半导体芯片测试系统操作说明书v1.0

National Semiconductor is now part ofTexas Instruments.Search / for the latest technical information and details on our current products and services.LMC6081Precision CMOS Single Operational AmplifierGeneral DescriptionThe LMC6081is a precision low offset voltage operational amplifier,capable of single supply operation.Performance characteristics include ultra low input bias current,high volt-age gain,rail-to-rail output swing,and an input common mode voltage range that includes ground.These features,plus its low offset voltage,make the LMC6081ideally suited for precision circuit applications.Other applications using the LMC6081include precision full-wave rectifiers,integrators,references,and sample-and-hold circuits.This device is built with National’s advanced Double-Poly Silicon-Gate CMOS process.For designs with more critical power demands,see the LMC6061precision micropower operational amplifier.For a dual or quad operational amplifier with similar features,see the LMC6082or LMC6084respectively.PATENT PENDINGFeatures(Typical unless otherwise stated)n Low offset voltage:150µVn Operates from 4.5V to 15V single supply n Ultra low input bias current:10fAn Output swing to within 20mV of supply rail,100k load n Input common-mode range includes V −n High voltage gain:130dB n Improved latchup immunityApplicationsn Instrumentation amplifiern Photodiode and infrared detector preamplifier n Transducer amplifiers n Medical instrumentation n D/A converternCharge amplifier for piezoelectric transducersConnection DiagramOrdering InformationPackageTemperature Range NSC DrawingTransport MediaMilitary Industrial −55˚C to +125˚C−40˚C to +85˚C 8-Pin LMC6081AMNLMC6081AIN N08ERailMolded DIP LMC6081IN 8-Pin LMC6081AIM M08ARail Small OutlineLMC6081IMTape and Reel8-Pin DIP/SODS011423-1Top ViewNovember 1994LMC6081Precision CMOS Single Operational Amplifier©1999National Semiconductor Corporation Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Differential Input Voltage ±Supply VoltageVoltage at Input/Output Pin (V +)+0.3V,(V −)−0.3VSupply Voltage (V +−V −)16V Output Short Circuit to V +(Note 10)Output Short Circuit to V −(Note 2)Lead Temperature (Soldering,10Sec.)260˚CStorage Temp.Range −65˚C to +150˚CJunction Temperature 150˚C ESD Tolerance (Note 4)2kVCurrent at Input Pin ±10mA Current at Output Pin±30mACurrent at Power Supply Pin 40mA Power Dissipation(Note 3)Operating Ratings (Note 1)Temperature Range LMC6081AM−55˚C ≤T J ≤+125˚C LMC6081AI,LMC6081I −40˚C ≤T J ≤+85˚C Supply Voltage4.5V ≤V +≤15.5VThermal Resistance (θJA ),(Note 11)N Package,8-Pin Molded DIP 115˚C/W M Package,8-Pin Surface Mount 193˚C/WPower Dissipation (Note 9)DC Electrical CharacteristicsUnless otherwise specified,all limits guaranteed for T J =25˚C.Boldface limits apply at the temperature extremes.V +=5V,V −=0V,V CM =1.5V,V O =2.5V and R L >1M unless otherwise specified.TypLMC6081AMLMC6081AI LMC6081I Symbol Parameter Conditions (Note 5)Limit Limit Limit Units(Note 6)(Note 6)(Note 6)V OS Input Offset Voltage 150350350800µV 10008001300Max TCV OS Input Offset Voltage 1.0µV/˚C Average Drift I B Input Bias Current 0.010pA 10044Max I OS Input Offset Current 0.005pA 10022Max R IN Input Resistance >10Tera ΩCMRR Common Mode 0V ≤V CM ≤12.0V 85757566dB Rejection Ratio V +=15V 727263Min +PSRR Positive Power Supply 5V ≤V +≤15V 85757566dB Rejection Ratio V O =2.5V 727263Min −PSRR Negative Power Supply 0V ≤V −≤−10V94848474dB Rejection Ratio 818171Min V CMInput Common-Mode V +=5V and 15V−0.4−0.1−0.1−0.1V Voltage Rangefor CMRR ≥60dB000Max V +−1.9V +−2.3V +−2.3V +−2.3V V +−2.6V +−2.5V +−2.5Min A V Large Signal R L =2k ΩSourcing 1400400400300V/mV Voltage Gain(Note 7)300300200Min Sinking35018018090V/mV 7010060Min R L =600ΩSourcing 1200400400200V/mV (Note 7)15015080Min Sinking15010010070V/mV 355035Min 2DC Electrical Characteristics(Continued)Unless otherwise specified,all limits guaranteed for T J =25˚C.Boldface limits apply at the temperature extremes.V +=5V,V −=0V,V CM =1.5V,V O =2.5V and R L >1M unless otherwise specified.TypLMC6081AMLMC6081AI LMC6081I Symbol Parameter Conditions(Note 5)Limit Limit Limit Units(Note 6)(Note 6)(Note 6)V OOutput SwingV +=5V4.87 4.80 4.80 4.75V R L =2k Ωto 2.5V4.70 4.73 4.67Min 0.100.130.130.20V 0.190.170.24Max V +=5V4.61 4.50 4.50 4.40V R L =600Ωto 2.5V4.24 4.31 4.21Min 0.300.400.400.50V 0.630.500.63Max V +=15V14.6314.5014.5014.37V R L =2k Ωto 7.5V14.3014.3414.25Min 0.260.350.350.44V 0.480.450.56Max V +=15V13.9013.3513.3512.92V R L =600Ωto 7.5V12.8012.8612.44Min 0.791.16 1.16 1.33V 1.42 1.32 1.58Max I OOutput Current Sourcing,V O =0V 22161613mA V +=5V8108Min Sinking,V O =5V21161613mA 111310Min I OOutput Current Sourcing,V O =0V 30282823mA V +=15V182218Min Sinking,V O =13V34282823mA (Note 10)192218Min I S Supply CurrentV +=+5V,V O =1.5V 450750750750µA 900900900Max V +=+15V,V O =7.5V550850850850µA 950950950Max 3AC Electrical CharacteristicsUnless otherwise specified,all limits guaranteed for T J =25˚C,Boldface limits apply at the temperature extremes.V +=5V,V −=0V,V CM =1.5V,V O =2.5V and R L >1M unless otherwise specified.TypLMC6081AMLMC6081AI LMC6081Symbol ParameterConditions(Note 5)Limit Limit