SI3867DV中文资料

LM386功放集成电路的应用
LM386电源电压4--12V，音频功率0.5w。

LM386音响功放是由NSC制造的，它的电源电压范围非常宽，最高可使用到15V，消耗静态电流为4mA，当电源电压为12V时，在8欧姆的负载情况下，可提供几百mW的功率。

它的典型输入阻抗为50K。

部分电路图举例
内部线路
本放大器的总电压增益为X200，是通过脚1、8之间有效地短路内部阻抗实现的
放大器
调幅收音机
音频感应器
助听器
振荡器
LM386典型应用电路
其内部电路如图：
相关资料：
LM386应用电路大全简易调频对讲机（用LM386）
用LM１８７５制作的功放 TDA2030功放典型电路由LM317组成的功放电路
常用（LM）系列音频功放块参数外围元件最少的2×15W功放电路
用LM1875X2和NE5532X2制作的HIFI功放电路音调控制电路
LM1875典型应用电路傻瓜系列功放内部电路图一款性能极佳的JFET-MOSFET耳机功放。

AD芯片-----TECHWELL TW6805A仿真软件里的AD0809有问题,用0808代替定时/计数器的使用方法：CLK：计数和测频状态时，数字波的输入端。

（counter enable)CE：计数使能端；通过属性设置高还是低有效。

无效暂停计数RST:复位端（RESET),可设上升沿（Low-High)或者下降沿（High-Low）有效。

4种工作方式：通过属性Operating Mode 来选择。

Default : 缺省方式，计数器方式。

Time(secs):100S定时方式，由CE和RST控制暂停和重新开始。

Time(hms)：10小时定时方式，同上。

Frequency: 测频方式，CE和RST有效时，显示CLK端数字波频率Count:计数方式。

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++常用元件列表：POT-HG 可调电位器7SEG-MPX8-CC-BLUE 8位数码管COMPIM 串口SW- 开关7SEG-BCD 含译码驱动的数显Speaker 扬声器2N5771和2N5772，15V对管300MARES , CAP,BUTTON 按钮开关KEYPAD-PHONE 3*4电话键盘KEYPAD-SMALLCALC 4*4计算器键盘KEYPAD-CALCULATOR 4*6计算器键盘PG160128A 128*128液晶++++++++元件库详细分类ics 模拟集成器件8个子类：amplifier 放大器comparators 比较器display drivers 显示驱动器filters 滤波器miscellaneous 混杂器件regulators 三端稳压器timers 555定时器voltage references 参考电压2，capacitors CAP电容，23个分类别animated 可显示充放电电荷电容audio grade axial 音响专用电容axial lead polypropene 径向轴引线聚丙烯电容axial lead polystyrene 径向轴引线聚苯乙烯电容ceramic disc 陶瓷圆片电容decoupling disc 解耦圆片电容high temp radial 高温径向电容high temp axial electrolytic高温径向电解电容metallised polyester film 金属聚酯膜电容metallised polypropene 金属聚丙烯电容metallised polypropene film 金属聚丙烯膜电容miniture electrolytic 微型电解电容multilayer metallised polyester film 多层金属聚酯膜电容mylar film 聚酯薄膜电容nickel barrier 镍栅电容non polarised 无极性电容polyester layer 聚酯层电容radial electrolytic 径向电解电容resin dipped 树脂蚀刻电容tantalum bead 钽珠电容variable 可变电容vx a xial electrolytic VX 轴电解电容3，CMOS 4000 series 4000系列数字电路adders 加法器buffers & drivers 缓冲和驱动器comparators 比较器counters 计数器decoders 译码器encoders 编码器flip-flops & latches 触发器和锁存器frequency dividers & tiner 分频和定时器gates & inverters 门电路和反相器memory 存储器混杂逻辑电路mutiplexers 数据选择器multivibrators 多谐振荡器phase-locked loops(PLL) 锁相环registers 寄存器signal switcher 信号开关4，connectors 接头；8个分类：audio 音频接头D-type D型接头DIL 双排插座header blocks 插头miscellaneous 各种接头PCB transfer PCB 传输接头SIL 单盘插座ribbon cable 蛇皮电缆terminal blocks 接线端子台5，data converters 数据转换器：4个分类：A/D converters 模数转换器D/A converters 数模转换器sample & hold 采样保持器temperature sensors 温度传感器6，debugging tools 调试工具数据：3个类别：breakpoint triggers 断点触发器logic probes 逻辑输出探针logic timuli 逻辑状态输入7，diodes 二极管；8个分类：bridge rectifiers 整流桥generic 普通二极管rectifiers 整流二极管schottky 肖特基二极管switching 开关二极管tunnel 隧道二极管varicap 稳压二极管8，inductors 电感：3个类别：generic 普通电感SMT inductors 表面安装技术电感transformers 变压器9,laplace primitives 拉普拉斯模型：7个类别：1st order 一阶模型2nd order 二阶模型controllers 控制器non-linear 非线性模型operators 算子poles/zeros 极点/零点symbols 符号10，memory ICs 存储器芯片：7个分类：dynamic RAM 动态数据存储器EEPROM 电可擦出程序存储器EPROM 可擦出程序存储器I2C memories I2C总线存储器memory cards 存储卡SPI Memories SPI总线存储器static RAM 静态数据存储器11，microprocessor ICs 微处理器：13个分类：12，modelling primitivvves 建模源：9个分类：13，operational amplifiers 运算放大器：7个分类：dual 双运放ideal 理想运放macromodel 大量使用的运放octal 8运放quad 4运放single 单运放triple 三运放14，optoelectronics 光电器件：11个分类：7-segment displays 7段显示alphanumeric LCDs 液晶数码显示bargraph displays 条形显示dot matrix displays 点阵显示graphical LCDs 液晶图形显示lamps 灯LCD controllers 液晶控制器LCD controllers 液晶面板显示LEDs 发光二极管optocouplers 光电耦合serial LCDs 串行液晶显示15，resistors 电阻：11个分类：metal film 金属膜电阻10 watt wirewound 10w绕线电阻2w metal film 2w 金属膜电阻3 watt wirewound 3w 绕线电阻7 watt wirewound 7w 绕线电阻generix 普通电阻high voltage 高压电阻NTC 负温度系数热敏电阻resistor packs 排阻variable 滑动变阻器varisitors可变电阻参考试验中采用的可变电阻是：POT-HG16，simulator primitives 仿真源：3个类别：flip-flops 触发器gates 门电路sources 电源17，switches and relays 开关和继电器：4个类别：key pads 键盘relays 普通继电器relays(specific) 专用继电器switches 开关18,switching devices 开关器件：4个分类：DIACs 两端交流开关generic 普通开关元件SCRs 可控硅TRIACs 三端双向可控硅19，真空管：20，传感器：2个分类：pressure 压力传感器temperature 温度传感器21，晶体管：8个分类：bipolar 双极型晶体管generic 普通晶体管(错误）IGBT 绝缘栅双极晶体管JFET 结型场效应管MOSFET 金属氧化物场效应管RF power LDMOS 射频功率LDMOS管RF power VDMOS 射频功率VDMOS管unijunction 单结晶体管Electromechanical 电机MOTOR AC 交流电机MOTOR SERVO 伺服电机双相步进电机motor-bistepper（Bipolar Stepper Motor），四相步进电机motor-stepper（unipolar stepper motor）驱动电路，用ULN2003可以，proteus中推荐的L298和L6201(电子元件-步进电机中有L298资料）+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++步进电机,可以用MTD2003,UN2916等专用芯片Proteus中图形液晶模块驱动芯片一览表LM3228 LM3229 LM3267 LM3283LM3287 LM4228 LM4265 LM4267LM4283 LM4287 PG12864F PG24064FPG128128A PG160128AAGM1232G EW12A03GLY HDM32GS12-B HDM32GS12Y-BHDG12864F-1 HDS12864F-3 HDG12864L-4 HDG12864L-6NOKIA7110 TG126410GFSB TG13650FEYAMPIRE128x64 LGM12641BS1RPROTEUS原理图元器件库详细说明单双向可控硅、包括电阻、电容、二极管、三极管和PCB的连接器符号、包括虚拟仪器和有源器件、拨动开关、键盘、可调电位器和开关、包括二极管和整流桥、稳压管、变容二极管、大功率二极管、高速二极管、可控硅、包括LCD、LED、LED阵列包括三极管包括场效应管包括模拟元器件AS 稳压二极管、全桥、74系列、及其他。

