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IRF640B(中英文)

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©2001 Fairchild Semiconductor Corporation

November 2001

Rev. A, November 2001IRF640B/IRFS640B

IRF640B/IRFS640B

200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.Features

•18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V

•Low gate charge ( typical 45 nC)

•Low Crss ( typical 45 pF)

•Fast switching

•100% avalanche tested

•Improved dv/dt capability

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics SymbolParameterIRF640BIRFS640BUnits

VDSSDrain-Source Voltage200V

IDDrain Current - Continuous (TC = 25°C)1818 *A

- Continuous (TC = 100°C)11.411.4 *A

IDMDrain Current- Pulsed(Note 1)7272 *A

VGSSGate-Source Voltage± 30V

EASSingle Pulsed Avalanche Energy(Note 2)250mJ

IARAvalanche Current(Note 1)18A

EARRepetitive Avalanche Energy(Note 1)13.9mJ

dv/dtPeak Diode Recovery dv/dt(Note 3)5.5V/ns

PDPower Dissipation (TC = 25°C)13943W

- Derate above 25°C1.110.35W/°C

TJ, TSTGOperating and Storage Temperature Range-55 to +150°C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds300°C

SymbolParameterIRF640BIRFS640BUnits

RθJCThermal Resistance, Junction-to-Case0.92.89°C/W

RθCSThermal Resistance, Case-to-Sink0.5--°C/W

RθJAThermal Resistance, Junction-to-Ambient62.562.5°C/W TO-220

IRF SeriesGSD

SD

G

TO-220F

IRFS SeriesGSD

雪崩能量

雪崩电流

功率耗散

焊接温度符号衬底和漏之间的PN

结所形成的本征二

极管称为体二极管概述丗

IRF640B/IRFS640B是增强型N沟道功

率场效应管丆采用平面条形DMOS

工艺生产制造.

IRF640B/IRFS640B具有低导通电阻、

优越的开关特性以及抗雪崩击穿能力丆

适合用于高效开关电源。这些设备都适

合高效率开关直流/直流转换器,切换式

电力供应,DC-AC转换器不间断电源和

电机控制.特性

。 18A, 200V, RDS(on) = 0.18？

@VGS = 10 V

。低栅极存储电荷乮典型值

45nC•j

。低传输电容乮典型值45pF

。快速转换

。100%雪崩测试

。提高的电压上升率能力

在栅源短接丆工作温度为25℃时丆漏-源额定电压(VDSS)是指漏-源未发生雪崩

击穿前所能施加的最大电压 Rev. A, November 2001IRF640B/IRFS640B

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

©2001 Fairchild Semiconductor CorporationElectrical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.16mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 18A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperatureSymbolParameterTest ConditionsMinTypMaxUnits

Off Characteristics

BVDSSDrain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA200----V

∆BVDSS

/ ∆TJBreakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C--0.2--V/°C

IDSSZero Gate Voltage Drain CurrentVDS = 200 V, VGS = 0 V----10µA

VDS = 160 V, TC = 125°C----100µA

IGSSFGate-Body Leakage Current, ForwardVGS = 30 V, VDS = 0 V ----100nA

IGSSRGate-Body Leakage Current, ReverseVGS = -30 V, VDS = 0 V -----100nA

On Characteristics

VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

RDS(on)Static Drain-Source

On-ResistanceVGS = 10 V, ID = 9.0 A --0.1450.18Ω

gFSForward TransconductanceVDS = 40 V, ID = 9.0 A --13--S

Dynamic Characteristics

CissInput CapacitanceVDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--13001700pF

CossOutput Capacitance--175230pF

CrssReverse Transfer Capacitance--4560pF

Switching Characteristics

td(on)Turn-On Delay Time

VDD = 100 V, ID = 18 A,

RG = 25 Ω

--2050ns

trTurn-On Rise Time--145300ns

td(off)Turn-Off Delay Time--145300ns

tfTurn-Off Fall Time--110230ns

QgTotal Gate ChargeVDS = 160 V, ID = 18 A,

VGS = 10 V

--4558nC

QgsGate-Source Charge--6.5--nC

QgdGate-Drain Charge--22--nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current----18A

