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APM4953K中文资料

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Dual P-Channel Enhancement Mode MOSFETCopyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.

APM4953KFeatures

Applications• -30V/-4.9A ,

RDS(ON)=53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V• Super High Dense Cell Design

• Reliable and Rugged

• SOP-8 Package

• Lead Free Available (RoHS Compliant)

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered Systems

Pin Description

Ordering and Marking InformationP-Channel MOSFETAPM4953Handling CodeTemp. RangePackage CodePackage Code K : SOP-8Operating Junction Temp. Range C : -55 to 150°CHandling Code TU : Tube TR : Tape & ReelLead Free Code L : Lead Free Device Blank : Original Device

APM4953 K :APM4953XXXXXXXXXX - Date Code

Lead Free Code

G1S1S2G2

D1D1D2

D2

Top View of SOP − 8

D2G2S2D2(4)(3)(5)(6)D1G1S1D1(2)(1)

(7)(8)

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-

tion at lead-free peak reflow temperature.

元器件交易网www.cecb2b.comCopyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw2

APM4953KAbsolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol Parameter Rating Unit VDSS Drain-Source Voltage

-30

VGSS Gate-Source Voltage

±25

V

ID* Continuous Drain Current -4.9 IDM* Pulsed Drain Current VGS=-10V -20 A

IS* Diode Continuous Forward Current -2 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150

°C

TA=25°C 2 PD* Power Dissipation for Single Operation

TA=100°C 0.8

W

RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W

Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.

APM4953K Symbol Parameter Test Condition Min. Typ. Max. Unit

Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA -30 V VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-4.9A 53 60 RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-3.6A 80 95

mΩ

VSDa Diode Forward Voltage ISD=-1.7A, VGS=0V -0.7 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 22.6 30 Qgs Gate-Source Charge 4.7 Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-4.9A 2 nC

元器件交易网www.cecb2b.comCopyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw3

APM4953KElectrical Characteristics (Cont.) (T

A = 25°C unless otherwise noted)

APM4953K Symbol Parameter Test Condition Min. Typ. Max. Unit

Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 11 Ω

Ciss Input Capacitance 1260 Coss Output Capacitance 400 Crss Reverse Transfer Capacitance VGS=0V, VDS=-25V, Frequency=1.0MHz 220 pF

td(ON) Turn-on Delay Time 10 18 Tr Turn-on Rise Time 15 20 td(OFF) Turn-off Delay Time 22 38 Tf Turn-off Fall Time VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω 15 25

ns

Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.

元器件交易网www.cecb2b.comCopyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw4

APM4953K1E-41E-30.010.1110301E-30.010.112Mounted on 1in2 padRθJA : 62.5 oC/W

0.010.020.050.10.2Single Pulse

Duty = 0.5

Typical Characteristics-ID - Drain Current (A)Drain Current Tj - Junction Temperature (°C)Safe Operation Area-VDS - Drain - Source Voltage (V)Thermal Transient ImpedanceSquare Wave Pulse Duration (sec)Power Dissipation

Ptot - Power (W)

Tj - Junction Temperature (°C)

-ID - Drain Current (A)0204060801001201401600.00.51.01.52.02.5TA=25oC 0204060801001201401600.0

1.53.04.56.0TA=25oC,VG=-10V

0.010.11101000.010.1110100300µsRds(on) Li

mit

1sTA=25oC

10ms1ms100msDC Normali

z

ed Transient Thermal Resistance

元器件交易网www.cecb2b.com

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AK5358AET中文资料

AK5358AET中文资料


FEATURES
Linear Phase Digital Anti-Alias Filtering
Single-ended Input
Digital HPF for DC-Offset cancel
S/(N+D): 92dB
DR:
102dB
S/N:
102dB
Sampling Rate Ranging from 8kHz to 96kHz
- Digital Power Supply Pin, 2.7 ∼ 5.5V
- Digital Ground Pin
Audio Serial Data Output Pin O
“L” Output at Power-down mode.
Output Channel Clock Pin I/O
“L” Output in Master Mode at Power-down mode.
Classification Analog
AINL AINR
Pin Name
Setting This pin should be open. This pin should be open.
MS0511-E-01 -3-
2007/04
元器件交易网
[AK5358A]
ABSOLUTE MAXIMUM RATINGS
-
Analog Input Voltage (AINL, AINR, CKS1 pins)
VINA
−0.3
Digital Input Voltage
(Note 3)
VIND
−0.3
Ambient Temperature (powered applied)
PT4953.

PT4953.