Limit Units(Note 6)(Note 6)(Note 6)SR Slew Rate(Note 8)1.50.80.80.8V/µs 0.50.60.6Min GBW Gain-Bandwidth Product 1.3MHz φm Phase Margin 50Deg enInput-Referred Voltage NoiseF =1kHz22Typical Performance CharacteristicsV S =±7.5V,T A =25˚C,Unless otherwisespecified (Continued)Input Bias Current vs TemperatureDS011423-18Supply Current vs Supply Voltage DS011423-19Input Voltagevs Output VoltageDS011423-20Common Mode Rejection Ratio vs FrequencyDS011423-21Power Supply Rejection Ratio vs Frequency DS011423-22Input Voltage Noise vs FrequencyDS011423-23Output Characteristics Sourcing Current DS011423-24Output Characteristics Sinking CurrentDS011423-25Gain and Phase Response vs Temperature (−55˚C to +125˚C)DS011423-265Typical Performance CharacteristicsV S =±7.5V,T A =25˚C,Unless otherwisespecified (Continued)Applications HintsAMPLIFIER TOPOLOGYThe LMC6081incorporates a novel op-amp design topology that enables it to maintain rail-to-rail output swing even when driving a large load.Instead of relying on a push-pull unity gain output buffer stage,the output stage is taken directly from the internal integrator,which provides both low output impedance and large gain.Special feed-forward compensa-tion design techniques are incorporated to maintain stability over a wider range of operating conditions than traditionalmicropower op-amps.These features make the LMC6081both easier to design with,and provide higher speed than products typically found in this ultra-low power PENSATING FOR INPUT CAPACITANCEIt is quite common to use large values of feedback resis-tance for amplifiers with ultra-low input current,like the LMC6081.Gain and PhaseResponse vs Capacitive Load with R L =600ΩDS011423-27Gain and PhaseResponse vs Capacitive Load with R L =500k ΩDS011423-28Open LoopFrequency ResponseDS011423-29Inverting Small Signal Pulse Response DS011423-30Inverting Large Signal Pulse Response DS011423-31Non-Inverting Small Signal Pulse ResponseDS011423-32Non-Inverting Large Signal Pulse ResponseDS011423-33Stability vs Capacitive Load,R L =600ΩDS011423-34Stability vs Capacitive Load R L =1M ΩDS011423-356Applications Hints(Continued)Although the LMC6081is highly stable over a wide range ofoperating conditions,certain precautions must be met toachieve the desired pulse response when a large feedbackresistor is rge feedback resistors and even smallvalues of input capacitance,due to transducers,photo-diodes,and circuit board parasitics,reduce phase margins.When high input impedances are demanded,guarding of theLMC6081is suggested.Guarding input lines will not only re-duce leakage,but lowers stray input capacitance as well.(See Printed-Circuit-Board Layout for High ImpedanceWork).The effect of input capacitance can be compensated for byadding a capacitor,C f,around the feedback resistors(as inFigure1)such that:orR1C IN≤R2C fSince it is often difficult to know the exact value of C IN,C f canbe experimentally adjusted so that the desired pulse re-sponse is achieved.Refer to the LMC660and LMC662for amore detailed discussion on compensating for inputcapacitance.CAPACITIVE LOAD TOLERANCEAll rail-to-rail output swing operational amplifiers have volt-age gain in the output stage.A compensation capacitor isnormally included in this integrator stage.The frequency lo-cation of the dominant pole is affected by the resistive loadon the amplifier.Capacitive load driving capability can be op-timized by using an appropriate resistive load in parallel withthe capacitive load(see typical curves).Direct capacitive loading will reduce the phase margin ofmany op-amps.A pole in the feedback loop is created by thecombination of the op-amp’s output impedance and the ca-pacitive load.This pole induces phase lag at the unity-gaincrossover frequency of the amplifier resulting in either an os-cillatory or underdamped pulse response.With a few exter-nal components,op amps can easily indirectly drive capaci-tive loads,as shown in Figure2.In the circuit of Figure2,R1and C1serve to counteract theloss of phase margin by feeding the high frequency compo-nent of the output signal back to the amplifier’s inverting in-put,thereby preserving phase margin in the overall feedbackloop.Capacitive load driving capability is enhanced by using a pullup resistor to V+(Figure3).Typically a pull up resistor con-ducting500µA or more will significantly improve capacitiveload responses.The value of the pull up resistor must be de-termined based on the current sinking capability of the ampli-fier with respect to the desired output swing.Open loop gainof the amplifier can also be affected by the pull up resistor(see electrical characteristics).PRINTED-CIRCUIT-BOARD LAYOUTFOR HIGH-IMPEDANCE WORKIt is generally recognized that any circuit which must operatewith less than1000pA of leakage current requires speciallayout of the PC board.When one wishes to take advantageof the ultra-low bias current of the LMC6081,typically lessthan10fA,it is essential to have an excellent layout.Fortu-nately,the techniques of obtaining low leakages are quitesimple.First,the user must not ignore the surface leakage ofthe PC board,even though it may sometimes appear accept-ably low,because