M63826FP中文资料
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Ratings –0.5 ~ +50 500 –0.5 ~ +30 500 50 1.47(P)/1.00(FP)/0.80(GP) –40 ~ +85 –55 ~ +125
Unit V mA V mA V W °C °C
Jan. 2000
元器件交易网
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
CIRCUIT DIAGRAM
COM OUTPUT INPUT 10.5k
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces FUNCTION The M63826P, M63826FP and M63826GP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collectoremitter supply voltage is 50V maximum.The M63826FP and M63826GP is enclosed in molded small flat package, enabling space-saving design.
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current
(Unless otherwise noted, Ta = –40 ~ +85°C)
Conditions Output, H Current per circuit output, L
Jan. 2000
元器件交易网
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics 2.0 500
II = 500µA
Output Saturation Voltage Collector Current Characteristics
Power dissipation Pd(max) (W)
1.5
M63826P
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min — — typ 15 350 max — — Unit ns ns
q q q q q
PIN CONFIGURATION
IN1→ IN2→
1 2 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9
IN3→ 3 INPUT IN4→ 4 IN5→ IN6→ IN7→ GND
5 6 7 8
OUTPUT
→COM COMMON
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage “L” input voltage Duty Cycle P : no more than 8% FP : no more than 5% GP : no more than 4% Duty Cycle P : no more than 30% FP : no more than 20% GP : no more than 15% Parameter Limits min 0 0 typ — — max 50 400 mA 0 5 0 — — — 200 25 0.5 V V Unit V
ICEO = 100µA II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA II = 250µA, IC = 100mA Input current VI = 10V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, I C = 350mA
Collector current Ic (mA)
400
300
1.0
M63826FP 0.744 0.520 0.418
200
Ta = 25°C Ta = 85°C Ta = –40°C
M63826GP
0.5
100
0
0
25
50
75 85
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C) Duty Cycle-Collector Characteristics (M63826P) 500
IC
VIH VIL
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol V (BR) CEO VCE(sat) II VF IR h FE Parameter Collector-emitter breakdown voltage Test conditions Limits min 50 — — — — — — 1000 typ — 1.2 1.0 0.9 0.9 1.4 — 2500 max — 1.6 1.3 1.1 1.4 2.0 100 — Unit V V mA V µA —
3 4 5 6 7
300
2
200
•The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C
1
Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63826P) 500
Collector current Ic (mA)
Collector current Ic (mA)
400
2
400
1
300
16P4(P) 16P2N-A(FP) Package type 16P2S-A(GP)
High breakdown voltage (BVCEO ≥ 50V) High-current driving (IC(max) = 500mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta = –40 to +85°C)
Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board
7.2k 3k
GND
Hale Waihona Puke The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS
NOTE 1 TEST CIRCUIT
INPUT Vo
