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706458 / 00 01 / 2019重要术语输出功能亮通模式：接收器“看到”光亮，输出端开启。
对射和反射 = NC漫射 = NO暗通模式：接收器“看到”黑暗，输出端开启。
对射和反射 = NO漫射 = NC可编程：亮通或暗通模式之间的选择PNP 输出：正极性输出信号（至 L–）。
NPN 输出：负极性输出信号（至 L+）。
额定绝缘电压AC 装置，视 UB 而定：140 V AC / 250 V ACDC 装置，防护等级 II：250 V ACDC 装置，防护等级 III：60 V DC额定短路电流针对防短路装置：100 A额定脉冲耐压AC 装置，视 UB 而定：140 V AC = 2.5 kV 或 250 V AC = 4 kV（≙ 过压类别 III）DC 装置，防护等级 II：4 kV (≙ 过压类别 III)DC 装置，防护等级 III：60 V DC：0.8 kV (≙ 过压类别 II)通电延时传感器通电后准备工作所需要的时间（一般 < 300 ms）。
工作电压传感器可靠运行的电压范围。
EMC光电传感器满足 EN 60947-5-2 要求，以便●没有影响预期操作内其他设备的噪声级。
●它们对预期操作期间预计出现的电磁干扰不敏感。
裕度接收的光量和切换所需的光量之间的关系。
使用类别AC 装置：AC-140（控制维持电流 < 200 mA 的小电磁负载）DC 装置：DC-13 （电磁控制）精度图表物体和背景之间的最小距离，视范围而定。
背景抑制区别物体和背后反射表面的漫反射传感器光学过程。
迟滞开启点与关闭点之间的偏差。
短路保护最小负载电流维持开关元件导电性的最小工作电流偏振滤光镜仅允许特定平面上的光波穿过（例如：水平波）的极精细滤波器。
产品标准EN 60947-5-2量程发射器和接收器之间（对射）或传感器和棱镜之间（反射）的最大可用距离。
P+F倍加福NJ2-V3-N传感器P+F倍加福NJ2-V3-N传感器上海库存P+F倍加福NJ2-V3-N传感器的特点一、灵敏度较高；二、几何形状具有多方面的适应性，可以制成任意形状的光纤传感器；三、可以制造传感各种不同物理信息（声、磁、温度、旋转等）的器件；四、可以用于高压、电气噪声、高温、腐蚀、或其它的恶劣环境；五、而且具有与光纤遥测技术的内在相容性。
P+F倍加福NJ2-V3-N传感器工作原理,可分为物理传感器和化学传感器二大类传感工作原理的分类物理传感器应用的是物理效应,诸如压电效应,磁数伸结现象,离化、极化、热电、光电、磁电等效应。
被测信号量的微小变化都将转换成电信号化学传感器包括那些以化学吸附、电化学反应等现象为因果关系的传感器,被测信号量的微小变化也将转换成电信号有些传感器既不能划分到物理类,也不能划分为化学类。
大多数传感器是以物理原理为基础运作的。
化学传感器技术问题较多,例如可靠性问题,规模生产的可能性,价格间题等,解决了这类难题,化学传感器的应用将会有巨大增长常见传感器的应用领域和工作原理。
P+F倍加福NJ2-V3-N传感器是一种将被测对象的状态转变为可测的光信号的传感器。
光纤传感器的工作原理是将光源入射的光束经由光纤送入调制器，在调制器内与外界被测参数的相互作用，使光的光学性质如光的强度、波长、频率、相位、偏振态等发生变化，成为被调制的光信号，再经过光纤送入光电器件、经解调器后获得被测参数。
整个过程中，光束经由光纤导入，通过调制器后再射出，其中光纤的作用首先是传输光束，其次是起到光调制器的作用。
上海维特锐专业从事各种国外工控自动化产品的进口贸易。
主要经营品牌如下：德国品牌：费斯托FESTO、贺德克HYDAC、宝德BURKERT、力士乐REXROTH、DUNGS 冬斯、霍科德Kromschroeder、曼肯贝格 Mankenberg、S+B、菲尼克斯PHOENIX、施克SICK、皮尔兹PILZ、易福门IFM、恩德斯豪斯E+H、倍加福P+F、巴鲁夫BALLUFF、穆尔MURR、图尔克TURCK、魏德米勒WEIDMULLER、威卡WIKA、亨士乐HENGSTLER、英飞凌/欧派克INFINEON、久茂JUMO、德国德森克/德硕瑞di-soric、德国杰斯曼GESSMANN、德国KUBLER库伯勒、穆勒MOLLER、施迈赛Schmersal、德国EBM、德国雷沃姆RHEWUM、萨姆森SAMSON、EMG伺服阀 GSR、赫斯曼HIRSCHMAN、HBM、 EUCHNER 安士能、DENISON丹尼逊、Bernstein博恩斯坦、ATP泵等。
Photomicrosensor EE-SX67/47 Photomicrosensor with 50- to 100-mASwitching Capacity that can be Builtinto EquipmentPNP output models newly added.Standard, L-shaped, T-shaped, and Close-mount-ing: Five series of models available.Select from thirty output variations, includingLight-ON or Dark-ON/Light-ON (selectable) mod-els.Response frequency as high as 1 kHz.Easy operation monitoring with bright lightindicator.Wide operating voltage range from 5 to 24 VDC.Models (EE-SX jjj A and EE-SX jjj R) withoperation indicators that are lit when sensingobjects are detected (when light is interrupted) areavailable.T-shapedClose-mountingDetection of Lead Frame PositionEE-SX670Lead frameRatingsNote: 1.The indicator is GaP red LED (peak emission wavelength: 690 nm).2.The response frequency was measured by detecting the following rotating disks.Disk2.1 mmCharacteristicsSensing Position Characteristics (Typical)Dark-ON mode Dark-ON moded Tr