under conditions of high humidity or dustor contamination,the surface leakage will be appreciable.To minimize the effect of any surface leakage,lay out a ringof foil completely surrounding the LMC6081’s inputs and theterminals of capacitors,diodes,conductors,resistors,relayterminals,etc.connected to the op-amp’s inputs,as in Fig-DS011423-4FIGURE1.Cancelling the Effect of Input CapacitanceDS011423-5FIGURE2.LMC6081Noninverting Gain of10Amplifier,Compensated to Handle Capacitive LoadsDS011423-14pensating for LargeCapacitive Loads with a Pull Up Resistor7Applications Hints(Continued)ure 4.To have a significant effect,guard rings should be placed on both the top and bottom of the PC board.This PC foil must then be connected to a voltage which is at the same voltage as the amplifier inputs,since no leakage current can flow between two points at the same potential.For example,a PC board trace-to-pad resistance of 1012Ω,which is nor-mally considered a very large resistance,could leak 5pA if the trace were a 5V bus adjacent to the pad of the input.This would cause a 100times degradation from the LMC6081’s actual performance.However,if a guard ring is held within 5mV of the inputs,then even a resistance of 1011Ωwould cause only 0.05pA of leakage current.See Figure 5for typi-cal connections of guard rings for standard op-amp configurations.The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few circuits,there is another technique which is even better than a guard ring on a PC board:Don’t insert the amplifier’s input pin into the board at all,but bend it up in the air and use only air as an in-sulator.Air is an excellent insulator.In this case you may have to forego some of the advantages of PC board con-struction,but the advantages are sometimes well worth the effort of using point-to-point up-in-the-air wiring.See Figure 6.LatchupCMOS devices tend to be susceptible to latchup due to their internal parasitic SCR effects.The (I/O)input and output pins look similar to the gate of the SCR.There is a minimum cur-DS011423-6FIGURE 4.Example of Guard Ring in P .C.BoardLayoutDS011423-7Inverting AmplifierDS011423-8Non-Inverting AmplifierDS011423-9FollowerFIGURE 5.Typical Connections of Guard Rings DS011423-10(Input pins are lifted out of PC board and soldered directly to components.All other pins connected to PC board).FIGURE 6.Air Wiring8Latchup(Continued)rent required to trigger the SCR gate lead.The LMC6061and LMC6081are designed to withstand 100mA surge cur-rent on the I/O pins.Some resistive method should be used to isolate any capacitance from supplying excess current to the I/O pins.In addition,like an SCR,there is a minimum holding current for any latchup mode.Limiting current to the supply pins will also inhibit latchup susceptibility.Typical Single-Supply Applications(V +=5.0V DC )The extremely high input impedance,and low power con-sumption,of the LMC6081make it ideal for applications thatrequire battery-powered instrumentation amplifiers.Ex-amples of these types of applications are hand-held pH probes,analytic medical instruments,magnetic field detec-tors,gas detectors,and silicon based pressure transducers.Figure 7shows an instrumentation amplifier that features high differential and common mode input resistance (>1014Ω),0.01%gain accuracy at A V =1000,excellent CMRR with 1k Ωimbalance in bridge source resistance.In-put current is less than 100fA and offset drift is less than 2.5µV/˚C.R 2provides a simple means of adjusting gain over a wide range without degrading CMRR.R 7is an initial trim used to maximize CMRR without using super precision matched resistors.For good CMRR over temperature,low drift resistors should be used.DS011423-11If R 1=R 5,R 3=R 6,and R 4=R 7;thenA V ≈100for circuit shown (R 2=9.822k).FIGURE 7.Instrumentation AmplifierDS011423-12FIGURE 8.Low-Leakage Sample and Hold9Typical Single-SupplyApplications(Continued)DS011423-13FIGURE9.1Hz Square Wave Oscillator 10Physical Dimensions inches(millimeters)unless otherwise noted8-Pin Small Outline PackageOrder Number LMC6081AIM or LMC6081IMNS Package Number M08A8-Pin Molded Dual-In-Line PackageOrder Number LMC6081AIN,LMC6081AMN or LMC6081INNS Package Number N08E11LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE-VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI-CONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or sys-tems which,(a)are intended for surgical implant intothe body,or (b)support or sustain life,and whose fail-ure to perform when properly used in accordancewith instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be rea-sonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:***************National Semiconductor EuropeFax:+49(0)180-5308586Email:**********************Deutsch Tel:+49(0)180-5308585English Tel:+49(0)180-5327832Français Tel:+49(0)180-5329358Italiano Tel:+49(0)180-5341680National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:*******************National Semiconductor Japan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-7507L M C 6081P r e c i s i o n C M O S S i n g l e O p e r a t i o n a l A m p l i f i e rNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。

