HCF4069资料

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1/7September 2001sMEDIUM-SPEED OPERATION tPD = 30ns (Typ.) at 10V

sSTANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

sQUIESCENT CURRENT SPECIFIED UP TO 20V

s5V, 10V AND 15V PARAMETRIC RATINGSsINPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C

s100% TESTED FOR QUIESCENT CURRENT sMEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"

DESCRIPTIONThe HCF4069UB is a monolithic integrated circuitfabricated in Metal Oxide Semiconductortechnology available in DIP and SOP packages. The HCF4069UB consists of six COS/MOSinverter circuits. This device is intended for all

general purpose inverter applications where themedium power TTL-drive and logic levelconversion capabilities of circuits such HCF4049BHEX INVERTER/BUFFERS are not required.

HCF4069UBHEX INVERTER

PIN CONNECTIONORDER CODES PACKAGETUBET & RDIPHCF4069UBEYSOPHCF4069UBM1HCF4069UM013TR

DIPSOPHCF4069UB

2/7INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.All voltage values are referred to VSS pin voltage.

RECOMMENDED OPERATING CONDITIONS

PIN NoSYMBOLNAME AND FUNCTION1, 3, 5, 9, 11, 13A, B, C, D, E, FData Inputs

2, 4, 6, 8, 10, 12G, H, I, J, K, LData Outputs

7VSSNegative Supply Voltage

14VDDPositive Supply Voltage

INPUTSOUTPUTSA, B, C, D, E, FG, H, I, J, K, LLHHL

SymbolParameterValueUnitVDDSupply Voltage

-0.5 to +22V

VIDC Input Voltage-0.5 to VDD + 0.5

V

IIDC Input Current

± 10mA

PDPower Dissipation per Package200mW

Power Dissipation per Output Transistor100mWTopOperating Temperature-55 to +125°C

TstgStorage Temperature

-65 to +150°C

SymbolParameterValueUnitVDDSupply Voltage

3 to 20V

VIInput Voltage0 to VDDV

TopOperating Temperature

-55 to 125°CHCF4069UB

3/7DC SPECIFICATIONS

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15VDYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)

(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.

SymbolParameterTest ConditionValueUnitVI(V)VO(V)|IO|(µA)VDD

(V)

TA = 25°C

-40 to 85°C-55 to 125°C

Min.Typ.Max.Min.Max.Min.Max.ILQuiescent Current0/550.010.257.57.5

µA0/10100.010.515150/15150.01130300/20200.025150150VOHHigh Level Output Voltage0/5<154.954.954.95

V0/10<1109.959.959.950/15<11514.9514.9514.95VOLLow Level Output Voltage5/0<150.050.050.05

V10/0<1100.050.050.0515/0<1150.050.050.05VIHHigh Level Input Voltage0.5/4.5<15444

V1/9<1108881.5/13.5<11512.512.512.5VILLow Level Input Voltage4.5/0.5<15111

V9/1<11022213.5/1.5<1152.52.52.5IOHOutput Drive Current0/52.5<15-1.36-3.2-1.15-1.1

mA0/54.6<15-0.44-1-0.36-0.360/109.5<110-1.1-2.6-0.9-0.90/1513.5<115-3.0-6.8-2.4-2.4IOLOutput Sink Current0/50.4<150.4410.360.36

mA0/100.5<1101.12.60.90.90/151.5<1153.06.82.42.4IIInput Leakage

Current0/18Any Input18±10

-5±0.1±1±1µA

CIInput CapacitanceAny Input57.5pF

SymbolParameterTest ConditionValue (*)UnitVDD (V)

Min.Typ.Max.

tPLH tPHLPropagation Delay Time555110

ns103060152550tTLH tTHLOutput Transition Time5100200

ns1050100154080HCF4069UB

4/7TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)RL = 200KΩ

RT = ZOUT of pulse generator (typically 50Ω)

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) HCF4069UB

5/7DIM.mm.inchMIN.TYPMAX.MIN.TYP.MAX.a10.510.020B1.391.650.0550.065b0.50.020b10.250.010D200.787E8.50.335e2.540.100e315.240.600F7.10.280I5.10.201L3.30.130Z1.272.540.0500.100

Plastic DIP-14 MECHANICAL DATA

P001A