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SC43-11YWA, 规格书,Datasheet 资料

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Description
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
Package Dimensions& Internal Circuit Diagram
Part No. Dice Lens Type Iv (ucd) [1] @ 10mA Min. SC43-11YWA Yellow (GaAsP/GaP) White Diffused 3600 Typ. 6500 Common Cathode, Rt. Hand Decimal. Description
REV NO: V.11 CHECKED: Joe Lee
DATE: APR/02/2011 DRAWN: J.Yu
PAGE: 4 OF 6 ERP: 1301001009
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SPEC NO: DSAD2272 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
Notes: 1. All dimensions are in millimeters (inches), Tolerance is ±0.25(0.01")unless otherwise noted. 2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
10.92mm (0.43INCH) SINGLE DIGIT NUMERIC DISPLAY
Part Number: SC43-11YWA Yellow
Features
0.43 inch digit height. Low current operation. Excellent character appearance. Easy mounting on P.C. boards or sockets. Mechanically rugged. Standard : gray face, white segment. RoHS compliant.
REV NO: V.11 CHECKED: Joe Lee
DATE: APR/02/2011 DRAWN: J.Yu
PAGE: 2 OF 6 ERP: 1301001009
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Yellow
SC43-11YWA
SPEC NO: DSAD2272 APPROVED: WYNEC
PAGE: 6 OF 6 ERP: 1301001009
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DATE: APR/02/2011 DRAWN: J.Yu
PAGE: 5 OF 6 ERP: 1301001009
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SPEC NO: DSAD2272 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: APR/02/2011 DRAWN: J.Yu
Note: 1. Luminous intensity/ luminous Flux: +/-15%.
Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device Yellow Yellow Yellow Yellow Yellow Yellow Typ. 590 588 35 20 2.1 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR=5V
Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base.
Yellow 75 30 140 5 -40°C To +85°C 260°C For 3-5 Seconds
Units mW mA mA V
SPEC NO: DSAD2272 APPROVED: YNEC
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at TA=25°C
Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating / Storage Temperature Lead Solder Temperature[2]
REV NO: V.11 CHECKED: Joe Lee
DATE: APR/02/2011 DRAWN: J.Yu
PAGE: 3 OF 6 ERP: 1301001009
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PACKING & LABEL SPECIFICATIONS
SC43-11YWA
SPEC NO: DSAD2272 APPROVED: WYNEC
SPEC NO: DSAD2272 APPROVED: WYNEC
REV NO: V.11 CHECKED: Joe Lee
DATE: APR/02/2011 DRAWN: J.Yu
PAGE: 1 OF 6 ERP: 1301001009
芯天下--/
Selection Guide

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XO3001;XO3001-1;中文规格书,Datasheet资料

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CAUTION: Electrostatic Sensitive Device. Observe precautions for handling. Notes:
1. Frequency accuracy includes 25 °C tolerance, temperature drift over -40 to +85 °C operation, supply voltage and load variations, and aging. 2. The design, manufacturing process, and specifications of this device are subject to change without notice.
7.0 x 5.0 mm Nominal Footprint
E-mail: info@ ©2009-2010 by RF Monolithics, Inc.
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Reel Dimensions in mm (7” nominal diameter)
Tape Dimensions in mm
E-mail: info@ ©2009-2010 by RF Monolithics, Inc.
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E-mail: info@ ©2009-2010 by RF Monolithics, Inc.
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Typical Phase Noise Result
4-Terminal Surface Mount Seam-Weld Case
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140 120
100 80 60 40 20
0 0
dc
a = 180° a = CONDUCTION ANGLE
0.2
0.4
0.6
0.8
1.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 2. Maximum Ambient Temperature
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
PG(AV)
0.1
W
Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TA = 25°C)
IFGM
0.2
A
Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C)
VRGM
5.0
V
Operating Junction Temperature Range @ Rated VRRM and VDRM
50 to 60 Hz, Gate Open)
NYC222
50
NYC226
400
NYC228
600
On-State Current RMS (180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
A
Peak Non-repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Features
• Blocking Voltage to 600 V • High Surge Current − 15 A • Very Low Forward “On” Voltage at High Current • Low-Cost Surface Mount SOT−223 Package • These are Pb−Free Devices
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2.74 2.8 2.86
2.94 3.0 3.06
3.23 3.3 3.37
3.92 4.0 4.08
4.41 4.5 4.59
4.90 5.0 5.1
Vin = Vout + 1.0 V, −40°C < TA < 85°C, 1.0 mA < Iout < 150 mA 2.5 Suffix 2.8 Suffix 3.0 Suffix 3.3 Suffix 4.0 Suffix 4.5 Suffix 5.0 Suffix
Characteristics
Symbol Min Typ Max Unit
CONTROL ELECTRICAL CHARACTERISTICS
Input Voltage Range
ON/OFF Input Current (All versions) VON/OFF = 2.4 V
ON/OFF Input Voltages (All versions) Logic “0”, i.e. OFF State Logic “1”, i.e. ON State
Value
Unit
Power Supply Voltage
Power Dissipation and Thermal Resistance Maximum Power Dissipation Case 488AE (DFN6, 3x3) MN Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Case 846A (Micro8) DM Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case
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100
TJ = 100°C
25°C
- 25°C
VCE = 5 V100.11.010
100
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
/
3
IC, COLLECTOR CURRENT (A)

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
1 2 3
TO−247 CASE 340L
MARKING DIAGRAM
MJW2119x AYWWG
1 BASE
3 EMITTER
Figure 7. Typical Output Characteristics
IC, COLLECTOR CURRENT (A)
NPN MJW21196 30
2.0 A
25
1.5 A
1.0 A
20 IB = 0.5 A
15
10
5.0 TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
3.0
2.5 TJ = 25°C IC/IB = 10
2.0
PNP MJW21195
1.5
1.0
VBE(sat)
0.5
VCE(sat)
0
0.1
1.0
10
100