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INA216A4YFFT;中文规格书,Datasheet资料

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OUTIN-IN+

GNDLoadSupply:+1.8V to +5.5VShunt

R1R2

1.6MW1.6MW

PRODUCTR= R12INA216A1INA216A2INA216A3INA216A464kW32kW16kW8kWGAIN2550100

200INA216www.ti.comSBOS503C–JUNE2010–REVISEDNOVEMBER2011SmallSize,Low-Power,Unidirectional,CURRENTSHUNTMONITORZerø-DriftSeriesCheckforSamples:INA216FEATURESDESCRIPTIONTheINA216isahigh-sidevoltageoutputcurrent•CHIP-SCALEPACKAGEshuntmonitorthatcansensedropsacrossshuntsat•COMMON-MODERANGE:+1.8Vto+5.5Vcommon-modevoltagesfrom+1.8Vto+5.5V.Four•OFFSETVOLTAGE:±30μVfixedgainsareavailable:25V/V,50V/V,100V/V,and200V/V.ThelowoffsetoftheZerø-Driftarchitecture•GAINERROR:±0.2%MAXenablescurrentsensingwithmaximumdropsacross•CHOICEOFGAINS:theshuntaslowas10mVfull-scale,orwithwide–INA216A1:25V/Vdynamicrangesofover1000:1.–INA216A2:50V/VThesedevicesoperatefromasingle+1.8Vto+5.5V–INA216A3:100V/Vpowersupply,drawingamaximumof25μAofsupplycurrent.TheINA216seriesarespecifiedoverthe–INA216A4:200V/Vtemperaturerangeof–40°Cto+125°C,andoffered•QUIESCENTCURRENT:13μAinachip-scalepackage.•BUFFEREDVOLTAGEOUTPUT:NoAdditionalOpAmpNeededAPPLICATIONS•NOTEBOOKCOMPUTERS•CELLPHONES•TELECOMEQUIPMENT•POWERMANAGEMENT•BATTERYCHARGERS

Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.Alltrademarksarethepropertyoftheirrespectiveowners.PRODUCTIONDATAinformationiscurrentasofpublicationdate.Copyright©2010–2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.Productionprocessingdoesnotnecessarilyincludetestingofallparameters.http://oneic.com/INA216SBOS503C–JUNE2010–REVISEDNOVEMBER2011www.ti.comThisintegratedcircuitcanbedamagedbyESD.TexasInstrumentsrecommendsthatallintegratedcircuitsbehandledwithappropriateprecautions.Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmaybemoresusceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.PACKAGEINFORMATION(1)PACKAGEPRODUCTGAINPACKAGE-LEADDESIGNATORPACKAGEMARKINGWCSP-4YFFOWINA216A125V/VThinQFN-10RSWSNJWCSP-4YFFOXINA216A250V/VThinQFN-10RSWSOJWCSP-4YFFOYINA216A3100V/VThinQFN-10RSWSPJWCSP-4YFFOZINA216A4200V/VThinQFN-10RSWSQJ(1)ForthemostcurrentpackageandorderinginformationseethePackageOptionAddendumattheendofthisdocument,orvisitthedeviceproductfolderatwww.ti.com.ABSOLUTEMAXIMUMRATINGS(1)Overoperatingfree-airtemperaturerange,unlessotherwisenoted.INA216UNITSupplyVoltage+7VDifferential(VIN+)–(VIN–)–5.5to+5.5VAnalogInputs,VIN+,VIN–(2)Common-Mode(3)GND–0.3Vto+5.5VOutput(3)GND–0.3Vto(V+)+0.3VInputCurrentintoAnyPin(3)5mAOperatingTemperature–55to+150°CStorageTemperature–65to+150°CJunctionTemperature+150°CHumanBodyModel2.5kVESDRatings:ChargedDeviceModel1kVMachineModel200V(1)Stressesabovetheseratingsmaycausepermanentdamage.Exposuretoabsolutemaximumconditionsforextendedperiodsmaydegradedevicereliability.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthosespecifiedisnotimplied.(2)VIN+andVIN–arethevoltagesattheIN+andIN–pins,respectively.(3)Inputvoltageatanypinmayexceedthevoltageshownifthecurrentatthatpinislimitedto5mA.

