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Fabrication of SOI photonic crystal slabs by soft UV-nanoimprint lithography

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FabricationofSOIphotoniccrystalslabsbysoft

UV-nanoimprintlithography

MicheleBelottia,b,*,Je´re´miTorresa,EmmanuelRoya,AnnePe´pina,DarioGeraceb,

LucioC.Andreanib,MatteoGallib,c,YongChena

aLaboratoiredePhotoniqueetdeNanostructures,CentreNationaldelaRechercheScientifique,RoutedeNozay,91460Marcoussis,FrancebDipartimentodiFisica‘‘A.Volta’’,Universita`degliStudidiPavia,ViaBassi6,27100Pavia,ItalycIstitutoNazionalediFisicadellaMateria,ViaBassi6,27100Pavia,Italy

Availableonline25January2006

Abstract

SoftimprintinglithographyassistedbyUVlight(softUV-NIL)takesadvantageofboth,UV-nanoimprintandsoftlithography.Thistechnique,whichcanbeappliedforthereplicationofnanometersizefeaturesoverlargeareas,issuitableforthepatterningofnano-structureslikephotoniccrystalswithhighthroughputandhighaccuracy.Inthiswork,wedemonstratethefabricationoftwodimen-sionalsilicon-on-insulatorphotoniccrystalslabswithandwithoutlinedefectsbyusingsoftUV-NIL.Measurementofphotonicmodedispersionbymeansofvariableanglereflectanceassessesthequalityofthefabricatedsamples.Ó2006PublishedbyElsevierB.V.

Keywords:Photoniccrystals;Nanoimprintlithography;SoftUVlithography

1.Introduction

Photoniccrystals(PhC)areartificialnanostructures

whichcancontrolthepropagationoflightinaveryeffi-

cientway.Aphotoniccrystalisastructuredmaterial

whosedielectricconstantexhibitstranslationsymmetry

withaperiodicityonthewavelengthscale.Periodicallypat-

ternedplanarwaveguides,alsoknownasPhCslabs,are

emergingassomeofthebestperformingstructuresfor

thecontroloflightpropagationinthreedimensions(3D)

[1–4].Thisisachievedbymeansofatwodimensional

(2D)photoniclatticeembeddedinaplanarwaveguide

exploitingthetotalinternalreflectionwithintheslab[5].

LineardefectsinPhCslabsintroducedefectmodesinthe

photonicbandgapandsupportthepropagationoflight

alongthedefectdirection.Acommonsystemisrealised

inatriangularlatticeofholes,byremovingarowofholes

alongtheC-Ksymmetrydirection:wethusobtaintheso-

calledW1defectwaveguide.Inordertoenhancethisbehaviour,highdielectriccontrastbetweencoreandclad-

dingsisrequired.Forthisreasonandalsoforcomplete

compatibilitywithCMOSmaterialsandprocesses,sili-

con-on-insulator(SOI)patternedwaveguidesareidealcan-

didatesinordertorealiseplanarintegratedphotonic

devices.

2.Samplepreparation

Thefabricationofnanoscalediffractiveopticelements

suchasPhCrequireshighlyaccurateandreproduciblenan-

olithographytechniques.Forthesereasons,PhChave

mostlybeenfabricatedviaelectronbeamlithography

(EBL).However,EBLisanexpensivetime-consuming

direct-writingtechnique,whichisnotsuitableformass

production.Incontrast,non-conventionallowcostfabri-

cationmethodssuchasnanoimprintlithographyhave

shownhigh-resolutionandlarge-scaleproductionpotenti-

alities[6–11].

Recently,thehighresolutioncapabilityofUV-imprint

lithographyhasbeendemonstratedbyusingatransparent

stampmadefromhardmaterial,typicallyquartz,onliquid

0167-9317/$-seefrontmatterÓ2006PublishedbyElsevierB.V.

doi:10.1016/j.mee.2005.12.025*Correspondingauthor.Tel.:+39169636125.E-mailaddress:michele.belotti@lpn.cnrs.fr(M.Belotti).www.elsevier.com/locate/meeUV-curablepolymers[12].Thistechniquealsograntsthe

possibilitytoalignopticallythesysteminaneasyway

throughthetransparentmould.Itisalsopossibletouse

astep-and-repeatstrategytocoveralargewaferarea.