ONTr OFFd’Tr ONTr OFFDistance d (mm)Distance d (mm)Repeated Sensing Position Characteristics (Typical)No. of repetitions: 20Distance d (mm)OutputleveltransistorV cc = 12 Vn d1 = 0.002 mmn d2 = 0.004 mmn d3 = 0.005 mmn d4 = 0.02 mmn d5 = 0.04 mmOutput Circuit DiagramsEE-SX670/670P EE-SX670A/670REE-SX470/470PT erminal Arrangement 6.9525.4191913.4513.25.56.23.813.82.546.40.820.30.7Two, 3.2-dia. holesFour, R1Optical axis(1)(2)(3)(4)Two, 3.8-dia.holesOperation indicator9Note:Not used in EE-SX470EE-SX671/671PEE-SX671A/671R EE-SX471/471P(1)(2)(3)(4)14.53.26.23.826.219.03.02.5413.05.09.08.39.07.23.613.013.419.06.200.70.62.10.36.956.350.87.2215.5Four, R1.0Operation indicatorOptical axisTwo, 3.2-dia. holes13.4Four, R2TerminalArrangement Note:Not used in EE-SX4713.0EE-SX672/672P EE-SX672A/672R EE-SX472/472P(4)(3)(2)(1)13.73.026.012.6 6.413.45.022.29.06.23.82.5413.06.34.32.50.70.319.00.82136.2Operation indicator (back)Optical axisFour, R1.6Four, R1.0Note:Not used in EE-SX472T erminal ArrangementEE-SX673/673P EE-SX673A/673R EE-SX473/473P12.86.33.5722.292.84.96.23.82.5414.413.450.820.30.7Two, R1Two, 3.2-dia. holes(6.65)(1)(2)(3)(4)Optical axisOperation indicator Terminal Arrangement Note:Not used in EE-SX473EE-SX674/674PEE-SX674A/674R EE-SX474/474PT erminal ArrangementNote:Not used in EE-SX474Optical axisOptical axis markOperation indicatorTwo, 3.5-dia. holesotherwise the EE-SX may be damaged.SensorLoad+–Out Do not make mistakes in wiring, such as mistakes in polarity , other -wise the EE-SX may be damaged.SensorLoad+–Out Do not short-circuit the load (i.e., do not connect a power supply di -rectly to the Sensor) as shown below , otherwise the EE-SX may be damaged.SensorLoadLoadshort-circuiting+–OutMountingThe EE-SX is a Sensor to be built into equipment. Therefore, no special protective measures have been taken to protect the EE-SX from external light disturbance. Make sure that the EE-SX is not affected by incandescent lamps or other light sources that may cause external light disturbance, otherwise the EE-SX may mal-function.Be sure to mount the Sensor securely to flat plates. The characteris -tics of the Through-beam Sensor change if the slot is e M3.0 screws when mounting the EE-SX. Be sure to use spring washers with the screws so that the screws will not loosen. The tightening torque applied to each screw must be no more than 0.59 N S m (6 kgf S cm).Make sure that nothing will come into contact with the sensing ele -ment of the Sensor . If the sensing element has scratch damage, the characteristics of the Sensor will decrease.Make sure that the EE-SX is securely mounted and not loosened by vibration or shock.WiringCountermeasures Against SurgeIf the power supply has surge voltage, connect a Zener diode with -standing 30 to 35 V or 0.1 to 1-µF capacitor in parallel to the power supply to absorb the surge voltage.0.1 to 1 µFthe EE-SX as shown