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ATR0981-TRHY中文资料

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Features

•High-power-added Efficient Power Amplifier (Pout Typically 29 dBm)•Controlled Output Power•Low-noise Preamplifier (NF Typically 1.5 dB) •Few External Components•PSSO20 Plastic Package with Down-set Paddle

Electrostatic sensitive device. Observe precautions for handling.

1.Description

The ATR0981 is a monolithic IC manufactured using Atmel’s advanced SiGe technol-ogy. The IC performs a transmit and receive front-end function, dedicated for a frequency range of 300 MHz to 500 MHz. It consists of a Low-Noise Amplifier (LNA) and a Power Amplifier (PA) with good Power-added Efficiency (PAE).

Figure 1-1.Block Diagram

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10820191817

BIAS

BIAS161514121113UHF SiGe

Front-end IC

ATR0981

Preliminary

Rev. 4862A–SIGE–09/05元器件交易网www.cecb2b.com

2

4862A–SIGE–09/05ATR0981 [Preliminary] 2.Pin Configuration

Figure 2-1.Pinning PSSO20 with Down Set Paddle

GND4

VS_CTRLGND5LNA_OUTGND4PA_INPOUT_CONTROLGND3NCGND6V2_PAGND51234567891020191817161514131211V3_PA_OUTV3_PA_OUTV3_PA_OUT

GND3

GND2

GND1LNA_IN

BIAS_LNATable 2-1.Pin Description

PinSymbolFunction

1V3_PA_OUTMatching network for power amplifier output

2V3_PA_OUTInductor to power supply and matching network for power amplifier output

3V3_PA_OUTInductor to power supply and matching network for power amplifier output

4GND4Ground

5GND3Ground

6NCNot connected

7GND2Ground

8LNA_INLow-noise amplifier input

9GND1Ground

10BIAS_LNAResistor to VS sets the LNA current

11VS_CTRLSupply voltage for control of power amplifier

12GND5Ground

13LNA_OUTLow-noise amplifier output and supply voltage

14GND4Ground

15PA_INPower amplifier input

16GND3Ground

17POUT_CONTROLPower amplifier control input

18GND6Ground

19V2_PASupply voltage for power amplifier

20GND5Ground元器件交易网www.cecb2b.com 3

4862A–SIGE–09/05 ATR0981 [Preliminary]

3.Absolute Maximum Ratings All voltages are referred to GND (Pins 7, 9, 16, 18, 20, Slug)

ParametersSymbolMin.Max.Unit

Supply voltage PA, TX, pins 1, 2, 3, 11, 19VS_PA5V

Supply voltage LNA, RX, pin 13VS_LNA2.8V

PA control voltage, TX, pin 17VCNTL5V

Junction temperatureTjmax150°C

Storage temperatureTStg–55+125°C

Electrostatic handling HMB, all RF pinsVESD200V

Electrostatic handling HMB, all control pinsVESD2kV

4.Operating Range

All voltages are referred to GND (Pins 7, 9, 16, 18, 20, Slug). The following table represents the sum of all supply currents into the mentioned pins.

ParametersTest Conditions/PinsSymbolMin.Typ.Max.Unit

Supply voltage PATX, pins 1, 2, 3, 11, 19VS_PA3.03.64.5V

Supply voltage LNARX, pin 13VS_LNA2.42.52.6V

Supply current PATX, pins 1, 2, 3, 11, 19IS_PA400mA

Supply current LNAPins 10, 13IS_LNA2.5mA

Ambient temperatureTamb–30+25+60°C

5.Thermal Resistance

ParametersSymbolValueUnit

Junction ambientRthJA19K/W元器件交易网www.cecb2b.com

4

4862A–SIGE–09/05ATR0981 [Preliminary]

Notes:1.Power amplifier should be unconditionally stable, maximum duty cycle 100%, true cw operation, maximum load mismatch 10:1 for 5s at 3.6V2.Ensured by design6.Electrical Characteristics

Test conditions (unless otherwise specified) : VS_PA = 3.6V, Tamb = 25°C.

ParametersTest Conditions/PinsSymbolMin.Typ.Max.Unit

Power Amplifier(1)

Supply voltageTX, pins 1, 2, 3, 11, 19VS_PA3.03.64.5V

Supply currentTX, pins 1, 2, 3, 11, 19IS_PA400550mA

Frequency rangeTXf300500MHz

Power gainTX, pin 15 to pins 1, 2, 3Gp3034dB

Output power control rangeTX∆Pout±1±3dB

Control voltageTX, output power (maximum), pin 172.02.5V

TX, output power (minimum), pin 170.7V

Control currentPin 170400µA

Shut down modeControl voltage ≤ 0.1V, pins 1, 2, 3, 11, 19IS_PA1020µA

Power added efficiencyTX at 466 MHzPAE5055%

Saturated output powerTX, input power 3 dBmPsat27.52930.5dBm

HarmonicsTX, input power 3 dBm2 fo–20dBc

TX, input power 3 dBm3 fo–20dBc

Low-noise Amplifier

Supply voltageRX, pins 10, 13VS_LNA2.42.52.6V

Supply currentRX, pins 10, 13IS_LNA2.53.5mA

Frequency rangeRXf300500MHz

Power gainRX at R1 = 5.6 kΩ, IS = 2.5 mAGp17.51920.5dB

Noise figure(2)RX at R1 = 5.6 kΩ, IS = 2.5 mANF1.52.0dB

IsolationRX at R1 = 5.6 kΩ, IS = 2.5 mAISO20dB

Third-order input interception pointRX at R1 = 5.6 kΩ, IS = 2.5 mAIIP3–13–10dBm元器件交易网www.cecb2b.com 5

