HCF4069资料
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1/7September 2001sMEDIUM-SPEED OPERATION tPD = 30ns (Typ.) at 10V
sSTANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
sQUIESCENT CURRENT SPECIFIED UP TO 20V
s5V, 10V AND 15V PARAMETRIC RATINGSsINPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C
s100% TESTED FOR QUIESCENT CURRENT sMEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"
DESCRIPTIONThe HCF4069UB is a monolithic integrated circuitfabricated in Metal Oxide Semiconductortechnology available in DIP and SOP packages. The HCF4069UB consists of six COS/MOSinverter circuits. This device is intended for all
general purpose inverter applications where themedium power TTL-drive and logic levelconversion capabilities of circuits such HCF4049BHEX INVERTER/BUFFERS are not required.
HCF4069UBHEX INVERTER
PIN CONNECTIONORDER CODES PACKAGETUBET & RDIPHCF4069UBEYSOPHCF4069UBM1HCF4069UM013TR
DIPSOPHCF4069UB
2/7INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
PIN NoSYMBOLNAME AND FUNCTION1, 3, 5, 9, 11, 13A, B, C, D, E, FData Inputs
2, 4, 6, 8, 10, 12G, H, I, J, K, LData Outputs
7VSSNegative Supply Voltage
14VDDPositive Supply Voltage
INPUTSOUTPUTSA, B, C, D, E, FG, H, I, J, K, LLHHL
SymbolParameterValueUnitVDDSupply Voltage
-0.5 to +22V
VIDC Input Voltage-0.5 to VDD + 0.5
V
IIDC Input Current
± 10mA
PDPower Dissipation per Package200mW
Power Dissipation per Output Transistor100mWTopOperating Temperature-55 to +125°C
TstgStorage Temperature
-65 to +150°C
SymbolParameterValueUnitVDDSupply Voltage
3 to 20V
VIInput Voltage0 to VDDV
TopOperating Temperature
-55 to 125°CHCF4069UB
3/7DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15VDYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
SymbolParameterTest ConditionValueUnitVI(V)VO(V)|IO|(µA)VDD
(V)
TA = 25°C
-40 to 85°C-55 to 125°C
Min.Typ.Max.Min.Max.Min.Max.ILQuiescent Current0/550.010.257.57.5
µA0/10100.010.515150/15150.01130300/20200.025150150VOHHigh Level Output Voltage0/5<154.954.954.95
V0/10<1109.959.959.950/15<11514.9514.9514.95VOLLow Level Output Voltage5/0<150.050.050.05
V10/0<1100.050.050.0515/0<1150.050.050.05VIHHigh Level Input Voltage0.5/4.5<15444
V1/9<1108881.5/13.5<11512.512.512.5VILLow Level Input Voltage4.5/0.5<15111
V9/1<11022213.5/1.5<1152.52.52.5IOHOutput Drive Current0/52.5<15-1.36-3.2-1.15-1.1
mA0/54.6<15-0.44-1-0.36-0.360/109.5<110-1.1-2.6-0.9-0.90/1513.5<115-3.0-6.8-2.4-2.4IOLOutput Sink Current0/50.4<150.4410.360.36
mA0/100.5<1101.12.60.90.90/151.5<1153.06.82.42.4IIInput Leakage
Current0/18Any Input18±10
-5±0.1±1±1µA
CIInput CapacitanceAny Input57.5pF
SymbolParameterTest ConditionValue (*)UnitVDD (V)
Min.Typ.Max.
tPLH tPHLPropagation Delay Time555110
ns103060152550tTLH tTHLOutput Transition Time5100200
ns1050100154080HCF4069UB
4/7TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) HCF4069UB
5/7DIM.mm.inchMIN.TYPMAX.MIN.TYP.MAX.a10.510.020B1.391.650.0550.065b0.50.020b10.250.010D200.787E8.50.335e2.540.100e315.240.600F7.10.280I5.10.201L3.30.130Z1.272.540.0500.100
Plastic DIP-14 MECHANICAL DATA
P001A