BAT32G133 数据手册ArrayBAT32G133数据手册基于ARM® Cortex®-M0+的超低功耗32位微控制器内置32K字节Flash,丰富的模拟功能,定时器及各种通讯接口请注意以下有关CMS知识产权政策＊中微半导体（深圳）股份有限公司（以下简称本公司）已申请了专利，享有绝对的合法权益。

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功能⚫超低功耗工作环境：➢电源电压范围：2.0V到5.5V➢温度范围：-40℃到105℃➢低功耗模式：睡眠模式，深度睡眠模式➢运行功耗：35uA/MHz@64MHz➢深度睡眠模式下功耗：0.45uA➢深度睡眠模式+32.768K+RTC工作：0.7uA⚫内核：➢ARM®32-bitCortex®-M0+ CPU➢工作频率：32KHz～64MHz⚫存储器：➢32KB Flash存储器，程序与数据存储共享（支持Byte/HalfWord/Word编程）➢ 1.5KB 专用数据Flash存储器➢4KB SRAM存储器，附带奇偶校验⚫电源和复位管理：➢内置上电复位（POR）电路➢内置电压检测（LVD）电路（门限电压可设）⚫时钟管理：➢外部高速晶振1MHz～20MHz➢外部低速晶振32.768KHz➢内部高速时钟1MHz～64MHz➢内部低速时钟15KHz/30KHz可选⚫乘法器模块：➢乘法器：支持32bit乘法运算⚫增强型DMA控制器：➢中断触发启动。