ISMMaximum Pulsed Drain-Source Diode Forward Current----72A

VSDDrain-Source Diode Forward VoltageVGS = 0 V, IS = 18 A ----1.5V

trrReverse Recovery TimeVGS = 0 V, IS = 18 A,

dIF / dt = 100 A/µs --195--ns

QrrReverse Recovery Charge--1.47--µC电气特性乯

符号测试条件最小值典型值最大值

击穿电压变化率

正向栅极漏电流

反向栅极漏电流关断特性乯

开启特性

开启电压

导通电阻漏电流丗PN结在截止时流过的很微小的电流

跨导

输入电容

输出电容

转移电容Ciss = Cgs +CgdCoss = Cds +Cgd

Cres =Cgd动态特性乯

开通延迟时间

关断延迟时间

下降时间

栅极存储电荷

栅源电荷

栅漏电荷

漏源二极管电流

最大漏源二极管正向电流

漏源二极管正向压降

反向恢复电荷

注释丗

1、重复等级丗脉冲宽度受最大结温的限制

2、L = 1.16mH, IAS = 18A, VDD = 50V, RG = 25

？, Starting TJ = 25°C

3. ISD ≤ 18A, di/dt ≤ 300A/µs, VDD ≤ BVDSS,

Starting TJ = 25°C

4、脉冲测试丗脉宽≤300us•C工作循环≤2%

5、根本上取决于操作温度转换特性乯

合集下载

IRF840B参数

IRF840B参数

Document Number: S-81290-Rev. B, 16-Jun-081 Power MOSFETIRF840, SiHF840Vishay SiliconixFEATURES•Dynamic dV/dt Rating•Repetitive Avalanche Rated•Fast Switching•Ease of Paralleling•Simple Drive Requirements•Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).c.ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.d.1.6 mm from case.PRODUCT SUMMARYVDS (V)500RDS(on) (Ω)VGS = 10 V 0.85Qg (Max.) (nC)63Qgs (nC)9.3Qgd (nC)32ConfigurationSingleN-Channel MOSFETGDSTO-220GDSAvailableRoHS*COMPLIANTORDERING INFORMATIONPackageTO-220Lead (Pb)-freeIRF840PbFSiHF840-E3 SnPbIRF840SiHF840ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise notedARAMETER SYMBOLLIMITUNITDrain-Source Voltage VDS500VGate-Source VoltageVGS ± 20 V Continuous Drain CurrentVGS at 10 VTC = 25 °C ID8.0ATC = 100 °C 5.1Pulsed Drain CurrentaIDM 32Linear Derating Factor1.0W/°C Single Pulse Avalanche EnergybEAS 510mJ Repetitive Avalanche CurrentaIAR 8.0A Repetitive Avalanche EnergyaEAR13mJ Maximum Power DissipationTC = 25 °C PD125W Peak Diode Recovery dV/dtcdV/dt 3.5V/ns Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150 °C Soldering Recommendations (Peak Temperature)for 10 s300dMounting Torque6-32 or M3 screw10 lbf · in1.1N · m* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 910702

74F648LCQB中文资料

74F648LCQB中文资料

54F󰁋74F646

󰀣

74F646B

󰀣

54F󰁋74F648

Octal

Transceiver󰁋Register

with

TRI-STATE

Outputs

December1994

54F󰁋74F646󰀣74F646B󰀣54F󰁋74F648

OctalTransceiver󰁋RegisterwithTRI-STATE󰀄Outputs

GeneralDescription

ThesedevicesconsistofbustransceivercircuitswithTRI-STATE󰀷D-typeflip-flops󰀷andcontrolcircuitryarrangedformultiplexedtransmissionofdatadirectlyfromtheinputbusorfromtheinternalregisters󰀟DataontheAorBbuswillbeclockedintotheregistersastheappropriateclockpingoestoahighlogiclevel󰀟ControlGanddirectionpinsareprovid-edtocontrolthetransceiverfunction󰀟Inthetransceivermode󰀷datapresentatthehighimpedanceportmaybestoredineithertheAortheBregisterorinboth󰀟Theselectcontrolscanmultiplexstoredandreal-time(transparentmode)data󰀟ThedirectioncontroldetermineswhichbuswillreceivedatawhentheenablecontrolGisActiveLOW󰀟Intheisolationmode(controlGHIGH)󰀷AdatamaybestoredintheBregisterand󰁋orBdatamaybestoredintheAregis-ter󰀟Features

