types JANTX, JANTXV-2N2222AUBElec t ri c al Char a c t er i s t ics (T A = 25o C un l ess oth e r w ise noted)SYM B OL PA R AME T ER MIN MAX UNITS TEST CON D I T IONOff Char a c t er i s t icsV(BR)CBO Collector-Base Breakdown Voltage75V IC = 10 µA, I E = 0V(BR)CEO Collector-Emitter Breakdown Voltage50V I C = 10 mA, I B = 0V(BR)EBO Emitter-Base Breakdown Voltage 6.0V I E = 10 µA, I C = 0I CBO Collector-Base Cutoff Current10nA V CB = 60 V, I E = 010µA V CB = 60 V, I E = 0, T A = 150o CI EBO Emitter-Base Cutoff Current10nA V EB = 4 V, I C = 0I CES Collector-Emitter Cutoff Current50nA V CE = 50 VOn Char a c t er i s t icsh FE Forward-Current Transfer Ratio50-V CE = 10 V, I C = 0.1 mA75325-V CE = 10 V, I C = 1.0 mA100-V CE = 10 V, I C = 10 mA100300-V CE = 10 V, I C = 150 mA(2)30-V CE = 10 V, I C = 500 mA(2)35-V CE = 10 V, I C = 10 mA, T A = -55o C V CE(SAT)Collector-Emitter Saturation Voltage0.30V I C = 150 mA, I B = 15 mA(2)1.0V I C = 500 mA, I B = 15 mA(2)V BE(SAT)Base-Emitter Saturation Voltage0.60 1.20V I C = 150 mA, I B = 15 mA(2)2.0V I C = 500 mA, I B = 15 mA(2)Small-S ignal Char a c t er i s t icsh fe Small Signal Forward Current Transfer50-V CE = 10 V, I C = 1.0 mA, f = 1.0 kHz Ratio2.5-V CE = 20 V, I C = 20 mA, f = 100 MHzIh fe I Small Signal Forward Current TransferRatioC obo Open Circuit Output Capacitance8.0pF V CB = 10 V, 100 kHz ≤ f ≤ 1.0 MHzC ibo Input Capacitance (Output Open)25pF V EB = 0.5 V, 100 kHz ≤ f ≤ 1.0 MHzSwitch i ng Char a c t er i s t icst on Turn-On Time35ns V CC = 30 V, I C = 150 mA, I B1 = 15 mAt off Turn-Off Time300ns V CC = 30 V, I C = 150 mA, I B1 = I B2 = 15 mA (2) Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%Op t ek Tech n ol o gy, Inc. 1215 W. Crosby Road Car r oll t on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396分销商库存信息: OPTEK-TECHNOLOGY 2N2222AUB。

FEATURES∙ Peak efficiency up to 93.2% at 1.2V∙ Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode ∙ Input voltage (VIN) operating range up to 15V ∙ Output voltage range from 0.25V up to 3.3V ∙ Output current capability of 40A DC ∙ Operation up to 1.0MHz∙ Integrated current sense amplifier ∙ VCC under voltage lockout ∙ Thermal flag∙ Body-Braking® load transient support ∙ Diode-emulation high efficiency mode∙ Compatible with 3.3V PWM logic and VCC tolerant ∙ Compliant with Intel DrMOS V4.0∙ PCB footprint compatible with IR3550 and IR3551 ∙ Efficient dual sided cooling∙ Small 4mm x 6mm x 0.9mm PQFN package ∙ Lead free RoHS compliant packageAPPLICATIONS∙ Voltage Regulators for CPUs, GPUs, and DDR memory arrays ∙ High current, low profile DC-DC convertersDESCRIPTIONThe IR3553 integrated PowIRstage® is a synchronous buck gate driver co-packed with a control MOSFET and a synchronous MOSFET with integrated Schottky diode. It is optimized internally for PCB layout, heat transfer and driver/MOSFET timing. Custom designed gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs.Up to 1.0MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. The IR3553’s superior efficiency enables smallest size and lower solution cost. The IR3553 PCB footprint is compatible with the IR3550 (60A) and the IR3551 (50A).Integrated current sense amplifier achieves superior current sense