Alternatively,one-stepimprintingcanbepossibleovera

largearea,usingasoftstampandsuitableresistconfigura-

tions.Typically,alayerofpolydimethylsiloxane(PDMS),

anelastomeroflowYoung’smodulus,isusedtoobtain

highqualitysoft-stamps,whichconformtolargesurfaces.

However,theresolutionandpatterndefinitionachievable

withasinglelayerPDMSstamparelimitedduetosoft

stampdeformationunderthepressuregradientapplied

onthemold.Lateraldeformationcanmodifythelattice

periodicityofthePhC.Inordertoovercomethisproblem,

wehaveproposedamulti-layerstampconfiguration,which

consistsofarigidtoplayerforpatterning,asoftPDMS

bufferlayerandaglassplatecarrier[13].Therigidimprint-

inglayerofferslocalstiffnesswhiletheelastomericinterme-

diatelayerensureslargeareaconformability.Forthetop

layerwehavechosenpoly(methylmethacrylate)(PMMA)

whichpresentsahighYoung’smodulus(G=5.2GPa).

Tofabricatethetri-layerstamps,wehavedevelopedthe

processpresentedinFig.1.First,themastermoldpatterns

(showninstep1ofFig.1)weredefinedinPMMAresistby

usingastandard50keVelectronbeamlithographysystem.

A20-nm-thickfilmofNiwasdepositedafterresistdevel-

opment.Afterlift-off,patternsweretransferredintosilicon

byanisotropicSF6/CHF3reactiveionetching(RIE)ina

NextralNE110reactor,resultingin200nmfeatureswith

a250-nmetchdepth.Finally,thesurfaceofthefabricated

siliconmoldwastreatedwithtrimethylchlorosilane

(TMCS)bychemicalvapourdeposition(CVD)which

formsaself-assemblingmonolayertopreventadhesion

problems.ThePhCpatternistypicallyatriangulartwo-

合集下载

深紫外光刻光学薄膜

深紫外光刻光学薄膜

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摇摇收稿日期院圆园员源鄄员员鄄圆员曰修订日期院圆园员缘鄄园圆鄄员猿摇摇基金项目院国家科技重大专项资助项目渊晕燥援圆园园怨在载圆园园缘冤文章编号摇圆园怨缘鄄员缘猿员渊圆园员缘冤园圆鄄园员远怨鄄员猿深紫外光刻光学薄膜

张立超鄢袁才玺坤袁时摇光渊中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室袁吉林长春员猿园园猿猿冤

摘要院深紫外波段是目前常规光学技术的短波极限袁随着波长的缩短袁深紫外光学薄膜开发面临一系列特殊的问题曰而对于深紫外光刻系统这样的典型超精密光学系统来说袁对薄膜光学元件提出的要求则更加苛刻遥本文主要介绍了适用于深紫外光刻系统的薄膜材料及膜系设计曰对薄膜沉积工艺尧元件面形保障尧大口径曲面均匀性等超精密光学元件的指标保障关键问题进行了讨论曰对环境污染与激光辐照特性等光刻系统中薄膜元件环境适应性的重要因素进行了深入分析遥以上分析为突破高性能深紫外光刻光学薄膜开发瓶颈袁更好地满足深紫外光刻等极高精度光学系统的应用需求指明了方向遥关摇键摇词院深紫外光刻曰超精密光学曰膜系设计曰光学性能保障曰环境适应性中图分类号院韵源愿源摇摇文献标识码院粤摇摇凿燥蚤院员园援猿苑愿愿辕悦韵援圆园员缘园愿园圆援园员远怨韵责贼蚤糟葬造糟燥葬贼蚤灶早泽枣燥则阅哉灾蕴蚤贼澡燥早则葬责澡赠