Vishay SiliconixSi3867DVP-Channel 20-V (D-S) MOSFETFEATURES•TrenchFET ® Power MOSFET •PWM OptimizedAPPLICATIONS•DC/DC- HDD- Power Supplies•Portable Devices Such As Cell Phones, PDA,DSC, and DVCPRODUCT SUMMARYV DS (V)r DS(on) (Ω)I D (A)- 200.051 at V GS = - 4.5 V- 5.10.067 at V GS = - 3.3 V - 4.50.100 at V GS = - 2.5 V- 3.7Notes:a. Surface Mounted on 1" x 1" FR4 Board.* Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS T A = 25°C, unless otherwise notedParameterSymbol 5 sec Steady State Unit Drain-Source Voltage V DS - 20VGate-Source VoltageV GS± 12Continuous Drain Current (T J = 150 °C)a T A = 25 °CI D - 5.1- 3.9AT A = 85 °C- 3.7- 2.8Pulsed Drain CurrentI DM - 20Continuous Diode Current (Diode Conduction)a I S- 1.7- 0.9Maximum Power DissipationaT A = 25 °C P D 2.0 1.1W T A = 85 °C1.00.6Operating Junction and Storage T emperature RangeT J , T stg- 55 to 150°C THERMAL RESISTANCE RATINGSParameter Symbol Typical Maximum UnitMaximum Junction-to-Ambient a t ≤ 5 sec R thJA 4562.5°C/WSteady State 90110Maximum Junction-to-Foot (Drain)Steady StateR thJF2530Vishay SiliconixSi3867DVNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25°C, unless otherwise notedParameter Symbol Test Conditions Min Typ Max U nitStaticGate Threshold Voltage V GS(th) V DS = V GS , I D = - 250 µA - 0.6- 1.4VGate-Body LeakageI GSS V DS = 0 V , V GS = ± 12 V± 100 nAZero Gate Voltage Drain Current I DSS V DS = - 20 V , V GS = 0 V - 1µA V DS = - 20 V , V GS = 0 V, T J = 85 °C- 5On-State Drain Current aI D(on) V DS = - 5 V , V GS = - 4.5 V - 20ADrain-Source On-State Resistance a r DS(on) V GS = - 4.5 V , I D = - 5.1 A 0.0410.051ΩV GS = - 3.3 V , I D = - 4.5 A 0.0540.067V GS = - 2.5 V, I D = - 2 A 0.0810.100Forward T ransconductance a g fs V DS = - 5 V , I D = - 5.1 A 11S Diode Forward Voltage a V SDI S = - 1.7 A, V GS = 0 V- 0.7- 1.2V Dynamic bTotal Gate Charge Q g V DS = - 10 V, V GS = - 4.5 V , I D = - 5.1 A711nCGate-Source Charge Q gs 2.3Gate-Drain Charge Q gd 1.6Turn-On Delay Time t d(on) V DD = - 10 V , R L = 10 ΩI D ≅ - 1 A, V GEN = - 4.5 V , R G = 6 Ω1730nsRise Timet r 3150Turn-Off Delay Time t d(off) 3250Fall Timet f 3050Source-Drain Reverse Recovery Timet rrI F = - 1.7 A, di/dt = 100 A/µs 2550Output Characteristics Transfer CharacteristicsVishay SiliconixSi3867DVTYPICAL CHARACTERISTICS 25°C unless notedSi3867DVVishay SiliconixTYPICAL CHARACTERISTICS 25°C unless notedSingle Pulse PowerVishay SiliconixSi3867DVTYPICAL CHARACTERISTICS 25°C unless notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?72068.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。