当前位置：文档之家 › Detailed design of the RF source for the 1MV neutral beam test facility[1]

Detailed design of the RF source for the 1MV neutral beam test facility[1]

  • 格式：pdf
  • 大小：2.13 MB
  • 文档页数：6

FusionEngineeringandDesign84(2009)1253–1258ContentslistsavailableatScienceDirectFusionEngineeringandDesign

journalhomepage:www.elsevier.com/locate/fusengdes

DetaileddesignoftheRFsourceforthe1MVneutralbeamtestfacilityD.Marcuzzia,M.DallaPalmaa,M.Paveia,∗,B.Heinemannb,W.Krausb,R.RiedlbaConsorzioRFX,Euratom-ENEAAssociation,CorsoStatiUniti4,I35127Padova,Italy

bMax-Planck-InstitutfürPlasmaphysik,EuratomAssociation,Botzmannstr.2,D-85748Garching,Germany

articleinfoArticlehistory:Availableonline24January2009Keywords:ITERNBIIonsourceRadiofrequencyabstractIntheframeworkoftheEUactivitiesforthedevelopmentoftheNeutralBeamInjectorforITER,thedetaileddesignoftheRadioFrequency(RF)drivennegativeionsourcetobeinstalledinthe1MVITERNeutralBeamTestFacility(NBTF)hasbeencarriedout.ResultscomingfromongoingR&DonIPPtestbeds[A.Stäbleretal.,DevelopmentofaRF-DrivenIonSourcefortheITERNBISystem,thisconference]andthedesignofthenewELISEfacility[B.Heinemannetal.,DesignoftheHalf-SizeITERNeutralBeamSourceTestFacilityELISE,thisconference]broughtseveralmodificationstothesolutionbasedonthepreviousdesign.AnassessmentwascarriedoutregardingtheBack-StreamingpositiveIons(BSI+)thatimpingeonthebackplatesoftheionsourceandcausehighandlocalizedheatloads.Thisledtotheredesignofmostheatedcomponentstoincreasecooling,andtodifferentchoicesfortheplasmafacingmaterialstoreducetheeffectsofsputtering.Thedesignoftheelectriccircuit,gassupplyandtheotherauxiliarysystemshasbeenoptimized.Inte-grationwithothercomponentsofthebeamsourcehasbeenrevised,withregardstotheinterfaceswiththesupportingstructure,theplasmagridandtheflexibleconnections.Inthepaperthedesignwillbepresentedindetail,aswellastheresultsoftheanalysesperformedforthethermo-mechanicalverificationofthecomponents.©2009ElsevierB.V.Allrightsreserved.

1.IntroductionTheionsourcefortheITERNBIisrequested[3]tosupplya40AacceleratedD−/H−beamwith20/28mA/cm2currentdensityat1MeV,0.3Pasourcepressure,3600spulselength,1.5×0.6m2cross-sectionwithatotalapertureareaontheplasmagridof0.2m2.In2007ITERhaschangedthebaselinefortheplasmasourceoftheneutralbeaminjector,fromthearcdrivenconcepttotheRFdrivensolution.Meanwhile,thedetaildesignoftheRFsourcefortheITERNBIwasdevelopedintheframeoftheTW6-THHN-NBD1EFDAtask,startingfromtheoutlineactivitycarriedoutwithinthepreviouscontractandalreadyreportedin[4].Severalmodificationswereintroduced,asconsequenceoffeed-backsfromIPPcomingoutfromexperimentalcampaignsonexistingtestbedsandfromtheprogressinthedesignofthenewELISEfacility[1,2,5].Gasionisationwithintheacceleratorproducesalsopositiveionsthatareacceleratedbackintothesourceandfocusedagainstrearverticalplates[6],withhighlylocalizedadditionalheatloadthatwastakenintoaccountforarobustdesign.∗Correspondingauthor.E-mailaddress:mauro.pavei@igi.cnr.it(M.Pavei).TheRFsourcewasintegratedwiththeSINgleGAP(SINGAP)accelerator,inanewsolutioncompatiblewiththeMultiApertureMultiGrid(MAMuG)accelerator[7],inlinewiththeEFDAtaskover-allaim,andallinterfaceswithadjacentcomponentsweredefined.Moreover,thedesignwasorientedfortheinjectortestfacilitythatwillbehostedinPadova,priortotheITERexperimentalphaseinordertodemonstratetargetperformances.

2.Designdescription2.1.GeneraldescriptionTheRFionsourceisacomplexchamber,featuringamainspace,enclosedinastructurecalledsourcecaseandfacingtheplasmagrid,onwhosesurfacemostofnegativeionsaregener-ated,andeightrearsmallercylindricalchamberscalleddrivers,wherethegasisinjected(hydrogenordeuterium),asshowninFig.1.RFcoilswoundaroundthelateralwallofthedriversandconnectedtoa1MHzRFgeneratortransfertheRFpowerandionizethegas:theresultingplasmaflowsthenintothemainchamber,wheretheadditionalpresenceofcaesiumenhancesthenumberofnegativeionsgeneratedonthesurfaceoftheplasmagrid.

