Infineon-FF300R12KE4-DS-v02_01-en_cn
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最大额定值/MaximumRatedValues
Tvj = 25°C TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C tP = 1 ms TC = 25°C, Tvj max = 175°C
VCES
IC nom IC ICRM Ptot VGES
Eon
Eoff ISC RthJC RthCH Tvj op
-40
0,093 K/W K/W °C
技术信息/TechnicalInformation
IGBT-模块 IGBT-modules
FF300R12KE4
初步数据 PreliminaryData
二极管,逆变器/Diode,Inverter
6,4 5,0 400
tr
td off
tf
IC = 300 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,8 Ω Tvj = 150°C IC = 300 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,8 Ω Tvj = 150°C VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt 每个IGBT/perIGBT 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) dateofpublication:2013-11-04 revision:2.1 1 tP ≤ 10 µs, Tvj = 150°C
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IF = 300 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IF = 300 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C 每个二极管/perdiode 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K)
A W V
特征值/CharacteristicValues
集电极-发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极-发射极截止电流 Collector-emittercut-offcurrent 栅极-发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload 上升时间(电感负载) Risetime,inductiveload 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload 下降时间(电感负载) Falltime,inductiveload 开通损耗能量(每脉冲) Turn-onenergylossperpulse 关断损耗能量(每脉冲) Turn-offenergylossperpulse 短路数据 SCdata 结-外壳热阻 Thermalresistance,junctiontocase 外壳-散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions preparedby:MK approvedby:WR
技术信息/TechnicalInformation
IGBT-模块 IGBT-modules
FF300R12KE4
初步数据 PreliminaryData
1200 300 460 600 1600 +/-20 min. IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 11,5 mA, VCE = VGE, Tvj = 25°C VGE = -15 V ... +15 V Tvj = 25°C f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V VCE = 1200 V, VGE = 0 V, Tvj = 25°C VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES td on 5,2 typ. 1,75 2,00 2,05 5,8 2,50 2,5 19,0 0,70 0,20 0,25 0,27 0,045 0,05 0,055 0,50 0,60 0,62 0,10 0,16 0,18 16,5 25,0 30,0 23,5 35,0 39,0 1200 0,032 150 max. 2,15 V V V V µC Ω nF nF mA nA µs µs µs µs µs µs µs µs µs µs µs µs mJ mJ mJ mJ mJ mJ A V A A
Tvj = 25°C tP = 1 ms VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM IF IFRM I²t min. IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 1200 300 600 19000 18000 typ. 1,65 1,65 1,65 360 400 410 30,0 56,0 66,0 14,0 26,0 28,0 0,052 150 max. 2,15 V V V A A A µC µC µC mJ mJ mJ V A A A²s A²s
IGBT-模块 IGBT-modules
FF300R12KE4
初步数据 PreliminaryData
RMS, f = 50 Hz, t = 1 min. 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) TC=25°C,每个开关/perswitch 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote VISOL CTI min. 4,0 Cu Al2O3 29,0 23,0 23,0 11,0 > 400 typ. 0,01 20 0,70 340 125 6,00 5,0 max. K/W nH mΩ °C Nm Nm g kV
62mmC-SerienModulmitTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode 62mmC-seriesmodulewithtrench/fieldstopIGBT4andoptimizedEmitterControlledDiode
特征值/CharacteristicValues
正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗(每脉冲) Reverserecoveryenergy 结-外壳热阻 Thermalresistance,junctiontocase 外壳-散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions