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F1022资料

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RF CHARACTERISTICS ( WATTS OUTPUT )

80General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PATENTED GOLD METALIZED

80WattsGemini

Package StyleAK

HIGH EFFICIENCY, LINEAR, ABSOLUTE MAXIMUM RATINGS (TC = 25 C)o

TotalDeviceJunction to Case ThermalMaximumJunctionStorageTemperatureDC DrainCurrentDrain toGateDrain toSourceGate toSource

290Watts0.6Co200-65to15012A30VVV7070

ELECTRICAL CHARACTERISTICS (EACH SIDE)SYMBOLPARAMETERMINTYPMAXUNITSTEST CONDITIONS

SYMBOLPARAMETERMINTYPMAXUNITSTEST CONDITIONSGpsη

VSWRCommon Source Power Gai

Drain Efficiency

Load Mismatch TolerancdB

%

Relative10

601.2

20:1Idq =

Idq =

Idq = 1.2

1.2A,

A,

A,28.0Vds =V,

28.0Vds =V,

28.0Vds =V,F =400MHz

F =400MHz

F =400MHz

Bvdss

Idss

Igss

Vgs

gM

Rdson

Idsat

Ciss

Crss

CossDrain Breakdown Voltag

Zero Bias Drain Curren

Gate Leakage Curren

Gate Bias for Drain Curren

Forward Transconductanc

Saturation Resistanc

Saturation Curren

Common Source Input Capacitanc

Common Source Feedback Capacitanc

Common Source Output Capacitanc65

3

1

71

2.4

0.5

16.5

99

12

60Mho

Ohm

Amp

pFV

V

pF

pFmA

uA0.15Ids = A,Vgs = 0V28.0Vds =V,Vgs = 0V

Vds = 0 V,Vgs = 30V

0.3Ids =A,Vgs = Vds

Vds = 10V,Vgs = 5V

Vgs = 20V,Ids =12

Vgs = 20V,Vds = 10V

28.0Vds =V, Vgs = 0V, F = 1 MHzA

28.0Vds =V, Vgs = 0V, F = 1 MHz

28.0Vds =V, Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.comREVISIONSILICON GATE ENHANCEMENT MODE RF POWER

HIGH GAIN, LOW NOISE "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performancetTM

CoCoC/WoF1022polyfet rf devices

DissipationResistanceTemperatureVoltageVoltageVoltage

8/1/97VDMOSTRANSISTOR 元器件交易网www.cecb2b.comF1022 POUT vs PIN FREQ 400 Mhz; Idq=1.2A Vds = 28vPin in Watts

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.comCAPACITANCE VS VOLTAGE

IV CURVEID AND GM VS VGS

S11 AND S22 SMITH CHARTPACKAGE DIMENSIONS IN INCHES

REVISION8/1/97元器件交易网www.cecb2b.com

合集下载

BH1417F中文资料

BH1417F中文资料

BH1417F Multimedia ICs 1/2 Wireless Audio Link IC

BH1417F

The BH1417F is a FM stereo transmitter IC that transmits simple configuration. The IC consists of a stereo modulator for generating stereo composite signals and a FM transmitter for broadcasting a FM signal on the air. The stereo modulator generates a composite signal which consists of the MAIN, SUB, and pilot signal from a 38kHz oscillator. The FM transmitter radiates FM wave on the air by modulating the carrier signal with a composite signal. Frequency is set for North America. !Applications Wireless speakers, Personal computer(sound board), Game machine, CD changer, Car TV, Car navigation !Features 1) It is possible to improve the timbre because it has the pre-emphasis circuit, limiter circuit, and the low-pass filter circuit. 2) Built-in pilot-tone system FM stereo modulator circuit. 3) The transmission frequency is stable because it has a PLL system FM transmitter circuit. 4) PLL controls data input in parallel (4bits, 14ch for North America). !Absolute maximum ratings (Ta = 25°C, In measurement circuit.)

