BLF4G20-110B,112;BLF4G20S-110B,112;中文规格书,Datasheet资料

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1.Product proﬁle

1.1General description

110W LDMOS power transistor for base station applications at frequencies from1800MHzto2000MHz.

[1]ACPR400 at 30 kHz resolution bandwidth.[2]ACPR600 at 30 kHz resolution bandwidth.

1.2Features

sTypical GSM EDGE performance at a frequency of 1930MHz and 1990MHz, asupply voltage of 28V and an IDq of 650mA:

xLoad power=48W(AV)

xGain=13.8dB (typ)

xEfﬁciency=38.5% (typ)

xACPR400=−61dBc (typ)

xACPR600=−74dBc (typ)

xEVMrms=2.1% (typ)

sEasy power control

sExcellent ruggedness

sHigh efﬁciency

sExcellent thermal stability

sDesigned for broadband operation (1800MHzto2000MHz)BLF4G20-110B;

BLF4G20S-110B

UHF power LDMOS transistorRev. 01 — 23 January 2006Product data sheet

Table 1:Typical performancef = 1930MHzto 1990MHz; Tcase=25°C; in a class-AB production test circuit.

Mode of operationVDS(V)PL(W)Gp(dB)(typ)ηD(%)(typ)ACPR400(dBc)(typ)ACPR600(dBc)(typ)EVMrms(%)(typ)

CW2810013.449---

GSM EDGE2848(AV)13.838.5−61[1]−74[2]2.1

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be takenduring transport and handling.

http://oneic.com/

UHF power LDMOS transistor

sInternally matched for ease of use

1.3Applications

sRF power ampliﬁers for GSM, GSM EDGE and CDMA base stations and multicarrierapplications in the 1800MHzto2000MHz frequency range.

2.Pinning information

[1]Connected to ﬂange

3.Ordering informationTable 2:PinningPinDescriptionSimpliﬁed outlineSymbol

BLF4G20-110B (SOT502A)1drain2gate3source[1]BLF4G20S-110B (SOT502B)

1drain

gate

3source[1]3211

sym039

3211

sym039

Table 3:Ordering informationType numberPackageNameDescriptionVersion

BLF4G20-110B-ﬂanged LDMOST ceramic package; 2 mountingholes; 2 leadsSOT502A

BLF4G20S-110B-earless ﬂanged LDMOST ceramic package; 2 leadsSOT502B

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9397 750 14611© Koninklijke Philips Electronics N.V. 2006. All rights reserved.Product data sheetRev. 01 — 23 January 20063 of 14Philips SemiconductorsBLF4G20-110B; BLF4G20S-110BUHF power LDMOS transistor

4.Limiting values

5.Thermal characteristics

6.CharacteristicsTable 4:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterMinMaxUnit

VDSdrain-source voltage-65V

VGSgate-source voltage−0.5+15V

IDdrain current-12A

Tstgstorage temperature−65+150°C

Tjjunction temperature-200°C

Table 5:Thermal characteristicsSymbolParameterConditionsMinTypMaxUnit

Rth(j-case)thermal resistance fromjunction to caseTcase=80°C

PL=40W-0.760.85K/W

PL=100W-0.650.74K/W

Table 6:CharacteristicsTj=25°C unless otherwise speciﬁed.SymbolParameterConditionsMinTypMaxUnit

V(BR)DSSdrain-source breakdownvoltageVGS=0V; ID=0.9mA65--V

VGS(th)gate-source thresholdvoltageVDS=10 V; ID=180mA2.53.13.5V

VGSqgate-source quiescentvoltageVDS=28 V; ID=900mA2.73.23.7V

IDSSdrain leakage currentVGS=0V; VDS=28V--3µA

IDSXdrain cut-off currentVGS=VGS(th)+6 V; VDS=10V2730-A

IGSSgate leakage currentVGS=15V; VDS=0V--300nA

gfstransfer conductanceVDS=10V; ID=10A-9.0-S

RDS(on)drain-source on-stateresistanceVGS=VGS(th)+6 V; ID=6A-90-mΩ

Crsfeedback capacitanceVGS=0V; VDS=28V; f=1MHz-2.5-pF

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9397 750 14611© Koninklijke Philips Electronics N.V. 2006. All rights reserved.Product data sheetRev. 01 — 23 January 20064 of 14Philips SemiconductorsBLF4G20-110B; BLF4G20S-110BUHF power LDMOS transistor

