IXFB60N80P

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© 2006 IXYS All rights reservedDS99560E(02/06)PolarHVTM HiPerFETPower MOSFETVDSS=800V

ID25=60ARDS(on)

≤140mΩ

trr

≤250ns

N-Channel Enhancement Mode

Avalanche RatedFast Intrinsic Diode

FeatureslInternational standard packages

lFast recovery diode

lUnclamped Inductive Switching (UIS)

ratedlLow package inductance

-easy to drive and to protect

AdvantageslPlus 264TM package for clip or spring

lSpace savings

lHigh power density

SymbolTest ConditionsCharacteristic Values(TJ = 25°C, unless otherwise specified) Min. Typ.Max.

BVDSSVGS= 0 V, ID = 3 mA800VVGS(th)VDS= VGS, ID = 8 mA3.05.0VIGSSVGS= ±30 VDC, VDS = 0±200nAIDSSVDS= VDSS25µA

VGS= 0 VTJ = 125°C3000µA

RDS(on)VGS= 10 V, ID = 0.5 ID25, Note 1140mΩ

SymbolTest ConditionsMaximum RatingsVDSSTJ= 25°C to 150°C800VVDGRTJ= 25°C to 150°C; RGS = 1 MΩ800VVGSSContinuous±30VVGSMTransient±40VID25TC= 25°C60AIDMTC= 25°C, pulse width limited by TJM150AIARTC= 25°C30A

EARTC= 25°C100mJ

EASTC= 25°C5J

dv/dtIS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,20V/nsTJ≤ 150°C, RG = 2 Ω

PDTC= 25°C1250WTJ-55 ... +150°C

TJM150°CTstg-55 ... +150°C

TL1.6 mm (0.062 in.) from case for 10 s300 °CTSOLDPlastic body for 10 s260 °C

FCMounting force30..120/7.5...2.7 N/lbWeight10g

IXFB 60N80PG = GateD = DrainS = SourceTAB = Drain

PLUS264TM (IXFB)(TAB)G

DS IXYS reserves the right to change limits, test conditions, and dimensions.

IXFB 60N80PSymbolTest ConditionsCharacteristic Values(TJ = 25°C, unless otherwise specified)Min.Typ.Max.

gfsVDS= 20 V; ID = 0.5 ID25, Note 13567SCiss 18nFCossVGS = 0 V, VDS = 25 V, f = 1 MHz1200pF

Crss44pF

td(on)36nstrVGS= 10 V, VDS = 0.5 VDSS, ID =0.5 ID2529nstd(off)RG= 1 Ω (External)110ns

tf26ns

Qg(on)250nCQgsVGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID2590nCQgd78nC

RthJC0.10°C/WRthCS0.13°C/W

Source-Drain DiodeCharacteristic Values(TJ = 25°C, unless otherwise specified)SymbolTest ConditionsMin.Typ.Max.

ISVGS = 0 V60AISMRepetitive150AVSDIF = IS, VGS = 0 V, Note 11.5VtrrIF = 25A, -di/dt = 100 A/µs250nsQRMVR = 100V0.6µCIRM6.0A

PLUS264TM (IXFB) OutlineNotes:1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,585 one or moreof the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6924,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636,771,478 B2© 2006 IXYS All rights reserved

IXFB 60N80PFig. 1. Output Characteristics@ 25ºC

0510152025303540455055600123456789VDS - VoltsID - AmperesVGS = 10V 7V6V5VFig. 2. Extended Output Characteristics@ 25ºC020406080100120

036912151821242730VDS - Volts

ID - AmperesVGS = 10V 7V

5V6V

Fig. 3. Output Characteristics@ 125ºC05101520253035404550556002468101214161820VDS - VoltsID - AmperesVGS = 10V 7V6V5VFig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature

0.40.81.21.622.42.83.2

-50-250255075100125150TJ - Degrees Centigrade

RDS(on) - Normalized VGS = 10V I D = 60AI D = 30A

Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current

0.811.21.41.61.822.22.42.62.8

020406080100120ID - Amperes

RDS(on) - Normalized VGS = 10V TJ = 125ºC

TJ = 25ºC

Fig. 6. Maximum Drain Current vs. Case Temperature

010203040506070

-50-250255075100125150TJ - Degrees Centigrade

ID - Amperes IXYS reserves the right to change limits, test conditions, and dimensions.

IXFB 60N80PFig. 7. Input Admittance

0102030405060708044.254.54.7555.255.55.7566.256.56.75VGS - VoltsID - AmperesTJ = 125ºC 25ºC - 40ºCFig. 8. Transconductance0102030405060708090100110120130

01020304050607080ID - Amperes

g f s - SiemensTJ = - 40ºC 25ºC 125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0204060801001201401601800.30.40.50.60.70.80.911.11.21.31.4VSD - VoltsIS - AmperesTJ = 125ºCTJ = 25ºCFig. 10. Gate Charge012345678910

020406080100120140160180200220240260QG - NanoCoulombs

VGS - Volts VDS = 400V I D = 30A I G = 10mA

Fig. 11. Capacitance101001,00010,000100,0000510152025303540VDS - VoltsCapacitance - PicoFarads f = 1 MHz CissCrssCossFig. 12. Maximum Transient Thermal Resistance0.0010.0100.1001.000

0.00010.0010.010.1110Pulse Width - Seconds

R(th)JC - ºC / W