在匀粤晕郧蕴蚤鄄糟澡葬燥鄢袁悦粤陨载蚤鄄噪怎灶袁杂匀陨郧怎葬灶早渊杂贼葬贼藻运藻赠蕴葬遭燥则葬贼燥则赠燥枣粤责责造蚤藻凿韵责贼蚤糟泽袁悦澡葬灶早糟澡怎灶陨灶泽贼蚤贼怎贼藻燥枣粤责责造蚤藻凿韵责贼蚤糟泽袁云蚤灶藻酝藻糟澡葬灶蚤糟泽葬灶凿孕澡赠泽蚤糟泽袁悦澡蚤灶藻泽藻粤糟葬凿藻皂赠燥枣杂糟蚤藻灶糟藻泽袁悦澡葬灶早糟澡怎灶员猿园园猿猿袁悦澡蚤灶葬冤鄢悦燥则则藻泽责燥灶凿蚤灶早葬怎贼澡燥则袁耘鄄皂葬蚤造院扎澡葬灶早造糟岳泽噪造葬燥援葬糟援糟灶

Appl.Phys.Lett.89,041902(2006)

Appl.Phys.Lett.89,041902(2006)

Fabricationoftwo-dimensionalcoupledphotoniccrystalresonatorarrays

byholographiclithography

G.Q.Liang,W.D.Mao,Y.Y.Pu,H.Zou,andH.Z.Wanga͒

StateKeyLaboratoryofOptoelectronicMaterialsandTechnologies,Zhongshan(SunYat-sen)University,Guangzhou510275,People’sRepublicofChina

Z.H.ZengInstituteofMacromolecule,Zhongshan(SunYat-sen)University,Guangzhou510275,People’sRepublicofChina

͑Received18April2006;accepted27May2006;publishedonline24July2006͒

Wedemonstratetheholographicdesignandfabricationoftwo-dimensionalcoupledphotoniccrystal

resonatorarrays,whicharecomposedofhexagonalcavitiestiledtogetherinatriangularlattice.

Bandstructureanalysisrevealsthattheinversestructureofthefabricatedtemplatesupports

monopoledefectmodeinaphotonicbandgapofTMpolarization.Ourresultsshowthepractical

importanceofholographiclithographyinthefabricationofphotoniccomponentarrays.©2006

喷雾干燥法制备复合微球

喷雾干燥法制备复合微球

Preparation of PS@SiO2, PS@TiO2，PS@TiO2/SiO2 core-shell composites

by a spray drying process and their hollow spheres after removing PS

cores by calcinations

Ling Li1,a, Hongliang Li1,b,*, Yingchun Zhu2,c,*, Aiping Fu1,d, Yong Wan1,e and Xiu

Song Zhao1,f

1 Laboratory of New Fiber Materials and Modern Textile, The Growing Basis for State Key Laboratory, Qingdao University, Qingdao 266071, China

2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

b lhl@, cyzhu@

Keywords: Hollow spheres, Colloid, SiO2, TiO2, PS spheres, Spray drying.

Abstract. Polystyrene (PS) spheres encapsulated core-shell composites of SiO2 or TiO2 nanoparticles

were prepared by the spray drying technique and hollow spheres of SiO2 or TiO2 nanoparticles were

then derived by removing the PS cores with calcinations. The PS spheres were dispersed into the SiO2

光子晶体

光子晶体

缺陷真的是不完美吗？

——光子晶体的理论计算、制作工艺以及器件应用

（综述报告）

Do defects really mean imperfection?

On theory, fabrication and applications of photonic crystals

（Review）

胡小龙

034698

无研01

摘要

光子晶体材料的介电系数在空间中呈周期分布，这种材料存在光子带隙，引

入缺陷对光有局域效应，为更好地控制光和利用光提供了新的方法。本文综述了

近几年来光子晶体理论和实验方面研究进展，包括：理论计算方法、制作工艺以

及器件应用。

Abstract

The dielectric coefficient of photonic crystals is periodic in space. Photonic

bandgap exits and light can be localized in the defect. The emergence of this new

material provides new methods and possibilities for the control and manipulation of

light. A brief overview of the progress in both theoretical and experimental research in

recent years is presented, including: theoretical computation methods, fabrication and

applications. §1 引言

在刚刚过去的50年里，半导体物理以及相关技术迅猛发展，影响并推动了

整个社会现代化的进程。人们通过控制材料导电特性、改变电子能带实现了各种

各样功能卓越的电子器件。如果能找到合适的材料来改变（tailor）光子能带，那