2SubmitDocumentationFeedbackCopyright©2010–2011,TexasInstrumentsIncorporatedProductFolderLink(s):INA216http://oneic.com/

OUTA2A1B2B1IN-IN+GNDNC(1)NC(1)

NC(1)IN+IN+IN-IN-NC(1)89105431276GND

OUTINA216www.ti.comSBOS503C–JUNE2010–REVISEDNOVEMBER2011THERMALINFORMATIONINA216A1YFF,INA216A2YFFINA216A3YFF,THERMALMETRIC(1)UNITSINA216A4YFFYFF4PINSθJAJunction-to-ambientthermalresistance160θJC(top)Junction-to-case(top)thermalresistance75θJBJunction-to-boardthermalresistance76°C/WψJTJunction-to-topcharacterizationparameter3ψJBJunction-to-boardcharacterizationparameter74θJC(bottom)Junction-to-case(bottom)thermalresistancen/a(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.THERMALINFORMATIONINA216A1RSW,INA216A2RSWINA216A3RSW,THERMALMETRIC(1)UNITSINA216A4RSWRSW10PINSθJAJunction-to-ambientthermalresistance114.9θJC(top)Junction-to-case(top)thermalresistance66.3θJBJunction-to-boardthermalresistance21.4°C/WψJTJunction-to-topcharacterizationparameter1.9ψJBJunction-to-boardcharacterizationparameter21.4θJC(bottom)Junction-to-case(bottom)thermalresistanceN/A(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.PINCONFIGURATIONSRSWPACKAGEYFFPACKAGEThinQFN-10WCSP-4(TOPVIEW)(TOPVIEW)

(2)Bumpsidedown.Drawingnottoscale.(3)Powersupplyisderivedfromshunt(minimumcommon-moderange=1.8V)(1)Nointernalconnection.

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VNI4140KTR;VNI4140K;中文规格书,Datasheet资料

VNI4140KTR;VNI4140K;中文规格书,Datasheet资料

This is information on a product in full production. March 2012Doc ID 14174 Rev 101/25

