4N30_07中文资料

1/11July 2005STP4N150STW4N150N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247Very High Voltage PowerMESH™ MOSFETTable 1: General Featuress TYPICAL R DS (on) = 5 Ωs AVALANCHE RUGGEDNESS s GATE CHARGE MINIMIZEDs VERY LOW INTRINSIC CAPACITANCES sHIGH SPEED SWITCHINGDESCRIPTIONUsing the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has de-signed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.APPLICATIONSs SWITCH MODE POWER SUPPLIESTable 2: Order CodesTYPE V DSS R DS(on)I D Pw STP4N150STW4N1501500 V 1500 V< 7 Ω< 7 Ω4 A 4 A160 W 160 WSALES TYPE MARKING PACKAGE PACKAGINGSTP4N150P4N150TO-220TUBE STW4N150W4N150TO-247TUBERev. 3STP4N150 - STW4N1502/11Table 3: Absolute Maximum ratings( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowedTable 4: Thermal DataTable 5: Avalanche CharacteristicsELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: On /OffSymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)1500V V DGR Drain-gate Voltage (R GS = 20 k Ω)1500V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 4A I D Drain Current (continuous) at T C = 100°C 2.5A I DM ( )Drain Current (pulsed)12A P TOT Total Dissipation at T C = 25°C 160W Derating Factor1W/°C T j T stgOperating Junction Temperature Storage Temperature-55 to 150°CTO-220TO-247Rthj-case Thermal Resistance Junction-case Max 0.78°C/W Rthj-ambThermal Resistance Junction-ambient Max62.550°C/WSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)4A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)350mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 1 mA, V GS = 01500V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating,T C = 125°C 10500µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 30 V± 100nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 345V R DS(on)Static Drain-source On ResistanceV GS = 10 V, I D = 2 A57Ω3/11STP4N150 - STW4N150ELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: DynamicTable 8: Source Drain Diode(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.Symbol ParameterTest Conditions Min.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 30 V , I D = 2 A 3.5S C iss C oss C rss Input Capacitance Output CapacitanceReverse Transfer Capacitance V DS = 25 V, f = 1 MHz, V GS = 0130012012pF pF pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off-Delay Time Fall TimeV DD = 750 V, I D = 2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19)35304545ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 600 V, I D = 4 A,V GS = 10 V (see Figure 22)3010950nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)412A A V SD (1)Forward On Voltage I SD = 4 A, V GS = 02V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A, di/dt = 100 A/µs V DD = 45V(see Figure 20)510312ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 4 A, di/dt = 100 A/µs V DD = 45V, T j = 150°C (see Figure 20)650412.6ns µC ASTP4N150 - STW4N1504/11Figure 3: Safe Operating Area For TO-220Figure 6: Thermal Impedance For TO-220STP4N150 - STW4N150Figure 9: TransconductanceFigure 12: Static Drain-source On Resistance5/11STP4N150 - STW4N1506/11Figure 15: Source-Drain Forward Characteris-ticsFigure 17: Normalized BVdss vs TemperatureSTP4N150 - STW4N150Figure 18: Unclamped Inductive Load Test Cir-cuitFigure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 21: Unclamped Inductive WaveformFigure 22: Gate Charge Test CircuitSTP4N150 - STW4N1508/11STP4N150 - STW4N1509/11STP4N150 - STW4N150Table 9: Revision HistoryDate Revision Description of Changes 11-Mar-20051First release.27-Apr-20052Removed TO-220FP07-Jul-20053Complete version10/11STP4N150 - STW4N150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2005 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America11/11。

