IXFN60N60中文资料

F CB20N60F 600V N-CHANNEL F RF ETDecemb er 2006SuperFETGDFCB20N60F 600V N-CHANNEL FRFETPack age Mark ing and Ord ering I nf ormationDev ice Mark ingDev icePack ageReel Siz eTape W id thQuantityFCB20N60FFCB20N60FTMD2-Pak330mm24m800Electrical CharacteristicsT C = 25°C unless otherwise notedSymbolParameterCond itionsMinTypMax UnitsOf f Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250P A, T J = 25q C 600----V V GS = 0V, I D = 250P A, T J = 150q C --650--V 'BV DSS /'T J Breakdown Voltage Temperature CoefficientI D = 250P A, Referenced to 25q C --0.6--V/q C BV DSS Drain-Source Avalanche Breakdown VoltageV GS = 0V, I D = 20A --700--V I DSS Z ero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125q C --------10100P A P A I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250P A 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10V, I D = 10A --0.150.19:g FS Forward Transconductance V DS = 40V, I D = 10A (Note 4)--17--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--23703080pF C oss Output Capacitance--12801665pF C rss Reverse Transfer Capacitance --95--pF C oss Output CapacitanceV DS = 480V, V GS = 0V, f = 1.0MHz --6585pF C oss eff.Effective Output Capacitance V DS = 0V to 400V, V GS = 0V --165--pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 300V, I D = 20A R G = 25:(Note 4, 5)--62135ns t r Turn-On Rise Time --140290ns t d(off)Turn-Off Delay Time --230470ns t f Turn-Off Fall Time --65140ns Q g Total Gate Charge V DS = 480V, I D = 20A V GS = 10V(Note 4, 5)--7598nC Q gs Gate-Source Charge --13.518nC Q gd Gate-Drain Charge--36--nCDrain-Source Diod e Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----20A I SM Maximum Pulsed Drain-Source Diode Forward Current ----60A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 20A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 20AdI F /dt =100A/P s (Note 4)--160--ns Q rrReverse Recovery Charge-- 1.1--P CNOTES:1. Repetitive Rating: Pulse width limited by maximum j unction temperature2. I AS = 10A, V DD = 50V, R G = 25:, Starting T J = 25q C3. I SD d 20A, di/dt d 1200A/P s, V DD d BV DSS , Starting T J = 25q C4. Pulse Test: Pulse width d 300P s, Duty Cycle d 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsFCB20N60F 600V N-CHANNEL FRFETFCB20N60F 600V N-CHANNEL FRFETFCB20N60F 600V N-CHANNEL FRFETFCB20N60F 600V N-CHANNEL FRFETPeak Diode Recovery dv/dt Test Circuit & WaveformsFCB20N60F 600V N-CHANNEL FRFET。

FKN1N60SA TRIAC (Silicon Bidirectional Thyristor)tmAugust 2006FKN1N60SATRIAC (Silicon Bidirectional Thyristor)Application Explanation•Switching mode power supply, light dimmer, electric flasher unit, hair drier •TV sets, stereo, refrigerator, washing machine•Electric blanket, solenoid driver, small motor control •Photo copier, electric toolAbsolute Maximum Ratings T a= 25°C unless otherwise notedThermal CharacteristicsNote1: Infinite cooling condition.Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)SymbolParameterValueRatingUnitsV DRM V RRM Peak Repetitive Off-State Voltage Sine Wave 50 to 60Hz, Gate Open 600V I T (RMS) RMS On-State Current Commercial frequency, sine full wave 360° conduction, Tc= 70 ℃ 1.0A I TSMSurge On-State CurrentSinewave 1 full cycle, peak value, non-repetitive50Hz 9A 60Hz10A I 2t I 2t for FusingValue corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms0.41A 2s P GM Peak Gate Power Dissipation 5W P G (AV) Average Gate Power Dissipation 0.1W V GM Peak Gate Voltage 5V I GM Peak Gate Current 1A T J Junction Temperature - 40 ~ 125°C T STGStorage Temperature- 40 ~ 125°CSymbolParameterValueUnitsR θJC Thermal Resistance, Junction to Case (note1)40°C/W R θJAThermal Resistance, Junction to Ambient (note2)160°C/W1321: T 12: Gate 3: T 21 2 3TO-92Commutation dv/dt testDevice Test Condition Commutating voltage and current waveforms(inductive load)FKN1N60SA 1. Junction TemperatureT J=125°C2. Rate of decay of on-statecommutating current (di/dt)C 3. Peak off-state voltageV D = 300V Supply VoltageMain CurrentMain VoltageTimeTimeTimeV D(dv/dt)C(di/dt)CPackage Marking and Ordering InformationDevice Marking Device Package Packing Tape Width Quantity K1N60SA FKN1N60SA TO-92Bulk----DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or In Design This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. I20。