below . Be sure to connect a diode for counter-voltage absorption.RelayOUTDo not wire power lines or high-tension lines alongside the lines of the EE-SX in the same conduit, otherwise the EE-SX may be dam -aged or malfunction due to induction. Be sure to wire the lines of the EE-SX separately from power lines or high-tension lines or lay them in an exclusive, shielded conduit.Voltage OutputA Sensor with open collector output can be connected to a device with voltage-input specifications by connecting a resistor between the power supply and output terminals as shown in the following cir -cuit diagram. The resistance of the resistor is normally 4.7 k Ω and must withstand a power of 0.5 W at 24 V and 0.25 W at 12 V .Sensor main circuitResistorCounter (voltage-input model)+24 V (power supply)Input terminal (CP)Input impedance:approx. 4.7 k ΩOutputEE-SX67/47 NPN modelsEE-SX47/67 NPN Models with a 4.7-k Ω Resistor High level:Input voltage (V H ) =R+Z ZV CC =4.7 k + 4.7 k4.7 k x 24 V = 12 V Low level:Load current (I C ) =RV CC == 5.1 mA x 50 to 100 mA R24 VInput voltage (V L ) x 0.4 V Sensor main circuitResistor+24 V (power supply)Input terminal (CP)Input impedance:approx. 4.7 k ΩOutputEE-SX67/47 PNP modelsEE-SX47/67 PNP Models with a 4.7-k Ω Resistor High level:Input voltage (V H ) = Vcc–residual voltage[24 V–1.3 V=22.7 VLow level:Input voltage (V L ) [0 VNote:Refer to the ratings of the Sensor for the relationship be-tween the residual voltage and load current.OthersDo not wire the EE-SX while power is applied, otherwise the EE-SX may be damaged.Do not install the EE-SX in the following locations, otherwise the EE-SX may be damaged or malfunction.Locations with excessive dustLocations with corrosive gasLocations where water, oil, or chemical is directly sprayed Outdoors or locations exposed to direct sunlightMake sure that the operating ambient temperature is within the rated range.The Sensor may be soluble in organic solvent, acid, and alkaline, aromatic hydrocarbon, and chlorinated aliphatic hydrocarbon sol-vents. The characteristics of the Sensor may decrease as a result. Therefore, make sure that the Sensor is free from these solutions.StandardThrough-beam (slot)5 mm(slot1112Photomicrosensors (EE-SX67/47, 77/87 models) and Connectors(EE-1001/1001-1/1006/1009/1010/1010-R) have been certified as products that conform to the following UL Standard.Certified Date:February 9, 1998Certified Models:All OMRON EE-SX67/47-series Photomicrosensors and the Photomicrosensor Connectors (EE-1001/1001-1/1006/1009/1010/1010-R)File No.:E41515Standard Name:UL508: industrial control devicesCertification Method:UL Recognition (recognition certification for products used in the U.S.A.) and Canadian UL Recognition (recog -nition certification for products used in Canada)Applicable Lot No.:928 and after (products manufactured on and after February 9, 1998)The