SI4172DY中文资料
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Vishay SiliconixSi4172DY
Document Number: 69000
S-82665-Rev. A, 03-Nov-08www.vishay.com1N-Channel 30-V (D-S) MOSFET
FEATURES
•Halogen-free
•TrenchFET® Power MOSFET
•Optimized for High-Side Synchronous
Rectifier Operation
•100 % Rg Tested
•100 % UIS Tested
APPLICATIONS
•Notebook CPU Core
- High-Side SwitchPRODUCT SUMMARY
VDS (V)RDS(on) (Ω)ID (A)aQg (Typ.)
300.012 at VGS = 10 V 156.8 nC0.015 at VGS = 4.5 V 13
Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free)SO-8
SD
SD
SD
GD5
678
Top View2
3
41
N-Channel MOSFETGD
S
Notes: a.Base on TC = 25 °C.b.Surface Mounted on 1" x 1" FR4 board.c.t = 10 s.d.Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol LimitUnit
Drain-Source Voltage VDS30VGate-Source Voltage VGS± 20
Continuous Drain Current (TJ = 150 °C)TC = 25 °C
ID15
ATC = 70 °C12
TA = 25 °C11b, c
TA = 70 °C9b, c
Pulsed Drain CurrentIDM50
Continuous Source-Drain Diode CurrentTC = 25 °CIS3.8
TA = 25 °C2.1b, c
Single Pulse Avalanche CurrentL = 0.1 mHI
AS22
Avalanche EnergyEAS24mJ
Maximum Power DissipationTC = 25 °C
PD4.5
WTC = 70 °C2.8
TA = 25 °C2.5b, c
TA = 70 °C1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg- 55 to 150°C
THERMAL RESISTANCE RATINGS
Parameter Symbol TypicalMaximumUnit
Maximum Junction-to-Ambientb, dt ≤ 10 sRthJA3850°C/WMaximum Junction-to-Foot (Drain)Steady StateRthJF2228元器件交易网www.cecb2b.comwww.vishay.com2Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Vishay SiliconixSi4172DY
Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.Typ.Max.Unit
Static
Drain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 µA 30V
VDS Temperature CoefficientΔVDS/TJ ID = 250 µA 28mV/°CVGS(th) Temperature CoefficientΔVGS(th)/TJ - 6
Gate-Source Threshold VoltageVGS(th) VDS = VGS, ID = 250 µA 1.22.5V
Gate-Source LeakageIGSSVDS = 0 V, VGS = ± 20 V± 100nA
Zero Gate Voltage Drain CurrentIDSSVDS = 30 V, VGS = 0 V 1µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) VDS ≥ 5 V, VGS = 10 V 20A
Drain-Source On-State ResistanceaRDS(on) VGS = 10 V, ID = 11 A 0.00970.0120ΩVGS = 4.5 V, ID = 10 A 0.01220.0150
Forward Transconductanceagfs VDS = 15 V, ID = 11 A 52S
Dynamicb
Input CapacitanceCiss
VDS = 15 V, VGS = 0 V, f = 1 MHz 820
pFOutput CapacitanceCoss195
Reverse Transfer CapacitanceCrss 73
Total Gate ChargeQgVDS = 15 V, VGS = 10 V, ID = 11 A 1523
nCVDS = 15 V, VGS = 5 V, ID = 11 A 6.810.2
Gate-Source ChargeQgs 2.5
Gate-Drain ChargeQgd 2.3
Gate ResistanceRgf = 1 MHz0.361.83.6Ω
Turn-On Delay Timetd(on)
VDD = 15 V, RL = 1.4 Ω
ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω1624
nsRise Timetr1218
Turn-Off Delay Timetd(off) 1624
Fall Timetf1020
Turn-On Delay Timetd(on)
VDD = 15 V, RL = 1.4 Ω
ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω816
Rise Timetr1020
Turn-Off Delay Timetd(off) 1624
Fall Timetf815
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode CurrentISTC = 25 °C 25APulse Diode Forward CurrentaISM50
Body Diode VoltageVSDIS = 9 A0.81.2V
Body Diode Reverse Recovery Timetrr
IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 1530ns
Body Diode Reverse Recovery ChargeQrr612nC
Reverse Recovery Fall Timeta8nsReverse Recovery Rise Timetb7元器件交易网www.cecb2b.comDocument Number: 69000
S-82665-Rev. A, 03-Nov-08www.vishay.com3
Vishay SiliconixSi4172DY
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge01020304050
0246810VGS=10thru4V
VGS=3V
VDS-Drain-to-SourceVoltage(V)- DrainCurrent(A)
ID
0.0050.0070.0090.0110.0130.015
01020304050VGS=4.5V
VGS=10V
- On-Resistance(Ω)
RDS(on)
ID-DrainCurrent(A)
0246810
0481216VDS=24 VID=11 A
VDS=15V
- Gate-to-SourceVoltage(V)
Qg-TotalGateCharge(nC)VGSTransfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature012345
0.00.51.01.52.02.53.0TC=25 °C
TC=125 °CTC=-55°C
VGS-Gate-to-SourceVoltage(V)- DrainCurrent(A)
ID
Crss03006009001200
0612182430Ciss
Coss
VDS-Drain-to-SourceVoltage(V)C - Capacitance(pF)
0.60.91.21.51.8
- 50- 250255075100125150VGS=4.5VVGS=10VID=11 A
TJ-JunctionTemperature(°C)(Normalized)
- On-Resistance
RDS(on)元器件交易网www.cecb2b.com
