RSR020P03TL中文资料

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Transistors
Rev.A 1/4
4V Drive Pch MOSFET
RSR020P03
z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET
z Features
1) Low On-resistance 2) Space saving −small surface mount package (TSMT3) 3) 4V drive
z
Switching
z Packaging specifications
z Inner circuit
z Absolute maximum ratings (T a=25°C)
∗1∗2∗1Parameter
V V DSS Symbol V V GSS A I D
A I DP A I S
A I SP W P D °C Tch °C
Tstg Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature
Range of storage temperature
Continuous Pulsed Continuous Pulsed
∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic board
Source current (Body diode)
−30±2±8±20−0.8−81150−55 to +150
z Thermal resistance
Parameter
°C/W
Rth(ch-a)Symbol Limits Unit Channel to ambient
125
∗ Mounted on a ceramic board

Transistors
Rev.A 2/4
z Electrical characteristics (T a=25°C)
z Body diode characteristics (Source-drain) (T a=25°C)
V SD −−
Forward voltage
Parameter
Symbol Min.Typ.∗Pulsed
∗−1.2V
I S = −0.8A, V GS =0V
Max.Unit Conditions
Transistors
Rev.A 3/4
GATE-SOURCE VOLTAGE : −V GS (V)
D R A I N C U R R
E N T : −I D (A )
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : −V GS (V)
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S
T A N C E : −R D S (o n ) (m Ω)
Fig.5 Static Drain-Source
On-State Resistance vs. Gate-Source Voltage
SOURCE-DRAIN VOLTAGE : −V SD (V)
R E V E R S E D R A I N C U R R E N T : −I D R (A )
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
z
Electrical characteristics curves
DRAIN-SOURCE VOLTAGE : −V DS (V)
10100
1000
C A P A C I T A N C E : C (p F )
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : −I D (A)S W I T
C H I N G T I M E : t (n s )
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
G A T E -S O U R C E V O L T A G E : −V G S (V )
Fig.3 Dynamic Input Characteristics
DRAIN CURRENT : −I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : −R D S (o n ) (m Ω)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι )DRAIN CURRENT :
−I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : −R D S (o n ) (m Ω)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙ )
DRAIN CURRENT : −
I D (A)
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : −R D S (o n ) (m Ω)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙΙ )
Transistors
Rev.A 4/4
DRAIN CURRENT : −I D (A)
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : −R D S (o n ) (m Ω)
Fig.10 Static Drain-Source On-State Resistance vs.
Drain current ( Ι )
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1。