LC-1250A2Q1T中文资料

1 波形产生电路的设计

1 正弦波振荡电路的分析方法

2 RC 正弦波振荡电路

3 LC 正弦波振荡电路

4 石英晶体振荡器

5 非正弦波发生电路

一、正弦波振荡电路的分析方法

1．产生正弦波振荡的条件

如果反馈电压 uf 与原输入信号 ui 完全相等，则即使无外输入信号，放大电路输出端也有一个正弦波信号——自激振荡。

由此知放大电路产生自激振荡的条件是：ifUU

即：iiofUUAFUFU

所以产生正弦波振荡的条件是：1FA

1FA ——幅度平衡条件

π2argFAnFA,2,1,0n ——相位平衡条件

2. 分析步骤：

（1）判断能否产生正弦波振荡

a. 检查电路是否具备正弦波振荡的组成部分；

b. 检查放大电路的静态工作点是否能保证放大电路正常工作；

c. 分析电路是否满足自激振荡的相位平衡条件和振幅平衡条件。

(2) 判断相位平衡条件的方法是：瞬时极性法。

估算振荡频率和起振条件, 振荡频率由相位平衡条件决定。

a.写出回路增益FA的表示式

b.令π2FAn，即可求得满足该条件的0f ，此频率即为振荡频率；

c.令0ff时的1FA，即得起振条件。

3．正弦波产生电路一般应包括以下几个基本组成部分:

(1) 放大电路。 ~iU放大电路AioUAU反馈网络FtUUsin2iiOfUFU 2 (2) 反馈网络。

(3) 选频网络。

(4) 稳幅电路。

判断一个电路是否为正弦波振荡器, 就看其组成是否含有上述四个部分。

二、RC 正弦波振荡电路(文氏电桥)

（一）RC 串并联网络振荡电路

电路组成：

放大电路 —— 集成运放 A ；

选频与正反馈网络 —— R、C 串并联电路；

稳幅环节 —— RF 与 R 组成的负反馈电路。

VRLA BATTERIESFEBRUARY 2002VALVE-REGULATED LEAD ACID BATTERIES: INDIVIDUAL DATA SHEET

This information is generally descriptive only and is not intended to make or imply any representation, guarantee or warranty with respect to any cells and batteries. Cell and battery designs/specifications are subject tomodification without notice. Contact Panasonic for the latest information.For main and standby power supplies.Expected trickle life: 3-5 years at 25°C, Approx. 5 years at 20°C.LC-R127R2P

Specifications

CharacteristicsDimensions (mm)

Discharge characteristics 77°F (25°C) (Note)

Duration of discharge vs. Discharge current (Note)Photo/Label for reference only.

(Note) The above characteristics data are average values obtainedwithin three charge/discharge. Cycles not the minimum values.Terminal type: Faston 187 or Faston 250

