AF85N08K中文资料

AF85N08

N-Channel Enhancement Mode Power MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Aug 10, 2005

1/6 󰂄 Features

- Low Gate Charge

- Simple Drive Requirement

- Fast Switching

- RoHS Compliant

- Pb Free Plating Product

󰂄 Product Summary

BV

DSS (V) R

DS(ON) (mΩ) I

D (A)

80 13 75

󰂄 Pin Assignments

3

2

1S

D

G

(TO-263)

S

D

G3

2

1

(TO-220) 󰂄 General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-263 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters. The through-hole version (TO-220) is

available for low-profile applications.

󰂄 Pin Descriptions

Pin Name Description S Source

G Gate D Drain

󰂄 Ordering information

AX 85N08 X X

PNPackageFeature

F :MOSFETK: TO-263Packing

Blank : Tube or Bulk

A : Tape & ReelT: TO-220

󰂄 Block Diagram

S

GD

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AF85N08

N-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw Rev. 1.0 Aug 10, 2005

2/6 󰂄 Absolute Maximum Ratings

Symbol Parameter Rating Units

V

DS Drain-Source Voltage 80 V

V

GS Gate-Source Voltage ±20 V

T

C

=25ºC 75

I

D Continuous Drain Current, V

GS=10V

T

C

=100ºC 48 A

I

DM Pulsed Drain Current (Note 1) 260 A

Total Power Dissipation T

C

=25ºC 138 W

P

D

Linear Derating Factor 1.11 W/ºC

E

AS Single Pulse Avalanche Energy (Note 3) 450 mJ

I

AR Avalanche Current 30 A

T

STG Storage Temperature Range -55 to 150 ºC

T

J Operating Junction Temperature Range -55 to 150 ºC

󰂄 Thermal Data

Symbol Parameter Maximum Units

R

θJC Thermal Resistance Junction-Case Max. 0.9 ºC/W

R

θJA Thermal Resistance Junction- Ambient Max. 62 ºC/W

󰂄 Electrical Characteristics (T

J=25ºC unless otherwise noted)

Limits

Symbol Parameter Test Conditions

Min.Typ. Max.Unit

BV

DSS Drain-Source Breakdown Voltage V

GS=0V, I

D=

1mA 80 - - V

∆BV

DSS/∆T

J Breakdown Voltage Temperature

Coefficient Reference to 25ºC,

I

D=1mA - 0.09 - V/ºC

V

GS=10V, I

D=

45A - - 13

R

DS(ON) Static Drain-Source

On-Resistance (Note 2) V

GS=4.5V, I

D=

25A - - 18 mΩ

V

GS(th) Gate Threshold Voltage V

DS= V

GS, I

D=

250uA 1 - 3 V

g

fs Forward Transconductance V

DS=10V, I

D=

45A - 70 - S

Drain-Source Leakage

Current(T

J=25ºC) V

DS=80V, V

GS=

0V - - 10

I

DSS

Drain-Source Leakage

Current(T

J=150ºC) V

DS=64V, V

GS=

0V - - 100 uA

I

GSS Gate Source Leakage V

GS=

±20V - - ±100nA

Q

g Total Gate Charge (Note 2) - 63 100

Q

gs Gate-Source Charge - 23 -

Q

gd Gate-Drain (“Miller”) Charge I

D=45A

V

DS=64V

V

GS=4.5V - 38 - nC

t

d(on) Turn-On Delay Time (Note 2) - 30 -

t

r Rise Time - 100 -

t

d(off) Turn-Off Delay Time - 144 -

t

f Fall-Time V

DS=40V

I

D=45A

R

G=10Ω, V

GS=10V

R

D=0.89Ω - 173 - nS

C

iss Input Capacitance - 6300 10080

C

oss Output Capacitance - 670 -

C

rss Reverse Transfer Capacitance V

GS=0V

V

DS=25V,

f=1.0MHz - 350 - pF

󰂄 Source-Drain Diode

Symbol Parameter Test Conditions Min.Typ. Max.Unit

V

SD Forward On Voltage (Note 2) I

S=45A, V

GS=

0V - - 1.3 V

t

rr Reverse Recovery Time (Note 2) - 47 - ns

Q

rr Reverse Recovery Charge I

S=20A, V

GS=0V,

dl/dt=100A/µs - 86 - nC

Note 1: Pulse width limited by safe operating area.

Note 2: Pulse width < 300us, duty cycle < 2%.

Note 3: Starting TJ=25oC, VDD=30V, L=1mH, RG=25Ω, IAS=30A. 元器件交易网www.cecb2b.com