SS2P3中文资料
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VISHAYSS2P2, SS2P3 & SS2P4Document Number 88910
02-Nov-04Vishay Semiconductors
www.vishay.com1DO-220AA (SMP)New ProductHigh Current Density Surface Mount Schottky Barrier RectifiersMajor Ratings and Characteristics
Features •Very low profile - typical height of 1.0mm •Ideal for automated placement •Low forward voltage drop, low power losses •High efficiency •Low thermal resistance •Meets MSL level 1 per J-STD-020C •AEC-Q101 qualifiedIF(AV) 2 AVRRM 20 V, 30 V, 40 VIFSM50 AEAS 11.25 mJVF0.50 VTj max.150 °C
Typical ApplicationsFor use in low voltage high frequency inverters, free-wheelling, dc-to-dc converters, and polarity protectionapplicationsMechanical DataCase: DO-220AA (SMP)Epoxy meets UL-94V-0 Flammability ratingTerminals: Matte Tin plated (E3 Suffix) leads, solder-able per J-STD-002B and MIL-STD-750, Method2026Polarity: Color band denotes the cathode endMaximum RatingsTA = 25°C, unless otherwise specifiedParameterSymbolSS2P2SS2P3SS2P4UnitDevice marking code 222324Maximum repetive peak reverse voltage VRRM203040V RMS reverse voltage VRWM142128VDC blocking voltageVR203040VMaximum average forward rectified current see Fig. 1 IF(AV)2.0APeak forward surge current 10 ms single half sine-wave superimposed on rated loadIFSM50ANon-repetitive avalanche energyat IAS = 1.5 A, L = 10 mH, TJ = 25 °CEAS11.25mJVoltage rate of change (rated VR)dv/dt10000V/usOperating junction and storage temperature rangeTJ, TSTG-55 to +150°C元器件交易网www.cecb2b.comwww.vishay.com2Document Number 8891002-Nov-04VISHAYSS2P2, SS2P3 & SS2P4Vishay Semiconductors Electrical CharacteristicsTA = 25°C, unless otherwise specified
Notes: (1) Pulse test: 300µs pulse width, 1 % duty cycleThermal CharacteristicsTA = 25°C, unless otherwise specifiedNotes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is mea-sured at the terminal of cathode band. RθJC is measured at the top centre of the bodyParameterTest conditionSymbolTypMax.UnitMaximum instantaneous forward voltage(1) at IF = 2 A, TJ = 25 °Cat IF = 2 A, TJ = 125 °CVF0.500.430.550.50V Maximum reverse current at rated VRM(1) TJ = 25 °CTJ = 125 °CIR-815015µAmA Typical junction capacitance at 4.0 V, 1 MHz CJ 110pF
ParameterSymbolSS2P2SS2P3SS2P4UnitTypical thermal resistance(1) RθJARθJL RθJC 1151520°C/W元器件交易网www.cecb2b.comVISHAYSS2P2, SS2P3 & SS2P4Document Number 8891002-Nov-04Vishay Semiconductors
www.vishay.com3 Ratings and Characteristics Curves (TA = 25 °C unless otherwise specified)
Figure1. Forward Current Derating Curve
Figure2. Maximum Non-Repetitive Peak Forward Surge Current
Figure3. Typical Instantaneous Forward Characteristics
02.4
8090100110120130140150Average Forward Rectified Current (A)
Lead Temperature (°C)1.62.0
0.40.81.2TL measuredat the cathode band terminal
Peak Forward Surge Current (A)
Number of Cycles at 50 Hz 110100102030
04050
0.10.30.50.70.91.11.3Instantaneous Forward Voltage (V)0.1101100
Instantaneous Forward Current (A)TJ = 150°CTJ = 25°CTJ = 125°
CFigure4. Typical Reverse Leakage Characteristics
Figure5. Typical Junction Capacitance
Figure6. Typical Transient Thermal impedanceInstantaneous Reverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%) 204060801000.11101001000
103050709010000010000TJ = 25°CTJ = 125°CTJ = 150°C
Reverse Voltage (V)Junction Capacitance (pF)
0.111010011001000
0.01110100110100
t, Pulse Duration (sec.)Transient Thermal Impedance (°C/W)
0.11000元器件交易网www.cecb2b.comwww.vishay.com4Document Number 8891002-Nov-04VISHAYSS2P2, SS2P3 & SS2P4Vishay Semiconductors Package Dimensions in Inches (millimeters)
0.000 (0.00)0.012 (0.30)0.013 (0.35)0.004 (0.10)0.018 (0.45)0.006 (0.15)0.045 (1.15)0.033 (0.85)0.036 (0.91)0.024 (0.61)0.016 (0.40)0.032 (0.80)0.053 (1.35)0.041 (1.05)0.012 (0.30) REF
0.105(2.67)0.025(0.635)0.100(2.54)0.030(0.762)0.050(1.27)Cathode band
0.142 (3.61)0.126 (3.19)0.158 (4.00)0.146 (3.70)0.086 (2.18)0.074 (1.88)0.087 (2.20)0.103 (2.60)DO-220AA (SMP)元器件交易网www.cecb2b.com