3525总结

nan’sir

SG3525

电压调节芯片SG3525具体的内部结构如图1所示。其中，脚16为SG3525的基准电

压源输出，精度可以达到（5.1±1％）V，采用了温度补偿，而且设有过流保护电路。脚5，

脚6，脚7内有一个双门限比较器，内电容充放电电路，加上外接的电阻电容电路共同构成

SG3525的振荡器。振荡器还设有外同步输入端(脚3)。脚1及脚2分别为芯片内误差放大器

的反相输入端、同相输入端。该放大器是一个两级差分放大器，直流开环增益为70dB左右。

根据系统的动态、静态特性要求，在误差放大器的输出脚9和脚1之间一般要添加适当的反

馈补偿网络。

图1 3525内部引脚和框图 1. 下面分别阐述其各部分功能：

a 基准电压源: 基准电压源是一个三端稳压电路，其输入电压VCC可在（8～35）

V内变化，通常采用+15V，其输出电压VST＝5.1V，精度%1±，采用温度补偿，

作为芯片内部电路的电源，也可为芯片外围电路提供标准电源，向外输出电流可

达400mA，没有过流保护电路。

b 振荡电路： 由一个双门限电压均从基准电源取得，其高门限电压VV

H9.3=低

门限电压VV

L9.0=,内部横流源向CT充电，其端压VC线性上升，构成锯齿波的

上升沿，当

HCVV=时比较器动作，充电过程结束，上升时间t1为：

TTCRt67.0

1=

比较器动作时使放电电路接通，CT放电，VC下降并形成锯齿波的下降沿，当

LCVV=时比较器动作，放电过程结束，完成一个工作循环，下降时间间t2为：

TDCRt3.1

2=

注意：此时间即为死区时间

锯齿波的基本周期T为:

()