following Photomicrosensors have been certified as products conforming to the EMC Directives (CE marking).CE Marking Date:April 1, 1998Applicable Models:All EE-SX67/47 (A) models, EE-SX67/47 P , R models All EE-SX77/87 (A) models, EE-SX77/87 P , R models EE-SY671/672EE-SPW311/411EE-SPY311/312EE-SPY301/302EE-SPY401/402EE-SPY411/412EE-SPX302/304/306-W2A EE-SPX402/404/406-W2A EE-SPX303/403EE-SPX301/401ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.To convert millimeters into inches, multiply by 0.03937. T o convert grams into ounces, multiply by 0.03527.Cat. No. E303-E1-1In the interest of product improvement, specifications are subject to change without notice.Printed in Japan 0898-4M (0898) aOMRON CorporationIndustrial Sensors DivisionSensing Devices and Components Division H.Q.28th Fl., Crystal T ower Bldg.,1-2-27, Shiromi, Chuo-ku,Osaka 540-6028 JapanPhone: (81)6-949-6012 Fax: (81)6-949-6021。
本特利3300系列传感器仪表（轴系仪表）一、工作原理及组成1、工作原理：根据法拉第电磁感应原理，块状金属导体置于变化的磁场中或在磁场中作切割磁力线运动时，导体内将产生呈涡旋状的感应电流，此电流叫电涡流，以上现象称为电涡流效应。
而根据电涡流效应制成的传感器称为电涡流式传感器。
前置器中高频振荡电流通过延伸电缆流入探头线圈，在探头头部的线圈中产生交变的磁场。
当被测金属体靠近这一磁场，则在此金属表面产生感应电流，与此同时该电涡流场也产生一个方向与头部线圈方向相反的交变磁场，由于其反作用，使头部线圈高频电流的幅度和相位得到改变（线圈的有效阻抗），这一变化与金属体磁导率、电导率、线圈的几何形状、几何尺寸、电流频率以及头部线圈到金属导体表面的距离等参数有关。
通常假定金属导体材质均匀且性能是线性和各项同性，则线圈和金属导体系统的物理性质可由金属导体的电导率б、磁导率ξ、尺寸因子τ、头部体线圈与金属导体表面的距离D、电流强度I和频率ω参数来描述。
则线圈特征阻抗可用Z=F(τ, ξ, б, D, I, ω)函数来表示。
通常我们能做到控制τ, ξ, б, I, ω这几个参数在一定范围内不变，则线圈的特征阻抗Z就成为距离D的单值函数，虽然它整个函数是一非线性的，其函数特征为“S”型曲线，但可以选取它近似为线性的一段。
于此，通过前置器电子线路的处理，将线圈阻抗Z的变化，即头部体线圈与金属导体的距离D的变化转化成电压或电流的变化。
输出信号的大小随探头到被测体表面之间的间距而变化，电涡流传感器就是根据这一原理实现对金属物体的位移、振动等参数的测量。
电涡流式传感器最大的特点是能对位移、厚度、表面温度、速度、应力、材料损伤等进行非接触式连续测量，另外还具有体积小，灵敏度高，频率响应宽等特点，应用极其广泛。
系统输出正比于探头端部与被测导体表面之间的距离的电压信号。
它既能进行静态（位移）测量又能进行动态（振动）测量，主要用于油膜轴承机械的振动和位移测量，以及键相位和转速测量。
CSM_EE-SX1108_DS_C_1_1EE-SX1108微型光电传感器［透过型］■电气及光学特性 (T a = 25°C)项目记号特性值单位条件MIN.TYP.MAX.发光侧正向电压V F —— 1.1 1.3V I F = 5mA 反向电流I R ————10μA V R = 5V 最大发光波长λ P ——940——nm I F = 20mA受光侧光电流I L 50150500μA I F = 5mA ，V CE = 5V 暗电流I D ————100nA V CE = 10V ，0 l x泄漏电流I LEAK——————μA —————集电极发射极之间的饱和电压V CE (sat)——0.10.4V I F = 20mA ，I L = 50μA最大光谱灵敏度波长λ P ——900——nm —————上升时间t r ——10——μs V CC = 5V ，R L = 1k ΩI L = 100μA下降时间t f——10——μsV CC = 5V ，R L = 1k ΩI L = 100μA■外形尺寸（单位：mm ）■特征•实现传感器宽度 5mm 、凹槽宽度 2mm 的超小型传感器•印刷线路板表面实装型•高分辨率（狭片宽度 0.3mm ）■绝对最大额定值 (T a = 25°C)项目记号额定值单位发光侧正向电流I F 25mA 正向脉冲电流I FP 100mA 反向电压V R 5V 受光侧集电极发射极之间的电压V CEO 20V 发射极集电极之间的电压V ECO 5V 集电极电流I C 20mA 集电极损耗P C 75mW 动作温度Topr －30～＋85℃保存温度Tstg －40～＋90℃焊接温度Tsol350（手工焊接）255（回流焊接）℃*1环境温度超过 25℃ 时，请参阅温度额定值图。
*2占空比 1％、脉冲宽度 0.1ms*3焊接时间为手工焊接 3 秒以内、回流焊接 10 秒以内*1*2*1*3EE-SX1108E E S X 1108-微型光电传感器■额定值·特性曲线图 2.正向电流—正向电压特性 (TYP .)图 3.光电流—正向电流特性 (TYP .)图 4.光电流—集电极发射极之间的电压特性 (TYP .)图 5.相对光电流—环境温度特性 (TYP .)图 6.暗电流—环境温度特性 (TYP .)图 7.应答时间—负载电阻特性 (TYP .)图 8.检测位置特性 (TYP .)图 9.检测位置特性 (TYP .)图 10.应答时间测定回路18●编带尺寸（单位：mm）●编带形式●数量2,000 个 / 卷EE-SX1108EE S X 1108-微型光电传感器■实际安装时须注意●回流焊接（1）建议使用以下规格的锡膏。