0920-3796/$–seefrontmatter©2009ElsevierB.V.Allrightsreserved.doi:10.1016/j.fusengdes.2008.12.0841254D.Marcuzzietal./FusionEngineeringandDesign84(2009)1253–1258Fig.1.IsometricviewsoftheRFsource—rearandfrontside(rearbusbarshidden).2.2.DriversThedriversarethecomponentswherethepoweristransferredandtheplasmaisgenerated.ThedesignofthenewIPPfacility(ELISE)introducedsomemodi-ficationsonthedrivers[2]:sizeandinter-axishavebeenincreased,inordertooptimizesourceparameters,uniformityinparticular,asshowninFig.2.Thedriversarepowered(100kW/driver)bypairsofRFcoils(coppertubehaving8mmODand6mmID,6½turns)soasin-gletube13.5mlongiswoundaroundtwoaluminacylinders.TheendpointsofeachtubeareelectricallyconnectedtothecapacitorsoftheRFcircuitwhereaswaterflowsfrom/tohollowlinesthatareelectricallyinsulatedwithhollowceramicbreaks.TheFaradayShield(FS)wasmodifiedinordertoenhancetheprotectionofthealuminacasefromplasmainteraction.Anaddi-tionalinnerverticalCuCrZrbackplatewasaddedtoexhaustthepowerdepositedfromBSI+withacoolingcircuitindependentfromthelateralwall,withoutdecreasingtheinternalvolume,asshowninFig.3.TheupdatedconfigurationofthecoolingcircuitisdescribedinSection2.5.TheFSconsistsofabackPlate21mmthickinCuCrZralloyandelectro-depositedcopper.TheFScylindricallateralwalliscreatedFig.2.Isometricviewsofthedriver—rearandfrontside.aroundtheFSplatebycopperelectro-depositionofatotal3.5mmthickness.AthinMocoatinglayer(byphysicalvapourdeposition)isthereferencesolutionchosentobeappliedonallinnersurfacestoreducethesputteringeffectcausedbytheplasmaandtheBSI+[5].AnalternativesolutionfortheFSbackplateisconsidered,featur-ingaplasmafacing1mmthickMolayerbondedtothecopperbulk,inordertoenhancetheprotectionfromtheimpinginghighenergyionsandtominimizethesputteringeffect.SuchsolutionrequiresR&Dtobeimplemented,infactconcernsarerelatedtothebondingstressbetweenbaseplateandthethickcoatingasconsequenceoftheirdifferentthermalexpansioncoefficient.2.3.Sourcecase

合集下载

15693协议中文版

15693协议中文版

ISO/IEC FINAL COMMITTEE DRAFT 15693-1
© ISO
ISO/IEC FCD 15693-1 ISO/IEC JTC1/SC17 N 1355
Identification cards — Contactless integrated circuit(s) cards —
International Standards are drafted in accordance with the rules given in the ISO/IEC Directives, Part 3.
In the field of information technology, ISO and IEC have established a joint technical committee, ISO/IEC JTC1. Draft International Standards adopted by the joint technical committee are circulated to national bodies for voting. Publication as an International Standard requires approval by at least 75 % of the national bodies casting a vote.
Vicinihysical characteristics
Contents
1 Scope ............................................................................................................................. 2 2 Normative references ................................................................................................... 2 3 Definitions, abbreviations and symbols..................................................................... 3 4 Physical characteristics .............................................................................................. 3 Table 1 – Frequency vs Magnetic Field Strength .......................................................... 4 Table 2 - Frequency vs Electric Field Strength............................................................. 4 Annex A (informative) Standards compatibility and Surface quality…………………..6 Annex B A (informative) Hole Slot .................................................................................. 7 Annex C (informative) Bibliography ............................................................................... 8 Figure B 1 – Hole Slot for Portrait Orientation……………………………………………..7 Figure B 2 – Hole Slot for Landscape Orientation ........................................................ 7
采用STV0299B的中分辨率成像光谱仪信号中频接收模块设计