accuracy and signal to noise ratio vs. best-in-class controller based Inductor DCR sense methods. The IR3553 incorporates the Body- Braking® feature which enables reduction of output capacitors. Synchronous diode emulation mode in the IR3553 removes the zero-current detection burden from the PWM controller and increases system light-load efficiency.The IR3553 is optimized specifically for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server market also makes the IR3553 ideally suited to powering GPU and DDR memory designs and other high current applications.PINOUT DIAGRAMFigure 3: IR3553 Pin Diagram, Top ViewORDERING INFORMATIONTYPICAL APPLICATION DIAGRAMIOUTVCC BBRK#REFINVOUTFigure 4: Application Circuit with Current Sense AmplifierTYPICAL APPLICATION DIAGRAM (CONTINUED)VCC BBRK#VOUTFigure 5: Application Circuit without Current Sense AmplifierFUNCTIONAL BLOCK DIAGRAMPHSFLT#REFINPWM VIN SWSW SW SW SWSW TGND BOOST IOUT VCCBBRK#GATEL CSIN+LGNDPGNDFigure 6: IR3553 Functional Block DiagramPIN DESCRIPTIONSABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied.Note:1. Maximum BOOST – SW = 8V.2. Maximum VIN – SW = 25V.3. All the maximum voltage ratings are referenced to PGND (Pins 12 and 13).Note:1. Thermal Resistance (θJA) is measured with the component mounted on a high effective thermal conductivity test board in free air.Refer to International Rectifier Application Note AN-994 for details.ELECTRICAL SPECIFICATIONSThe electrical characteristics involve the spread of values guaranteed within the recommended operating conditions. Typical values represent the median values, which are related to 25°C.RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGINELECTRICAL CHARACTERISTICSNotes1. Guaranteed by design but not tested in production2.V IN=12V, V OUT=1.2V, ƒSW = 300kHz, L=210nH (0.2mΩ), VCC=6.8V, C IN=47uF x 4, C OUT =470uF x3, 400LFM airflow, no heat sink, 25°Cambient temperature, and 8-layer PCB of 3.7” (L) x 2.6” (W). PWM controller loss and inductor loss are not included.3. V IN=12V, V OUT=1.2V, ƒSW = 400kHz, L=150nH (0.29mΩ), VCC=7V, C IN=47uF x 4, C OUT =470uF x3, no airflow, no heat sink, 25°C ambienttemperature, and 8-layer PCB of 3.7” (L) x 2.6” (W). PWM controller loss and inductor loss are not included.TYPICAL OPERATING CHARACTERISTICSCircuit of Figure 32, V IN =12V, V OUT =1.2V, ƒSW = 400kHz, L=150nH (0.29m Ω), VCC=7V, T AMBIENT = 25°C, no heat sink, no air flow, 8-layer PCB board of 3.7” (L) x 2.6” (W), no PWM controller loss, no inductor loss, unless specified otherwise.TYPICAL OPERATING CHARACTERISTICS (CONTINUED)Circuit of Figure 32, V IN =12V, V OUT =1.2V, ƒSW = 400kHz, L=150nH (0.29m Ω), VCC=7V, T AMBIENT = 25°C, no heat sink, no air flow, 8-layer PCB board of 3.7” (L) x 2.6” (W), no PWM controller loss, no inductor loss, unless specified otherwise.Figure 13: Normalized Power Loss vs. VCC Voltage Figure 14: Power Loss vs. Output Inductor Figure 15: VCC Current vs. Switching FrequencyFigure 16: Switching Waveform, I OUT = 0AFigure 17: Switching Waveform, I OUT = 40AFigure 18: PWM to SW Delays, I OUT = 10APWM 2V/divSW 5V/div40ns/divPWM 5V/divSW 5V/divGATEL 10V/div400ns/divPWM 5V/divSW 5V/divGATEL 10V/div400ns/div分销商库存信息: IRIR3553MTRPBF。