2SA1366资料

2SA966

2006-11-09 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA966

Audio Power Amplifier Applications

• Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Unit

Collector-base voltage VCBO −30 V

Collector-emitter voltage VCEO −30 V

Emitter-base voltage VEBO −5 V

Collector current IC −1.5 A

Emitter current IE 1.5 A

Collector power dissipation PC 900 mW

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SA系列（PNP型）三极管参数表

2SA系列(PNP型)三极管参数表

型号⼚商特性⽤途集电极

最⼤直

流耗散

功率Pcm(W)

集电极

最⼤允

许直流

电流Icm(A)

集电极-

基极击穿

电压BVcbo(V)

集电极-

发射极击

穿电压BVceo(V)

特征频

率ft(Hz)

放⼤倍数

国内外代换

型号2SA0683PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC13831 -1.5 -30 -25 200M 50-340 CK77A

2SA0684PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC13841 -1.5 -60 -50 200M 50-340 CK77A

2SA0794PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC15671.2 -500m -100 -100 120M 50-220 CA77A2SA0794A PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC1567A1.2 -500m -120 -120 120M 50-220 CA77A

2SA0885PANASONIC 硅PNP三极管,低频功率放⼤，配对管

2SC1846

5 -1 -45 -35 200M 50-340 3CK10B

2SA0886PANASONIC 硅PNP三极管,低频功率放⼤，配对管

2SC1847

1.2 -1.5 -50 -40 150M 80-220 3CK10B

2SA100锗PNP三极管,⾼频射频放⼤60m -10m -40 10M 80-300 3AG95A 2SA1001硅PNP三极管80 130 3CD10E 2SA1002硅PNP三极管120 120 3CD15D 2SA1003硅PNP三极管120 150 3CD15E 2SA1004硅PNP三极管310m -100m -40 3CG121C

2SA1006NEC 硅PNP三极管,功率放⼤，配对管

2SC2336

型号 厂商 特性用途 集电极最大直流耗散功率Pcm(W) 集电极最大允许直流电流Icm(A) 集电极-基极击穿电压BVcbo(V) 集电极-发射极击穿电压BVceo(V) 特征频率ft(Hz) 放大倍数 国内外代换型号

2SA0683 PANASONIC 硅PNP三极管,低频功率放大和驱动，配对管2SC1383 1 -1.5 -30 -25 200M 50-340 CK77A

2SA0684 PANASONIC 硅PNP三极管,低频功率放大和驱动，配对管2SC1384 1 -1.5 -60 -50 200M 50-340 CK77A

2SA0794 PANASONIC 硅PNP三极管,低频功率放大和驱动，配对管2SC1567 1.2 -500m -100 -100 120M 50-220 CA77A

2SA0794A PANASONIC 硅PNP三极管,低频功率放大和驱动，配对管2SC1567A 1.2 -500m -120 -120 120M 50-220 CA77A

2SA0885 PANASONIC 硅PNP三极管,低频功率放大，配对管2SC1846 5 -1 -45 -35 200M 50-340 3CK10B

2SA0886 PANASONIC 硅PNP三极管,低频功率放大，配对管2SC1847 1.2 -1.5 -50 -40 150M 80-220 3CK10B

2SA100 锗PNP三极管,高频射频放大 60m -10m -40 10M 80-300 3AG95A

2SA1001 硅PNP三极管 80 130 3CD10E

2SA1002 硅PNP三极管 120 120 3CD15D

2SA1003 硅PNP三极管 120 150 3CD15E

1998©Document No. D16194EJ1V0DS00Date Published April 2002 N CP(K)Printed in JapanSILICON TRANSISTORS2SA1376, 1376A

PNP SILICON EPITAXIAL TRANSISTORFOR HIGH VOLTAGE AMPLIFIERSDATA SHEET

2002The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.FEATURES•High voltageVCEO: −180 V / −200 V(2SA1376/2SA1376A)•Excellent hFE linearity•High total power dissipation in small dimension:PT: 0.75 W•Complementary transistor with 2SC3478 and 2SC3478AABSOLUTE MAXIMUM RATINGS (Ta = 25°C)2SA1376/2SA1376AParameterSymbolRatingsUnitCollector to base voltageVCBO−200VCollector to emitter voltageVCEO−180/−200VEmitter to base voltageVEBO−5VCollector current (DC)IC(DC)−100mACollector current (pulse)IC(pulse)*−200mATotal power dissipationPT0.75WJunction temperatureTj150°CStorage temperatureTstg−55 to +150°C*PW ≤ 10 ms, duty cycle ≤ 50%PACKAGE DRAWING (UNIT: mm)