Matching processing in the design of integrated c

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2O18 NO.2 Drain are equivalently equal in the direction and ensure the matching ofthe total number ofthe Source and the Drain. Fourth,in order to improve the performances ofthe devices,it is necessary to determine the ways of their alignment.Generally speaking,the line mode of the matching devices is symmetrical, and the distributed RC network needs to be strengthened to deal with it ifthe structures ofthe walk line are different.Because when the line is asymmetrical,the mismatch will occur.When the parasitic parameters are extracted from the sequential circuits,the RCC mode is needed.In order to reduce the parameter deviation of the internal devices and control the Idanalog variation,it is necessary to merge it with the Diffusion,or to match with a symmetrically symmetric mode.In order to reduce the Idanalog of the MOS internal circuit and to pay aRenfion to the error control between the simulation results and the production results,shapes with the same size of the DummyMOS and the Dummy needs to be fired within the range of 5um around the MOS active region, and the size of the Decouple capacitance cannot be larger,and the DifusionGuardRing cannot be used to encircling the MOS.If it is required to encircle.the width of the Diffusion should be witbin 0. 5um,and the MOS must encircle the Dummy according to the previous requirement嘲. 3.Resistance matching The resistance plays an important role in the integrated circuits,such as current limiting,pulling up,pulling down and partial voltage.Therefore,in the design of the integrated circuits,it is necessary to effectively combine the requirements of the resistance manufacturing precision and strengthen the matching process to ensure the accuracy of the resistance.Generally speaking,the requirements of the current limiting,pulling up and pulling down in the integrated circuits are low in the resistance value,and the requirement of the partial voltage resistance is the same error rate of each resistor.so it is also matched in the aspect ofthe voltage resistance Layout.and there can be no metal straddle crossing over the matching unit.Especially in the METAL1,if it must be crossed over,it is necessary to take the same line of the metal and the signal,and the effect on all the matching resistances across is the same.The Dummy resistors are installed on both sides of the matching resistor.Sometimes,the Dummy resistors are installed at both ends to meet the higher matching requirements. When installing the Dummy resistors on both sides,the length and the width of the protected resistance must be long,and the installation of the two Dummy resistors requires a poor structure and a minimum length.Because the cross drawing method is adopted,the mismatch rate can be reduced effectively,and the resistance is sensitive to the temperature.It is strictly prohibited to arrange the matching MOS to adapt to the similar temperature environment.In order to reduce the impact ofthe connection to the resistance value matching,it is necessary to play a bit more of its CONTACT and to ensure that each branch is symmetrical when the Layout connection is connected. 4.Capacitance matching in the layout The capacitance is the most connTlon device in the design of the integrated circuits.The capacitor can only carry the alternating current,and the DC current will be blocked.Therefore,in the 一84 circuit,we need to match the capacitance in the layout according to the actual situation.Generally speaking,the filter network outputs the smooth DC,while the resonant circuit is used for the specific  ̄equency adjustment,and the power transmission system is used for the voltage regulation.In the circuit,the matching capacitor should be processed according to the MOS matching method. When the capacitance is matched,the total capacitance of the circuit must be larger,so that the error caused by the manufacturing process can be effectively reduced.But in the layout,it is necessary to split the large-size matching capacitance into the smaller symmetric units and take a common center.Unlike the MOS and the resistance,it is necessary to install the Dummy around the capacitive function area.If the size of the Dummy is compressed,the size of the capacitance can be reduced and the MOM capacitance is used for the large capacity.When the scale matches the array,it is necessary to ensure that the capacitance is evenly placed in the region,and the matching resistors are divided into the multiple groups,and each small matching unit is then pieced together to process 5.Conclusion To sum up,the design of the integrated circuit is a very professional and complex process,which requires us in the design to strengthen the cooperation of all parties,and especially the two parties of the schematic and the layout design need to be highly coordinated to complete,to ensure that the final product is expected to be promoted.Especially in the rapid promotion of the semiconductor integration,the size of its arts and crafts is falling rapidly,so it is bound to face more problems of the process bias. This requires us to strengthen the processing at the source of the design,and grasp the main points of its design to ensure the efficient implementation of the various matching work. References [1]Sun Lili,Fang Qiwen.Matching processing in the integrated circuit design [J],Science and Technology,201 6,26,(26): l40.141. 【2】Li Songting.Research and design implementation of the key technologies for the CMOS RF receiver IC [D],National University ofDefense Technology,2015. [3]Chen Longwei,Sun Xufei.Design of a resistance matching system in the CAN bus terminal 【J】,Electrical&Energy Management Technology,2015(04):37—41.