KSD401YTU中文资料

图1 延伸增强剂的效果
0 10 20 30 40
● 实现了各种引物同一循环条件 无需摸索循环条件。20mer 以上的引物（Tm 值*＞63℃）可先尝试 2 步法。无需摸索条 件非常简便。
Primer
20mer以上 （最好22mer 以上）
非特异性扩增
2步循环 Tm > 63℃
Step Down循环
无扩增
◆产品组成
KOD -Plus- Neo (1.0 U/μl) 10× PCR Buffer for KOD -Plus- Neo 25 mM MgSO4 2 mM dNTPs
KOD-401 (200 U×1) 200μl×1 1 ml×1 1 ml×1 1 ml×1
KOD-401B (KOD-401)×5
【 注意 】
该系列产品为科研用试剂。请勿作为诊断、临床试剂用。此外，对于本产品 的有害性调查还不十分全面，因此，在使用时，请严格遵守实验室的一般注意事 项，适当使用保护用品，安全操作。
【 保存 】
所有组分请均保存于-20℃条件下。
【1】 简介
KOD -Plus- Neo 是在来源于鹿儿岛县小宝岛的含硫气孔中分离出来的超嗜热原始菌 Thermococcus kodakaraensis KOD1 株的 KOD DNA Polymerase1,2)的基础上开发的 PCR 用酶｡由于 KOD DNA Polymerase 具备强力的 3´→5´Exonuclease 活性（Proofreading 活 性），可表现出很高的保真性，最适用于克隆目的的 PCR｡而本产品通过在 KOD DNA Polymerase 中添加独有的延伸增强剂，在保持原产品 KOD -Plus-（Code No. KOD-201）、 KOD -Plus- Ver.2（Code No. KOD-211）优良的保真性（约为 Taq 的 80 倍）的同时，扩增 量和延伸性得到了显著的提升。

目 录1. 应用领域3. 技术参数4. 安装说明6. 操作说明书7. 设置与自动检测8. 检查与维修9. 故障诊断 10.危险11.后备零件清单 12.电路图 1.应用领域在喷漆车间，移动式红外线烤灯是一个有效的助手，它适合于各种类型的小、中等尺寸的油漆修补工作。

移动式红外线烤灯主要适合于油灰，填充剂底漆和面漆的高强度烘干，它可用于预处理和最后阶段。

著名的汽车制造公司也使用移动式红外线烤灯来用于小范围修补工作和抛光前的最终烘干。

2.产品简介IRT －401移动式红外线烤灯是一种带一个卡盒的简易操作设备，每一个卡盒有4个镀金表面反射镜和用于增加安全和工作寿命的通风装置，它设计的气压弹簧更容易调2 3 3 4 6 7 9整卡盒,IR灯更容易更换。

其网络保护灯和反射镜可避免机械损坏。

控制单元预设几种程序的选择能力，同时可使预热和烘干时间程序化。

2.1 产品的优势2.1.1 更高的质量使用移动式红外线烤灯在油灰，甚至在上面漆时，能够获得更好的质量。

高温的表面和从材料散放的热量，将确保所有的溶剂和反应物消失。

2.1.2 烘干时间更短上油灰2～4分钟填充4～8分钟底漆6～9分钟底涂5～9分钟面涂7～12分钟清洗油漆6～12分钟2.1.3 耗能更低通过短波技术和金色表面反射器可更有效地使用能量。

