2SA1272资料
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2SA1822
2006-11-09 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SA1822
High-Voltage Switching Applications
High-Speed DC-DC Converter Application
• Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A • High collector breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating
Unit
Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V Collector current IC −1 A Base current IB −0.5 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC 25 W
Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SA1313
2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1313
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent hFE linearity : hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −500 mA
Base current IB −50 mA
Collector power dissipation PC 200 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking
2SA1037AK / 2SA1576A / 2SA1774 /Transistors 2SA2029 / 2SA933ASGeneral Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /2SA933AS
!Features1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC5658 /2SC1740S.
!StructureEpitaxial planar type.PNP silicon transistor!External dimensions (Units : mm)2SA1037AK
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗Abbreviated symbol : F ∗
∗ Denotes hFEAbbreviated symbol : F ∗ROHM : SMT3EIAJ : SC-59(3) Collector(1) Emitter(2) BaseEach lead has same dimensions0.80.150to0.10.3to0.61.1(2)(1)
2.81.60.4(3)2.91.90.950.95
2SA1774
ROHM : EMT3EIAJ : SC-75A(3) Collecto(1) Emitter(2) Base0.70.150.1Min.0.550to0.10.21.61.61.00.30.8(2)0.50.5(3)0.2(1)2SA1576A
ROHM : UMT3EIAJ : SC-70(3) Collector(1) Emitter(2) BaseEach lead has same dimensions1.252.10.3
Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability,such as life-support systems,aircraft’scontrol systems,or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed,even momentarily, rated values (such as maximum ratings,operating condition ranges,or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.PNP/NPN Epitaxial Planar Silicon Transistors