NT90RN1CEDC9V中文资料

Symbol Test ConditionsMaximum RatingsV DSS T J = 25°C to 150°C900V V DGR T J = 25°C to 150°C; R GS = 1 M W 900V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C26N9026A25N9025I DM T C = 25°C, pulse width limited by T JM 26N90104A 25N90100I AR T C = 25°C 26N9026A25N9025E AR T C = 25°C 64mJ E AS T C = 25°C3J dv/dt I S £ I DM , di/dt £ 100 A/m s, V DD £ V DSS 5V/ns T J £ 150°C, R G = 2 W P D T C = 25°C560W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L 1.6 mm (0.063 in.) from case for 10 s 300°CM d Mounting torqueTO-2640.4/6Nm/lb.in.WeightPLUS 247 6 g TO-26410 gSymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V DSS V GS = 0 V, I D = 3mA 900V V GS(th)V DS = V GS , I D = 8mA 3.05.0V I GSS V GS = ±20 V, V DS = 0±200nA I DSS V DS = 0.8 •V DSS T J = 25°C 100m A V GS = 0 VT J = 125°C 2mA R DS(on)V GS = 10 V, I D = 0.5 • I D2526N900.3W Note 125N900.33WSingle MOSFET DieFeatures•International s tandard p ackages •Low R DS (on) HDMOS TM process•Rugged polysilicon gate cell structure •Unclamped Inductive Switching (UIS)rated•Low package inductance -easy to drive and to protect •Fast intrinsic rectifierApplications•DC-DC converters •Battery chargers•Switched-mode a nd r esonant-mode power supplies •DC choppers •AC motor control•Temperature a nd l ighting c ontrols Advantages•PLUS 247TM package for clip or spring mounting•Space savings •High power densityHiPerFET TM Power MOSFETs98553D (9/99)PLUS 247TM (IXFX)G G = Gate D = Drain S = Source TAB = DrainSGD(TAB)TO-264 AA (IXFK)V DSS I DSS R DS(on)t rr900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 nsIXFK/IXFX 26N90IXFK/IXFX 25N90Preliminary data sheetSIXYS reserves the right to change limits, test conditions, and dimensions.Symbol Test Conditions Characteristic Values= 25°C, unless otherwise specified)(TMillimeter InchesMin.Max.Min.Max.4.825.13.190.2022.54 2.89.100.1142.00 2.10.079.0831.12 1.42.044.0562.39 2.69.094.1062.903.09.114.1220.530.83.021.03325.9126.16 1.020 1.03019.8119.96.780.7865.46 BSC.215 BSC0.000.25.000.0100.000.25.000.01020.3220.83.800.8202.29 2.59.090.1023.17 3.66.125.1446.07 6.27.239.2478.388.69.330.3423.814.32.150.1701.782.29.070.0906.04 6.30.238.2481.57 1.83.062.072。

7000 6000 5000 4000 3000 2000 1000
0 10-1
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
C iss
Coss
Crss
※ Notes :
1. VGS = 0 V 2. f = 1 MHz
100
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2500 3250 pF
-- 900 1170 pF
-- 200 260
pF
Switching Characteristics
td(on)
Turn-On Delay Time
V GS
Top : 15.0 V
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100 10-1
※ Notes : 1. 250μs Pulse Test 2. T = 25℃
C
100
101
V , Drain-Source Voltage [V] DS
元器件交易网
FQP90N08
FQP90N08
80V N-Channel MOSFET
January 2001
QFETTM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