2.1.4 可烘干表面在50CM的距离外，IRT401可在“1×1.4平方米”范围的黑色发光的薄片金属上产生干燥表面。

3.技术参数IRT－4014.安装说明IRT －4014.1 将车轮拧入底座，在后部装入可锁定式轮子，将控制柱插座拧入底座。

注意这时，用手带紧。

为了便于安装，将车轮锁定。

4.2 将控制柱放入插座中，拧紧所有螺丝。

4.3 安装支撑杆和圆盘到控制柱，先放低支撑杆，主并行杆在上面位置。

经过一段时间使用后，需要重新拧紧在并行杆上的四个螺母。

4.4 安装车厄和卡盒4.5 拧开卡盒边缘的两个螺母，移出前面的表盖。

感謝您購買本系列溫控器，請事先詳細閱讀此“使用說明書”，本說明書中的資料如改動恕不通知，敬請諒解。

本溫控器的製造經過嚴格地品質管理，如遇有不正常的狀態或顯示，請即刻與北京四通股份公司工控部或您的供應商聯絡。

第1章準備篇 1.型號定義┄┄┄┄┄┄┄┄┄┄┄┄┄┄┄┄┄1-12.安裝┄┄┄┄┄┄┄┄┄┄┄┄┄┄┄┄┄1-22.1外形尺寸2.2安裝方法3.接線3.1端子構成3.2接線注意事項4.規格4.1輸入4.2設定4.3顯示4.4輸出第2章功能篇 1.控制1.1PID控制1.2加熱、冷卻控制1.3正動作、逆動作1.4自動演算(AT)功能1.5自主校正（ST）功能1.6設定資料鎖（LCK）功能2.報警2.1溫度報警2.2加熱器斷線報警（HBA）2.3控制環斷線報警（LBA）3.輸入異常時的動作第3章操作篇 1.設定前狀態2 S V設定模式3.參數設定模式4工程師參數設定模式第4篇通訊篇（僅限CD系列表）第5篇其它第1篇準備篇1.型號定義請參照下列代碼表確認產品是否與您指定的型號一致。

CD/CH □01/02□□□-□□*□□-□□①②③④⑤⑥⑦⑧⑨⑩①規格尺寸詳見第1篇2.1節②控制類型F：PID動作及自動演算（逆動作）D：PID動作及自動演算（正動作）W：加熱/冷卻PID動作及自動演算（水冷）*1A：加熱/冷卻PID動作及自動演算（風冷）*1③輸入類型：見輸入範圍表④範圍代碼：見輸入範圍表⑤第一控制輸出（OUT1）（加熱側）M：繼電器接點輸出8：電流輸出（DC4~20mA）V：電壓脈衝輸出G：閘流控制管驅動用觸發器輸出T：閘流控制管輸出⑥第二控制輸出（OUT2）（製冷側）*2無記號：當控制動作是F或D時M：繼電器接點輸出T：閘流控制管輸出V：電壓脈衝輸出8：電流輸出（DC4~20mA）⑦第一報警（ALM1），⑧第二報警（ALM2）*2N；未設報警J：下限輸入值報警A：上限偏差報警K：附待機上限輸入值報警B：下限偏差報警L：附待機下限輸入值報警C：上、下限偏差報警P：加熱器斷線報警（CTL-6）*3 D：範圍內報警S：加熱器斷線報警（CTL-12）*3 E：附待機上限偏差報警R：控制環斷線報警*4F：附待機下限偏差報警V：上限設定值報警G；附待機上下限偏差報警W：下限設定值報警H：上限輸入值報警⑨通信功能（僅限CD系列）N：無通信功能5：RS-485（雙線系統）⑩防水/防塵功能N：無防水/防塵功能1：有防水/防塵功能注：*1W或A型無自主校正功能*2第二控制輸出（OUT2）﹑第二報警（ALM2）為選項*3不能被定為第一報警（ALM1）*4控制環斷線報警只能在第一報警和第二報警中選擇其一2.安裝2.1外形尺寸2.2安裝方法⑴按照盤面開孔尺寸在盤面上打出用來安裝儀器的矩形孔。

