SI1022R-T1-GE3中文资料

Vishay SiliconixSi1022R

Document Number: 71331S-81543-Rev. B, 07-Jul-08www.vishay.com1N-Channel 60-V (D-S) MOSFETFEATURES •Halogen-free Option Available

•TrenchFET® Power MOSFETs •Low On-Resistance: 1.25 Ω •Low Threshold: 2.5 V •Low Input Capacitance: 30 pF •Fast Switching Speed: 25 ns •Low Input and Output Leakage •Miniature Package •ESD Protected: 2000 VAPPLICATIONS •Drivers: Relays, Solenoids, Lamps, Hammers, Displays,Memories, Transistors, etc. •Battery Operated Systems •Solid State Relays BENEFITS •Low Offset Voltage •Low-Voltage Operation •High-Speed Circuits •Low Error Voltage •Small Board AreaPRODUCT SUMMARY VDS(min.) (V)RDS(on) (Ω)VGS(th) (V)ID (mA)601.25 at VGS = 10 V 1 to 2.5330

Notes:a.Surface Mounted on FR4 board, Power Applied for t ≤ 10 s.Marking Code: ESC-75A(SOT-416)1

23GSDOrdering Information: Si1022R-T1-E3 (Lead (Pb)-free) Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol Limit U

nit Drain-Source Voltage VDS60VGate-Source Voltage VGS± 20Continuous Drain CurrentaTA = 25 °CID330mATA = 85 °C240Pulsed Drain Currenta IDM650Power Dissipationa TA = 25 °CPD250mWTA = 85 °C130Thermal Resistance, Maximum Junction-to-AmbientaRthJA500°C/WOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150°CRoHSCOMPLIANT元器件交易网www.cecb2b.comwww.vishay.com2Document Number: 71331S-81543-Rev. B, 07-Jul-08Vishay SiliconixSi1022R

Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. For DESIGN AID ONLY, not subject to production testing.c. Switching time is essentially independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min.Typ.Max.

Unit StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = 10 µA 60VGate-Threshold VoltageVGS(th) VDS = VGS, ID = 0.25 mA12.5Gate-Body LeakageIGSSVDS = 0 V, VGS = ± 10 V ± 150nATJ = 85 °C± 500VDS = 0 V, VGS = ± 5 V ± 20Zero Gate Voltage Drain CurrentIDSSVDS = 50 V, VGS = 0 V10TJ = 85 °C100VDS = 60 V, VGS = 0 V 1µAOn-State Drain CurrentaID(on) VDS = 10 V, VGS = 4.5 V500mAVDS = 7.5 V, VGS = 10 V800Drain-Source On-State ResistanceaRDS(on) VGS = 4.5 V, ID = 200 mA3.0ΩTJ = 125 °C5.0VGS = 10 V, ID = 500 mA 1.25TJ = 125 °C2.25Forward Transconductanceagfs VDS = 10 V, ID = 200 mA 100mSDiode Forward VoltageaVSD VGS = 0 V, IS = 200 mA 1.3VDynamicbInput CapacitanceCiss VDS = 25 V, VGS = 0 V, f = 1 MHz30pFOutput CapacitanceCoss 6nCReverse Transfer CapacitanceCrss 2.5Gate ChargeQg VDS = 10 V, ID = 250 mA, VGS = 4.5 V0.6Switchingb, cTurn-On Timet(on)VDD = 30 V, RL = 150 Ω,ID = 200 mA, VGEN = 10 V, RG = 10 Ω25nsTurn-Off Timet(off)35元器件交易网www.cecb2b.comDocument Number: 71331S-81543-Rev. B, 07-Jul-08www.vishay.com3Vishay SiliconixSi1022RTYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge0.00.20.40.60.81.0

012345VDS - Drain-to-Source Voltage (V) - Drain Current (A)IDVGS = 10 thru 7 V3 V5 V4 V6 V

0.00.51.01.52.02.53.03.54.0

02004006008001000ID - Drain Current (mA)VGS = 4.5 VVGS = 10 V - On-Resistance (Ω)RDS(on)

01234567

0.00.10.20.30.40.50.6VDS = 10 VID = 250 mA - Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)VGSTransfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature03006009001200

0123456VGS - Gate-to-Source Voltage (V) - Drain Current (mA)IDTJ = - 55 °C125 °C25 °C

01020304050

0510152025VDS - Drain-to-Source Voltage (V)C - Capacitance (pF)CrssCossCissVGS= 0 Vf = 1 MHz

0.00.40.81.21.62.0

-50-250255075100125150TJ - Junction Temperature (°C)VGS = 10 V at 500 mAVGS = 4.5 Vat 200 mA(Normalized) - On-ResistanceRDS(on)元器件交易网www.cecb2b.comwww.vishay.com4Document Number: 71331S-81543-Rev. B, 07-Jul-08Vishay SiliconixSi1022RTYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?71331.Source-Drain Diode Forward Voltage

Threshold Voltage Variance Over Temperature1.21.511001000