单管正激变换器参数确定

单管正激变换器参数确定

单管正激变换器参数确定

第⼆章 ⽅案的确定2.1 变换器的设计指标

2.1.1 正激变换器的设计指标

输⼊电压：DC41V ～DC51V

输出电压：DC12V

输出电流：5A

效率: η≥80%

电压调整率：Su ≤1.5%

负载调整率：S I ≤1.5%2.1.2 辅助电源（反激）的设计指标

输⼊电压：DC41V ～DC51V

输出电压：DC17V

输出电流：0.5A

效率: η≥87%

第三章 正激电路设计

这⾥UC3844的振荡器选择R T =R 8=12k Ω,C T =C 19=1000PF ，则KHZ C R f T T osc 15010100010128.18.112

3===- (3-1) 所以6脚的输出频率（驱动频率）为：

KHZ f f osc 752

1== (3-2) 3.3 主电路设计

主电路的设计主要包括变压器、电感和MOS 管的设计。3.3.1 主电路中变压器的设计

变压器是利⽤互感应实现能量或信号传输的器件。在开关电源主电路中，变压器⽤于输⼊输出之间隔离及电压变换。开关电源中使⽤磁性元件⽐较多，这其中包括作为开关电源核⼼的⾼频功率变压器、驱动变压器、电流互感器、低压辅助电源变压器以及各种滤波电感等，通常把这些统称为电⼦变压器，他们是电⼒电⼦电路中储能、转换以及隔离所必备的元件。磁性元器件在整个的开关电源中所占的⽐重很⼤，对于开关电源的质量、体积、成本以及效率都有很显著的影响，特别是⾼频功率变压器，它对于整个开关电源的性能更是有着举⾜轻重的影响[16]。

⾼频变压器具有电压变化、电⽓隔离和能量传输三项主要功能，是开关电源

的核⼼部件，它的设计和计算也是最复杂的。在能量传输⽅⾯，⾼频变压器有两种⽅式:⼀是变压器传输⽅式，即加在⼀次绕组上的电压，在磁⼼中产⽣了磁通变化，使⼆次绕组产⽣感应电压，从⽽达到使能量从变压器的⼀次侧传输到⼆次侧的⽬的;另⼀种是电感器传输⽅式，即在⼀次绕组上施加电压，会产⽣励磁电流并且使磁⼼磁化，并将电能转变成磁能存储起来，⽽后通过去磁可以使⼆次绕组产⽣感应电压，从⽽达到将磁能变换为电能释放给负载的效果,下⾯就是变压器设计的过程[17]。1.铁芯材料的选取

IR国际整流公司大功率场效应管参数76-500V

IR国际整流公司大功率场效应管参数76-500V

PartPart StatusPackageVBRDSS (V)VGs Max (V)Circuit

IRFH7184Active and PreferredPQFN 5 x 6 B/E10020Discrete

IRFH7194Active and PreferredPQFN 5 x 6 B/E10020Discrete

IRFH7188Active and PreferredPQFN 5 x 6 B/E10020Discrete

IRFH7191Active and PreferredPQFN 5 x 6 B/E10020Discrete

IRF7171MActive and PreferredDirectFET MN10020Discrete

IRF100B202Active and PreferredTO-220AB10020Discrete

IRF5801PBF-1ActiveTSOP-6 (Micro 6)20030Discrete

IRF7473PBF-1ActiveSO-810020Discrete

IRF7493PBF-1ActiveSO-88020Discrete

IRLML0100TRPBF-1ActiveMicro 3/ SOT-2310016Discrete

IRFH7190Active and PreferredPQFN 5 x 6 B/E10020Discrete

IRFH7185Active and PreferredPQFN 5 x 6 B/E10020Discrete

IRLS4030Active and PreferredD2-Pak10016Discrete

IRFHM3911Active and PreferredPQFN 3.3 x 3.310020Discrete

IRFS4321-7PActive and PreferredD2-Pak 7-Lead15030Discrete

IRF3315SActiveD2-Pak15020Discrete