VHF-UHF功率放大模块资料
部分大功率功放模块和常用高频发射管的参数！
高频功率放大模块 t"Io*
型号 频率 功率 型号 频率 功率 gE\M
M57704EL 335-360M 13W M67741L 135-160M 30W Y]O7
M57704L 400-420M 13W M67741H 150-175M 30W k
M57704H 450-470M 13W M67742 68-88M 30W 14)
M57706 145-175M 8W M67743L 68-81M 7W o
M57710A 156-160M 30W M67743H 77-88M 7W X
M57716 430-450M 17W M67748L 135-150M 7W AqvKh@
M57719L 135-145M 14W M67748H 150-175M 7W ?31x
M57719 145-175M 14W M67749L 400-430M 7W L-g
M57721L 350-400M 7W M67749H 440-470M 7W BKS!
M57726 144-148M 43W M67760LC 806-870M 20W iQa
M57729EL 335-360M 30W M67775 1465-1477M 7.5W wPp
M57729SL 360-380M 30W M67776H 896-941M 5W CS~o
M57729UL 400-420M 30W 4(
2SC1162Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
1. Emitter2. Collector3. BaseTO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
ItemSymbolRatingsUnit
Collector to base voltageVCBO35V
Collector to emitter voltageVCEO35V
Emitter to base voltageVEBO5V
Collector currentIC2.5A
Collector peak currentIC(peak)3A
Collector power dissipationPC0.75W
PC*110W
Junction temperatureTj150°C
Storage temperatureTstg–55 to +150°C
Note:1.Value at TC = 25°C.2SC1162
2Electrical Characteristics (Ta = 25°C)
ItemSymbolMinTypMaxUnitTest conditions
Collector to base breakdownvoltageV(BR)CBO35——VIC = 1 mA, IE = 0
Collector to emitter breakdownvoltageV(BR)CEO35——VIC = 10 mA, RBE = ∞
Emitter to base breakdownvoltageV(BR)EBO5——VIE = 1 mA, IC = 0
Collector cutoff currentICBO——20µAVCB = 35 V, IE = 0
2SC2732Silicon NPN Epitaxial
Application
UHF frequency converter
Outline
1
23
1. Emitter
2. Base
3. CollectorMPAK2SC2732
2Absolute Maximum Ratings (Ta = 25°C)
ItemSymbolRatingsUnit
Collector to base voltageV
CBO30V
Collector to emitter voltageV
CEO25V
Emitter to base voltageV
EBO4V
Collector currentI
C20mA
Collector power dissipationP
C150mW
Junction temperatureTj150°C
Storage temperatureTstg–55 to +150°C
Electrical Characteristics (Ta = 25°C)
ItemSymbolMinTypMaxUnitTest conditions
Collector to base breakdown
voltageV
(BR)CBO30——VI
C = 10 µA, I
E = 0
Collector to emitter breakdown
voltageV
(BR)CEO25——VI
C = 1 mA, R
BE = ∞
Emitter to base breakdown
voltageV
(BR)EBO4——VI
E = 10 µA, I
C = 0
Collector cutoff currentI
CBO——0.5µAV
CB = 10 V, I
C = 0
Collector to emitter saturation
voltageV
CE(sat)——5VI
C = 10 mA, I
B = 1 mA
DC current transfer ratioh
FE3060—V
2SA1037AK / 2SA1576A / 2SA1774 /Transistors 2SA2029 / 2SA933ASGeneral Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /2SA933AS
!Features1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC5658 /2SC1740S.
!StructureEpitaxial planar type.PNP silicon transistor!External dimensions (Units : mm)2SA1037AK
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗Abbreviated symbol : F ∗
∗ Denotes hFEAbbreviated symbol : F ∗ROHM : SMT3EIAJ : SC-59(3) Collector(1) Emitter(2) BaseEach lead has same dimensions0.80.150to0.10.3to0.61.1(2)(1)
2.81.60.4(3)2.91.90.950.95
2SA1774
ROHM : EMT3EIAJ : SC-75A(3) Collecto(1) Emitter(2) Base0.70.150.1Min.0.550to0.10.21.61.61.00.30.8(2)0.50.5(3)0.2(1)2SA1576A
ROHM : UMT3EIAJ : SC-70(3) Collector(1) Emitter(2) BaseEach lead has same dimensions1.252.10.3
