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2SK3541_1中文资料

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2SK3541 Transistor Rev.B 1/3 2.5V Drive Nch MOS FET

2SK3541

zStructure

Silicon N-channel

MOSFET

zApplications

Interfacing, switching (30V, 100mA)

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy. zExternal dimensions (Unit : mm)

(1)Gate(2)Source(3)DrainVMT3

(3)0.32

0.81.2

0.130.50.220.40.41.20.8

0.20.2

(2)(1)

Abbreviated symbol : KN

zPackaging specifications

T2L

8000

2SK3541TypePackage

Code

Basic ordering unit(pieces)Taping

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperatureVDSS

VGSS

PD∗2

Tch30V

V

mA

mW

°C±20

±100

ID

IDP∗1Continuous

PulsedmA±400

150

150

Tstg°C−55 to +150SymbolLimitsUnit

∗1 Pw≤10µs, Duty cycle≤1%∗2 With each pin mounted on the recommended lands. zEquivalent circuit

Drain

SourceGate

∗ Gate Protection Diode

∗A protection diode is included between the gateand the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltagesare exceeded.

元器件交易网www.cecb2b.com2SK3541 Transistor Rev.B 2/3 zElectrical characteristics (Ta=25°C) ParameterSymbol

IGSSV(BR)DSSIDSSVGS(th)RDS(on)RDS(on)

Ciss|Yfs|

CossCrssMin.

−

30

−

0.8

−

−20

−

−−

−

−

−

5

13−

9

4±1

−

1.0

1.5

8

−713

−−

−

−µAVGS=±20V, VDS=0V

ID=10µA, VGS=0V

VDS=30V, VGS=0V

VDS=3V, ID=100µA

ID=10mA, VGS=4V

ID=1mA, VGS=2.5V

VDS=5VID=10mA, VDS=3V

VGS=0V

f=1MHzV

µA

V

Ω

Ω

pFmS

pF

pF

td(on)−15−ID=10mA, VDD 5Vns

tr−35−VGS=5Vns

td(off)−80−RL=500Ωns

tf−80−RG=10ΩnsTyp.Max.UnitConditions

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall timeStatic drain-source on-stateresistance

zElectrical characteristic curves

01234500.050.10.15

DRA

IN CURRENT : ID (A)

DRAIN-SOURCE VOLTAGE : VDS (V)3V

3.5V

2.5V

VGS=1.5V4V

2V

Fig.1 Typical output characteristicsTa=25°CPulsed

040.1m100m

DRAIN CURRENT : ID (A)

GATE-SOURCE VOLTAGE : VGS (V)110m

321m

0.2m0.5m2m5m50m

20m200m

Ta=125°C75°C25°C−25°CVDS=3VPulsed

Fig.2 Typical transfer characteristics

−500011.52

GATE THRESHOLD VOLTAGE : VGS(th) (V)

CHANNEL TEMPERATURE : Tch (°C)0.5

−25255075100125150VDS=3VID=0.1mAPulsed

Fig.3 Gate threshold voltage vs. channel temperature

0.0011250

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : RDS(on) (Ω)

DRAIN CURRENT : ID (A)0.50.0020.0050.010.020.050.10.20.551020Ta=125°C75°C25°C−25°CVGS=4VPulsed

Fig.4 Static drain-source on-state resistance vs. drain current (Ι)0.0011250

0.50.0020.0050.010.020.050.10.20.551020

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : RDS(on) (Ω)VGS=2.5VPulsed

DRAIN CURRENT : ID (A)Ta=125°C75°C25°C−25°C

Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ)05101520051015

GATE-SOURCE VOLTAGE : VGS (V)ID=0.1A

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : RDS(on) (Ω)Ta=25°CPulsed

ID=0.05A

Fig.6 Static drain-source on-state resistance vs. gate-source voltage

元器件交易网www.cecb2b.com2SK3541 Transistor Rev.B 3/3

−500251500369

CHANNEL TEMPERATURE : Tch (°C)−2550751001252

14578VGS=4VPulsed

ID=100mA

ID=50mA

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : RDS(on) (Ω)

Fig.7 Static drain-source on-state resistance vs. channel temperature

0.00010.0010.010.020.5

FORWARD TRANSFER

ADMITTANCE : |Yfs| (S)

DRAIN CURRENT : ID (A)0.005

0.00020.00050.0010.0020.0050.010.020.050.050.10.2

0.10.20.5

0.002Ta=−25°C25°C75°C125°CVDS=3VPulsed

Fig.8 Forward transfer admittance vs. drain current 200m

REVERSE DRAIN CURRENT : IDR (A)

SOURCE-DRAIN VOLTAGE : VSD (V)1.510.50100m50m

20m10m5m

2m1m0.5m

0.2m0.1mVGS=0VPulsed

Ta=125°C75°C25°C−25°C

Fig.9 Reverse drain current vs.source-drain voltage (Ι)

200m

REVERSE DRAIN CURRENT : IDR (A)

