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2SK1527中文资料

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Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test
0.01 10 µ
1
10
Switching Time Test Circuit Vin Monitor
Waveforms 90% Vout Monitor
D.U.T RL 50 Ω Vin 10 V VDD . = . 30 V
Vin Vout
10% 10% 90% 90% td (off) 10%
Switching Characteristics td (off)
ID = 30 A
16
200 100 50 tr
600
12
tf td (on)
400
8 VDD = 400 V 250 V 100 V 80 240 320 160 Gate Charge Qg (nc) 400
200
4
20 10 0.5
30
20 10 V VGS = 0, –5 V
10
0 0 2.0 0.4 0.8 1.6 1.2 Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1 D=1 0.5 0.3 0.2
Typical Transfer Characteristics VDS = 10 V Pulse Test
30 4.5 V 20
30 Ta = 75°C 25°C –25°C
20
10
VGS = 4 V
10
0
4 12 16 8 Drain to Source Voltage VDS (V)
20
0
2 6 8 10 4 Gate to Source Voltage VGS (V)
2SK1526, 2SK1527
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speent No secondary breakdown Suitable for switching regulator and DC-DC converter
Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (V) 800 VDD = 100 V 250 V 400 V VGS VDS 20 Gate to Source Voltage VGS (V) 1,000 500 Switching Time t (ns)
Outline
TO-3PL
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1526, 2SK1527
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1526 2SK1527 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 0.5 VGS = 10 V Pulse Test ID = 50 A 20 A 100 50
Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test TC = –25°C 25°C 75°C
td (on)
tr
tf
7
元器件交易网
6.0 ± 0.2 20.0 ± 0.3 φ3.3 ± 0.2 5.0 ± 0.2
Unit: mm
26.0 ± 0.3
20.0 ± 0.6 2.5 ± 0.3
1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 1.0 0.6 +0.25 –0.1 2.8 ± 0.2
Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current
2SK1526 I DSS 2SK1527
Gate to source cutoff voltage
Static Drain to source 2SK1526 RDS(on) on state resistance 2SK1527
VGS = 10 V, PW = 2 µs . duty < 1%, VDD = . 30 V 1 10 20 5 2 Drain Current ID (A) 50
0 0
6
2SK1526, 2SK1527
Reverse Drain Current vs. Sourse to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40
2 1
Symbol VDSS
Ratings 450 500 ±30 40 160 40 250 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1526, 2SK1527
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1526 V(BR)DSS 2SK1527 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 20 — — — — — — — — — — 0.11 0.12 30 5800 1430 150 60 175 420 160 1.2 600 3.0 0.15 0.16 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 40 A, VGS = 0 I F = 40 A, VGS = 0, diF/dt = 100 A/µs I D = 20 A, VGS = 10 V, RL = 1.5 Ω I D = 20 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 20 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
0.4
0.3
20 10 5
0.2
10 A
0.1
2 1 0.5
0 –40
0 80 120 40 Case Temperature TC (°C)
160
1
5 20 2 10 Drain Current ID (A)
50
5
2SK1526, 2SK1527
Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time t rr (ns) di/dt = 100 A/µs, VGS = 0 Pulse Test Capacitance C (pF) 1,000 10,000 Typical Capacitance vs. Drain to Source Voltage Ciss
rea s a n) i h o t 10 in DS ( 10 µs ion by R t 0 a µs er ed PW Op limit 1m DC = is s 10 Op m er s( ati 1 on Sh (T ot ) C = 25 °C )
Maximum Safe Operation Area
2,000 1,000 500
Coss
200 100 50 1 2 5 20 50 10 Reverse Drain Current IDR (A) 100
100 Crss VGS = 0 f = 1 MHz 10 0 20 50 10 30 40 Drain to Source Voltage VDS (V)

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2SK2652-01中文资料

2SK2652-01中文资料

Allowable Power Dissipation vs. TC
PD=f(Tc)
↑
10
↑
→ Starting Tch [°C]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
↑
12
Zth(ch-c) [K/W]
→ VSD [V]
Transient Thermal impedance
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑ 4
↑ 5
↑ 6
VGS(th) [V]
gfs [S]
RDS(ON) [Ω]
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑ 7
→ ID [A]
Avalanche Energy Derating
Zthch=f(t) parameter:D=t/T
ID [A]
PD [W]
→ Tc [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
I AR
6
Avalanche Energy
E AS
277
Max. Power Dissipation
PD
125
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
900V 2,5Ω 6A 125W > Outline Drawing
2SK2850-01中文资料