7.Application information

7.1Ruggedness in class-AB operation

The BLF4G20(S)-110B is capable of withstanding a load mismatch corresponding toVSWR=10:1 through all phases under the following conditions: VDS=28V;IDq=650mA; PL=110W(CW); f=1990MHz.Table 7:Application informationMode of operation: Two-tone (200kHz tone spacing); f = 1930MHzand1990MHz.VDS=28V; IDq=700mA; Tcase=25°C; unless otherwise speciﬁed; in a class-AB production testcircuit.SymbolParameterConditionsMinTypMaxUnit

Gppower gainPL(AV)=100W1213.5-dB

IRLinput return lossPL(AV)=100W-−10−6.5dB

ηDdrain efﬁciencyPL(AV)=100W3638.5-%

IMD3third order intermodulationdistortionPL(AV)=100W-−29−26dBc

IMD5ﬁfth order intermodulationdistortionPL(AV)=100W-−39.5−36.5dBc

IMD7seventhorderintermodulationdistortionPL(AV)=100W-−53.5−50.5dBc

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UHF power LDMOS transistor

VDS=28V; IDq=650mA; Tcase=25°C;f=1990MHzVDS=28V; IDq=650mA; Tcase=25°C;f=1990MHz

Fig 1.One-tone CW power gain and drain efﬁciencyas functions of load power; typical valuesFig 2.Two-tone CW power gain and drain efﬁciencyas functions of average load power; typicalvalues

IR2011SPBF;IR2011PBF;IR2011STRPBF;IR2011;IR2011S;中文规格书,Datasheet资料

Features·

Floating channel designed for bootstrap operation

Fully operational up to +200V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10V to 20V

Independent low and high side channels

Input logicHIN/LIN active high

Undervoltage lockout for both channels

3.3V and 5V input logic compatible

CMOS Schmitt-triggered inputs with pull-down

Matched propagation delay for both channels

Also available LEAD-FREE (PbF)

PackagesHIGH AND LOW SIDE DRIVER

Product Summary

OFFSET200V max.

O+/-1.0A /1.0A typ.

OUT10 - 20V

on/off80 & 60 ns typ.

Delay Matching20 ns max.IR2011(S) & (PbF)

1Typical Connection

(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please

refer to our Application Notes and DesignTips for proper circuit board layout.Data Sheet No.PD60217 revB

SHF-0289Z;中文规格书,Datasheet资料

Features

1 of 6

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBTGaAs MESFET

SiGe BiCMOSSi BiCMOSSiGe HBTGaAs pHEMTSi CMOSSi BJTGaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@.RF MEMSSHF-0289(Z)

0.05GHz to 6GHz, 1.0WATT GaAs HFET

RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)housed in a low-cost surface-mount plastic package. The HFET technology improvesbreakdown voltage while minimizing Schottky leakage current resulting in higherPAE and improved linearity. Output power at 1dB compression for the SHF-0289 is+30dBm when biased for Class AB operation at 7V, 200mA. The +43dBm thirdorder intercept makes it ideal for high dynamic range, high intercept point require-ments. It is well suited for use in both analog and digital wireless communicationinfrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless,and pager systems.