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)2SK4042Switching Regulator Applications• Low drain-source ON resistance: R DS (ON) = 0.7Ω (typ.) • High forward transfer admittance: |Y fs | = 6.5S (typ.) • Low leakage current: I DSS = 100 μA (V DS = 500 V)• Enhancement mode: V th = 2.0~4.0 V (V DS = 10 V , I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain-source voltageV DSS500 V Drain-gate voltage (R GS = 20 k Ω) V DGR500 V Gate-source voltageV GSS ±30 V DC (Note 1)I D8 Drain currentPulse (t = 1 ms)(Note 1) IDP32ADrain power dissipation (Tc = 25°C)P D40 WSingle pulse avalanche energy(Note 2)E AS312 mJ Avalanche currentI AR 8 ARepetitive avalanche energy (Note 3) E AR 4 mJChannel temperature T ch 150 °CStorage temperature rangeT stg-55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to case R th (ch-c) 3.125 °C/W Thermal resistance, channel to ambientR th (ch-a) 62.5 °C/WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C(initial), L = 8.3 mH, I AR = 8 A, R G = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mm1: Gate2: Drain 3: SourceJEDEC ―JEITA SC-67 TOSHIBA 2-10U1BWeight : 1.7 g (typ.)Electrical Characteristics (Ta = 25°C)Source-Drain Ratings and Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitContinuous drain reverse current(Note 1) I DR ⎯⎯ ⎯ 8 A Pulse drain reverse current (Note 1)I DRP ⎯⎯ ⎯ 32 A Forward voltage (diode) V DSF I DR = 8 A, V GS = 0 V ⎯⎯−1.7VReverse recovery time t rr ⎯ 190 ⎯ ns Reverse recovery chargeQ rrI DR = 8 A, V GS = 0 V, dI DR /dt = 100 A/μs⎯ 0.5 ⎯μCMarkingLead (Pb)-Free FinishK4042816200102030 1245040⎪Y fs ⎪ – I DGATE-SOURCE VOLTAGE V GS (V)I D – V GSGATE-SOURCE VOLTAGE V GS(V) D R A I N C U R R E N TI D (A )D R A I N -S O U R CE V O L T A G E V D S (V )V DS – V GSDRAIN CURRENT I D (A) F O R W A R D T R A N S F E R A D M I T T A N C E⎪Y f s ⎪ (S )DRAIN-SOURCE VOLTAGE V DS(V)I D – V DSD R A I N C U R RE N T I D (A )DRAIN-SOURCE VOLTAGE V DS (V)I D – V DSD R A I N C U R RE N T I D (A )R DS (ON) – I DDRAIN CURRENT I D (A)D R A I N -S O U R CE O N R E S I S T A N C E R D S (O N ) (Ω)2 4 6 8 104 8 2610 00682015 410510 20.10.11101210DRAIN-SOURCE VOLTAGE V DS (V)CAPACITANCE – V DSC A P A C I T A N C E C (p F )0.11 10 100CASE TEMPERATURE Tc (°C)D R A I N -S O U R CE O N R E SI S T A N C E R D S (O N ) ( Ω)D R A I N P O WE RD I S S I P A T I O N P D (W )CASE TEMPERATURE Tc (°C)P D – TcI DR – V DSDRAIN-SOURCE VOLTAGE V DS (V)D R A I N RE V E R S E C U R R E N T I D R (A )TOTAL GATE CHARGE Q g (nC)G A T E -S O U R C E V O L T A G E V G S (V )DYNAMIC INPUT / OUTPUTCHARACTERISTICSD R A I N -S O U R CE V O L T A G E V D S (V )0 10 20 3050404V th – TcG A T E T H R E S H O L D V O L T A G E V t h (V )CASE TEMPERATURE Tc (°C)−80−40 0 4080 120 1602COMMON SOURCE 0 40 80 120 160R – TCHANNEL TEMPERATURE (INITIAL)T ch (°C)E AS – T chA VA L A N C H E EN E R G YE A S (m J )r th – t wPULSE WIDTH t w (s)0.001N O R MA L I Z E D T R A N S I E N T T H E R MA L I M P E D A N C E r t h (t )/R t h (c h -c )−15 15 TEST CIRCUITWAVE FORMBR G = 25 ΩV DD = 90 V, L = 8.3mH⎟⎟⎠⎞⎜⎜⎝⎛−⋅⋅⋅=V DD B VDSS B VDSS 2I L 21ΕAS25 50 75 100 125150DRAIN-SOURCE VOLTAGE V DS (V)SAFE OPERATING AREAD R A I N C U R RE N T I D (A )RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。