2SK2850-01中文资料


Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg
Ratings 900 ±6 ±24 ±30 6 277 125
+150 -55 to +150
*1 L=14.1mH, Vcc=90V
Unit
V A A V A mJ W °C °C *2 Tch<=150°C
1.0 900
10
Max. Units
V
3.5 V
500
µA
1.0 mA
100
nA
2.50 Ω
S
1450
pF
210
120
30
ns
80
170
90
A
1.5 V
ns
µC
Thermalcharacteristics Item Thermal resistance
Symbol Rth(ch-c)
Rth(ch-a)
Zthch-c [K/W]
Transient thermal impedande Zthch=f(t) parameter:D=t/T
101
100 D=0.5
0.2
0.1 10-1 0.05
0
0.02 0.01
t t
D= T
T
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t [s]
4
100
150
Eas [mJ]
10-1
10-2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
100 50 0 0
2SK1522中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」

2SK1522中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」

6.瑞萨科技公司事先书面批准,不得翻印或再现 全部或部分这些物料.
7.如果这些产品或技术受日本出口管理限制,必须是 日本政府根据许可证出口,不能导入比批准目地以外国家.
禁止任何转移或再出口违反出口管制法律和日本及/或目地国家相关规定.
8.请与瑞萨科技公司对这些材料或产品进一步详情 其中所载.
芯片中文手册,看全文,戳
V GS = ±25 V, V DS = 0 V DS = 360 V, V GS = 0 V DS = 400 V, V GS = 0 ID =1毫安,V DS = 10 V ID = 25 A, V GS = 10 V * 1
ID = 25 A, V DS = 10 V * 1 VDS = 10 V, V GS = 0, F = 1兆赫
芯片中文手册,看全文,戳
2SK1521, 2SK1522
绝对最大额定值
(Ta = 25°C)
项目
漏极至源极电压
2SK1521
2SK1522
门源电压
漏极电流
漏电流峰值
身体流失二极管反向漏电流
频道耗散
通道温度
储存温度
注：1.PW
10 µs, 占空比
1%
2.价值在T C = 25°C
符号
ID = 25 A, V GS = 10 V, RL = 1.2
IF = 50 A, V GS = 0
IF = 50 A, V GS = 0, di F/ DT = 100 A /μs的
3
—
远期转移导纳
|yfs|
22
输入电容
Ciss —
输出电容
Coss —
反向传输电容
Crss —
导通延迟时间 上升时间 关断延迟时间 下降时间 身体向前漏二极管 电压
2SK1530Y中文资料

2SK1530Y中文资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type2SK1530High-Power Amplifier Applicationz High breakdown voltage: V DSS = 200V z High forward transfer admittance : |Y fs | = 5.0 S (typ.)z Complementary to 2SJ201Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltage V DSS 200 V Gate −source voltage V GSS±20 V Drain current(Note 1)I D 12 A Drain power dissipation (Tc = 25°C) P D 150 W Channel temperature T c 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) arewithin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).MarkingElectrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitDrain cut −off current I DSS V DS = 200 V, V GS = 0 — — 1.0 mA Gate leakage currentI GSS V DS = 0V, V GS = ±20 V — — ±0.5μA Drain −source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 200 — — V Drain −source saturation voltage V DS (ON) I D = 8 A, V GS = 10 V — 2.5 5.0 V Gate −source cut −off voltage (Note 2) V GS (OFF) V DS = 10 V, I D = 0.1 A0.8 — 2.8 V Forward transfer admittance |Y fs | V DS = 10 V, I D = 5 A— 5.0 — SInput capacitance C iss V DS = 30 V, V GS = 0, f = 1 MHz — 900 — Output capacitance C oss V DS = 30 V, V GS = 0, f = 1 MHz — 180 — Reverse transfer capacitanceC rssV DD = 30 V, V GS = 0, f = 1 MHz—100—pF Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V GS (OFF) Classification0: 0.8~1.6Y: 1.4~2.8This transistor is an electrostatic-sensitive device.Please handle with caution.Unit: mmJEDEC ― JEITA―TOSHIBA 2-21F1B Weight: 9.75 g (typ.)Switching Time Test Circuit WaveformsRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。