STM32F205&STM32F207中文资料

STM32F205&STM32F207中文资料

2012

ＳＴ代理－深圳恒信宇电子

电子元器件规格书－－ｈｔｔｐ：／／ｔｉｅｂａ．ｂａｉｄｕ．ｃｏｍ／ｐ／１８５００２８８３６

ｈｔｔｐ：／／ｗｅｎｋｕ．ｂａｉｄｕ．ｃｏｍ／ｖｉｅｗ／４４ｂ３ｄ４ｄ２５０ｅ２５２４ｄｅ５１８７ｅｂ０．ｈｔｍｌ请

给

文

档

评

分

谢

谢

！主要特点与中文描述ＳＴＭ３２Ｆ２０５

ＳＴＭ３２Ｆ２０７

描 述

该ｓｔｍ３２ｆ２０ｘ是基于高性能的３２位精简指令集的核心运行频率高达１２０兆赫。该系列采用高速嵌

入式存储器（快闪记忆体可达１字节，多达１２８个字节的系统存储器），多达４个字节的备份存储器，

和一个范围广泛的增强我／操作系统和外设连接到建业巴士，三巴士和一个３２　－　ｍｕｌｔｉ－ａｈｂ总线矩

阵。

该设备还具有一个自适应的实时内存加速器（艺术加速器？），允许实现一个性能相当于０个等

待状态的程序执行从快闪记忆体在频率高达１２０兆赫。这一业绩已被证实使用ｃｏｒｅｍａｒｋ基准。

所有设备提供三的１２位模数转换器，数模转换器，低功耗的时钟，十二个通用的１６位定时器包

括脉宽调制定时器的电机控制，２通用３２位定时器。一个真正的数字随机发生器（测距）。它们还具

有标准和先进的通信接口。新的先进的设备包括一个输出，增强柔性静态存储器控制（设计）接口

（设备提供软件包１００引脚和更多），和一个摄像头界面传感器。该装置还采用标准外设。

2012

相关型号：ＳＴＭ３２Ｆ０５１，ＳＴＭ３２Ｆ２系列，ＳＴＭ３２Ｆ４系列，ＳＴＭ３２Ｆ１００，ＳＴＭ３２Ｆ１０１，ＳＴＭ３２Ｆ１０２，ＳＴＭ３２Ｆ１０３，

ＳＴＭ３２Ｆ１０５，ＳＴＭ３２Ｆ１０７，ＳＴＭ３２Ｌ１５１，ＳＴＭ３２Ｌ１５２，ＳＴＭ３２Ｆ０５０　ＳＴ代理－深圳恒信宇电子

电子元器件规格书－－ｈｔｔｐ：／／ｔｉｅｂａ．ｂａｉｄｕ．ｃｏｍ／ｐ／１８５００２８８３６

ｈｔｔｐ：／／ｗｅｎｋｕ．ｂａｉｄｕ．ｃｏｍ／ｖｉｅｗ／４４ｂ３ｄ４ｄ２５０ｅ２５２４ｄｅ５１８７ｅｂ０．ｈｔｍｌ请

PG12864-F中文资料

PG12864-F中文资料

The tolerance unless classified 0.3mmLCD option: STN, TN, FSTNBacklight Option: LED,EL Backlight feature, other Specs not available on catalog is under request.OUTLINE DIMENSION & BLOCK DIAGRAMPG 12864-F

MECHANICAL SPECIFICATIONOverall SizeView AreaDot SizeDot Pitch78.0 x 70.062.0 x 44.00.39 x 0.550.44 x 0.60ModuleW /O B/LEL B/LLED B/LH2 / H15.1 / 9.75.1 / 9.79.2 / 13.8 Vdd+0.3VVV 22.0 7.0ItemSupply for logic voltageLCD driving supply voltageInput voltageVdd-VssVdd-VeeVin25oC25oC25oC-0.30-0.3SymbolConditionMin.Max.UnitsABSOLUTE MAXIMUM RATINGItemLCD operation voltageLCM current consumption (No B/L)Backlight current consumptionSymbol Min.ConditionVopIddLED/edge VB/L=4.2VLED/arrayTop-20oC0oC25oC50oC70oCVB/L=4.2VNW8.68.58Vdd=5V7.688.6ELECTRICAL CHARACTERISTICS TypicalNWMax.UnitsV9.38.88.49.59.57.8VVVVVmAmAmA6.5NW98.98.488.4935025oCPower supply voltage Vdd-Vss V4.55.5PIN ASSIGNMENTPin no.SymbolFunction12345678910-1718VssVddVoRDWRFGDB0-DB7CECDRST FSPower supply(GND)Power supply(+)Contrast AdjustData readData writeFrame groundData bus lineChip enableCommand / data selectResetFont selectDB0~DB7CERDVddVoAKCDRSTFSVssWRFG8T6963CCOM4K RAM3BACKLIGHT4464COL64COLLCD PANEL640.550.050.390.0535.0H1H21.64- 2.51.8AK128 x 64 Dots18178.0 0.568.0P2.54 x 17=43.1818- 1.01.856.2762.076.039.05.013.058.044.038.354- 1.014.05.064.9270.0 0.52.542.54元器件交易网

HF32F-G资料

HF32F-G资料

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