RF LDMOS Wideband IntegratedPower AmplifiersThe MW7IC2240N wideband integrated circuit is designed with on-chipmatching that makes it usable from 2000 to 2200 MHz. This multi-stagestructure is rated for 24 to 32Volt operation and covers all typical cellular basestation modulation formats including TD-SCDMA.Typical Performance•Typical Single-Carrier W-CDMA Performance: V DD = 28 Volts,I DQ1 = 90 mA, I DQ2 = 420 mA, P out = 4 Watts Avg., Full Frequency Band(2110-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @0.01% Probability on CCDF.Power Gain — 30 dBPower Added Efficiency — 14%ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40Watts CWOutput Power•P out @ 1 dB Compression Point = 40 Watts CW•Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 WattsCW P out.Features•Characterized with Series Equivalent Large-Signal Impedance Parametersand Common Source Scattering Parameters•On-Chip Matching (50Ohm Input, DC Blocked, >3 Ohm Output)•Integrated Quiescent Current Temperature Compensation with Enable/Disable Function(1)•Integrated ESD Protection•225°C Capable Plastic Package•RoHS Compliant•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.1.Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Controlfor the RF Integrated Circuit Device Family. Go to /rf.Select Documentation/Application Notes - AN1977 or AN1987.Document Number: MW7IC2240NRev. 0, 11/2007 Freescale SemiconductorTechnical Data2RF Device DataFreescale SemiconductorMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +65Vdc Gate-Source Voltage V GS -0.5, +5Vdc Operating VoltageV DD 32, +0Vdc Storage Temperature Range T stg -65 to +150°C Case Operating Temperature T C 150°C Operating Junction Temperature (1,2)T J 225°C Input PowerP in20dBmTable 2. Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance, Junction to Case4 W Avg.(P out = 3.95 W Avg., Case Temperature = 68°C)Stage 1, 28 Vdc, I DQ1 = 90 mAStage 2, 28 Vdc, I DQ2 = 420 mA 40 W Avg.(P out = 39.4 W Avg., Case Temperature = 80°C)Stage 1, 28 Vdc, I DQ1 = 90 mAStage 2, 28 Vdc, I DQ2 = 420 mAR θJC3.91.33.21.2°C/WTable 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1B (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)II (Minimum)1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.3.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.(continued)MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR13RF Device DataFreescale SemiconductorTable 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitStage 1 — Off CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 1.5 Vdc, V DS = 0 Vdc)I GSS——1μAdcStage 1 — On Characteristics Gate Threshold Voltage(V DS = 10 Vdc, I D = 23 μAdc)V GS(th) 1.22 2.7Vdc Gate Quiescent Voltage(V DD = 28 Vdc, I D = 90 mAdc)V GS(Q)— 2.9—Vdc Fixture Gate Quiescent Voltage(V DD = 28 Vdc, I D = 90 mAdc, Measured in Functional Test)V GG(Q)9.51316.5VdcStage 1 — Dynamic Characteristics (1)Input Capacitance(V DS = 28 Vdc, V GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)C iss—50—pFStage 2 — Off CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 1.5 Vdc, V DS = 0 Vdc)I GSS——1μAdcStage 2 — On Characteristics Gate Threshold Voltage(V DS = 10 Vdc, I D = 150 μAdc)V GS(th) 1.22 2.7Vdc Gate Quiescent Voltage(V DD = 28 Vdc, I D = 420 mAdc)V GS(Q)— 2.8—Vdc Fixture Gate Quiescent Voltage(V DD = 28 Vdc, I D = 420 mAdc, Measured in Functional Test)V GG(Q)79.812.5Vdc Drain-Source On-Voltage (V GS = 10 Vdc, I D = 1 Adc)V DS(on)0.20.391.2VdcStage 2 — Dynamic Characteristics (1)Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss —0.67—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss—205—pF1.Part internally matched both on input and output.(continued)4RF Device DataFreescale SemiconductorMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1Table 5. Electrical Characteristics (T C = 25°C unless otherwise noted) (continued)CharacteristicSymbolMinTypMaxUnitFunctional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ1 = 90 mA, I DQ2 = 420 mA,P out = 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5 MHz Offset.Power GainG ps 283033dB Power Added Efficiency PAE 1214—%Adjacent Channel Power Ratio ACPR —-50-46dBc Input Return LossIRL —-16-12dB Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ1 = 90 mA, I DQ2 = 420 mA, 2110-2170 MHzP out @ 1 dB Compression Point, CWP1dB —40—W Video Bandwidth @ 40 W PEP P out where IM3 = -30 dBc (Tone Spacing from 100 kHz to VBW)ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)VBW—10—MHzGain Flatness in 60 MHz