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󰀱󰀱-Phase Line /pg06_󰀱

ConnectorsAC Filter 2-Stage, Very High Symmetrical and Asymmetrical Attenuation

Description-󰀠Chassis:󰀠Screw-on󰀠mounting,󰀠from󰀠top󰀠-󰀠Line-filter󰀠in󰀠standard󰀠version,󰀠2󰀠positions,󰀠high󰀠attenuation󰀠-󰀠Quick󰀠connect󰀠terminals󰀠6.3󰀠x󰀠0.8󰀠mm󰀠or󰀠screw󰀠terminals󰀠-󰀠Especially󰀠effective󰀠against󰀠asymmetrical󰀠interferences󰀠in󰀠the󰀠frequency󰀠range󰀠from󰀠10kHz󰀠up󰀠to󰀠30MHzApprovals-󰀠VDE󰀠Certificate󰀠Number:󰀠40004673-󰀠UL󰀠File󰀠Number:󰀠E72928Characteristics-󰀠Designed󰀠for󰀠increased󰀠requirements-󰀠2-stage󰀠line󰀠filter󰀠with󰀠increased󰀠attenuation󰀠Protection󰀠against󰀠interference󰀠voltage󰀠from󰀠the󰀠mains-󰀠Especially󰀠designed󰀠for󰀠industrial󰀠applications󰀠such󰀠as:󰀠Frequency󰀠Con-verters,󰀠Stepper󰀠Motor󰀠Drives,󰀠UPS-Systems,󰀠Inverters󰀠Especially󰀠suitable󰀠for󰀠use󰀠in󰀠switching󰀠power󰀠supplies-󰀠Qualified󰀠for󰀠use󰀠in󰀠equipment󰀠according󰀠IEC/EN󰀠60950Weblinkspdf,󰀠html,󰀠General󰀠Product󰀠Information,󰀠Approvals,󰀠RoHS,󰀠CHINA-RoHS,󰀠Mating󰀠Connectors,󰀠e-Shop,󰀠SCHURTER-Stock-Check,󰀠Distributor-Stock-Check,󰀠AccessoriesTechnical DataRatings󰀠IEC3󰀠-󰀠36󰀠A󰀠@󰀠Ta󰀠40󰀠°C󰀠/󰀠250󰀠VAC;󰀠50󰀠HzRatings󰀠UL/CSA3󰀠-󰀠36󰀠A󰀠@󰀠Ta󰀠40󰀠°C󰀠/󰀠125󰀠VAC;󰀠60󰀠HzLeakage󰀠Currentstandard󰀠<󰀠0.5󰀠mA󰀠(250󰀠V󰀠/󰀠60󰀠Hz)Dielectric󰀠Strength>󰀠1.7󰀠kVDC󰀠between󰀠L-N󰀠>󰀠2.7󰀠kVDC󰀠between󰀠L/N-PE󰀠Test󰀠voltage󰀠(2󰀠sec)Allowable󰀠Operation󰀠Temp.-25󰀠°C󰀠to󰀠100󰀠°CClimatic󰀠Category25/100/21󰀠acc.󰀠to󰀠IEC󰀠60068-1Protection󰀠ClassSuitable󰀠for󰀠appliances󰀠with󰀠protection󰀠class󰀠1󰀠acc.󰀠to󰀠IEC󰀠61140TerminalQuick󰀠connect󰀠terminals󰀠6.3󰀠x󰀠0.8󰀠mm󰀠or󰀠screw󰀠terminals󰀠Current󰀠>24󰀠A󰀠requires󰀠screw󰀠terminalsMaterial:󰀠HousingAlu.󰀠anodised󰀠/󰀠Stainless󰀠Steel Line󰀠FilterStandard󰀠and󰀠Industrial󰀠Version,󰀠IEC󰀠60939,󰀠IEC󰀠60601-1,󰀠UL󰀠1283,󰀠UL󰀠544,󰀠EN󰀠133󰀠200,󰀠CSA󰀠C22.2󰀠no.󰀠8󰀠Technical󰀠DetailsMTBF>󰀠200'000󰀠h󰀠acc.󰀠to󰀠MIL-HB-217󰀠F

BL3102中文资料

公司地址：上海宜山路810 号电话：86-021-64850700 传真：86-64852222 邮编:200233 1 L3102COMS Clock Generator/Driver For Low Voltage Operation BBDDescription The BL3102 is a low output impedance , CMOS 2-phase clock generator/driver circuit for low voltage operaton BBD. It also includes a VGG Voltage generator. This device can provide can provide acquired clock by self-oscillating an external clock source.The output clock pulse frequency is half of the oscillating (or external)pulse frequency. Features ● It can drive 4096-stage like low voltage operation BBD.directly. ● 2-phase clock output ● Build-in VGG generator for low voltage operation BBD. ● Single power supply(4V-10V) ● 8-pin plastic DIP Application Circuit INLow Pass Filterf140dB/oct3.3µInput BiasCircuit47µ10K100KinBL3207out1out2100K100KVddCP VGG1CP2BL31025.6KRs3.3µAttn>40dB/octLow Pass Filterf1

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BLF4G20-110B,112;BLF4G20S-110B,112;中文规格书,Datasheet资料

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IR2011SPBF;IR2011PBF;IR2011STRPBF;IR2011;IR2011S;中文规格书,Datasheet资料

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5500.2058;5500.2060;5500.2062;5500.2059;5500.2061;中文规格书,Datasheet资料

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