25VNI4140K

Quad high-side smart power solid-state relay

Datasheet − production data

Features

■Output current: 0.7 A per channel

■Shorted load protections

■Junction overtemperature protection

■Case overtemperature protection for thermal

independence of the channels

■Thermal case shutdown restart not

simultaneous for the various channels

■Protection against loss of ground

■Current limitation

■Undervoltage shutdown

■Open drain diagnostic outputs

■3.3 V CMOS/TTL compatible inputs

■Fast demagnetization of inductive loads

■Conforms to IEC 61131-2

■ESD according to IEC 61000-4-2 up to +/-

25kV

Figure 1.Block diagramDescription

The VNI4140K is a monolithic device made using

STMicroelectronics VIPower technology, intended

for driving four independent resistive or inductive

ATTINY24A中文资料

ATTINY24A中文资料

Features•High Performance, Low Power AVR® 8-Bit Microcontroller•Advanced RISC Architecture–120 Powerful Instructions – Most Single Clock Cycle Execution–32 x 8 General Purpose Working Registers–Fully Static Operation•High Endurance, Non-Volatile Memory Segments–2K/4K Bytes of In-System, Self-Programmable Flash Program Memory•Endurance: 10,000 Write/Erase Cycles–128/256 Bytes of In-System Programmable EEPROM•Endurance: 100,000 Write/Erase Cycles–128/256 Bytes of Internal SRAM–Data retention: 20 years at 85°C / 100 years at 25°C–Programming Lock for Self-Programming Flash & EEPROM Data Security•Peripheral Features–One 8-Bit and One 16-Bit Timer/Counter with Two PWM Channels, Each–10-bit ADC•8 Single-Ended Channels•12 Differential ADC Channel Pairs with Programmable Gain (1x / 20x)–Programmable Watchdog Timer with Separate On-chip Oscillator–On-Chip Analog Comparator–Universal Serial Interface•Special Microcontroller Features–debugWIRE On-chip Debug System–In-System Programmable via SPI Port–Internal and External Interrupt Sources•Pin Change Interrupt on 12 Pins–Low Power Idle, ADC Noise Reduction, Standby and Power-Down Modes–Enhanced Power-on Reset Circuit–Programmable Brown-Out Detection Circuit with Software Disable Function–Internal Calibrated Oscillator–On-Chip Temperature Sensor•I/O and Packages–Available in 20-Pin QFN/MLF & 14-Pin SOIC and PDIP–Twelve Programmable I/O Lines•Operating Voltage:–1.8 – 5.5V•Speed Grade:–0 – 4 MHz @ 1.8 – 5.5V–0 – 10 MHz @ 2.7 – 5.5V–0 – 20 MHz @ 4.5 – 5.5V•Industrial Temperature Range: -40°C to +85°C•Low Power Consumption–Active Mode:•210 µA at 1.8V and 1MHz–Idle

KAQY216H中文资料

KAQY216H中文资料

PRODUCT SPECIFICATION DATE：03/01/2005

Preliminary cosmo

ELECTRONICS CORPORATIONSOLID STATE RELAY - MOSFET OUTPUTKAQY216H SHEET 1 OF 7REV.0

z OUTSIDE DIMENSION︰

13.00°0.266.507.62

2.5413.00°3.50

3.000.4

1.202.70

0.5XXX

4.80Date CodeY216H

z Turn On / Turn Off time

Output

TONInput

TOFF90%10%NORMALLY OPEN1 FORM A

43

14

23

z Absolute Maximum Ratings （Ta=25℃）

Emitter（Input） Detector（Output）

Reverse Voltage ……………………………… 5.0VOutput Breakdown Voltage …………………± 600V

Continuous Forward Current ……………...50mAContinuous Load Current …………… ± 120mA

Peak Forward Current ………………………… 1APower Dissipation …………………………500mW

Power Dissipation …………………………100mW

Derate Linearly from 25℃ …………… 1.3mW/℃

General Characteristics

Isolation Test Voltage ……………… 5000VACrmsStorage Temperature Range …… -40℃ to +125℃

Operating Temperature Range … -40℃ to +85℃Isolation Resistance Vio=500V，Ta=25℃ …………………… ≧1010ΩJunction Temperature ………………………100℃

AQY221N2V1Y;AQY221N2VY;AQY221N2V1W;AQY221N2VW;AQY221R2VW;中文规格书,Datasheet资料

AQY221N2V1Y;AQY221N2VY;AQY221N2V1W;AQY221N2VW;AQY221R2VW;中文规格书,Datasheet资料

RF SSOP 1 Form A CxR10 (AQY221PPV)

1ds_x615_en_aqy221__v: 010611JTYPES

RATING

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)Micro-miniature SSOP

Lower output capacitance

and on resistance (C󰀘R10)

40 V load voltageRF SSOP 1 Form A C×R10

(AQY221PPV)

ItemSymbolR typeC type

Remarks

AQY221R4VAQY221R2VAQY221N2V

InputLED forward currentI

F50mA

LED reverse voltageV

R

5V

Peak forward currentI

FP1Af=100 Hz, Duty factor=0.1%

Power dissipationP

in75mW

OutputLoad voltage (peak AC)V

L40V

Continuous load currentI

L0.5A0.25A

0.12A

Peak AC, DC

Peak load currentI

peak1A0.75A0.3A100ms (1shot), V

L=DC

Power dissipationP

out250mW

Total power dissipationP

T300mW

I/O isolation voltageV

iso1,500V AC

Operating temperatureT

opr–40°C to +85°C –40°F to +185°FNon-condensing at low temperatures

Storage temperatureT

stg–40°C to +100°C –40°F to +212°

Fmm inchFEATURES