Bandwidth @ P out = 4 W Avg.G F —0.1—dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ P out = 40 W CW Φ— 1.08—°Average Group Delay @ P out = 40 W CW, f = 2140 MHz Delay — 1.98—ns Part-to-Part Insertion Phase Variation @ P out = 40 W CW,f = 2140 MHz, Six Sigma Window ΔΦ—18.3—°Gain Variation over Temperature (-30°C to +85°C)ΔG —0.05—dB/°C Output Power Variation over Temperature (-30°C to +85°C)ΔP1dB—0.004—dBm/°CMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR15RF Device DataFreescale SemiconductorZ80.204″ x 0.083″ Microstrip Z90.273″ x 0.083″ Microstrip Z100.176″ x 0.083″ Microstrip Z110.364″ x 0.083″ Microstrip Z12, Z130.564″ x 0.083″ MicrostripPCBArlon Cuclad 250GX-0300-55-22, 0.030″, εr = 2.5Z1 2.197″ x 0.083″ MicrostripZ20.016″ x 0.083″ x 0.055″ Taper Z30.106″ x 0.055″ Microstrip Z40.409″ x 0.322″ Microstrip Z50.161″ x 0.322″ Microstrip Z60.254″ x 0.322″ Microstrip Z70.388″ x 0.123″ MicrostripFigure 3. MW7IC2240NR1(GNR1)(NBR1) Test Circuit SchematicTable 6. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer C18.2 pF Chip Capacitor ATC100B8R2BT250XT ATC C2, C160.4 pF Chip Capacitors ATC700B0R4BT500XT ATC C3, C14, C154.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L Murata C4, C5, C19, C20, C21, C2210 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C6, C7, C10, C115.6 pF Chip Capacitors ATC100B5R6BT250XT ATC C8, C90.3 pF Chip Capacitors ATC700B0R3BT500XT ATC C12, C130.1 μF Chip Capacitors C1206C104K5RAC Kemet C170.6 pF Chip Capacitor ATC100B0R6BT250XT ATC C186.8 pF Chip CapacitorATC100B6R8BT250XT ATC C23470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois R1, R210 K Ω, 1/4 W Chip ResistorsCRCW12061001FKEAVishay6RF Device DataFreescale SemiconductorMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1Figure 4. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component LayoutMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSP out , OUTPUT POWER (WATTS) PEP10321302826Figure 7. Two-Tone Power Gain versusOutput Power @ I DQ1 = 90 mA G p s , P O W E R G A I N (d B )312729100P out , OUTPUT POWER (WATTS) PEP101Figure 8. Two-Tone Power Gain versusOutput Power @ I DQ2 = 420 mA100338RF Device DataFreescale SemiconductorMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1TYPICAL CHARACTERISTICSI N T E R M O D U L A T I O N D I S T O R T I O N (d B c )I M D , T H I R D O R D E RP out , OUTPUT POWER (WATTS) PEPFigure 11. Intermodulation Distortion Products versus Output PowerI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )−6010−20−401001−10−30−501100TWO−TONE SPACING (MHz)Figure 12. Intermodulation Distortion Products versus Tone Spacing102254P in , INPUT POWER (dBm)49474544111248461314Figure 13. Pulsed CW Output Power versusInput Power P o u t , O U T P U T P O W E R (d B m )50515253151617181920214320385101323028302010P out , OUTPUT POWER (WATTS) CWFigure 14. Power Gain and Power Added Efficiency versus CW Output PowerG p s , P O W E R G A I N (d B )P A E , P O W E R A D D E D E F F I C I E N C Y (%)3634100504026242245352515MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR19RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSP out , OUTPUT POWER (WATTS) CWFigure 15. Power Gain versus Output Power80320602510G p s , P O W E R G A I N (d B )2940283027263120305070222026362060343230f, FREQUENCY (MHz)Figure 16. Power Gain versus FrequencyG p s , P O W E R G A I N (d B )21002140218020802120216022002825010990T J , JUNCTION TEMPERATURE (°C)Figure 17. MTTF versus Junction TemperatureThis above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 4 W Avg., and PAE = 14%.MTTF calculator available at http://rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.108107105110130150170190M T T F (H O U R S )21023010610RF Device DataFreescale SemiconductorMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1W-CDMA TEST SIGNAL100.00011000PEAK−TO−AVERAGE (dB)Figure 18. CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal1010.10.010.0012468P R O B A B I L I T Y (%)−60−110−10(d B )−20−30−40−50−70−80−90−1007.21.85.43.6−1.8−3.6−5.4−99f, FREQUENCY (MHz)Figure 19. Single-Carrier W-CDMA Spectrum−7.2Z o = 50 ΩZ inZ loadf = 2220 MHzf = 2060 MHzf = 2060 MHzf = 2220 MHzV DD = 28 Vdc, I DQ1 = 90 mA, I DQ2 = 420 mA, P out = 4 W Avg.fMHz Z in W Z load W 206048.171 + j6.940 6.868 - j9.687208052.454 + j11.553 6.432 - j8.942210055.468 + j8.729 6.051 - j8.216212056.312 + j12.000 5.729 - j7.545214058.860 + j9.463 5.444 - j6.869216057.596 + j11.427 5.193 - j6.201218059.603 + j10.690 4.958 - j5.578220056.867 + j10.012 4.743 - j4.969222058.144 + j9.8054.577 - j4.353Z in=Device input impedance as measured from gate to ground.Z load =Test circuit impedance as measured from drain to ground.Figure 20. Series Equivalent Input and Load ImpedanceZinZloadOutput Matching NetworkTable 7. Common Source S-Parameters (V DD = 28 V, I DQ1 = 90 mA, I DQ2 = 420 mA, T C = 255C, 50 Ohm System)S11S21S12S22 fMHz|S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ15000.4521340.3567.810.001-1080.979160 15500.4071170.757-7.80.000-67.70.969157 16000.35496.5 1.430-310.000-65.80.955154 16500.31685.1 2.330-52.10.001-27.10.935151 17000.27968 3.690-73.60.001-43.40.909148 17500.22249.5 5.800-93.30.002-21.90.878143 18000.14030.49.570-1130.003-24.80.833137 18500.04621.917.000-1370.004-33.70.737124 19000.09413533.600-1730.007-41.80.47691.7 19500.23856.458.3001240.009-86.40.396-79.7 20000.254-29.247.80059.50.006-1180.873-149 20500.241-84.134.30022.90.004-1220.927-171 21000.252-12027.700-3.980.004-1250.911-179 21500.201-14223.900-28.20.003-1280.891177 22000.174-16221.100-51.80.003-1300.878175 22500.14816818.800-75.90.003-1310.872175 23000.13510315.800-1000.003-1390.882175 23500.19735.412.600-1180.003-1550.906174 24000.244 1.7311.100-1320.002-1560.919173 24500.291-11.110.400-1470.002-1570.926171 25000.340-199.750-1630.002-1470.933170 25500.391-26.99.230-1790.001-1500.938169 26000.435-35.28.7601640.001-1440.942168 26500.475-44.48.2901460.001-1370.945166 27000.455-467.0501290.001-90.20.950166 27500.535-60.2 6.6901120.001-1060.955164 28000.571-71.2 5.98095.10.001-1030.955163 28500.598-82 5.17078.50.002-96.50.954162 29000.623-92.9 4.37063.10.002-1030.955162 29500.643-102 3.69048.70.002-96.20.954161 30000.668-109 3.10035.40.002-1060.951161 30500.681-116 2.58022.70.002-1070.952161 31000.694-121 2.130110.002-87.90.957160 31500.712-124 1.760-0.0570.002-96.10.959160 32000.724-127 1.440-10.90.002-99.60.959160 32500.726-130 1.170-21.10.002-82.40.962159 33000.705-1300.928-28.70.003-66.90.963159 33500.743-1320.780-370.003-77.20.959158 34000.748-1350.652-44.30.003-880.955157 34500.753-1370.555-50.30.003-78.60.955156Table 7. Common Source S-Parameters (V DD = 28 V, I DQ1 = 90 mA, I DQ2 = 420 mA, T C = 255C, 50 Ohm System) (continued)S11S21S12S22 fMHz|S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ35000.759-1400.486-56.10.004-81.10.954155 35500.765-1440.440-62.40.004-820.946154 36000.770-1480.401-69.70.004-85.90.941153 36500.774-1530.370-77.40.005-96.40.941151 37000.780-1590.338-85.10.006-94.90.940150 37500.795-1640.306-93.20.006-99.30.933148 38000.810-1700.273-1010.008-1100.928146 38500.821-1750.239-1070.008-1130.934145 39000.839-1780.207-1110.008-1120.936144 39500.8551790.178-1140.008-1170.927144 40000.8621760.156-1160.008-1230.935144PACKAGE DIMENSIONSMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR121RF Device Data Freescale Semiconductor22RF Device Data Freescale SemiconductorMW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR123RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATIONRefer to the following documents to aid your design process.Application Notes•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages•AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages•AN1955: Thermal Measurement Methodology of RF Power Amplifiers•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins•EB212: Using Data Sheet Impedances for RF LDMOS DevicesREVISION HISTORYThe following table summarizes revisions to this document.RevisionDate Description0Nov. 2007•Initial Release of Data SheetInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners.© Freescale Semiconductor, Inc. 2007. All rights reserved.How to Reach Us:Home Page:Web Support:/supportUSA/Europe or Locations Not Listed:Freescale Semiconductor, Inc.Technical Information Center, EL5162100 East Elliot RoadTempe, Arizona 85284+1-800-521-6274 or +1-480-768-2130/supportEurope, Middle East, and Africa:Freescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen, Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)/supportJapan:Freescale Semiconductor Japan Ltd.HeadquartersARCO Tower 15F1-8-1, Shimo-Meguro, Meguro-ku,Tokyo 153-0064Japan0120 191014 or +81 3 5437 9125support.japan@Asia/Pacific:Freescale Semiconductor Hong Kong Ltd.Technical Information Center2 Dai King StreetTai Po Industrial EstateTai Po, N.T., Hong Kong+800 2666 8080@For Literature Requests Only:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171-800-441-2447 or 303-675-2140Fax: 303-675-2150LDCForFreescaleSemiconductor@。