4862A–SIGE–09/05 ATR0981 [Preliminary]

7.Typical Characteristics

Figure 7-1.Power Sweep

Figure 7-2.Ramp Sweep

Figure 7-3.VCC Sweep

-20.0-10.00.010.020.030.040.050.060.070.0

-50.0-40.0-30.0-20.0-10.00.010.020.0Pin (dBm)PAE (%)

Pout (dBm)

Gain (dB)Pout

GainPAE

010203040506070

0.000.501.001.502.002.503.003.50Vramp (V) PAE (%)

Pout (dBm)

PoutPAE

0.010.020.030.040.050.060.070.0

0.01.02.03.04.05.0VCC (V)PAE (%)

Pout (dBm)PAE

Pout元器件交易网www.cecb2b.com

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IRL81A中文资料

IRL81A中文资料

IRL 81 AGaAlAs-Infrarot-Sendediode

GaAlAs-Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

2007-08-061Wesentliche Merkmale

•GaAIAs-Lumineszenzdiode im nahen

Infrarotbereich

•Rosa Kunststoff-Miniaturgehäuse, seitliche

Abstrahlung

•Preisgünstig

•Lange Lebensdauer (Langzeitstabilität)

•Weiter Öffnungskegel (± 25°)

•Passend zu Fototransistor LPT 80 A

Anwendungen

•Fertigungs- und Kontrollanwendungen der

Industrie, die eine Unterbrechung des

Lichtstrahls erfordern

•LichtschrankenTyp

TypeBestellnummer

Ordering CodeGehäuse

Package

IRL 81 AQ68000A8000Hellrot eingefärbtes Kunststoffgehäuse, seitliche

Abstrahlung, Anschlüsse im 2,54 mm-Raster

Light-red colored plastic package, sidelooker,

solder tabes 2.54 mm (1/

10”)Features

•GaAIAs infrared emitting diode in the near

infrared range

•Pink plastic package with lateral emission

AZD9291中文说明书

AZD9291中文说明书

【研发名】AZD9291

【药物名】Osimertinib

【商品名】Tagrisso【美国上市时间】非小细胞肺癌，2015年11月13日【类别】抑制剂【靶点】EGFR

【分子结构】

化学式：C28H33N7O2•CH4O3S分子式：N-(2-{2dimethylaminoethyl-methylamino}-4-methoxy-5-{[4-(1-methylindol-3-yl)pyrimidin-2yl]amino}phenyl)prop-2-enamide mesylate salt分子结构：

分子量：596 g/mol

【生产公司】AstraZeneca Pharmaceuticals 阿斯利康

【购买地】美国

【剂型和规格】

口服片剂，两种剂量：80mg和40mg。

80 mg 药片：米色，椭圆形和双凸片在一侧标记有“AZ 80”和反面平坦和可得到30片瓶(NDC 0310-1350-30)。

40 mg 药片：米色，圆和双凸片在一侧标记有“AZ 40”和反面平坦和可得到20片瓶(NDC 0310-1349-30)。

【本质】

AZD9291含40或80 mg Osimertinib，分别等同于47.7和95.4 mg Osimertinib甲磺酸盐。在片芯中无活性成分是甘露醇，微晶纤维素，低取代羟丙基纤维素和硬脂酰富马酸钠。片涂层由聚乙烯醇，二氧化钛，聚乙二醇3350，滑石，氧化铁黄，氧化铁红和氧化铁黑组成。

【作用机理】

AZD9291是表皮生长因子受体(EGFR)的激酶抑制剂，可逆性结合EGFR(T790M，L858R和外显子19缺失)。在培养细胞中和动物肿瘤移植模型，AZD9291表现出对NSCLC系窝藏EGFR突变(T790M/L858R，L858R，T790M/外显子19缺失，和外显子19缺失)和，至较低程度，野生型EGFR扩增抗肿瘤活性。 在AZD9291口服给药后血浆中曾被鉴定出两种活性代谢物(AZ7550和AZ5104)与AZD9291有相似抑制性。AZ7550显示与AZD9291具有相似疗效，而AZ5104显示对外显子19缺失、T790M突变体(约8-倍)和野生型(约 15-倍)EGFR有更强的疗效。在体外，AZD9291在临床相关浓度还抑制HER2，HER3，HER4，ACK1和BLK的活性。

IR19-21C-TR8中文资料

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Everlight Electronics Co., Ltd. http:\\ Rev 2 Page: 1 of 10 Device No：DTR-019-001 Prepared date：07-20-2005 Prepared by：Jaine Tsai Technical Data Sheet 0.8mm Height Flat Top Infrared LED IR19-21C/TR8 Features ․Small double-end package ․Low forward voltage ․Good spectral matching to Si photo detector ․Package in 8mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․IR19-21C/TR8 is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens. ․The device is spectrally matched with silicon photodiode and phototransistor. Applications ․PCB mounted infrared sensor ․Infrared emitting for miniature light barrier ․Floppy disk drive ․Optoelectronic switch ․Smoke detector Device Selection Guide Chip LED Part No. Material Lens Color IR GaAlAs Water Clear 元器件交易网

GT60N321中文资料

GT60N321中文资料

GT60N321

2002-01-18 1 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321

High Power Switching Applications The 4th Generation · FRD included between emitter and collector · Enhancement-mode · High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) · Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics symbol Rating

Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES ±25 V DC IC 60 Collector Current 1 ms ICP 120 A

DC IECF 15 Emitter-Collector Forward Current 1 ms IECFP 120 A

Collector Power Dissipation (Tc = 25°C) PC 170 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~150 °C Screw Torque ¾󰀁0.8 N･m Equivalent Circuit Unit: mm

JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.)