1/7PRELIMINARY DATASeptember 2002This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.STB90NF3LLN-CHANNEL 30V - 0.0048 Ω - 80A D 2PAKLOW GATE CHARGE STripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.0048 Ω @ 10 Vs OPTIMAL R DS(on) x Qg TRADE-OFF @ 4.5 V s CONDUCTION LOSSES REDUCED s SWITCHING LOSSES REDUCEDsSURFACE-MOUNTING D 2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)DESCRIPTIONThis application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.APPLICATIONSs SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSTYPE V DSS R DS(on)I D STB90NF3LL30 V< 0.0055 Ω80 A(#)ABSOLUTE MAXIMUM RATINGS•) Pulse width limited by safe operating area.Symbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)30V V DGRDrain-gate Voltage (R GS = 20 k Ω)30V V GS Gate- source Voltage± 16V I D (#)Drain Current (continuous) at T C = 25°C 80A I D Drain Current (continuous) at T C = 100°C 80A I DM (•)Drain Current (pulsed)320A P tot Total Dissipation at T C = 25°C 200W Derating Factor 1.3W/°C T stg Storage Temperature-55 to 175°CT jMax. Operating Junction Temperature2/7THERMAL DATAELECTRICAL CHARACTERISTICS (T CASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (*)DYNAMICRthj-case Rthj-ambT lThermal Resistance Junction-case Thermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax Max0.7562.5300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 030V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 16 V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 1V R DS(on)Static Drain-source On ResistanceV GS = 10 V I D = 40 A V GS = 4.5 VI D = 40 A0.00480.00700.00550.0090ΩΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS = 15 VI D =40 ATBD S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V f = 1 MHz V GS = 03000950190pF pF pF3/7SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 15 VI D = 40 A R G =4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3)30225ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 24 V I D = 80 A V GS = 5 V39142151nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 15 VI D = 40 A R G =4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3)3724ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)80320A A V SD (*)Forward On Voltage I SD = 80 A V GS = 0 1.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 80 Adi/dt = 100A/µs V DD = 10 V T j = 150°C (see test circuit, Figure 5)551153.5ns nC AELECTRICAL CHARACTERISTICS (continued)Fig. 5: Test Circuit For Inductive Load Switching4/75/7DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181A1 2.49 2.690.0980.106A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.959.350.3520.368D180.315E 1010.40.3940.409E18.50.334G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.43.20.0940.126R 0.40.015V20°8°0°8°D 2PAK MECHANICAL DATA6/7DIM.mm inchMIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.100750.082R50 1.574T0.250.35.0.00980.0137W23.724.30.9330.956DIM.mm inchMIN.MAX.MIN.MAX.A33012.992B 1.50.059C12.813.20.5040.520D20.20.795G24.426.40.960 1.039N100 3.937T30.4 1.197BASE QTY BULK QTY10001000REEL MECHANICAL DATA* on sales typeTUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*D2PAK FOOTPRINTTAPE MECHANICAL DATAInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2002 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.7/7。

© 2001 IXYS All rights reservedSymbol Test ConditionsMaximum RatingsV DSST J = 25°C to 150°C300V V DGR T J = 25°C to 150°C; R GS = 1 M Ω300VV GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C (MOSFET chip capability)90A I D104T C = 104°C (External lead capability)75A I DM T C = 25°C, pulse width limited by T JM 360A I AR T C= 25°C90A E AR T C = 25°C 64mJ E AS T C = 25°C3J dv/dt I S ≤ I DM , di/dt ≤ 100 A/µs, V DD ≤ V DSS 5V/ns T J ≤ 150°C, R G = 2 ΩP D T C = 25°C560W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L 1.6 mm (0.063 in.) from case for 10 s 300°CM d Mounting torqueTO-2640.4/6Nm/lb.in.WeightPLUS 247 6 g TO-26410gSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V DSS V GS = 0 V, I D = 3mA 300V V GS(th) V DS = V GS , I D = 8mA 2.04.0 V I GSS V GS = ±20 V, V DS = 0±100 nAI DSS V DS = V DSS T J = 25°C 100 µA V GS = 0 VT J = 125°C2 mA R DS(on)V GS = 10 V, I D = 0.5 I D2533 m ΩNote 1Single MOSFET DieFeatures lInternational standard packages lLow R DS (on) HDMOS TM process lRugged polysilicon gate cell structure lUnclamped Inductive Switching (UIS)rated lLow package inductance -easy to drive and to protect lFast intrinsic rectifierApplications lDC-DC converters lBattery chargers lSwitched-mode and resonant-mode power supplies lDC choppers lAC motor control lTemperature and lighting controlsAdvantageslPLUS 247TM package for clip or spring mounting lSpace savings lHigh power densityHiPerFET TMPower MOSFETs98537A (12/01)PLUS 247TM(TAB)G = Gate D = Drain S = Source TAB = DrainIXFX 90N30V DSS = 300V IXFK 90N30I D25=90A R DS(on)=33 m Ωt rr ≤ 250 nsSGD(TAB)TO-264 AA (IXFK)IXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B14,850,0724,931,8445,034,7965,063,3075,237,4815,381,025SymbolTest ConditionsCharacteristic Values(T= 25°C, unless otherwise specified)Source-Drain Diode Characteristic ValuesNote: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %Millimeter InchesMin.Max.Min.Max.A 4.82 5.13.190.202A1 2.54 2.89.100.114A2 2.00 2.10.079.083b 1.12 1.42.044.056b 1 2.39 2.69.094.106b 2 2.90 3.09.114.122c 0.530.83.021.033D 25.9126.16 1.020 1.030E 19.8119.96.780.786e 5.46 BSC .215 BSC J 0.000.25.000.010K 0.000.25.000.010L 20.3220.83.800.820L 1 2.29 2.59.090.102P 3.17 3.66.125.144Q 6.07 6.27.239.247Q18.388.69.330.342R 3.81 4.32.150.170R1 1.78 2.29.070.090S 6.04 6.30.238.248T1.57 1.83.062.072Dim.© 2001 IXYS All rights reservedIXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B14,850,0724,931,8445,034,7965,063,3075,237,4815,381,025。