KC19B10.001NPS;中文规格书,Datasheet资料

J 0.64 1.01 K 2.54 BSC
M 4.32 4.82 N 1.14 1.39
Q 0.35 0.56 R 2.29 2.79
Inches Min. Max.
0.500 0.550 0.580 0.630
0.390 0.420 0.139 0.161
0.230 0.270 0.100 0.125
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 20N60 B VCES = 600 V
IXDP 20N60 BD1 IC25
= 32 A
V = CE(sat) typ 2.2 V
C
C
TO-220 AB
1-4
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IXDP 20N60 B IXDP 20N60 BD1
Symbol
Cies C
oes
Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
easy paralleling q MOS input, voltage controlled q optional ultra fast diode q International standard package
Advantages
q Space savings q High power density
80
RG = 22W
A TJ = 125°C ICM 60

ąFEATURESFully Differential High Impedance Voltage SensingAccurate Current Amplifier for PrecisePACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC1907J OBSOLETE CDIP J16TBD Call TI Call TI UC1907J883B OBSOLETE CDIP J16TBD Call TI Call TI UC1907L OBSOLETE LCCC FK20TBD Call TI Call TI UC1907L883B OBSOLETE LCCC FK20TBD Call TI Call TIUC2907DW ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC2907DWG4ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC2907DWTR ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC2907DWTRG4ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEAR UC2907J OBSOLETE CDIP J16TBD Call TI Call TIUC2907N ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg TypeUC2907NG4ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg TypeUC3907DW ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC3907DWG4ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC3907DWTR ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC3907DWTRG4ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEAR UC3907J OBSOLETE CDIP J16TBD Call TI Call TIUC3907N ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg TypeUC3907NG4ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die and package,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak soldertemperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.TAPE AND REELINFORMATION*All dimensionsare nominalDevicePackage Type Package Drawing Pins SPQReel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant UC2907DWTR SOIC DW 162000330.016.410.8510.8 2.712.016.0Q1UC3907DWTRSOICDW162000330.016.410.8510.82.712.016.0Q1PACKAGE MATERIALS INFORMATION29-Jul-2008分销商库存信息:TIUC3907DW UC2907DW UC3907NUC3907DWTR UC2907DWTR UC2907DWTRG4 UC3907NG4UC3907DWG4UC2907NUC2907NG4UC2907DWG4。

• Automotive • Power Management • Battery Chargers
DESCRIPTION
The INA200-Q1, INA201-Q1, and INA202-Q1 are high-side current-shunt monitors with voltage output. The INA200-Q1–INA202-Q1 can sense drops across shunts at common-mode voltages from –16V to 80V. The INA200-Q1–INA202-Q1 are available with three output voltage scales: 20V/V, 50V/V, and 100V/V, with up to 500kHz bandwidth.
Copyright © 2011, Texas Instruments Incorporated
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INA200-Q1 INA201-Q1 INA202-Q1
SBOS558 – APRIL 2011

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
The INA200-Q1, INA201-Q1, and INA202-Q1 also incorporate an open-drain comparator and internal reference providing a 0.6V threshold. External dividers are used to set the current trip point. The comparator includes a latching capability, which can be made transparent by grounding (or leaving open) the RESET pin.

FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
(96-136-B93)
229
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Transistors
FPackaging specifications and hFE hFE values are classified as follows :
stors
Low-frequency Transistor (*80V, *0.5A)
2SB1198K
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm)
Appendix1-Rev1
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分销商库存信息:
ROHM 2SB1198KT146R 2SB1198KT146Q
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.