4N22U4N23U JAN, JANTX, JANTXV, OPTOCOUPLERS 4N24UMii OPTOELECTRONIC PRODUCTSDIVISIONFeatures:•Base lead provided for conventional transistor biasing•Overall current gain...1.5 typical (4N24U)•High gain, high voltage transistor •Miniature package saves circuit board area •High voltage electrical isolation…1KV rating A pplications:• LineReceivers• SwitchmodePowerSupplies •Signal ground isolation•Process Control input/output isolationDESCRIPTIONVery high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor in a 6-pin leadless chip carrier. The 4N22U, 4N23U and 4N24U optocouplers can be supplied to customer specifications as well as JAN, JANS, JANTX, and JANTXV quality levels.*ABSOLUTE MAXIMUM RATINGSInput to Output Voltage........................................................................................................................................................±1kV Collector-Base Voltage.. (35V)Collector-Emitter Voltage (See Note 1) (35V)Emitter-Base Voltage (4V)Input Diode Reverse Voltage (2V)Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2)....................................40mA Continuous Collector Current..............................................................................................................................................50mA Peak Diode Current (See Note 3).............................................................................................................................................1A Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4)................................300mW Operating Free-Air Temperature Range............................................................................................................-55°C to +125°C 元器件交易网4N22U, 4N23U, and 4N24U JAN, JANTX, JANTXV, OPTOCOUPLERS ELECTRICAL CHARACTERISTICS INPUT LEDT A = 25°C Unless otherwise specifiedPARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Input Diode Static Reverse Current I R100µA V R= 2VInput Diode Static Forward Voltage -55°C+25°C +125°C V F1.00.80.71.51.31.2V I F = 10mAOUTPUT TRANSISTORT A = 25°C Unless otherwise specifiedPARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage V(BR)CBO35V I C = 100µA, I B= 0, I F = 0Collector-Emitter Breakdown Voltage V(BR)CEO35V I C = 1mA, I B= 0, I F = 0Emitter-Base Breakdown Voltage V(BR)EBO4V I C= 0, I E = 100µA, I F = 0COUPLED CHARACTERISTICST A = 25°C Unless otherwise specifiedPARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE On State Collector Current 4N22U4N23U 4N24U I C(ON)0.150.20.4mA V CE = 5V, I B = 0, I F = 2mAOn State Collector Current 4N22U4N23U 4N24U I C(ON)2.56.010.0mAV CE = 5V, I B = 0, I F = 10mAOn State Collector Current 4N22U-55°C 4N23U4N24U I C(ON)1.02.54.0mAV CE = 5V, I B = 0, I F = 10mAOn State Collector Current 4N22U+100°C 4N23U4N24U I C(ON)1.02.54.0mAV CE = 5V, I B = 0, I F = 10mAOff State Collector Current +25°C I C(OFF)100nA V CE = 20V, I B = 0, I F = 0mA Off State Collector Current +100°C I C(OFF)100µA V CE = 20V, I B = 0, I F = 0mACollector-Emitter Saturation Voltage 4N22U4N23U4N24U V CE(SAT)V CE(SAT)V CE(SAT)0.30.30.3VVVI C = 2.5mA, I B = 0, I F = 20mAI C = 5mA, I B = 0, I F = 20mAI C = 10mA, I B = 0, I F = 20mAInput to Output Resistance ALL R I-O1011V IN-OUT= 1kV1Input to Output Capacitance ALL C I-O5pF f = 1MHz, V IN-OUT= 1kV1Rise Time 4N22U4N23U4N24U t rt rt r151520µsµsµsV CC = 10V, I F = 10mA, R L = 100ΩFall Time 4N22U4N23U4N24U t ft ft f151520µsµsµsV CC = 10V, I F = 10mA, R L = 100ΩNOTES:1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.2. This parameter must be measured using pulse techniques t W =100µs.duty cycle ≤ 1%.RECOMMENDED OPERATING CONDITIONS:PARAMETER SYMBOL MIN MAX UNITSInput Current, Low Level I FL01µAInput Current, High Level I FH210mASupply Voltage V CE510VSELECTION GUIDEPART NUMBER PART DESCRIPTIONJAN4N22U4N22U Optocoupler, JAN Screening levelJAN4N23U4N23U Optocoupler, JAN Screening levelJAN4N24U4N24U Optocoupler, JAN Screening levelJANTX4N22U4N22U Optocoupler, JANTX Screening levelJANTX4N23U4N23U Optocoupler, JANTX Screening levelJANTX4N24U4N24U Optocoupler, JANTX Screening levelJANTXV4N22U4N22U Optocoupler, JANTXV Screening levelJANTXV4N234N23U Optocoupler, JANTXV Screening levelJANTXV4N24U4N24U Optocoupler, JANTXV Screening level元器件交易网。

74ACT04中文资料74ACT04HEX INVERTERApril 1997s HIGH SPEED:t PD =4.5ns (TYP.)at V CC =3.3V sLOW POWER DISSIPATION:I CC =4μA (MAX.)at T A =25o CsCOMPATIBLE WITH TTL OUTPUTS V IH =2V (MIN),V IL =0.8V (MAX)s50?TRANSMISSION LINE DRIVING CAPABILITYsSYMMETRICAL OUTPUT IMPEDANCE:|I OH |=I OL =24mA (MIN)sBALANCED PROPAGATION DELAYS:t PLH ?t PHLsOPERATING VOLTAGE RANGE:V CC (OPR)=4.5V to 5.5VsPIN AND FUNCTION COMPATIBLE WITH 74SERIES 04sIMPROVED LATCH-UP IMMUNITYDESCRIPTIONThe ACT04is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology.It is ideal for low power applications mantaining high speed operation similar toequivalent Bipolar Schottky TTL.The internal circuit is composed of 3stages including buffer output,which enables high noise immunity and stabe