数字集成电路测试系统BJ3125A使用说明书1.概述1.1BJ3125A 型数字IC测试系统是BJ3125数字IC测试系统的改型产品，继承了原有系统的优点。

1.2 该系统数字IC测试按存储响应法进行设计，这种方法理论上成熟，方法上统一，应用最广泛，国内外科技人员熟悉。

此外，由于利用这种原理测试方法上差异小，所以易于和国内、外其他测试系统的测试数据，测试结果数据进行比较，有较好的兼容性。

1.3 本系统的设计思想采用通用微机控制，为以后多快好省地开发各系列智能仪器打下基础。

采用通用微机对于软件开发及系统调试都带来许多方便。

采用总线支持模块化结构，便于扩展成其他测试系统。

将研制中大规模数字集成电路测试系统中积累的知识、经验充分赋予该系统，软件能继承的就继承，如页表式编程测试包、系统的诊断校准程序、程序库……在功能测试上不追求速度而只追求功能齐全，如：能测试各种工艺系列的IC，能测开路门，可进行三态测试等。

着重在直流参数上下功夫。

如：小电流测试及保证较好的测试精度。

在电路设计上力求电路简捷，尽量采用先进的、性价比高的器件，如选用AD7237双D/A、AD526增益可软件编程放大器、AD620仪用放大器等，可降低成本，缩短研制周期，较容易保证较好的性能指标，便于生产。

1.4 本系统的主要特点——采用通用微机控制——完善的诊断校准程序——商业化齐套实用的程序库——具有测试存储器的软件图形发生器——具有电平精度高、输出阻抗低、电平范围宽的三态驱动器。

——可对开路门进行测试——具有三态测试能力——采用地缓冲放大器，以利用提高直流参数测试精度——功能测试采用双阈值比较——恒流源、恒压源、电压表是独立的、便于测试模拟电路时使用——易于扩展成其它IC测试系统。

1.5 本测试系统，可测试中小规模数字IC1.6 测试用途整机厂、研究单位的器件验收测试及其他各种应用测试。

2.系统构成及主要功能（参看图1）测试仪计算机总线测试仪总线数字信号线模拟信号线图 1 BJ3125A IC 测试系统方框图2.1 软件部分系统软件主要包括：WINDOWS98操作系统OFFICE2000编程测试包应用软件主要包括：系统的诊断、校准包、测试程序库。

