2SD2481资料

IGBT和功率MOSFES使用的双重SCALE驱动器2SK315A

描述

CONCETP公司的SCALE驱动器是为IGBT和功率MOSTET的可靠驱动和安全工作是基于芯片装置而发展研制的。

“SCALE”的名称是根据SCALE系列驱动器的最显著特性的单词首字母的缩写：

SCALE = Scaleable, Compact,

All purpose, Low cost and Easy

to use.

SCALE = 可缩放，简洁的，通用的，低成本和易于应用。

SCALE驱动器是“1998 瑞士技术中心”竞赛组织的成功方案。和CSALE驱动器最杰出的ABB瑞士AG开发荣誉奖 “1998最优电力电子项目”。

产品特点

 1200V和1700V的IGBT配套

 短路和过电流保护

 非常可靠，高耐用寿命

 ±15A的高门极电流

 4000VAC电气隔离

 电气隔离资质认证

 电源和自身监控的控制

 开关频率从DC到100KHz

 占空因数：0---100%

 高dv/dt 抗扰性，保证＞100,000V/us

 完全用DC/DC变换

应用

 变频器

 电机驱动技术

 牵引

 铁路供电

 变流

 能源工程

 开关电源

 放射学和激光科技

 DC/DC变换

 研究

 RF（射频）发生器和转换

方块图 振荡器电平输入界面电气隔离功率电平驱动功率半导体( 外部 )SCALE 驱动模块PWMGNDVDCGNDVDDLDIIGDIGDViso1Viso2Viso1Viso2RthRgRgRth

图1 2SD315A 方块图

引脚描述

引脚 描述 功能 引脚 描述 功能

1 VDD +15电子类输入侧 44 G1 栅极通道1

2 VDD +15电子类输入侧 43 G1 栅极通道1

3 SO1 状态输出通道1 42 COM1 虚拟公共通道1

1SPTECHSiliconNPNPowerTransistor2SD2499

DESCRIPTION·HighBreakdownVoltage-:VCBO=1500V(Min)·HighSwitchingSpeed·LowSaturationVoltage·Built-inDamperDiode

APPLICATIONS·ColorTVhorizontaldeflectionoutputapplicationsABSOLUTE

MAXIMUM

RATINGS(T

a=25℃)SYMBOLPARAMETERVALUEUNIT

VCBOCollector-BaseVoltage1500V

VCEOCollector-EmitterVoltage600V

VEBOEmitter-BaseVoltage5V

ICCollectorCurrent-Continuous6A

ICPCollectorCurrent-Pulse12A

IBBaseCurrent-Continuous3A

PCCollectorPowerDissipation@TC=25℃50W

TJJunctionTemperature150℃

TstgStorageTemperatureRange-55~150℃

2SPTECHSiliconNPNPowerTransistor2SD2499

ELECTRICALCHARACTERISTICSTC

=25

℃unlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNIT

V(BR)EBOEmitter-BaseBreakdownVoltageIE=200mA;IC=05V

VCE(sat)Collector-EmitterSaturationVoltageIC=4A;IB=0.8A5.0V

VBE(sat)Base-EmitterSaturationVoltageIC=4A;IB=0.8A1.3V

UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR

1 of 4 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R209-003,C MEDIUM POWER LOW VOLTAGE TRANSISTOR 󰂄 FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 󰂄 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-126C1TO-1261TO-25211TO-2511TO-92NL*Pb-free plating product number: 2SD882L󰂄 ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package1 2 3 Packing 2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126CE C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NLE C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NLE C B Bulk 2SD882L-x-T60-R(1)Packing Type(2)Package Type(3)Rank(4)Lead Plating(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel(2) T60: TO-126, T6C: TO-126C, TM3: TO-251, TN3: TO-252, T9N: TO-92NL(3) x: refer to Classification of hFE2(4) L: Lead Free Plating, Blank: Pb/Sn 元器件交易网2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 QW-R209-003,C 󰂄 ABSOLUTE MAXIMUM RATING (Ta=25󰄊, unless otherwise specified ) PARAMETER SYMBOLRATINGS UNITCollector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V DC IC 3 A Collector Current Pulse ICP 7 A Base Current IB 0.6 A TO-92NL 0.5 W Collector Dissipation 󰀉Ta=25󰄊󰀊 TO-251/TO-252/ TO-126/TO-126CPC 1 W Junction Temperature TJ +150 󰄊 Storage Temperature TSTG -55 ~ +150 󰄊 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITCollector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 30 V Emitter-Base Breakdown Voltage BVEBO IE=100µA, IC=0 5 V Collector Cut-off Current ICBO VCB=30V, IE=0 1000 nA Emitter Cut-off Current IEBO VEB=3V, IC=0 1000 nA hFE1 VCE=2V, IC=20mA 30 200 DC Current Gain (Note 1) hFE2 VCE=2V, IC=1A 100 150 400 Collector-Emitter Saturation Voltage VCE(SAT)IC=2A, IB=0.2A 0.3 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=2A, IB=0.2A 1.0 2.0 V Current Gain Bandwidth Product fT VCE=5V, IC=0.1A 80 MHzOutput Capacitance Cob VCB=10V, IE=0, f=1MHz 45 pF Note 1:󰀁Pulse test:󰀁PW<300µs,󰀁Duty Cycle<2% 󰂄 CLASSIFICATION OF hFE2 RANK Q P E RANGE 100-200 160-320 200-400 元器件交易网2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 QW-R209-003,C 󰂄 TYPICAL CHARACTERISTICS Static CharacteristicsCollector-Emitter voltage (V)Collector Current, Ic (A)04812162000.40.81.21.6Case Temperature, TC(℃) Derating Curve of Safe Operating AreasDerating, IC(%)200150100500-50050100150S/b limitedDissipation limitedIB=9mAIB=8mAIB=7mAIB=6mAIB=5mAIB=4mAIB=3mAIB=2mAIB=1mA Current Gain-Bandwidth Product Current Gain-Bandwidth Product, FT(MHz)Collector-Emitter VoltageCollector Current, IC(A)Safe Operating AreaIC(max), Pulse10mS1mS0.1mSCollector Current, Ic (A)10310210110010-210-110010110110010-110-2100101102IC(max), DCVCE=5VIB=8mA DC Current GainCollector Current, IC(mA)Collector Current, IC(mA)Saturation VoltageDC Current Gain, hFESaturation Voltage (mV)103102101100100101103104VCE=2V104103102100101102104101100103VBE(SAT)VCE(SAT) 元器件交易网2SD882 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 QW-R209-003,C 󰂄 TYPICAL CHARACTERISTICS(Cont.) Collector Output CapacitanceCollector-Base Voltage (V)Output Capacitance (pF)100103IE=0f=1MHz10210110010-110-210-3 UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. 元器件交易网

April 2011Doc ID 018729 Rev 11/10

102SD1047

High power NPN epitaxial planar bipolar transistor

Features

■High breakdown voltage VCEO = 140 V

■Typical ft = 20 MHz

■Fully characterized at 125 oC

Application

■Power supply

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1.Internal schematic diagramTO-3P123

Table 1.Device summary

Order codeMarkingPackagePackaging

2SD1047 2SD1047TO-3PTube

/Electrical ratings2SD10472/10Doc ID 018729 Rev 11 Electrical ratings

Table 2.Absolute maximum ratingsTable 3.Thermal data SymbolParameterValueUnit

VCBOCollector-base voltage (IE = 0) 200V

VCEOCollector-emitter voltage (IB = 0) 140V

VEBOEmitter-base voltage (IC = 0) 6V