Photomicrosensor EE-SX67/47 Photomicrosensor with 50- to 100-mASwitching Capacity that can be Builtinto EquipmentPNP output models newly added.Standard, L-shaped, T-shaped, and Close-mount-ing: Five series of models available.Select from thirty output variations, includingLight-ON or Dark-ON/Light-ON (selectable) mod-els.Response frequency as high as 1 kHz.Easy operation monitoring with bright lightindicator.Wide operating voltage range from 5 to 24 VDC.Models (EE-SX jjj A and EE-SX jjj R) withoperation indicators that are lit when sensingobjects are detected (when light is interrupted) areavailable.T-shapedClose-mountingDetection of Lead Frame PositionEE-SX670Lead frameRatingsNote: 1.The indicator is GaP red LED (peak emission wavelength: 690 nm).2.The response frequency was measured by detecting the following rotating disks.Disk2.1 mmCharacteristicsSensing Position Characteristics (Typical)Dark-ON mode Dark-ON moded Tr ONTr OFFd’Tr ONTr OFFDistance d (mm)Distance d (mm)Repeated Sensing Position Characteristics (Typical)No. of repetitions: 20Distance d (mm)OutputleveltransistorV cc = 12 Vn d1 = 0.002 mmn d2 = 0.004 mmn d3 = 0.005 mmn d4 = 0.02 mmn d5 = 0.04 mmOutput Circuit DiagramsEE-SX670/670P EE-SX670A/670REE-SX470/470PT erminal Arrangement 6.9525.4191913.4513.25.56.23.813.82.546.40.820.30.7Two, 3.2-dia. holesFour, R1Optical axis(1)(2)(3)(4)Two, 3.8-dia.holesOperation indicator9Note:Not used in EE-SX470EE-SX671/671PEE-SX671A/671R EE-SX471/471P(1)(2)(3)(4)14.53.26.23.826.219.03.02.5413.05.09.08.39.07.23.613.013.419.06.200.70.62.10.36.956.350.87.2215.5Four, R1.0Operation indicatorOptical axisTwo, 3.2-dia. holes13.4Four, R2TerminalArrangement Note:Not used in EE-SX4713.0EE-SX672/672P EE-SX672A/672R EE-SX472/472P(4)(3)(2)(1)13.73.026.012.6 6.413.45.022.29.06.23.82.5413.06.34.32.50.70.319.00.82136.2Operation indicator (back)Optical axisFour, R1.6Four, R1.0Note:Not used in EE-SX472T erminal ArrangementEE-SX673/673P EE-SX673A/673R EE-SX473/473P12.86.33.5722.292.84.96.23.82.5414.413.450.820.30.7Two, R1Two, 3.2-dia. holes(6.65)(1)(2)(3)(4)Optical axisOperation indicator Terminal Arrangement Note:Not used in EE-SX473EE-SX674/674PEE-SX674A/674R EE-SX474/474PT erminal ArrangementNote:Not used in EE-SX474Optical axisOptical axis markOperation indicatorTwo, 3.5-dia. holesotherwise the EE-SX may be damaged.SensorLoad+–Out Do not make mistakes in wiring, such as mistakes in polarity , other -wise the EE-SX may be damaged.SensorLoad+–Out Do not short-circuit the load (i.e., do not connect a power supply di -rectly to the Sensor) as shown below , otherwise the EE-SX may be damaged.SensorLoadLoadshort-circuiting+–OutMountingThe EE-SX is a Sensor to be built into equipment. Therefore, no special protective measures have been taken to protect the EE-SX from external light disturbance. Make sure that the EE-SX is not affected by