SOURCE-DRAIN VOLTAGE : VSD (V)1.510.50100m50m

20m10m5m

2m1m0.5m

0.2m0.1mTa=25°CPulsed

VGS=4V0V

Fig.10 Reverse drain current vs.source-drain voltage (ΙΙ)

0.11250

CAPACITANCE : C (pF)

DRAIN-SOURCE VOLTAGE : VDS (V)0.50.20.512510205051020Ciss

Coss

CrssTa=25°Cf=1MHZVGS=0V

Fig.11 Typical capacitance vs. drain-source voltage

0.11020500

SWITHING TIME : t (ns)

DRAIN CURRENT : ID (mA)5

0.20.5125102050501002001000

2100Ta=25°CVDD=5VVGS=5VRG=10ΩPulsedtd(off)

trtd(on)tf

Fig.12 Switching characteristics (See Figures 13 and 14 forthe measurement circuitand resultant waveforms)

zSwitching characteristics measurement circuit

Fig.13 Switching time measurement circuitVGS

RGVDSD.U.T.IDRL

VDD

90%50%

10%

90%10%50%Pulse width

10%VGS

VDS

90%tftofftd (off)trtontd (on)

Fig.14 Switching time waveforms

元器件交易网www.cecb2b.com

合集下载

L-3541SRD中文资料

L-3541SRD中文资料

L-3541XX 3.0mm Dia LOW FROFILE LED LAMP

Chip Electro-Optical Characteristics Vf(V)20mA Iv(mcd)10mAPart No. Raw Material Emitted Color Lens Color WaveLengthλp(nm)Typ.Max. Typ. View Angle (deg)

L-3541HD GaP Red Red Diffused 700 2.1 2.8 6.0 60

L-3541GD GaP Green Green Diffused565 2.1 2.8 12.5 60

L-3541YD GaAsP/GaPYellow Yellow Diffused585 2.1 2.8 12.5 60

L-3541ED GaAsP/GaPHi.effi Red Red Diffused 635 2.0 2.8 20.0 60

L-3541SRD GaAlAs Super Red Red Diffused 660 1.8 2.4 100.0 60

L-3N4XX 3.0mm Dia CYLINDRICAL LED LAMP

Chip Electro-Optical Characteristics Vf(V)20mA Iv(mcd)10mAPart No. Raw Material Emitted Color Lens Color WaveLengthλp(nm)Typ.Max. Typ. View Angle (deg)

L-3N4HD GaP Red Red Diffused 700 2.1 2.8 6.0 60

L-3N4GD GaP Green Green Diffused565 2.1 2.8 12.5 60

L-3N4YD GaAsP/GaPYellow Yellow Diffused585 2.1 2.8 12.5 60

2SK3813-Z资料

2SK3813-Z资料

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR

2SK3813

SWITCHING

N-CHANNEL POWER MOS FET DATA SHEET

Document No. D16739EJ2V0DS00 (2nd edition)

Date Published September 2004 NS CP(K)

Printed in Japan

2004The markshows major revised points.

DESCRIPTION

The 2SK3813 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Super low on-state resistance

R

DS(on)1 = 5.3 mΩ MAX. (V

GS = 10

V, I

D = 30

A)

R

DS(on)2 = 7.1 mΩ MAX. (V

GS = 4.5

V, I

D = 30

A)

• Low C

iss: C

iss = 5500 pF TYP.

2SC4541 PDF规格书

2SC4541 PDF规格书

2SC4541

■ Features

● Low saturation voltage

● High speed switching time

● Small flat package

● PC = 1.0 to 2.0 W (mounted on ceramic substrate)

● Complementary to 2SA1736

1.Base2.Collector3.Emitter1.700.1

0.420.10.460.1

■ Absolute Maximum Ratings Ta = 25℃

ParameterSymbolRatingUnit

Collector - Base VoltageVCBO80

Collector - Emitter VoltageVCEO50

Emitter - Base VoltageVEBO6

Collector Current - ContinuousIC3

Base CurrentIB0.6

Collector Power Dissipation 500

(Note.1)1000

Junction TemperatureTJ150

Storage Temperature RangeTstg -55 to 150V

℃A

PCmW

Note.1: Mounted on ceramic substrate (250 mm × 0.8 t)2■ Electrical Characteristics Ta = 25℃

ParameterSymbolTest ConditionsMinTypMaxUnit

Collector- base breakdown voltageVCBO Ic= 100 uA， IE= 080

Collector- emitter breakdown voltageVCEO Ic= 10 mA，IB= 050

Emitter - base breakdown voltageVEBO IE= 100μA， IC= 06

2SK3635-Z资料

2SK3635-Z资料

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR

2SK3635

SWITCHING

N-CHANNEL POWER MOS FET DATA SHEET

Document No. D15932EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan 2001The markshows major revised points. DESCRIPTION The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low Ciss: Ciss = 390 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package • Avalanche capability rated ABSOLUTE MAXIMUM RATINGS (TA = 25°C)