TDTCRRttT3.167.0

21+=+=

因为

TDRR<<⇒

12tt<<

由上可见锯齿波的上升沿远长于下降沿，因此上升沿作为工作沿，下降沿作为回

扫沿。

C 误差放大器：由两级差分放大器构成，其直流开环放大倍数为80dB左右，

电压反馈信号uf从端子1接至放大器反相输入端，放大器同相输入端接基准电

1P/N:PM0439REV. 1.6 , NOV. 12, 2001MX29F400T/B4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORYerase cycle completion.•Ready/Busy pin (RY/BY)- Provides a hardware method of detecting program orerase cycle completion.- Sector protect/unprotect for 5V only system or 5V/12V system.•Sector protection- Hardware method to disable any combination ofsectors from program or erase operations•100,000 minimum erase/program cycles•Latch-up protected to 100mA from -1V to VCC+1V•Boot Code Sector Architecture- T = Top Boot Sector- B = Bottom Boot Sector•Low VCC write inhibit is equal to or less than 3.2V•Package type:- 44-pin SOP- 48-pin TSOP•Compatibility with JEDEC standard- Pinout and software compatible with single-powersupply Flash•20 years data retentionFEATURES•524,288 x 8/262,144 x 16 switchable•Single power supply operation- 5.0V only operation for read, erase and programoperation•Fast access time: 55/70/90/120ns•Low power consumption- 40mA maximum active current(5MHz)- 1uA typical standby current•Command register architecture- Byte/word Programming (7us/12us typical)- Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x7)•Auto Erase (chip & sector) and Auto Program- Automatically erase any combination of sectors withErase Suspend capability.- Automatically program and verify data at specifiedaddress•Erase suspend/Erase Resume- Suspends an erase operation to read data from, orprogram data to, another sector that is not beingerased, then resumes the erase.•Status Reply- Data polling & Toggle bit for detection of program andGENERAL DESCRIPTIONThe MX29F400T/B is a 4-mega bit Flash memory orga-nized as 512K bytes of 8 bits or 256K words of 16 bits.MXIC's Flash memories offer the most cost-effectiveand reliable read/write non-volatile random accessmemory. The MX29F400T/B is packaged in 44-pin SOP,48-pin TSOP. It is designed to be reprogrammed anderased in system or in standard EPROM programmers.The standard MX29F400T/B offers access time as fastas 55ns, allowing operation of high-speed microproces-sors without wait states. To eliminate bus contention,the MX29F400T/B has separate chip enable (CE) andoutput enable (OE) controls.MXIC's Flash memories augment EPROM functionalitywith in-circuit electrical erasure and programming. TheMX29F400T/B uses a command register to manage thisfunctionality. The command register allows for 100%TTL level control inputs and fixed power supply levelsduring erase and programming, while maintaining maxi-mum EPROM compatibility.MXIC Flash technology reliably stores memory contentseven after 100,000 erase and program cycles. The MXICcell is designed to optimize the erase and programmingmechanisms. In addition, the combination of advancedtunnel oxide processing and low internal electric fieldsfor erase and program operations produces reliable cy-cling. The MX29F400T/B uses a 5.0V±10% VCC sup-ply to perform the High Reliability Erase and auto Pro-gram/Erase algorithms.The highest degree of latch-up protection is achievedwith MXIC's proprietary non-epi process. Latch-up pro-tection is proved for stresses up to 100 milliamps onaddress and data pin from -1V to VCC + 1V.元器件交易网2P/N:PM0439MX29F400T/BREV. 1.6, NOV. 12, 2001PIN CONFIGURATIONS44 SOP(500 mil)PIN DESCRIPTIONSYMBOLPIN NAMEA0~A17Address InputQ0~Q14Data Input/OutputQ15/A-1Q15(Word mode)/LSB addr(Byte mode)CEChip Enable InputWEWrite Enable InputBYTEWord/Byte Selction inputRESETHardware Reset Pin/Sector Protect UnlockOEOutput Enable InputRY/BYReady/Busy OutputVCCPower Supply Pin (+5V)GNDGround Pin48 TSOP (Standard Type) (12mm x 20mm)234567891011121314151617181920212244434241403938373635343332313029282726252423NCRY/BYA17A7A6A5A4A3A2A1A0CEGNDOEQ0Q8Q1Q9Q2Q10Q3Q11RESETWEA8A9A10A11A12A13A14A15A16BYTEGNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCMX29F400T/BA15A14A13A12A11A10A9A8NCNCWERESETNCNCRY/BYNCA17A7A6A5A4A3A2A1123456789101112131415161718192021222324A16BYTEGNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCQ11Q3Q10Q2Q9Q1Q8Q0OEGNDCEA0484746454443424140393837363534333231302928272625MX29F400T/B元器件交易网3P/N:PM0439MX29F400T/BREV. 1.6, NOV. 12, 2001Sector SizeAddress Range (in hexadecimal)(Kbytes/(x8)(x16)SectorA17A16A15A14A13A12Kwords)Address RangeAddress RangeSA0000XXX64/3200000h-0FFFFh00000h-07FFFhSA1001XXX64/3210000h-1FFFFh08000h-0FFFFhSA2010XXX64/3220000h-2FFFFh10000h-17FFFhSA3011XXX64/3230000h-3FFFFh18000h-1FFFFhSA4100XXX64/3240000h-4FFFFh20000h-27FFFhSA5101XXX64/3250000h-5FFFFh28000h-2FFFFhSA6110XXX64/3260000h-6FFFFh30000h-37FFFhSA71110XX32/1670000h-77FFFh38000h-3BFFFhSA81111008/478000h-79FFFh3C000h-3CFFFhSA91111018/47A000h-7BFFFh3D000h-3DFFFhSA1011111X16/87C000h-7FFFFh3E000h-3FFFFhSector SizeAddress Range (in hexadecimal)(Kbytes/(x8)(x16)SectorA17A16A15A14A13A12Kwords)Address RangeAddress RangeSA000000X16/800000h-03FFFh00000h-01FFFhSA10000108/404000h-05FFFh02000h-02FFFhSA20000118/406000h-07FFFh03000h-03FFFhSA30001XX32/1608000h-0FFFFh04000h-07FFFhSA4001XXX64/3210000h-1FFFFh08000h-0FFFFhSA5010XXX64/3220000h-2FFFFh10000h-17FFFhSA6011XXX64/3230000h-3FFFFh18000h-1FFFFhSA7100XXX64/3240000h-4FFFFh20000h-27FFFhSA8101XXX64/3250000h-5FFFFh28000h-2FFFFhSA9110XXX64/3260000h-6FFFFh30000h-37FFFhSA10111XXX64/3270000h-7FFFFh38000h-3FFFFhNote: Address range is A17~A-1 in byte mode and A17~A0 in word mode.SECTOR STRUCTUREMX29F400T TOP BOOT SECTOR ADDRESS TABLEMX29F400B BOTTOM BOOT SECTOR ADDRESS TABLE元器件交易网