incandescent lamps or other light sources that may cause external light disturbance, otherwise the EE-SX may mal-function.Be sure to mount the Sensor securely to flat plates. The characteris -tics of the Through-beam Sensor change if the slot is e M3.0 screws when mounting the EE-SX. Be sure to use spring washers with the screws so that the screws will not loosen. The tightening torque applied to each screw must be no more than 0.59 N S m (6 kgf S cm).Make sure that nothing will come into contact with the sensing ele -ment of the Sensor . If the sensing element has scratch damage, the characteristics of the Sensor will decrease.Make sure that the EE-SX is securely mounted and not loosened by vibration or shock.WiringCountermeasures Against SurgeIf the power supply has surge voltage, connect a Zener diode with -standing 30 to 35 V or 0.1 to 1-µF capacitor in parallel to the power supply to absorb the surge voltage.0.1 to 1 µFthe EE-SX as shown below . Be sure to connect a diode for counter-voltage absorption.RelayOUTDo not wire power lines or high-tension lines alongside the lines of the EE-SX in the same conduit, otherwise the EE-SX may be dam -aged or malfunction due to induction. Be sure to wire the lines of the EE-SX separately from power lines or high-tension lines or lay them in an exclusive, shielded conduit.Voltage OutputA Sensor with open collector output can be connected to a device with voltage-input specifications by connecting a resistor between the power supply and output terminals as shown in the following cir -cuit diagram. The resistance of the resistor is normally 4.7 k Ω and must withstand a power of 0.5 W at 24 V and 0.25 W at 12 V .Sensor main circuitResistorCounter (voltage-input model)+24 V (power supply)Input terminal (CP)Input impedance:approx. 4.7 k ΩOutputEE-SX67/47 NPN modelsEE-SX47/67 NPN Models with a 4.7-k Ω Resistor High level:Input voltage (V H ) =R+Z ZV CC =4.7 k + 4.7 k4.7 k x 24 V = 12 V Low level:Load current (I C ) =RV CC == 5.1 mA x 50 to 100 mA R24 VInput voltage (V L ) x 0.4 V Sensor main circuitResistor+24 V (power supply)Input terminal (CP)Input impedance:approx. 4.7 k ΩOutputEE-SX67/47 PNP modelsEE-SX47/67 PNP Models with a 4.7-k Ω Resistor High level:Input voltage (V H ) = Vcc–residual voltage[24 V–1.3 V=22.7 VLow level:Input voltage (V L ) [0 VNote:Refer to the ratings of the Sensor for the relationship be-tween the residual voltage and load current.OthersDo not wire the EE-SX while power is applied, otherwise the EE-SX may be damaged.Do not install the EE-SX in the following locations, otherwise the EE-SX may be damaged or malfunction.Locations with excessive dustLocations with corrosive gasLocations where water, oil, or chemical is directly sprayed Outdoors or locations exposed to direct sunlightMake sure that the operating ambient temperature is within the rated range.The Sensor may be soluble