半导体设备操作指南及维护规范第1章设备操作基础 (4)1.1 设备操作安全规程 (4)1.1.1 操作人员要求 (4)1.1.2 安全防护措施 (4)1.1.3 操作环境要求 (4)1.1.4 应急处理 (4)1.2 设备操作前的准备工作 (5)1.2.1 检查设备状态 (5)1.2.2 确认物料及工具 (5)1.2.3 检查设备控制系统 (5)1.3 设备开机及关机操作 (5)1.3.1 开机操作 (5)1.3.2 关机操作 (5)1.4 设备运行状态的监测与调整 (5)1.4.1 监测设备运行参数 (5)1.4.2 检查设备运行状况 (5)1.4.3 调整设备运行参数 (5)1.4.4 故障处理 (5)第2章设备操作流程 (6)2.1 芯片装载与卸载操作 (6)2.1.1 装载前准备 (6)2.1.2 芯片装载 (6)2.1.3 芯片卸载 (6)2.2 设备工艺参数设置 (6)2.2.1 参数设置原则 (6)2.2.2 参数设置步骤 (6)2.3 设备运行过程中的监控 (6)2.3.1 设备状态监控 (6)2.3.2 工艺参数监控 (6)2.4 异常情况的处理与排除 (6)2.4.1 异常情况识别 (7)2.4.2 异常情况处理 (7)2.4.3 异常情况排除 (7)第3章设备维护基础 (7)3.1 设备维护的基本概念 (7)3.2 设备维护的分类与周期 (7)3.2.1 预防性维护 (7)3.2.2 改正性维护 (7)3.2.3 预测性维护 (7)3.3 设备维护的工具与材料 (8)3.3.1 工具 (8)3.4 设备维护注意事项 (8)第4章设备机械部分维护 (8)4.1 机械结构的检查与调整 (8)4.1.1 检查要求 (8)4.1.2 调整方法 (8)4.2 传动系统的维护与润滑 (9)4.2.1 维护要求 (9)4.2.2 润滑方法 (9)4.3 装载机构的检查与维护 (9)4.3.1 检查要求 (9)4.3.2 维护方法 (9)4.4 气动系统的检查与保养 (9)4.4.1 检查要求 (9)4.4.2 保养方法 (9)第5章电气控制系统维护 (9)5.1 电源系统的检查与维护 (9)5.1.1 检查项目 (9)5.1.2 维护措施 (10)5.2 电机及驱动器的检查与维护 (10)5.2.1 检查项目 (10)5.2.2 维护措施 (10)5.3 控制器及传感器的检查与更换 (10)5.3.1 检查项目 (10)5.3.2 维护措施 (10)5.4 电气连接部分的检查与紧固 (10)5.4.1 检查项目 (10)5.4.2 维护措施 (11)第6章仪表及传感器部分维护 (11)6.1 压力传感器的检查与校准 (11)6.1.1 检查步骤 (11)6.1.2 校准步骤 (11)6.2 温度传感器的检查与校准 (11)6.2.1 检查步骤 (11)6.2.2 校准步骤 (11)6.3 流量传感器的检查与校准 (11)6.3.1 检查步骤 (12)6.3.2 校准步骤 (12)6.4 分析仪器及检测设备的维护 (12)6.4.1 日常维护 (12)6.4.2 故障处理 (12)6.4.3 定期校准 (12)第7章设备软件系统维护 (12)7.1 软件系统的备份与恢复 (12)7.1.2 备份方法 (13)7.1.3 恢复方法 (13)7.2 系统参数的检查与调整 (13)7.2.1 检查方法 (13)7.2.2 调整方法 (13)7.3 软件升级及兼容性测试 (13)7.3.1 升级原则 (13)7.3.2 兼容性测试 (14)7.4 软件故障的排除与修复 (14)7.4.1 故障诊断 (14)7.4.2 故障排除 (14)7.4.3 修复方法 (14)第8章液路系统维护 (14)8.1 液路管道的检查与清洗 (14)8.1.1 检查频率 (14)8.1.2 检查内容 (15)8.1.3 清洗方法 (15)8.1.4 清洗周期 (15)8.2 泵及阀门的状态检查与维护 (15)8.2.1 检查频率 (15)8.2.2 检查内容 (15)8.2.3 维护方法 (15)8.2.4 阀门保养 (15)8.3 液位传感器的检查与校准 (15)8.3.1 检查频率 (15)8.3.2 检查内容 (15)8.3.3 校准方法 (15)8.4 液路系统泄漏处理及预防 (16)8.4.1 泄漏处理 (16)8.4.2 预防措施 (16)8.4.3 应急预案 (16)第9章真空系统维护 (16)9.1 真空泵的检查与维护 (16)9.1.1 检查频率 (16)9.1.2 检查内容 (16)9.1.3 维护方法 (16)9.2 真空阀门及管道的检查 (16)9.2.1 检查频率 (16)9.2.2 检查内容 (16)9.2.3 维护方法 (17)9.3 真空计的校准与更换 (17)9.3.1 校准频率 (17)9.3.2 校准方法 (17)9.4 真空泄漏的检测与处理 (17)9.4.1 检测方法 (17)9.4.2 处理方法 (17)9.4.3 预防措施 (17)第10章设备功能检测与优化 (18)10.1 设备功能指标及测试方法 (18)10.1.1 功能指标 (18)10.1.2 测试方法 (18)10.2 设备功能检测的周期与要求 (18)10.2.1 检测周期 (18)10.2.2 检测要求 (19)10.3 常见设备功能问题的分析与解决 (19)10.3.1 产量问题 (19)10.3.2 良率问题 (19)10.3.3 稳定性问题 (19)10.3.4 可靠性问题 (19)10.3.5 功耗问题 (19)10.4 设备功能优化策略与实践 (19)10.4.1 优化策略 (19)10.4.2 实践措施 (20)第1章设备操作基础1.1 设备操作安全规程1.1.1 操作人员要求操作半导体设备的人员需具备相应的专业技能和操作经验。