PESD5V0X1BT中文资料
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Min Max Unit
[1] -
9
kV
-
10 kV
Table 8. ESD standards compliance Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
Conditions
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NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified.
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 9. Characteristics Tamb = 25 °C unless otherwise specified.
Symbol Parameter
PESD5V0X1BT
SOT23
JEDEC TO-236AB
Package configuration
ultra small and flat lead very small
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD)
[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. [2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Fig 4. V-I characteristics for a bidirectional ESD protection diode
−IPP
006aaa407
Fig 5. V-I characteristics for a unidirectional ESD protection diode
5. Limiting values
Marking code[1] E6 U3*
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
2
cathode (diode 2)
3
common anode
1
2
3
1
2
1
2
006aaa154
3
1
2
006aaa154
3. Ordering information
Table 4. Ordering information
Type number
Package
Name
Description
PESD5V0X1BQ -
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PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients.
Symbol Paran Typ Max Unit
Per diode
VRWM Cd
reverse standoff voltage diode capacitance
f = 1 MHz; VR = 0 V [1] -
[2] -
-
5
V
0.9 1.3 pF
2
2.6 pF
(ADSL) I High-speed data lines
I Subscriber Identity Module (SIM) card protection
I Computers, peripherals and printers I Cellular handsets and accessories I Portable electronics I Communication systems I Audio and video equipment
rdif
differential resistance IR = 1 mA
Min Typ Max Unit
-
-
5
V
-
1
100 nA
5.8 7.5 9.5 V
[1] -
0.9 1.3 pF
[2] -
2
2.6 pF
[1] -
0.8 1.2 pF
[2] -
1.7 2.3 pF
-
-
100 Ω
[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. [2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
plastic surface-mounted package; 3 leads
PESD5V0X1BT -
plastic surface-mounted package; 3 leads
Version SOT663 SOT23
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Table 3. Pinning
Pin
Description
PESD5V0X1BQ
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
Simplified outline
Graphic symbol
3
3
PESD5V0X1BT
1
cathode (diode 1)
Min
Per device
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
150
°C
+150 °C
+150 °C
Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified.
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
4 of 13
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NXP Semiconductors
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
IPP 100 % 90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
t
30 ns
two lines I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified I Very low leakage current: IRM = 1 nA
1.3 Applications
I USB interfaces
I Antenna protection I Radio Frequency (RF) protection I 10/100/1000 Mbit/s Ethernet I FireWire I Asymmetric Digital Subscriber Line
> 8 kV (contact) > 4 kV
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
3 of 13
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Diode capacitance as a function of reverse voltage; typical values