in organic solvent, acid, and alkaline, aromatic hydrocarbon, and chlorinated aliphatic hydrocarbon sol-vents. The characteristics of the Sensor may decrease as a result. Therefore, make sure that the Sensor is free from these solutions.StandardThrough-beam (slot)5 mm(slot1112Photomicrosensors (EE-SX67/47, 77/87 models) and Connectors(EE-1001/1001-1/1006/1009/1010/1010-R) have been certified as products that conform to the following UL Standard.Certified Date:February 9, 1998Certified Models:All OMRON EE-SX67/47-series Photomicrosensors and the Photomicrosensor Connectors (EE-1001/1001-1/1006/1009/1010/1010-R)File No.:E41515Standard Name:UL508: industrial control devicesCertification Method:UL Recognition (recognition certification for products used in the U.S.A.) and Canadian UL Recognition (recog -nition certification for products used in Canada)Applicable Lot No.:928 and after (products manufactured on and after February 9, 1998)The following Photomicrosensors have been certified as products conforming to the EMC Directives (CE marking).CE Marking Date:April 1, 1998Applicable Models:All EE-SX67/47 (A) models, EE-SX67/47 P , R models All EE-SX77/87 (A) models, EE-SX77/87 P , R models EE-SY671/672EE-SPW311/411EE-SPY311/312EE-SPY301/302EE-SPY401/402EE-SPY411/412EE-SPX302/304/306-W2A EE-SPX402/404/406-W2A EE-SPX303/403EE-SPX301/401ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.To convert millimeters into inches, multiply by 0.03937. T o convert grams into ounces, multiply by 0.03527.Cat. No. E303-E1-1In the interest of product improvement, specifications are subject to change without notice.Printed in Japan 0898-4M (0898) aOMRON CorporationIndustrial Sensors DivisionSensing Devices and Components Division H.Q.28th Fl., Crystal T ower Bldg.,1-2-27, Shiromi, Chuo-ku,Osaka 540-6028 JapanPhone: (81)6-949-6012 Fax: (81)6-949-6021。
CSM_EE-SX1103_DS_C_1_162EE-SX1103微型光电传感器［透过型］■电气及光学特性 (Ta = 25°C)项目记号特性值单位条件MIN.TYP.MAX.发光侧正向电压V F —— 1.3 1.6V I F = 50mA 反向电流I R ————10μA V R = 5V 最大发光波长λ P ——950——nmI F = 50mA受光侧光电流I L 0.5————mA I F = 20mA ，V CE = 5V 暗电流I D ————500nA V CE = 10V ，0 l x泄漏电流I LEAK——————μA —————集电极发射极之间的饱和电压V CE (sat)————0.4V I F = 20mA ，I L = 0.3mA 最大光谱灵敏度波长λ P ——800——nm V CE = 5V上升时间t r ——10——μs V CC = 5V ，R L = 100ΩI F = 20mA下降时间t f——10——μsV CC = 5V ，R L = 100ΩI F = 20mA■外形尺寸（单位：mm ）■特征•实现传感器宽度 5mm 、凹槽宽度 2mm 的超小型传感器•印刷线路板实装型•高分辨率（狭片宽度 0.4mm ）■绝对最大额定值 (Ta = 25°C)项目记号额定值单位发光侧正向电流I F 50mA 正向脉冲电流I FP ——A 反向电压V R 5V 受光侧集电极发射极之间的电压V CEO 30V 发射极集电极之间的电压V ECO 4.5V 集电极电流I C 30mA 集电极损耗P C 80mW 动作温度Topr －25～＋85℃保存温度Tstg －30～＋100℃焊接温度Tsol260℃*1环境温度超过 25℃ 时，请参阅温度额定值图。
*2焊接时间请控制在 3 秒以内*1*1*2EE-SX110363E E S X 1103-微型光电传感器■额定值·特性曲线图 1.正向电流·集电极损耗的温度额定值图图 2.正向电流—正向电压特性 (TYP.)图 3.光电流—正向电流特性 (TYP.)图 4.光电流—集电极发射极之间的电压特性 (TYP.)图 5.相对光电流—环境温度特性 (TYP.)图 6.暗电流—环境温度特性 (TYP.)图 7.应答时间—光电流特性 (TYP.)图 8.检测位置特性 (TYP.)图 9.检测位置特性 (TYP.)图 10.应答时间测定回路。
