AO4401中文资料
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Symbol
Typ Max 31405975R θJL
1624
Maximum Junction-to-Lead C
Steady-State
°C/W
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W AO4401
Symbol Min Typ
Max
Units BV DSS -30
V -1T J =55°C
-5I GSS ±100nA V GS(th)-0.7
-1-1.3V I D(ON)A 38
46T J =125°C
704961m Ω76117m Ωg FS 7
11S V SD -0.75
-1V I S
-4.2
A C iss 940
pF C oss 104pF C rss
73pF R g 6ΩQ g 9.4nC Q gs
2nC Q gd 3nC t D(on)7.6ns t r 8.6ns t D(off)44.7ns t f
16.5ns t rr 22.7ns Q rr 15.9
nC
Gate resistance V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance
Turn-On DelayTime DYNAMIC PARAMETERS I F =-5A, dI/dt=100A/µs V GS =0V, V DS =-15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge
V GS =-4.5V, V DS =-15V, I D =-5A
Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime
V GS =-10V, V DS =-15V, R L =2.4Ω, R GEN =6Ω
m ΩV GS =-4.5V, I D =-5A I S =-1A,V GS =0V V DS =-5V, I D =-5A R DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage I DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-24V, V GS =0V
V DS =0V, V GS =±12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
I F =-5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage On state drain current
I D =-250µA, V GS =0V V GS =-2.5V, I D =-1A V GS =-4.5V, V DS =-5V V GS =-10V, I D =-6.1A
Reverse Transfer Capacitance A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.。