output.The device is designed to interface directly High Speed CMOS systems with TTL,NMOS and CMOS output voltage levels.All inputs and outputs are equipped with protection circuits against static discharge,giving them 2KV ESD immunity and transient excess voltage.PIN CONNECTION AND IEC LOGIC SYMBOLSORDER CODES :74ACT04B 74ACT04M M(Micro Package)B (Plastic Package)1/7INPUT AND OUTPUT EQUIVALENT CIRCUITABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V CC Supply Voltage -0.5to +7V V I DC Input Voltage -0.5to V CC +0.5V V O DC Output Voltage -0.5to V CC +0.5V I IK DC Input Diode Curr ent ±20mA I OK DC Output Diode Current ±20mA I O DC Output Current ±50mA I CC or I GND DC V CC or Ground Current±300mAT stg Storage Temperature -65to +150o C T LLead Temperature (10sec)300oCAbsolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these condition is not implied.TRUTH TABLEA Y L H HLPIN DESCRIPTIONPIN No SYMBOL NAME AND FUNCTION 1,3,5,9,11,131A to 6A Data Inputs 2,4,6,8,10,121Y to 6Y Data Oututs 7GND Ground (0V)14V CCPositive Supply VoltageRECOMMENDED OPERATING CONDITIONSSymbol ParameterValue Unit V CC Supply Voltage 4.5to 5.5V V I Input Voltage 0to V CC V V O Output Voltage0to V CC VT op Operating Temperature:-40to +85oCdt/dvInput Rise and Fall Time V CC =4.5to 5.5V (note 1)8ns/V1)V IN from 0.8V to 2.0V74ACT042/7CAPACITIVE CHARACTERISTICSSymbolParameterTest ConditionsValueV CC (V)T A =25oC -40to 85oC Min.Typ.Max.Min.Max.C IN Input Capacitance 5.04pF C PDPower Dissipation Capacitance (note 1)5.037pF1)C PD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.(Refer to Test Circuit).Ave rage operating current can be obtained by the following equation.I CC (opr)=C PD ?V CC ?f IN +I CC /n (per circuit)AC ELECTRICAL CHARACTERISTICS (C L =50pF,R L =500?,Input t r =t f =3ns)SymbolParameterTest ConditionValueUnitV CC (V)T A =25oC -40to 85o CMin.Typ.Max.Min.Max.t PLH t PHLPropagation Delay Time(*)1.5 4.57.5 1.08.5ns(*)Voltage range is 5V ±0.5VDC SPECIFICATIONSSymbolParameterTest ConditionsValueUnitV CC (V)T A =25oC -40to 85oC Min.Typ.Max.Min.Max.V IH High Level Input Voltage 4.5V O =0.1V or V CC -0.1V 2.0 1.5 2.0V 5.5 2.01.52.0V IL Low Level Input Voltage 4.5V O =0.1V or V CC -0.1V 1.50.80.8V 5.5 1.50.80.8V OHHigh Level Output Voltage4.5V I (*)=V IH or V ILI O =-50μA 4.4 4.49 4.4V5.5I O =-50μA 5.4 5.495.44.5I O =-24mA 3.86 3.765.5I O =-24mA 4.864.76V OLLow Level Output Voltage4.5V I (*)=V IH or V ILI O =50μA 0.0010.10.1V5.5I O =50mA 0.0010.10.14.5I O =24mA 0.360.445.5I O =24mA0.360.44I I Input Leakage Current 5.5V I =V CC or GND ±0.1±1μA I CCT Max I CC /Input 5.5V I =V CC -2.1V 0.61.5mA I CC Quiescent Supply Current5.5V I =V CC or GND 440mA I OLD Dynamic Output Current (note 1,2)5.5V OLD =1.65V max 75mA I OHDV OHD =3.85V min-75mA1)Maximum test duration 2ms,one output loaded at time2)Incident wave switch ing is guaranteed on transmission lines with impe dances as low as 50?.(*)All outputs loaded.74ACT043/774ACT04TEST CIRCUITC L=50pF or equivalent(includes jig and probe capacitance)R L=R1=500?or equiva lentR T=Z OUT of pulse generator(typically50?)WAVEFORM:PROPAGATION DELAYS(f=1MHz) 4/7DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.a10.510.020B 1.391.650.0550.065b 0.50.020b10.250.010D 200.787E 8.50.335e 2.540.100e315.240.600F 7.10.280I 5.10.201L 3.30.130Z1.272.540.0500.100P001APlastic DIP14MECHANICAL DATA 74ACT045/7DIM.mm inch MIN.TYP.MAX.MIN.TYP.MAX.A 1.750.068a10.10.20.0030.007a2 1.650.064b 0.350.460.0130.018b10.190.250.0070.010C 0.50.019c145(typ.)D 8.558.750.3360.344E 5.86.20.2280.244e 1.270.050e37.620.300F 3.8 4.00.1490.157G 4.6 5.30.1810.208L 0.5 1.270.0190.050M 0.680.026S8(max.)P013GSO14MECHANICAL DATA74ACT046/774ACT04 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumesno responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectr onics.Specifications mention ed in this publication are subject to change without notice.This publication supersede s and replaces all information previously supplied.SGS-THOMSON Microelectr onics products are not auth orized for use as critical compon ents in life support devices or systems without expre ss written approval of SGS-THOMSON Microelectonics.1997SGS-THOMSON Microelectronics-Printed in Italy-All Rights Reserve dSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia-Brazil-Canada-China-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A.7/7。