采用STV0299B的中分辨率成像光谱仪信号中频接收模块设计

Ｋｅ ｗｏ ｄ ： Ｔ ２ ９ ｅ ｏ ｕ ａｉ ｎ ｃ ｉ ； Ｆ ｒ ｃ ｉ ｅ ｒｍｏ ｉ； Ｐ ｙ ｒ ｓ Ｓ Ｖ０ ９ Ｂ ｄ ｍ ｄ ｌ ｔ ｈ ｐ Ｉ ｅ ｅｖ ｒ ｏ ｄ ｓ Ｆ ＧＡ ｏ ｆ
Ｍｏ ｉ（ ｄｓ中分辨率成像光谱仪） 是搭载在 ｔ ｒ 和 ａｕ 卫星 ｅ ａ ｑａ ｒ 上的一个重要的传感器， 是卫星上唯一将实时观测数据通过 Ｘ 波段 向全世界直接广播 ，并可 以免 费接 收数据 并无偿 使用的 星载仪器 ， 全球许多国家和地区都在接收和使用 Ｍｏ ｉ数据 。 ｄｓ Ｍｏ ｉ扫描周期 为 １ ７ 秒 ， ｄｓ ． ７ 每条扫描线沿扫描方 向有 １ ５ ４ ３ ４个 Ｐｘ ｌ， 卫星 轨 道 方 向有 １ ｉｅ 沿 ｓ ０个 １ ＭＤ 的 ＩＯ 白天扫 描 每 Ｋ Ｆ Ｖ。 个 点 在 两 个 Ｍｏ ｉ包 中 传 输 ， 一 个 包 传 输 Ｉ Ｏ １ ５ 第 二 ｄｓ 第 Ｆ Ｖ ～ ， 个 包 传输 ＩＯＶ６～ １ 利 用 Ｃ Ｓ 进 行 了 封装 ， Ｆ ０ Ｃ ＤＳ 使用 ＲＳ２ ５ （５ ， ２３ ２ ）进行纠错 。整个 Ｃ ＤＳ包长度 为 １２ ＣＳ ０ ４字节 。其 中 ＲＳ 编码用来对整个 Ｃ ｄｄ Ｄ ｏ ｅ ＶＣ Ｕ进 行纠错 。 裸数据 是最原始的 地面接收数据 ， 它含 有满足 Ｃ Ｓ Ｃ ＤＳ标准 （ Ｃ ＤＳ １２０Ｂ一） Ｃ Ｓ ０ ． ４ 一 的数据包（ Ａ Ｃ ＤＵ）它经 过格 式化 同步、 。 去扰 、 ＲＳ纠错 、 格式转 变 等 相 应 的 步 骤 和 程序 ， 理 成 为 Ｍｏ ｉ０ 数 据 产 品 。 ｄｓ 处 ｄｓ 级 Ｍｏ ｉ 数据产 品对气象 、农业等有极大 的指 导作用 。近几 年随着 我 国高速数据通信业务 的发展 ，尤其是卫星通信领域应用 的需 求， 自主开发实现高速的 ｍｏ ｉ 数字 接收机变得十分必要 。 ｄｓ 从 设计成本和处理数据速度综合考虑 ，本文采用通用 的数 字解 调芯片 ， 通过 对芯片外围电路的设计和对其部分功能 的控制 ，
光纤通信技术课后部分习题答案

光纤通信技术课后部分习题答案


4.51 Calculate the pulse spreading caused by chromatic dispersion for BF04431-02 multimode grade-index fiber from SpecTran, (See Figure 3.20) operating at 1300 nm. Assume = 70 nm. S: Taking 0 = 1342.5 nm, S0 = 0.097 ps
t GI
L NA 4 L NA 4 32cN 13 32cn13
1 BR 4t
where N1 core group index of refraction
Hence, BRGI
8cn13 8 3 10 8 1.486 3 4.92 10 9 bit / s 4.92Gbit / s L NA4 1 10 3 0.200 4
P 4.34
2
4
t BR
2
2
PD=2.17 dB ( realizable!)
4.56 What is the bit-rate length limitation caused by chromatic disperson for the Spectran fiber referred to in Problem 4.51? S: (BR x L)max = 1 / [4 D()] 1 4( 2 ) D
4.55 What is meant by the term dispersion power penalty? Calculate the disperson power penalty for the pulse spread obtained in Problem 4.51. The BR is 2.5 Gbit/s. S: The amount of transmitting power required for compensating the increase bit error rate (BER) cause by attenuation is called dispersion power penalty. In Problem 4.51, ttotal = tmat = 18 ns (if fiber length is 100 km) PD(dB) = -10 log10 {exp[-(1/4 ) (ttotal)2 (BR)2]} = -10 log10 {exp[-1/4 x (18 x 10-9)2 ( x 2.5 x 109)2]} = 2.17 x 104 dB, enough to burn any type of fiber, impossible. if the fiber length is 1 km:
STATEC 2011设备说明

STATEC 2011设备说明


0~999.9mV(Step 0.1 mV, Accuracy :ADC 16Bits) 2 Station Multiplexing AC Power:210~250VAC,50/60HZ,1Phase DC Power Supply:,+5V/+12V, ±15V,±24V DM2000A:±24V 2000B:±36V, Voltage control(40V~220V) 440mm(W) * 620 mm(D) * 600mm(H) 50Kg
Wide range VDS/VCB (1 to 200V) High Accuracy Sample & Holed (ADC 16Bits) Easy Operation & Maintenance Quick Set-up Installation Windows XP based Operation IE/ID – DM2000A:20A
Copyright © 2010 STATEC Co.,Ltd.
www.statec.co.kr
Ⅱ. Hardware
1. Discrete test system- DM2000A/B
The DM2000 test system series is used to measure the thermal resistance characteristics of Diodes, transistors, MOSFETs ,IGBTs The thermal resistance characteristics of the MOSFETs, Transistors, etc are measured as the temperature change (㎷) of the PN junction. Consideration of a contact check function and an oscillation detection function to prevent the wrong measurement. DM2000 is designed to have 2-channel multiplexing capability.