APM2095PDC-TUL中文资料
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P-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005APM2095PD
www.anpec.com.tw1ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.Pin Description
Ordering and Marking InformationFeatures
Applications
• Switching Regulators
• Switching Converters• -20V/-3A,
RDS(ON)=75mΩ(typ.) @ VGS=-4.5V
RDS(ON)=100mΩ(typ.) @ VGS=-2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)APM2095P
Handlin
g Code
Temp. Range
Pac
kage CodePackage Code D : SOT-89
Operating Junction Temp. Range C : -55 to 150°C
Handling Code TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2095P D:APM2095XXXXXXXXXX - Date CodeLead Free CodeP-Channel MOSFET Top View of SOT-89GDS
GS
D(2)(3)
(1)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.元器件交易网www.cecb2b.comCopyright ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005APM2095PD
www.anpec.com.tw
2Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)Symbol Parameter Rating Unit
VDSS Drain-Source Voltage -20
VGSS Gate-Source Voltage ±10 V
ID* Continuous Drain Current -3
IDM* 300µs Pulsed Drain Current VGS=-4.5V -12 A
IS* Diode Continuous Forward Current -1 A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 1.47 PD* Power Dissipation for Single Operation TA=100°C 0.58 W
RθJA* Thermal Resistance-Junction to Ambient 85 °C/W
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec. APM2095PD Symbol Parameter Test Condition Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -20 V
VDS=-12V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -0.5 -0.7 -1 V
IGSS Gate Leakage Current VGS=±10V, VDS=0V ±100 nA
VGS=-4.5V, IDS=-3A 75 100 RDS(ON) a Drain-Source On-state Resistance VGS=-2.5V, IDS=-1.5A 100 130 mΩ
VSDa Diode Forward Voltage ISD=-0.5A , VGS=0V -0.7 -1.3 V
Gate Charge Characteristics b
Qg Total Gate Charge 11.5 15
Qgs Gate-Source Charge 1.7
Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V,
IDS=-3A
1.8 nC
元器件交易网www.cecb2b.comCopyright ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005APM2095PD
www.anpec.com.tw
3Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)APM2095PD Symbol Parameter Test Condition Min. Typ. Max. Unit
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 12.5 Ω
Ciss Input Capacitance 1160
Coss Output Capacitance 250
Crss Reverse Transfer Capacitance VGS=0V,
VDS=-15V,
Frequency=1.0MHz 85 pF
td(ON) Turn-on Delay Time 12 21
Tr Turn-on Rise Time 25 42
td(OFF) Turn-off Delay Time 52 85
Tf Turn-off Fall Time VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
18 32 ns
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing. 元器件交易网www.cecb2b.comCopyright ANPEC Electronics Corp.
Rev. B.1 - Apr., 2005APM2095PD
www.anpec.com.tw
41E-41E-30.010.11101001E-30.010.112
Mounted on 1in2 padRθJA : 85oC/W0.010.020.050.10.2
Single Pulse
Duty = 0.5
Typical Characteristics
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)Drain Current
Tj - Junction Temperature-ID - Drain Current (A)
Thermal Transient Impedance
Normalized Transient Thermal Resistence
Square Wave Pulse Duration (sec)Safe Operation Area
-VDS - Drain - Source Voltage (V)-ID - Drain Current (A)
0204060801001201401600.00.20.40.60.81.01.21.41.6
TA=25oC
0204060
801001201401601800.00.51.01.52.02.53.03.5
TA=25oC,VG=-4.5V
0.010.11101000.010.111050
100msRds(on) Limit
300µs
TA=25oC1s1ms
10ms
DC
元器件交易网www.cecb2b.com
