BAP55LX,315;中文规格书,Datasheet资料

Rev. 5 — 15 September 2011
Min Typ Max Unit
25 -
-
V
0.2 -
0.5 -
0.8 -
-
-
1 V
1.5 V
2 V
1
V
2
-
6
-
12 -
-
-
6.5 mA 15 mA 25 mA 1 nA
© NXP B.V. 2011. All rights reserved.
Table 1. Symbol VDS IDSS
Ptot yfs
Ciss Crss
Quick reference data
Parameter
Conditions
drain-source voltage (DC)
drain current
BF861A
VGS = 0 V; VDS = 8 V
BF861B
Symbol Parameter
Conditions
Min
VDS VGSO VDGO IG Ptot Tstg Tj
drain-source voltage (DC) gate-source voltage drain-gate voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature
VDS = 8 V. (1) VGS = 0 V. (2) VGS = 100 mV. (3) VGS = 200 mV. (4) VGS = 300 mV.
Fig 7. Typical output characteristics: BF861A.

-0.3V to 100V -0.3V to 100V
-0.3V to 7V -0.3V to 7V −65°C to 150°C
Operating Ratings (Note 1)
IN, OUT Pins OFF Pin Voltage nFGD Voltage (Off) nFGD Sink Current (On) Junction Temperature Range (TJ)
VIN = 75.0V VOUT = VIN - 100 mV
GATE Pin Source Current
VGATE - VIN in Forward Operation (Note 8)
Gate Capacitance Discharge Time at Forward to Reverse Transition See Figure 3
Voltage sense connection to the external MOSFET Source pin and supply input to the internal charge pump.
Connection to the external MOSFET Gate.
Voltage sense connection to the external MOSFET Drain pin and supply pin for biasing the internal control circuitry.
CGATE = 10 nF (Note 6)
CGATE = 47 nF (Note 6)
6.0
-
75.0
V
180
240
300
262
350

Recorders
• Industrial:Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
• Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
(VDS = 5.0 V,VGS = 0 V, f = 10 kHz)
Coss
Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
Crss
Transfer Capacitance
Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2) Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5)
Junction Temperature
Drain (3)
Gate (1)
1.0 k 300 k
Gate (2)
1.0 k 300 k
1.0 k 300 k
CASE 318
Source (2)
ห้องสมุดไป่ตู้
Source (1)
Source (4)
CASE 318F
Figure 1. Internal Circuit Diagrams
Gate (5)
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Product data sheet
/
Rev. 01 — 17 July 2009
© NXP B.V. 2009. All rights reserved.
3 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
500
Ptot (mW)
400
006aab618
300
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT363 (SC-88)
BC846BPN_1
Tamb ≤ 25 °C
[1] −55 −65
Max Unit
80
V
65
V
6
V
100
mA
200
mA
200
mA
200
mW
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.