VDS= -30VFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOM Package DimensionsMillimeter MillimeterREF. Min. Max. REF. Min. Max.A 5.80 6.20 M 0.10 0.25B 4.80 5.00 H 0.31 0.51C 3.80 4.00 L 1.35 1.75D 0° 8° J 0.375 REF.E 0.40 1.27 K45°F0.17 0.25 G1.27 TYP .Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)ParameterSymbolLimitUnitDrain-Source Voltage V DS -30Gate-Source VoltageV GS ± 20 VContinuous Drain Current I D -5.3Pulsed Drain Current 1)I DM -20ATA = 25o C 2.5Maximum Power DissipationTA = 75o C P D1.2 W Operating Junction and Storage Temperature RangeT J , T stg -55 to 150 oCJunction-to-Ambient Thermal Resistance (PCB mounted) 2)R θJA62.5oC/WNotesPulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t v 5 sec.1)2) RDS(ON), Vgs@-10V, Ids@-4.5A = 63m Ω RDS(ON), Vgs@-4.5V, Ids@-3.6A = 90m Ω-30V P-Channel Enhancement Mode MOSFETPT4953ELECTRICAL CHARACTERISTICSParameter Test ConditionStaticDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = -250uA -30VDrain-Source On-State Resistance R DS(on)V GS = -4.5V, I D = -3.6A 70 90 Drain-Source On-State ResistanceR DS(on)V GS = -10V, I D = -4.5A 50 63 m Ω Gate Threshold VoltageV GS(th)V DS =V GS , I D = -250uA -1 -3VZero Gate Voltage Drain Current 0 I DSS V DS = -24V, V GS = 0V -1 uA Gate Body Leakage I GSS V GS = ± 16V, V DS = 0V± 100 nAForward Transconductanceg fs V DS = -10V, I D = -5.3A10 SDynamic 1)Total Gate Charge Q g28 Gate-Source Charge Q gs 3 Gate-Drain Charge Q gd V DS =-15V, I D = -5.3A V GS = -10V7 nCTurn-On Delay Time t d(on) 9 Turn-On Rise Time t r 15 Turn-Off Delay Time t d(off) 75 Turn-Off Fall Time t f V DD = -15V,I D = -1A, V GEN = -10V R G = 6Ω40 ns Input Capacitance C iss Output CapacitanceC oss Reverse Transfer CapacitanceC rss V DS = -15V, V GS = 0V f = 1.0 MHzpF Source-Drain DiodeMax. Diode Forward CurrentI S-2.6 A Diode Forward VoltageV SDI S = -2.6A, V GS = 0V-1.3 VPulse test: pulse width <= 300us, duty cycle<= 2%SymbolMin.Max.Unit Typ.1)745 440 120, R L = 15Ω 1.7PT4953PT4953。

2SA1952中文资料(rohm)中文数据手册「EasyDatasheet - 矽搜」

2SA1952中文资料(rohm)中文数据手册「EasyDatasheet - 矽搜」


VCE = -2V,
VCE = -10V, f=30MH Z VCB = -10V, f = 1MHz
IC = -3A
IE = 0.5A
IE = 0A
IC= -3A IB1= -0.15A
IB2=0.15A VCC ⋍ -30V
120
-
270
-
40
-
-
-
-
80
-
MHz
-
130
-
pF
-
-
0.3
ms
-
-
1.5
ms
-
-
0.3
ms
lh FE 排名类别 Rank hFE
Q 120至270
.
2013.07 - Rev.B的
芯片中文手 特性曲线（大 图1地面发射器传输特性
[A]
C
集电极电流：我
= 25°C) 图2典型的输出特性
[A]
C
集电极电流：我
-60
-
-
V
-100
-
-
V
-5
-
-
V
-
-
-10
mA
发射极截止电流
IEBO
VEB = -5V
-
-
-10
mA
集电极 - 发射极
饱和电压
IC = -3A, IB = -0.15A
-
VCE(sat)*1
IC = -4A, IB = -0.2A
-
-
-0.3
V
-
-0.5
V
基极 - 发射
饱和电压
IC = -3A, IB = -0.15A
-0.1
ADM3485中文资料

ADM3485中文资料

common-mode range Data rate options
ADM3483/ADM3488: 250 kbps ADM3485/ADM3490/ADM3491: 10 Mbps Half- and full-duplex options Reduced slew rates for low EMI (ADM3483 and ADM3488) 2 nA supply current in shutdown mode (ADM3483/ADM3485/ADM3491) Up to 32 transceivers on the bus −7 V to +12 V bus common-mode range Specified over the –40°C to +85°C temperature range 8 ns skew (ADM3485/ADM3490/ADM3491) 8-lead SOIC and 14-lead SOIC (ADM3491 only) packages
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700

Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.
Devices with Receiver/Driver Enables— ADM3483/ADM3485/ADM3491............................................ 14 Devices Without Receiver/Driver Enables— ADM3488/ADM3490................................................................ 14 Reduced EMI and Reflections—ADM3483/ADM3488 ....... 14 Low Power Shutdown Mode..................................................... 14 Driver Output Protection.......................................................... 14 Propagation Delay ...................................................................... 14 Typical Applications................................................................... 14 Line Length vs. Data Rate ......................................................... 15 Outline Dimensions ....................................................................... 17 Ordering Guide .......................................................................... 18